StrongIRFET™ IRF135B203 IRF135S203 HEXFET® Power MOSFET Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications Resonant mode power supplies OR-ing and redundant power switches DC/DC and AC/DC converters DC/AC Inverters VDSS 135V RDS(on) typ. 6.7m max 8.4m D G S ID (Silicon Limited) 129A D Benefits Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dV/dt and dI/dt Capability Lead-Free, RoHS Compliant, Halogen-Free S D G TO-220AB IRF135B203 G Gate Package Type IRF135B201 IRF135S201 TO-220 D2-Pak 28 S Source Orderable Part Number IRF135B203 IRF135S203 140 ID = 77A 26 120 24 22 20 18 16 T J = 125°C 14 12 10 T J = 25°C 8 100 80 60 40 20 6 4 0 2 4 6 8 10 12 14 16 18 20 VGS, Gate -to -Source Voltage (V) Fig 1. Typical On– Resistance vs. Gate Voltage 1 D2-Pak IRF135S203 D Drain Standard Pack Form Quantity Tube 50 Tape and Reel 800 ID, Drain Current (A) RDS(on), Drain-to -Source On Resistance (m ) Base part number S G www.irf.com © 2015 International Rectifier 25 50 75 100 125 150 175 T C , Case Temperature (°C) Fig 2. Maximum Drain Current vs. Case Temperature Submit Datasheet Feedback June 17, 2015 IRF135B203/IRF135S203 Absolute Maximum Rating Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting Torque, 6-32 or M3 Screw Max. 129 91 512 441 2.9 ± 20 A W W/°C V -55 to + 175 300 10 lbf·in (1.1 N·m) Avalanche Characteristics EAS (Thermally limited) Single Pulse Avalanche Energy EAS (Thermally limited) IAR EAR Units °C 595 mJ 870 Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy A mJ See Fig 15, 15, 23a, 23b Thermal Resistance Symbol Parameter Junction-to-Case RJC Case-to-Sink, Flat Greased Surface RCS Junction-to-Ambient RJA Junction-to-Ambient (PCB Mount) RJA Typ. ––– 0.50 ––– ––– Max. 0.34 ––– 62 40 Units °C/W Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter V(BR)DSS Drain-to-Source Breakdown Voltage Min. 135 Typ. Max. ––– ––– Units Conditions V VGS = 0V, ID = 250µA V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.14 ––– V/°C RDS(on) VGS(th) Static Drain-to-Source On-Resistance Gate Threshold Voltage IDSS Drain-to-Source Leakage Current ––– 2.0 ––– ––– ––– ––– ––– 6.7 ––– ––– ––– ––– ––– 2.1 8.4 4.0 20 250 100 -100 ––– m VGS = 10V, ID = 77A V VDS = VGS, ID = 250µA VDS =135 V, VGS = 0V µA VDS = 108V,VGS = 0V,TJ =125°C VGS = 20V nA VGS = -20V Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Gate Resistance IGSS RG Reference to 25°C, ID = 5mA Notes: Repetitive rating; pulse width limited by max. junction temperature. Limited by TJmax, starting TJ = 25°C, L = 200µH, RG = 50, IAS = 77A, VGS =10V. ISD 77A, di/dt 1700A/µs, VDD V(BR)DSS, TJ 175°C. Pulse width 400µs; duty cycle 2%. Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. R is measured at TJ approximately 90°C. When mounted on 1 inch square PCB (FR-4). Please refer to AN-994 for more details: http://www.irf.com/technical-info/appnotes/an-994.pdf Limited by TJmax, starting TJ = 25°C, L = 1.0mH, RG = 50, IAS = 41A, VGS =10V. 2 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback June 17, 2015 IRF135B203/IRF135S203 Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Symbol gfs Qg Qgs Qgd Qsync td(on) tr Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Total Gate Charge Sync. (Qg– Qgd) Turn-On Delay Time Rise Time Min. 200 ––– ––– ––– ––– ––– ––– Typ. ––– 180 43 46 134 18 73 td(off) Turn-Off Delay Time ––– 114 tf Ciss Coss Crss Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Effective Output Capacitance (Energy Related) Output Capacitance (Time Related) ––– ––– ––– ––– 81 9700 540 250 ––– 520 ––– VGS = 0V, VDS = 0V to 108V ––– 700 ––– VGS = 0V, VDS = 0V to 108V Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Min. Typ. Max. Units ––– ––– 129 ––– ––– 512 Conditions MOSFET symbol showing the integral reverse p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 dv/dt Peak Diode Recovery dv/dt trr Reverse Recovery Time Qrr Reverse Recovery Charge ––– ––– ––– ––– ––– 4.0 80 93 270 360 ––– ––– ––– ––– ––– IRRM Reverse Recovery Current ––– 6.0 ––– Coss eff.(ER) Coss eff.(TR) Max. Units Conditions ––– S VDS = 10V, ID = 77A 270 ID = 77A ––– VDS = 68V nC ––– VGS = 10V ––– ––– VDD = 81V ID = 77A ––– ns ––– RG= 2.7 VGS = 10V ––– ––– ––– ––– pF VGS = 0V VDS = 50V ƒ = 1.0MHz, See Fig.7 Diode Characteristics Symbol IS ISM 3 www.irf.com © 2015 International Rectifier A V D G S TJ = 25°C,IS = 77A,VGS = 0V V/ns TJ = 175°C,IS =77A,VDS = 135V TJ = 25°C VDD = 115V ns TJ = 125°C IF = 77A, TJ = 25°C di/dt = 100A/µs nC TJ = 125°C A TJ = 25°C Submit Datasheet Feedback June 17, 2015 IRF135B203/IRF135S203 1000 1000 100 BOTTOM TOP 10 ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 15V 10V 7.0V 6.0V 5.5V 5.0V 4.5V 4.0V 4.0V 100 BOTTOM VGS 15V 10V 7.0V 6.0V 5.5V 5.0V 4.5V 4.0V 10 60µs PULSE WIDTH 60µs PULSE WIDTH Tj = 175°C Tj = 25°C 1 0.1 1 1 10 0.1 100 1000 100 3.5 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) 10 Fig 4. Typical Output Characteristics Fig 3. Typical Output Characteristics 100 T J = 175°C T J = 25°C 10 1 VDS = 50V 60µs PULSE WIDTH 0.1 ID = 77A VGS = 10V 3.0 2.5 2.0 1.5 1.0 0.5 1 2 3 4 5 6 7 8 -60 60 100 140 180 14 VGS = 0V, f = 1 MHZ Ciss = C gs + Cgd, C ds SHORTED ID = 77A VGS, Gate-to-Source Voltage (V) Crss = C gd Coss = Cds + Cgd Ciss 10000 20 Fig 6. Normalized On-Resistance vs. Temperature Fig 5. Typical Transfer Characteristics 100000 -20 T J , Junction Temperature (°C) VGS, Gate-to-Source Voltage (V) C, Capacitance (pF) 1 V DS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V) Coss 1000 Crss 100 12 VDS= 108V VDS= 68V VDS= 27V 10 8 6 4 2 0 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 7. Typical Capacitance vs. Drain-to-Source Voltage 4 4.0V www.irf.com © 2015 International Rectifier 0 40 80 120 160 200 240 QG, Total Gate Charge (nC) Fig 8. Typical Gate Charge vs.Gate-to-Source Voltage Submit Datasheet Feedback June 17, 2015 IRF135B203/IRF135S203 1000 T J = 175°C 100 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 1000 T J = 25°C 10 1 VGS = 0V 0.5 1.0 OPERATION IN THIS AREA LIMITED BY RDS(on) 10 1 10msec DC 0.1 Tc = 25°C Tj = 175°C Single Pulse 0.01 0.1 0.0 100µsec 1msec 100 1.5 0.1 2.0 1 100 Fig 10. Maximum Safe Operating Area Fig 9. Typical Source-Drain Diode Forward Voltage 4.0 170 Id = 5.0mA 3.5 3.0 160 Energy (µJ) V(BR)DSS , Drain-to-Source Breakdown Voltage (V) 10 VDS, Drain-to-Source Voltage (V) VSD, Source-to-Drain Voltage (V) 150 2.5 2.0 1.5 1.0 140 0.5 0.0 130 0 -60 -40 -20 0 20 40 60 80 100120140160180 20 T J , Temperature ( °C ) 40 60 80 100 120 140 VDS, Drain-to-Source Voltage (V) RDS(on), Drain-to -Source On Resistance ( m ) Fig 11. Drain-to-Source Breakdown Voltage Fig 12. Typical Coss Stored Energy 20 18 VGS = 4.5V VGS = 5.5V VGS = 6.0V VGS = 8.0V VGS = 10V 16 14 12 10 8 6 4 0 40 80 120 160 200 ID, Drain Current (A) Fig 13. Typical On–Resistance vs. Drain Current 5 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback June 17, 2015 IRF135B203/IRF135S203 Thermal Response ( Z thJC ) °C/W 1 D = 0.50 0.1 0.20 0.10 0.05 0.01 0.02 0.01 0.001 SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 1E-006 1E-005 0.0001 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case 1000 Avalanche Current (A) Duty Cycle = Single Pulse Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 150°C and Tstart =25°C (Single Pulse) 100 0.01 0.05 10 0.10 1 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25°C and Tstart = 150°C. 0.1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Avalanche Current vs. Pulse Width EAR , Avalanche Energy (mJ) 600 TOP Single Pulse BOTTOM 1.0% Duty Cycle ID = 77A 500 400 300 200 100 0 25 50 75 100 125 150 175 Starting T J , Junction Temperature (°C) Fig 16. Maximum Avalanche Energy vs. Temperature 6 www.irf.com © 2015 International Rectifier Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1.Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 23a, 23b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 14, 15). tav = Average time in avalanche. D = Duty cycle in avalanche = tav ·f ZthJC(D, tav) = Transient thermal resistance, see Figures 14) PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC Iav = 2T/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav Submit Datasheet Feedback June 17, 2015 IRF135B203/IRF135S203 40 3.5 3.0 IRRM (A) VGS(th) , Gate threshold Voltage (V) 4.0 2.5 2.0 1.5 1.0 ID = 250µA ID = 1.0mA ID = 10mA ID = 1.0A 35 IF = 54A V R = 115V 30 TJ = 25°C TJ = 125°C 25 20 15 10 5 0 0.5 -75 -50 -25 0 100 200 300 400 500 600 700 800 900 1000 25 50 75 100 125 150 175 diF /dt (A/µs) T J , Temperature ( °C ) Fig 18. Typical Recovery Current vs. dif/dt Fig 17. Threshold Voltage vs. Temperature 1600 40 IRRM (A) 30 25 TJ = 25°C TJ = 125°C QRR (nC) 35 IF = 77A V R = 115V 20 15 1400 IF = 54A V R = 115V 1200 TJ = 25°C TJ = 125°C 1000 800 600 10 400 5 200 0 0 100 200 300 400 500 600 700 800 900 1000 100 200 300 400 500 600 700 800 900 1000 diF /dt (A/µs) diF /dt (A/µs) Fig 20. Typical Stored Charge vs. dif/dt Fig 19. Typical Recovery Current vs. dif/dt QRR (nC) 1600 1400 IF = 77A V R = 115V 1200 TJ = 25°C TJ = 125°C 1000 800 600 400 200 0 100 200 300 400 500 600 700 800 900 1000 diF /dt (A/µs) Fig 21. Typical Stored Charge vs. dif/dt 7 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback June 17, 2015 IRF135B203/IRF135S203 Fig 22. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs V(BR)DSS tp 15V DRIVER L VDS D.U.T RG + V - DD IAS 20V tp A I AS 0.01 Fig 23a. Unclamped Inductive Test Circuit Fig 23b. Unclamped Inductive Waveforms Fig 24a. Switching Time Test Circuit Fig 24b. Switching Time Waveforms Id Vds Vgs VDD Vgs(th) Qgs1 Qgs2 Fig 25a. Gate Charge Test Circuit 8 www.irf.com © 2015 International Rectifier Qgd Qgodr Fig 25b. Gate Charge Waveform Submit Datasheet Feedback June 17, 2015 IRF135B203/IRF135S203 TO-220AB Package Outline (Dimensions are shown in millimeters (inches)) TO-220AB Part Marking Information EXAM PLE: T H IS IS A N IR F 1 0 1 0 LO T C O D E 1789 ASSEM BLED O N W W 19, 2000 IN T H E A S S E M B L Y L IN E "C " N o t e : "P " in a s s e m b ly lin e p o s it io n in d ic a t e s "L e a d - F r e e " IN T E R N A T IO N A L R E C T IF IE R LO G O ASSEM BLY LO T C O D E PART NUM BER D ATE C O D E YEA R 0 = 2000 W EEK 19 L IN E C TO-220AB packages are not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 9 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback June 17, 2015 IRF135B203/IRF135S203 D2Pak (TO-263AB) Package Outline (Dimensions are shown in millimeters (inches)) D2Pak (TO-263AB) Part Marking Information THIS IS AN IRF530S WITH LOT CODE 8024 ASSEMBLED ON WW 02, 2000 IN THE ASSEMBLY LINE "L" INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE PART NUMBER F530S DATE CODE YEAR 0 = 2000 WEEK 02 LINE L OR INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE PART NUMBER F530S DATE CODE P = DESIGNATES LEAD - FREE PRODUCT (OPTIONAL) YEAR 0 = 2000 WEEK 02 A = ASSEMBLY SITE CODE Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback June 17, 2015 IRF135B203/IRF135S203 D2Pak (TO-263AB) Tape & Reel Information (Dimensions are shown in millimeters (inches)) TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) FEED DIRECTION 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 11.60 (.457) 11.40 (.449) 0.368 (.0145) 0.342 (.0135) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 4.72 (.136) 4.52 (.178) 16.10 (.634) 15.90 (.626) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 60.00 (2.362) MIN. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 11 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback June 17, 2015 IRF135B203/IRF135S203 Qualification Information† Industrial (per JEDEC JESD47F) †† Qualification Level Moisture Sensitivity Level TO-220 D Pak MSL1 Yes RoHS Compliant † N/A 2 Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/ IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 12 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback June 17, 2015