PD- 93761 IRF7807D1 FETKY™ MOSFET / SCHOTTKY DIODE • Co-Pack N-channel HEXFET Power MOSFET and Schottky Diode • Ideal for Synchronous Rectifiers in DC-DC Converters Up to 5A Output • Low Conduction Losses • Low Switching Losses • Low Vf Schottky Rectifier 1 8 K/D A/S 2 7 K/D A/S 3 6 K/D G 4 5 K/D D A/S SO-8 Description The FETKY™ family of Co-Pack HEXFETMOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. HEXFET power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier’s low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications. Top View Device Features (Max Values) IRF7807D1 VDS RDS(on) Qg Qsw Qoss 30V 25mΩ 14nC 5.2nC 18.4nC The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics. The SO8 package is designed for vapor phase, infrared or wave soldering techniques. Absolute Maximum Ratings Parameter Symbol Max. Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±12 ID 8.3 Continuous Drain or Source 25°C Current (VGS ≥ 4.5V) 70°C Pulsed Drain Current Power Dissipation 25°C 6.6 IDM 66 PD 2.5 70°C Schottky and Body Diode 25°C Average ForwardCurrent 70°C Junction & Storage Temperature Range Thermal Resistance Parameter Maximum Junction-to-Ambient www.irf.com 1.6 Units V A W IF (AV) 3.5 A TJ, TSTG –55 to 150 °C RθJA Max. 50 Units °C/W 2.2 1 11/8/99 IRF7807D1 Electrical Characteristics Parameter Min Drain-to-Source Breakdown Voltage* V(BR)DSS Static Drain-Source on Resistance* RDS(on) Typ Max 30 17 Gate Threshold Voltage* VGS(th) 25 1.0 Units Conditions V VGS = 0V, ID = 250µA mΩ VGS = 4.5V, ID = 7A V VDS = VGS,ID = 250µA Drain-Source Leakage Current* IDSS 90 7.2 µA mA VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, Tj = 125°C Gate-Source Leakage Current* Total Gate Charge Synch FET* Total Gate Charge Control FET* Pre-Vth Gate-Source Charge Post-Vth Gate-Source Charge Gate to Drain Charge Switch Charge* (Qgs2 + Qgd) IGSS +/- 100 nA VGS = +/-12V Qgsync 10.5 14 Qgcont 12 17 Qgs1 2.1 Qgs2 0.76 Qgd QSW 2.9 3.66 5.2 Output Charge* Qoss 15.3 18.4 Gate Resistance Rg 1.2 VDS<100mV, VGS = 5V, ID = 7A VDS= 16V, VGS = 5V, ID = 7A VDS = 16V, ID = 7A nC VDS = 16V, VGS = 0 Ω Schottky Diode & Body Diode Ratings and Characteristics Parameter Diode Forward Voltage Min Typ VSD Reverse Recovery Time trr 51 Reverse Recovery Charge Forward Turn-On Time Qrr ton 48 * Max 0.5 0.39 Units Conditions V Tj = 25°C, Is = 1A, VGS =0V Tj = 125°C, Is = 1A, VGS =0V ns Tj = 25°C, Is = 7.0A, VDS = 16V nC di/dt = 100A/µs Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Repetitive rating; pulse width limited by max. junction temperature. Pulse width ≤ 300 µs; duty cycle ≤ 2%. When mounted on 1 inch square copper board, t < 10 sec. 50% Duty Cycle, Rectangular Devices are 100% tested to these parameters. 2 www.irf.com IRF7807D1 100 100 VGS 4.5V 3.5V 3.0V BOTTOM 2.5V VGS 4.5V 3.5V 3.0V BOTTOM 2.5V TOP 10 ID, Drain-to-Source Current (A) ID , Drain-to-Source Current ( A ) TOP 2.5V 2.5V 10 380µs PULSE WIDTH Tj = 25°C 380µs PULSE WIDTH Tj = 150°C 1 1 0.1 1 10 0.1 VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 10 Fig 2. Typical Output Characteristics 60 70 VGS TOP 4.5V 3.5V 3.0V 2.5V 2.0V BOTTOM 0.0V 50 40 VGS 4.5V 3.5V 3.0V 2.5V 2.0V BOTTOM 0.0V TOP 60 IS, Source-to-Drain Current (A) IS, Source-to-Drain Current (A) 1 VDS, Drain-to-Source Voltage (V) 30 20 0.0V 10 380µs PULSE WIDTH Tj = 25°C 0 50 40 30 20 10 380µS PULSE WIDTH 0.0V Tj = 150°C 0 0 0.2 0.4 0.6 0.8 VSD, Source-to-Drain Voltage (V) Fig 3. Typical Reverse Output Characteristics www.irf.com 1 0 0.2 0.4 0.6 0.8 1 VSD, Source-to-Drain Voltage (V) Fig 4. Typical Reverse Output Characteristics 3 IRF7807D1 VGS = Ciss = Crss = Coss = C, Capacitance (pF) 1600 1200 6.0 0V, f = 1MHz Cgs + Cgd , Cds SHORTED Cgd Cds + Cgd VGS, Gate-to-Source Voltage (V) 2000 Ciss 800 Coss 400 Crss VDS = 16V 4.0 2.0 0.0 0 1 ID= 7.0A 10 100 0 VDS , Drain-to-Source Voltage (V) ID, Drain-to-Source Current ( A) 1.5 (Normalized) RDS(on) , Drain-to-Source On Resistance 8 10 12 100 VGS = 4.5V 1.0 T J = 25°C T J = 150°C 10 VDS = 10V 380µs PULSE WIDTH 1 0.5 0 20 40 60 80 100 120 140 160 T J , Junction Temperature ( °C ) Fig 7. Normalized On-Resistance Vs. Temperature 4 6 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage ID = 7.0A -60 -40 -20 4 QG, Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 2.0 2 2.5 3.0 3.5 VGS, Gate-to-Source Voltage (V) Fig 8. Typical Transfer Characteristics www.irf.com 0.024 0.05 0.04 0.03 ID = 7.0A 0.02 0.01 2.0 4.0 6.0 8.0 10.0 R DS (on) , Drain-to-Source On Resistance( Ω ) RDS(on) , Drain-to -Source On Resistance ( Ω ) IRF7807D1 0.022 VGS = 4.5V 0.020 VGS = 10V 0.018 0.016 0 20 Fig 9. On-Resistance Vs. Gate Voltage 40 60 80 I D , Drain Current (A) VGS, Gate -to -Source Voltage (V) Fig 10. On-Resistance Vs. Drain Current Thermal Response (Z thJA ) 100 D = 0.50 10 0.20 0.10 0.05 0.02 0.01 1 P DM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.1 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient (HEXFET MOSFET) www.irf.com 5 IRF7807D1 MOSFET , Body Diode & Schottky Diode Characteristics 100 100 Reverse Current - I R ( mA ) 10 Tj = 125°C Instantaneous Forward Current - I F ( A ) Tj = 25°C 10 Tj = 150°C 125°C 1 100°C 0.1 75°C 50°C 0.01 25°C 0.001 0.0001 0 5 10 15 20 25 30 Reverse Voltage - VR (V) Fig. 13 - Typical Values of Reverse Current Vs. Reverse Voltage 1 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 Forward Voltage Drop - V F ( V ) Fig. 12 - Typical Forward Voltage Drop Characteristics 6 www.irf.com IRF7807D1 SO-8 Package Details SO-8 Part Marking www.irf.com 7 IRF7807D1 SO-8 Tape and Reel T E R M IN A L N U M B E R 1 12 .3 ( .48 4 ) 11 .7 ( .46 1 ) 8 .1 ( .31 8 ) 7 .9 ( .31 2 ) F E E D D IR E C T IO N NOTES: 1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R . 2 . A L L D IM E N S IO N S A R E S H O W N IN M IL L IM E TE R S (IN C H E S ). 3 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1. 33 0.00 (12 .9 92 ) MAX. 14 .4 0 ( .5 66 ) 12 .4 0 ( .4 88 ) NO TES : 1. C O N T R O LL IN G D IM E N S IO N : M IL L IM E T E R . 2. O U T L IN E C O N F O R M S T O E IA -48 1 & E IA -54 1. WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 Data and specifications subject to change without notice. 11/99 8 www.irf.com