Datasheet - International Rectifier

PD-96073A
IRF7353D2UPbF
FETKYä MOSFET / Schottky Diode
l Co-Pack HEXFET® Power MOSFET
and Schottky Diode
l Ideal For Buck Regulator Applications
l N-Channel HEXFET power MOSFET
l Low VF Schottky Rectifier
l Generation 5 Technology
l SO-8 Footprint
l Lead-Free
1
8
K
A
2
7
K
S
3
6
D
G
4
5
D
A
VDSS = 30V
RDS(on) = 0.029Ω
Schottky VF = 0.52V
Top View
Description
The FETKY™ family of Co-Pack HEXFET® Power MOSFETs and Schottky
diodes offers the designer an innovative, board space saving solution for
switching regulator and power management applications. Generation 5 HEXFET
power MOSFETs utilize advanced processing techniques to achieve extremely
low on-resistance per silicon area. Combinining this technology with
International Rectifier's low forward drop Schottky rectifiers results in an
extremely efficient device suitable for use in a wide variety of portable electronics
applications.
SO-8
The SO-8 has been modified through a customized leadframe for enhanced
thermal characteristics. The SO-8 package is designed for vapor phase,
infrared or wave soldering techniques.
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Parameter
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
dv/dt
TJ, TSTG
Continuous Drain Current „
Pulsed Drain Current 
Power Dissipation „
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ‚
Junction and Storage Temperature Range
Maximum
Units
6.5
5.2
52
2.0
1.3
16
± 20
-5.0
-55 to +150
A
W
mW/°C
V
V/ns
°C
Thermal Resistance Ratings
Parameter
RθJA
Maximum
Units
62.5
°C/W
Junction-to-Ambient …
Notes:
 Repetitive rating; pulse width limited by maximum junction temperature (see figure 9)
‚ Starting TJ = 25°C, L = 10mH, RG = 25Ω, IAS = 4.0A
ƒ ISD ≤ 4.0A, di/dt ≤ 74A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
„ Pulse width ≤ 300µs; duty cycle ≤ 2%
… Surface mounted on FR-4 board, t ≤ 10sec.
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IRF7353D2UPbF
MOSFET Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS
RDS(on)
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
VGS(th)
gfs
IDSS
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Min.
30
—
—
1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ. Max. Units
Conditions
—
—
V
VGS = 0V, ID = 250µA
0.023 0.029
VGS = 10V, ID = 5.8A „
Ω
0.032 0.046
VGS = 4.5V, ID = 4.7A „
—
—
V
VDS = VGS, ID = 250µA
14
—
S
VDS = 24V, ID = 5.8A
—
1.0
VDS = 24V, VGS = 0V
µA
—
25
VDS = 24V, VGS = 0V, TJ = 55°C
— 100
VGS = 20V
nA
— -100
VGS = -20V
22
33
ID = 5.8A
2.6 3.9
nC
VDS = 24V
6.4 9.6
VGS = 10V (see figure 8) „
8.1
12
VDD = -5V
8.9
13
ID = 1.0A
ns
26
39
RG = 6.0Ω
18
26
RD = 15Ω „
650 —
VGS = 0V
320 —
pF
VDS = 25V
130 —
ƒ = 1.0MHz (see figure 7)
MOSFET Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current (Body Diode)
VSD
Body Diode Forward Voltage
trr
Reverse Recovery Time (Body Diode)
Q rr
Reverse Recovery Charge
Min.
—
—
—
—
—
Typ. Max. Units
—
2.5
A
—
30
0.78 1.0
V
45
68
ns
58
87
nC
Conditions
TJ = 25°C, IS = 1.7A, VGS = 0V
TJ = 25°C, IF = 1.7A
di/dt = 100A/µs ƒ
Schottky Diode Maximum Ratings
IF (av)
ISM
Parameter
Max. Average Forward Current
Max. peak one cycle Non-repetitive
Surge current
Max. Units
3.2
A
2.0
200
20
A
Conditions
50% Duty Cycle. Rectangular Wave, Tc = 25°C
50% Duty Cycle. Rectangular Wave, Tc = 70°C
5µs sine or 3µs Rect. pulse
Following any rated
10ms sine or 6ms Rect. pulse load condition &
with Vrrm applied
Schottky Diode Electrical Specifications
VFM
Parameter
Max. Forward voltage drop
Irm
Max. Reverse Leakage current
Ct
dv/dt
Max. Junction Capacitance
Max. Voltage Rate of Charge
( HEXFET is the reg. TM for International Rectifier Power MOSFET's )
2
Max. Units
0.57
0.77
V
0.52
0.79
0.30
mA
37
310 pF
4900 V/µs
Conditions
If = 3.0, Tj = 25°C
If = 6.0, Tj = 25°C
If = 3.0, Tj = 125°C
If = 6.0, Tj = 125°C
Vr= 30V
Tj = 25°C
Tj = 125°C
Vr = 5Vdc (100kHz to 1 MHz) 25°C
Rated Vr
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IRF7353D2UPbF
Power MOSFET Characteristics
100
100
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
TOP
I D, Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
TOP
10
3.0V
20µs PULSE WIDTH
TJ = 25°C
A
1
0.1
1
10
3.0V
20µs PULSE WIDTH
TJ = 150°C
A
1
0.1
10
2.0
TJ = 25°C
TJ = 150°C
10
VDS = 10V
20µs PULSE WIDTH
3.5
4.0
4.5
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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A
5.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
100
3.0
10
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
1
1
VDS, Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
ID = 5.8A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 10V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRF7353D2UPbF
0.040
V GS = 4.5V
0.036
0.032
0.028
0.024
V GS = 10V
0.020
0
10
20
30
40
A
RDS (on) , Drain-to-Source On Resistance (Ω)
RDS (on) , Drain-to-Source On Resistance (Ω)
Power MOSFET Characteristics
0.12
0.10
0.08
0.06
I D = 5.8A
0.04
0.02
0.00
0
3
I D , Drain Current (A)
VGS , Gate-to-Source Voltage (V)
C, Capacitance (pF)
20
Ciss
Coss
600
Crss
300
0
1
10
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Capacitance Vs.
Drain-to-Source Voltage
4
12
15
A
Fig 6. Typical On-Resistance Vs. Gate
Voltage
V GS = 0V,
f = 1MHz
C iss = Cgs + C gd , Cds SHORTED
C rss = C gd
C oss = C ds + C gd
900
9
V GS , Gate-to-Source Voltage (V)
Fig 5. Typical On-Resistance Vs. Drain
Current
1200
6
100
A
ID = 5.8A
VDS = 15V
16
12
8
4
0
0
10
20
30
40
QG , Total Gate Charge (nC)
Fig 8. Typical Gate Charge Vs.
Gate-to-Source Voltage
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IRF7353D2UPbF
Power MOSFET Characteristics
Thermal Response (Z thJA )
100
D = 0.50
0.20
10
0.10
0.05
0.02
1
PDM
0.01
t1
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.1
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
ISD , Reverse Drain Current (A)
100
TJ = 150°C
10
TJ = 25°C
VGS = 0V
1
0.4
0.6
0.8
1.0
1.2
1.4
A
1.6
V SD , Source-to-Drain Voltage (V)
Fig 10. Typical Source-Drain Diode
Forward Voltage
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IRF7353D2UPbF
Schottky Diode Characteristics
100
100
TJ = 150°C
Reverse Current - IR (mA)
10
TJ = 150°C
125°C
100°C
1
75°C
50°C
0.1
25°C
0.01
A
0.001
TJ = 125°C
0
5
10
15
20
25
30
Reverse Voltage - V R (V)
TJ = 25°C
Fig. 12 - Typical Values of
Reverse Current Vs. Reverse
Voltage
1
0.1
0.0
0.2
0.4
0.6
0.8
1.0
Forward Voltage Drop - VF (V)
Fig. 11 - Typical Forward Voltage Drop
Characteristics
Allowable Ambient Temperature - (°C)
Instantaneous Forward Current - IF (A)
10
160
V r = 80% Rated
R thJA = 62.5°C/W
Square wave
140
120
100
DC
80
60
40
20
D = 3/4
D = 1/2
D =1/3
D = 1/4
D = 1/5
A
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Average Forward Current - I F(AV) (A)
Fig.13 - Maximum Allowable Ambient
Temp. Vs. Forward Current
6
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IRF7353D2UPbF
SO-8 (Fetky) Package Outline
Dimensions are shown in millimeters (inches)
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SO-8 Part Marking Information
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IRF7353D2UPbF
SO-8 (Fetky) Tape and Reel
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 09/2006
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