PD-97803A HFB60HNX20 Ultrafast, Soft Recovery Diode FRED Features • • • • • • Reduced RFI and EMI Reduced RFI and EMI Extensive Characterization of Recovery Parameters Hermetic Surface Mount ESD Rating: Class 3B per MIL-STD-750, Method 1020 VR = 200V IF(AV) = 60A trr = 50ns Description These Ultrafast, soft recovery diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An extensive characterization of the recovery behaviorfor different values of current, temperature and di/dt simplifies the calculations of losses in the operating conditions. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses. Absolute Maximum Ratings Parameter VR IF(AV) IFSM PD @ TC = 25°C TJ, TSTG Cathode to Anode Voltage Continuous Forward Current, TC = 55°C Single Pulse Forward Current, TC = 25°C Maximum Power Dissipation Operating Junction and Storage Temperature Range Max. Units 200 60 500 125 -55 to +150 V A W °C Notes: D.C. = 50% rect. wave 1/2 sine wave, 60 Hz , P.W. = 8.33 ms CASE STYLE CATHODE ANODE SupIR SMD -2 TM www.irf.com 1 01/15/13 HFB60HNX20 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter VBR VF Min. Typ. Max. Units — — — 1.15 V Test Conditions Cathode Anode Breakdown Voltage Forward Voltage 200 — IR = 100µA IF = 30A, TJ =-55°C See Fig. 1 — — 0.97 — — 1.08 — — 1.30 IF =120A, TJ = 25°C — — 0.8 IF = 30A, TJ =125°C IF = 30A, TJ = 25°C V IF = 60A, TJ = 25°C See Fig. 2 IR Reverse Leakage Current See Fig. 2 — — — — 50 1.0 µA mA VR = VR Rated VR = VR Rated, TJ = 125°C CT Junction Capacitance, See Fig. 3 — — 190 pF VR = 200V LS Series Inductance — 5.9 — nH Measured from center of cathode pad to center of anode pad Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified) Parameter trr1 trr2 IRRM1 IRRM2 Q rr1 Q rr2 di(rec)M/dt1 di(rec)M/dt2 Min. Typ. Max. Units Reverse Recovery Time Peak Recovery Current Reverse Recovery Charge Peak Rate of Fall of Recovery Current During tb — — — — — — — — 45 71 5.3 10.3 120 366 590 1290 50 — — — — — — — Test Conditions TJ = 25°C See Fig. ns TJ = 125°C 5 IF = 60A TJ = 25°C See Fig. A TJ = 125°C 6 VR = 160V TJ = 25°C See Fig. nC TJ = 125°C 7 dif/dt = 200A/µs TJ = 25°C See Fig. A/µs TJ = 125°C 8 Thermal-Mechanical Characteristics Parameter RthJC Wt 2 Junction-to-Case Weight Typ. Max. Units — 3.0 1.0 — °C/W g www.irf.com HFB60HNX20 1000 100 Reverse Current -RI ( uA ) Instantaneous Forward Current - I F (A) 125°C 10 100 100°C 75°C 1 25°C 0.1 0.01 0.001 0 40 80 120 160 200 Reverse Voltage - V R (V) Fig. 2 - Typical Reverse Current Vs. Reverse Voltage 10000 10 Junction Capacitance - C T (pF) Tj = 125°C Tj = 25°C Tj = -55°C 1000 T J = 25°C 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 100 Forward Voltage Drop - V F (V) 0 40 80 120 160 200 Reverse Voltage - V R (V) Fig. 1 - Maximum Forward Voltage Drop Vs. Instantaneous Forward Current Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage Thermal Response ( Z thJC ) 10 1 D = 0.50 0.20 0.1 0.02 0.05 0.01 P DM 0.10 t1 SINGLE PULSE ( THERMAL RESPONSE ) t2 0.01 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 1E-005 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 4 - Maximum Thermal Impedance Zthjc Characteristics www.irf.com 3 HFB60HNX20 100 100 VR = 160V TJ = 125°C TJ = 25°C IF = 60A IF = 30A 60 IF = 60A IF = 30A IRRM - ( A ) trr - ( ns ) 80 IF = 120A I F = 120A 10 VR = 160V 40 TJ = 125°C TJ = 25°C 20 100 1 1000 100 1000 dif / dt - ( A / µs ) dif / dt - ( A / µs ) Fig. 5 - Typical Reverse Recovery Vs. dif/dt, Fig. 6 - Typical Recovery Current Vs. dif/dt, 10000 10000 IF = 30A IF = 120A di ( rec )M / dt - ( A / µs ) IF = 60A 1000 Qrr - ( nC ) IF = 30A 100 VR = 160V IF = 60A IF = 120A 1000 VR = 160V TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C 10 100 1000 dif / dt - ( A / µs ) Fig. 7 - Typical Stored Charge Vs. dif/dt 4 100 100 1000 dif / dt - ( A / µs ) Fig. 8 - Typical di(rec)M/dt Vs. dif/dt www.irf.com HFB60HNX20 3 t rr IF REVERSE RECOVERY CIRCUIT tb ta 0 VR = 200V 2 Q rr I RRM 4 0.5 I RRM di(rec)M/dt 0.01 Ω L = 70µH D.U.T. dif/dt ADJUST G 5 0.75 I RRM D IRFP250 S Fig. 9 - Reverse Recovery Parameter Test Circuit 1 di f /dt 1. dif/dt - Rate of change of current through zero crossing 2. IRRM - Peak reverse recovery current 3. trr - Reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current 4. Qrr - Area under curve defined by trr and IRRM trr X IRRM Qrr = 2 5. di(rec)M/dt - Peak rate of change of current during tb portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions Case Outline and Dimensions — SupIR SMDTM -2 PAD ASSIGNMENTS 1 = CATHODE 2=N/C 3 = ANODE IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 01/2013 www.irf.com 5