PD- 95299
IRF7342D2PbF
TM
Co-packaged HEXFET® Power
MOSFET and Schottky Diode
l Ideal For Buck Regulator Applications
l P-Channel HEXFET®
l Low VF Schottky Rectifier
l SO-8 Footprint
l Lead-Free
Description
FETKY MOSFET & Schottky Diode
l
1
8
K
A
2
7
K
S
3
6
D
G
4
5
D
A
VDSS = -55V
RDS(on) = 105mΩ
Schottky Vf = 0.61V
Top View
The FETKYTM family of Co-packaged HEXFETs and
Schottky diodes offer the designer an innovative board
space saving solution for switching regulator and
power management applications. HEXFETs utilize
advanced processing techniques to achieve extremely
low on-resistance per silicon area. Combining this
technology with International Rectifier's low forward
drop Schottky rectifiers results in an extremely efficient
device suitable for use in a wide variety of portable
electronics applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics. The
SO-8 package is designed for vapor phase, infrared or
wave soldering techniques.
SO-8
Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted)
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
dv/dt
TJ, TSTG
Parameter
Maximum
Units
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current À
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt Á
Junction and Storage Temperature Range
-3.4
-2.7
-27
2.0
1.3
16
± 20
-5.0
-55 to +150
A
W
mW/°C
V
V/ns
°C
Thermal Resistance
Symbol
RθJL
RθJA
RθJA
Parameter
Junction-to-Drain Lead, MOSFET
Junction-to-Ambient , MOSFET
Junction-to-Ambient , SCHOTTKY
Typ.
Max.
Units
–––
–––
–––
20
62.5
62.5
°C/W
Notes:
Repetitive rating – pulse width limited by max. junction temperature (see fig. 11)
ISD ≤ -3.4A, di/dt ≤ -150A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
Pulse width ≤ 400µs – duty cycle ≤ 2%
Surface mounted on 1 inch square copper board, t ≤ 10sec.
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10/13/04
IRF7342D2PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
V(BR)DSS
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
-55
–––
–––
–––
-1.0
3.3
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
-0.054
95
150
–––
–––
–––
–––
–––
–––
26
3.0
8.4
14
10
43
22
690
210
86
Max. Units
Conditions
–––
V
VGS = 0V, ID = -250µA
––– V/°C Reference to 25°C, ID = -1mA
105
VGS = -10V, ID = -3.4A
mΩ
170
VGS = -4.5V, ID = -2.7A
–––
V
VDS = VGS, ID = -250µA
–––
S
VDS = -10V, ID = -3.1A
-2.0
VDS = -44V, VGS = 0V
µA
-25
VDS = -44V, VGS = 0V, TJ = 70°C
-100
VGS = -20V
nA
100
VGS = 20V
38
ID = -3.1A
4.5
nC VDS = -44V
13
VGS = -10V, See Fig. 6 & 14
22
VDD = -28V
15
ID = -1.0A
ns
64
RG = 6.0Ω
32
VGS = -10V,
–––
VGS = 0V
–––
pF
VDS = -25V
–––
ƒ = 1.0MHz, See Fig. 5
MOSFET Source-Drain Ratings and Characteristics
IS
I SM
VSD
t rr
Q rr
Parameter
Min.
Continuous Source Current(Body Diode) –––
Pulsed Source Current (Body Diode)
–––
Body Diode Forward Voltage
–––
Reverse Recovery Time (Body Diode) –––
Reverse Recovery Charge
–––
Typ.
–––
–––
–––
54
85
Max. Units
Conditions
-2.0
A
-27
-1.2
V
TJ = 25°C, IS = -2.0A, VGS = 0V
80
ns
TJ = 25°C, IF = -2.0A
130
nC di/dt = 100A/µs
Schottky Diode Maximum Ratings
If (av)
Parameter
Max. Average Forward Current
Max. peak one cycle Non-repetitive
Surge current
ISM
Max. Units
3.0
A
490
70
A
Conditions
50% Duty Cycle. Rectangular Wave, TA = 57°C
See Fig. 21
5µs sine or 3µs Rect. pulse
Following any rated
10ms sine or 6ms Rect. pulse load condition &
with Vrrm applied
Schottky Diode Electrical Specifications
Vfm
Parameter
Max. Forward Voltage Drop
Vrrm
Irm
Max. Working Peak Reverse Voltage
Max. Reverse Leakage Current
Ct
Max. Junction Capacitance
2
Max. Units
0.61
0.76
V
0.53
0.65
60
V
2.0 mA
30
145
pF
Conditions
If = 3.0A, Tj = 25°C
If = 6.0A, Tj = 25°C
If = 3.0A, Tj = 125°C
If = 6.0A, Tj = 125°C
Vr = 60V
Tj = 25°C
Tj = 125°C
Vr = 5Vdc ( 100kHz to 1 MHz) 25°C
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IRF7342D2PbF
Power Mosfet Characteristics
100
VGS
TOP
-15V
-10V
-6.0V
-5.0V
-4.5V
-3.5V
-3.0V
BOTTOM -2.5V
10
1
-2.5V
0.1
0.1
10
1
-2.5V
20µs PULSE WIDTH
Tj = 150°C
20µs PULSE WIDTH
Tj = 25°C
1
10
0.1
0.1
100
Fig 1. Typical Output Characteristics
RDS(on) , Drain-to-Source On Resistance
(Normalized)
-I D , Drain-to-Source Current (A)
2.0
TJ = 25 ° C
TJ = 150° C
1
V DS = -25V
20µs PULSE WIDTH
3.0
4.0
5.0
6.0
-VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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10
100
Fig 2. Typical Output Characteristics
100
10
1
-VDS, Drain-to-Source Voltage (V)
-VDS, Drain-to-Source Voltage (V)
0.1
2.0
VGS
-15V
-10V
- 6.0V
-5.5V
-4.5V
-3.5V
-3.0V
BOTTOM - 2.5V
TOP
-ID, Drain-to-Source Current (A)
-ID, Drain-to-Source Current (A)
100
7.0
ID = -3.4 A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = -10V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRF7342D2PbF
Power Mosfet Characteristics
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
C, Capacitance (pF)
800
Ciss
600
400
Coss
Crss
200
0
1
10
20
-VGS , Gate-to-Source Voltage (V)
1000
12
8
4
- -VDS , Drain-to-Source Voltage (V)
0
20
30
40
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
10us
-IID , Drain Current (A)
-ISD , Reverse Drain Current (A)
10
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
10
TJ = 150 ° C
TJ = 25 ° C
1
0.1
0.2
10
100us
1ms
1
10ms
TC = 25 °C
TJ = 150 °C
Single Pulse
V GS = 0 V
0.4
0.6
0.8
1.0
1.2
-VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
VDS =-48V
VDS =-30V
VDS =-12V
16
0
100
ID = -3.1A
1.4
0.1
1
10
100
-VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRF7342D2PbF
Power Mosfet Characteristics
3.5
RD
V DS
-ID , Drain Current (A)
3.0
V GS
D.U.T.
RG
2.5
-
+
2.0
V DD
V GS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
1.5
1.0
Fig 10a. Switching Time Test Circuit
0.5
td(on)
tr
t d(off)
tf
VGS
0.0
25
50
75
100
125
10%
150
TC , Case Temperature ( °C)
90%
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJA )
100
D = 0.50
0.20
10
0.10
0.05
0.02
PDM
0.01
1
t1
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.0001
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJA + TA
0.001
0.01
0.1
1
10
100
t1, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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IRF7342D2PbF
0.25
RDS ( on ) , Drain-to-Source On Resistance Ω
( )
(
RDS(on), Drain-to -Source On ResistanceΩ)
Power Mosfet Characteristics
0.20
0.15
ID = -3.4A
0.10
0.05
3.0
5.0
7.0
9.0
11.0
13.0
15.0
0.35
0.30
VGS = -4.5V
0.25
0.20
0.15
VGS = -10V
0.10
0.05
0.0
4.0
-VGS, Gate -to -Source Voltage (V)
Fig 12. Typical On-Resistance Vs.
Gate Voltage
8.0
12.0
16.0
-ID , Drain Current ( A )
Fig 13. Typical On-Resistance Vs.
Drain Current
Current Regulator
Same Type as D.U.T.
50KΩ
QG
QGS
.2µF
.3µF
QGD
D.U.T.
+VDS
VGS
VG
-3mA
Charge
Fig 14a. Basic Gate Charge Waveform
6
12V
IG
ID
Current Sampling Resistors
Fig 14b. Gate Charge Test Circuit
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IRF7342D2PbF
Power Mosfet Characteristics
100
2.0
80
ID = -250µA
Power (W)
-VGS(th) ( V )
1.8
1.6
1.4
60
40
20
1.2
0
1.0
-75
-50
-25
0
25
50
75
100
TJ , Temperature ( °C )
Fig 15. Typical Vgs(th) Vs.
Junction Temperature
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125
150
0.001
0.010
0.100
1.000
10.000
100.000
Time (sec)
Fig 16. Typical Power Vs. Time
7
IRF7342D2PbF
Schottky Diode Characteristics
100
100
Instantaneous Forward Current - I F (A)
Reverse Current - I R (mA)
T J= 150°C
10
125°C
100°C
1
75°C
0.1
50°C
0.01
25°C
T J= 150°C
0.001
T J= 125°C
10
0
10
T J= 25°C
20
30
40
50
60
Reverse Voltage - V R (V)
Fig. 18 - Typical Values of
Reverse Current Vs. Reverse Voltage
1
0
0.4
0.8
1.2
1.6
2
2.4
2.8
Forward Voltage Drop - V FM(V)
Fig. 17 - Maximum Forward Voltage Drop
Characteristics
Junction Capacitance - C T (pF)
1000
T J= 25°C
100
10
0
10
20
30
40
50
60
Reverse Voltage - V R(V)
Fig. 19 - Typical Junction Capacitance
Vs. Reverse Voltage
8
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IRF7342D2PbF
Schottky Diode Characteristics
Thermal Response(Z thJA )
100
D = 0.50
10
0.20
0.10
0.05
PDM
0.02
1
0.01
t1
t2
Notes:
1. Duty factor D =t 1 / t 2
2. Peak TJ = P DM x ZthJA + TA
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 20. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Allowable Ambient Temprature - (°C)
180
160
140
RthJA = 62.5 °C/W
120
100
DC
80
60
see note (4)
40
Square wave ( D = 0.50)
20
80 % Rated VR applied
0
0
1
2
3
4
5
6
Average Forward Current - F(AV)
I
(A)
Fig.21 - Maximum Allowable Ambient
Temp. Vs. Forward Current
Note (4) Formula used: TC = TJ - (Pd + PdREV) x RthJA ;
Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) ;
PdREV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1 = 80% rated VR
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IRF7342D2PbF
SO-8 (Fetky) Package Outline
D
DIM
B
5
A
8
6
7
6
H
E
1
6X
2
3
0.25 [.010]
4
A
e
e1
8X b
0.25 [.010]
A
A1
MILLIMET ERS
MAX
MIN
.0532
.0688
1.35
1.75
A1 .0040
.0098
0.10
0.25
b
.013
.020
0.33
0.51
c
.0075
.0098
0.19
0.25
D
.189
.1968
4.80
5.00
E
.1497
.1574
3.80
4.00
e
.050 BASIC
1.27 BAS IC
e1
A
5
INCHES
MIN
MAX
.025 BASIC
0.635 BAS IC
H
.2284
.2440
5.80
6.20
K
.0099
.0196
0.25
0.50
L
.016
.050
0.40
1.27
y
0°
8°
0°
8°
K x 45°
C
y
0.10 [.004]
8X c
8X L
7
C A B
FOOTPRINT
NOTES :
1. DIMENS IONING & TOLERANCING PER AS ME Y14.5M-1994.
2. CONTROLLING DIMENS ION: MILLIMETER
8X 0.72 [.028]
3. DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ].
4. OUT LINE CONF ORMS TO JEDEC OUTLINE MS -012AA.
5 DIMENS ION DOES NOT INCLUDE MOLD PROTRUS IONS .
MOLD PROTRUS IONS NOT TO E XCEED 0.15 [.006].
6.46 [.255]
6 DIMENS ION DOES NOT INCLUDE MOLD PROTRUS IONS .
MOLD PROTRUS IONS NOT TO E XCEED 0.25 [.010].
7 DIMENS ION IS T HE LENGTH OF LEAD F OR S OLDERING TO
A S UBS TRATE.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 (Fetky) Part Marking Information
EXAMPLE: T HIS IS AN IRF7807D1 (FET KY)
INTERNAT IONAL
RECT IFIER
LOGO
10
XXXX
807D1
DAT E CODE (YWW)
P = DIS GNATES LEAD - FREE
PRODUCT (OPTIONAL)
Y = LAS T DIGIT OF T HE YEAR
WW = WEEK
A = AS S EMBLY S IT E CODE
LOT CODE
PART NUMBER
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IRF7342D2PbF
SO-8 Tape and Reel
Dimensions are shown in milimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.10/04
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