PD- 91411C
IRF7421D1
PRELIMINARY
FETKY MOSFET / Schottky Diode
Co-packaged HEXFET® Power
MOSFET and Schottky Diode
Ideal For Synchronous Regulator
Applications
Generation V Technology
SO-8 Footprint
l
l
l
l
A
A
D
A
1
8
S
2
7
D
S
3
6
D
G
4
5
D
VDSS = 30V
RDS(on) = 0.035Ω
Schottky Vf = 0.39V
T o p V ie w
Description
The FETKYTM family of co-packaged HEXFETs and Schottky diodes offer
the designer an innovative board space saving solution for switching
regulator applications. Generation 5 HEXFETs utilize advanced processing
techniques to achieve extremely low on-resistance per silicon area. Combining
this technology with International Rectifier's low forward drop Schottky
rectifiers results in an extremely efficient device suitable for use in a wide
variety of portable electronics applications.
The SO-8 has been modified through a customized leadframe for enhanced
thermal characteristics. The SO-8 package is designed for vapor phase,
infrared or wave soldering techniques.
S O -8
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Parameter
ID @ TA = 25°C
ID @ TA = 70°C
I DM
PD @TA = 25°C
PD @TA = 70°C
Continuous Drain Current, VGS@10V➃
Pulsed Drain Current ➀
Power Dissipation ➃
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ➁
Junction and Storage Temperature Range
VGS
dv/dt
TJ, TSTG
Maximum
Units
5.8
4.6
46
2.0
1.3
16
± 20
-5.0
-55 to +150
A
W
W/°C
V
V/ns
°C
Thermal Resistance Ratings
Parameter
Maximum
Units
62.5
°C/W
Junction-to-Ambient ➃
RθJA
Notes:
➀ Repetitive rating; pulse width limited by maximum junction temperature (see figure 11)
➁ ISD ≤ 4.1A, di/dt ≤ 110A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
➂ Pulse width ≤ 300µs; duty cycle ≤ 2%
➃ Surface mounted on FR-4 board, t ≤ 10sec.
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MOSFET Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS
RDS(on)
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
VGS(th)
gfs
IDSS
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Min.
30
—
—
1.0
4.6
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
0.026
0.040
—
—
—
—
—
—
18
2.2
5.9
6.7
27
20
16
510
200
84
Max. Units
Conditions
—
V
VGS = 0V, ID = 250µA
0.035
VGS = 10V, ID = 4.1A
Ω
0.060
VGS = 4.5V, ID = 2.1A
—
V
VDS = VGS, ID = 250µA
—
S
VDS = 15V, ID = 2.1A
1.0
VDS = 24V, VGS = 0V
µA
25
VDS = 24V, VGS = 0V, TJ = 125°C
-100
VGS = -20V
nA
100
VGS = 20V
27
ID = 4.1A
3.3
nC VDS = 24V
8.9
VGS = 10V (see figure 10) ➂
—
VDD = 15V
—
ID = 4.1A
ns
—
RG = 6.2Ω
—
RD = 3.7Ω ➂
—
VGS = 0V
—
pF
VDS = 25V
—
ƒ = 1.0MHz (see figure 9)
MOSFET Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current (Body Diode) —
—
3.1
A
I SM
Pulsed Source Current (Body Diode)
—
—
33
VSD
Body Diode Forward Voltage
—
—
1.0
V
trr
Reverse Recovery Time (Body Diode) — 57
86
ns
Q rr
Reverse Recovery Charge
— 93
140
nC
Conditions
TJ = 25°C, IS = 4.1A, VGS = 0V
TJ = 25°C, IF = 4.1A
di/dt = 100A/µs ➂
Schottky Diode Maximum Ratings
IF(av)
I SM
Parameter
Max. Average Forward Current
Max. peak one cycle Non-repetitive
Surge current
Max. Units.
1.7
A
1.2
120
11
A
Conditions
50% Duty Cycle. Rectangular Wave, TA = 25°C
TA = 70°C
5µs sine or 3µs Rect. pulse
Following any rated
10ms sine or 6ms Rect. pulse load condition &
with VRRM applied
Schottky Diode Electrical Specifications
V FM
Parameter
Max. Forward voltage drop
IRM
Max. Reverse Leakage current
Ct
dv/dt
Max. Junction Capacitance
Max. Voltage Rate of Charge
Max. Units
0.50
0.62
V
0.39
0.57
0.06
mA
16
110 pF
3600 V/ µs
Conditions
IF = 1.0A, TJ = 25°C
IF = 2.0A, TJ = 25°C
IF = 1.0A, TJ = 125°C
IF = 2.0A, TJ = 125°C .
VR = 30V TJ = 25°C
TJ = 125°C
VR = 5Vdc ( 100kHz to 1 MHz) 25°C
Rated VR
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IRF7421D1
Power Mosfet Characteristics
100
100
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOT TOM 3.0V
TOP
I D, D rain-to-S ource C urrent (A )
I D , D rain-to-S ource C urrent (A )
TOP
10
3 .0V
1
0.1
20µ s P U LS E W ID TH
TJ = 25°C
A
1
10
3.0V
2 0µ s P U LS E W ID TH
TJ = 1 50°C
A
1
10
0.1
V D S , D rain-to-S ource V oltage (V )
100
I S D , R everse D rain C urrent (A )
100
TJ = 1 5 0 °C
TJ = 2 5 °C
10
V DS = 1 0V
2 0 µ s P U L S E W ID T H
1
3.0
3.5
4.0
4.5
5.0
5.5
V G S , G a te -to -S o u rc e V o lta g e (V )
Fig 3. Typical Transfer Characteristics
6.0
A
10
TJ = 150°C
TJ = 25°C
V G S = 0V
1
0.4
0.8
1.2
1.6
2.0
Fig 4. Typical Source-Drain Diode
Forward Voltage
3
3
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A
2.4
V S D , S ource-to-D rain V oltage (V )
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Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
I D , D ra in -to-S o urc e C urren t (A )
1
V D S , D rain-to-S ourc e V o ltage (V )
IRF7421D1
R D S (on ) , D rain-to-S ource O n R esistance
(N orm alized)
2.0
I D = 4.1A
1.5
1.0
0.5
V G S = 10V
0.0
-60
-40
-20
0
20
40
60
80
100 120
A
RDS (on) , Drain-to-Source On Resistance (Ω)
Power Mosfet Characteristics
0.2
VGS = 4.5V
0.1
VGS =10V
0.0
140 160
A
0
5
T J , Junction T em perature (°C )
I
Fig 5. Normalized On-Resistance
Vs. Temperature
15
25
30
35
D , Drain Current (A)
100
O P E R A TIO N IN TH IS A R E A LIM ITE D
B Y R D S (on)
I D , D rain C urrent (A )
0.06
0.05
0.04
I
= 5.8A
0.03
10
0.01
A
6
V
GS
9
12
, Gate-to-Source Voltage (V)
Fig 7. Typical On-Resistance Vs. Gate
Voltage
15
100µ s
1m s
1
0.02
3
0.1
10m s
T A = 25°C
T J = 150°C
S ingle P ulse
0.1
A
1
10
100
V D S , D rain-to-S ource V oltage (V )
Fig 8. Maximum Safe Operating Area
4
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Fig 6. Typical On-Resistance Vs. Drain
Current
0.07
RDS (on) , Drain-to-Source On Resistance (Ω)
10
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IRF7421D1
Power Mosfet Characteristics
V GS
C iss
C rss
C oss
C , C apacitanc e (pF )
800
=
=
=
=
20
0V ,
f = 1M H z
C gs + C gd , C ds S H O R TE D
C gd
C ds + C gd
V G S , G ate-to-S ource V oltage (V )
1000
C is s
600
C os s
400
C rs s
200
0
10
V D S = 24V
V D S = 15V
16
12
8
4
FO R TE S T C IR C U IT
S E E FIG U R E 9
0
A
1
I D = 4.1A
0
100
5
V D S , D rain-to -S ource V oltage (V )
10
15
20
25
Q G , Total G ate C harge (nC )
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
Thermal Response (Z thJA )
100
D = 0.50
0.20
10
0.10
0.05
0.02
1
PDM
0.01
t1
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJA + TA
0.1
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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A
30
IRF7421D1
Schottky Diode Characteristics
100
Reverse Current - IR (mA)
In sta n ta n e o u s F o rw a rd C u rre n t - I F (A )
10
TJ = 150°C
10
125°C
1
100°C
75°C
0.1
50°C
0.01
25°C
0.001
A
0.0001
0
5
10
15
20
25
30
1
Reverse Voltage - V R (V)
T J = 1 5 0 °C
T J = 1 2 5 °C
Fig. 13 - Typical Values of Reverse
Current Vs. Reverse Voltage
T J = 2 5 °C
0.1
0.0
0.2
0.4
0.6
0.8
1.0
F o rw a rd V o lta g e D ro p - V F M (V )
Fig. 12 -Typical Forward Voltage Drop Characteristics
Ju n ctio n C a p a cita n ce - C
T
(p F )
1000
100
TJ = 2 5 °C
A
10
0
10
20
30
R e ve rse V o lta g e - V R (V )
Fig.14 - Typical Junction Capacitance Vs.
Reverse Voltage
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IRF7421D1
SO-8 Package Details
D IM
D
-B-
5
8
7
5
θ
6
A
5
H
E
-A-
1
2
3
e
6X
0.25 (.010)
4
M
A M
θ
e1
-C-
0.10 (.004)
A1
B 8X
0.25 (.010)
L
8X
6
C
8X
M C A S B S
M IN
M AX
.05 32
.06 88
1 .3 5
1 .75
.00 40
.00 98
0 .1 0
0 .25
B
.01 4
.01 8
0 .3 6
0 .46
C
.0 0 75
.0 09 8
0 .19
0.25
D
.1 8 9
.1 96
4 .80
4.98
E
.15 0
.15 7
3 .8 1
3 .99
e1
A
M IL LIM E T E R S
MAX
A1
e
K x 45°
IN C H E S
M IN
.05 0 B A S IC
1.2 7 B A S IC
.02 5 B A S IC
0 .6 35 B A S IC
H
.2 2 84
.2 44 0
K
.01 1
.01 9
0 .2 8
5 .8 0
0 .48
6.20
L
0 .16
.05 0
0 .4 1
1.27
θ
0°
8°
0°
8°
R E C O M M E N D E D F O O TP R IN T
N O TE S :
0.72 (.028 )
8X
1. D IM E N S IO N IN G A N D TO LE R A N C IN G P E R A N S I Y 14.5M -1982.
2. C O N T R O LLIN G D IM E N S IO N : IN C H .
3. D IM E N S IO N S A R E S H O W N IN M ILLIM E TE R S (IN C H E S ).
4. O U TLIN E C O N F O R M S TO JE D E C O U TLIN E M S -012A A .
5 D IM E N S IO N D O E S N O T IN C LU D E M O LD P R O TR U S IO N S
M O LD P R O TR U S IO N S N O T TO E XC E E D 0.25 (.006).
6 D IM E N S IO N S IS TH E LE N G TH O F LE A D F O R S O LD E R IN G TO A S U B S TR A TE ..
6.46 ( .255 )
1.78 (.070)
8X
1.27 ( .050 )
3X
Part Marking
(IRF7101 example )
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IRF7421D1
Tape and Reel
T E R M IN A L N U M B E R 1
12 .3 ( .48 4 )
11 .7 ( .46 1 )
8 .1 ( .31 8 )
7 .9 ( .31 2 )
F E E D D IR E C T IO N
NOTES:
1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R .
2 . A L L D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S (IN C H E S ).
3 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 .
33 0.00
(12 .9 92 )
MAX.
14 .4 0 ( .5 66 )
12 .4 0 ( .4 88 )
NO TES :
1. C O N T R O LL IN G D IM E N S IO N : M IL L IM E T E R .
2. O U T L IN E C O N F O R M S T O E IA -48 1 & E IA -54 1.
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T 3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: 171 (K&H Bldg.) 30-4 Nishi-ikebukuro 3-chome, Toshima-ku, Tokyo Japan Tel: 81 33 983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 16907 Tel: 65 221 8371
Data and specifications subject to change without notice.
8/98
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