SEE Summary Report - RH, G5, N, MR, 30V Single-Event-Effects Summary Report IR RAD-Hard Gen-5 30V N-channel SEE Qualifications of: JANTXVR, F, G, H AND JANSR, F, G, H 2N7467U2 MIL-PRF-19500/683 JANTXVR, F, G, H AND JANSR, F, G, H 2N7478T1 MIL-PRF-19500/697 JANTXVR, F, G, H AND JANSR, F, G, H 2N7479U3 MIL-PRF-19500/703 JANTXVR, F, G, H AND JANSR, F, G, H 2N7482T3 MIL-PRF-19500/702 JANTXVR, F, G, H AND JANSR, F, G, H 2N7491T2 MIL-PRF-19500/701 JANTXVR, F, G, H AND JANSR, F, G, H 2N7494U5 MIL-PRF-19500/700 IRHNA57Z60, IRHNA53Z60, IRHNA56Z60, IRHNA58Z60 SCV AND SCS IRHMS57Z60, IRHMS53Z60, IRHMS56Z60, IRHMS58Z60 SCV AND SCS IRHNJ57Z30, IRHNJ53Z30, IRHNJ56Z30, IRHNJ58Z30 SCV AND SCS IRHY57Z30CM, IRHY53Z30CM, IRHY56Z30CM, IRHY58Z30CM SCV AND SCS IRHF57Z30, IRHF53Z30, IRHF56Z30, IRHF58Z30 SCV AND SCS IRHE57Z30, IRHE53Z30, IRHE56Z30, IRHES58Z30 SCV AND SCS Individual-SEE-Report_Fab2-Quals.xls 57Zx0-Qual_FINAL, Page 1 of 5 05-01-2009, updated 10/20/2009 SEE Summary Report - RH, G5, N, MR, 30V Fab-2 Wafer Lot: Q780265 Split A SEE Test Date: February 11th & 12th 2009 SEE Test Facility: Brookhaven National Lab (BNL) IR Fab-5 Specs VDS Bias (Volts) Ion Au Br I LET 37.34 59.88 82.43 Energy 285 350 28.6 Range 36.9 33.1 354 Run Numbers 205-229 567-598 941-959 IR Fab-2 Qual to Specs VDS Bias (Volts) Br; I; Au; LET=37.34 LET=59.88 LET=82.43 VGS ; 36.9µm; ; 33.1µm; ; 28.6µm; 350MeV 354MeV (Volts) 285MeV 0 30 25 25 -5 30 25 25 -10 30 20 20 -15 22.5 15 -20 15 7.5 New Gold Specs replace Old Copper Specs LET=37; Br; LET=60; Xe; LET=28; 37µm; 33µm; Cu; 40µm; 285MeV 344MeV 261MeV VGS Bias 0 -5 -10 -15 -20 30 30 30 22.5 15 25 25 20 15 7.5 30 30 30 25 15 SEE Response - R5, 30V, N, MR 35 35 LET=37; Br; 37μm; 285MeV 25 20 LET=60; Xe; 33μm; 344MeV 15 10 5 LET=28; Cu; 40μm; 261MeV 0 0 -5 -10 -15 Bias VGS (Volts) -20 Br; LET=37.34; 36.9μm; 285MeV 30 Bias VDS (Volts) 30 Bias VDS (Volts) SEE Response - G5, 30V, N, MR 25 20 I; LET=59.88; 33.1μm; 350MeV 15 10 5 0 -5 -10 -15 Bias VGS (Volts) Run No. Ion DUT Id Socket Wafer Serial Batch 205 206 207 208 209 210 211 212 213 214 215 216 217 218 219 220 221 222 223 224 225 226 227 228 229 Br Br Br Br Br Br Br Br Br Br Br Br Br Br Br Br Br Br Br Br Br Br Br Br Br M1 M1 M1 M1 M1 M1 M1 M1 M1 M1 M2 M2 M2 M3 M3 M3 M4 M4 M4 M5 M5 M5 M6 M6 M6 1 1 1 1 1 1 1 1 1 1 2 2 2 3 3 3 4 4 4 5 5 5 6 6 6 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 32 32 32 32 32 32 32 32 32 32 33 33 33 34 34 34 35 35 35 36 36 36 37 37 37 7 7 7 7 7 7 7 7 7 7 7 7 7 7 7 7 7 7 7 7 7 7 7 7 7 Individual-SEE-Report_Fab2-Quals.xls Au; LET=82.43; 28.6μm; 354MeV 0 57Zx0-Qual_FINAL, Page 2 of 5 VGS Volts -10 -10 -10 -10 -10 -15 -15 -20 -15 -15 -20 -20 -20 -10 -15 -20 -20 -15 -10 -10 -15 -20 -20 -15 -10 -20 VDS Volts 20 24 26 28 30 20 22.5 15 25 30 20 22 23 30 22.5 15 15 22.5 30 30 22.5 15 15 22.5 30 Pass/Fail Blank=Pass F CurvePoint1 CurvePoint2 CurvePoint3 CurvePoint3 CurvePoint2 CurvePoint1 CurvePoint1 CurvePoint2 CurvePoint3 CurvePoint3 CurvePoint2 CurvePoint1 05-01-2009, updated 10/20/2009 SEE Summary Report - RH, G5, N, MR, 30V 16 16 16 16 16 16 16 16 16 16 16 16 16 16 16 16 16 16 16 16 16 16 16 16 16 16 16 16 16 16 16 16 VGS Volts -5 -5 -10 -10 -15 -15 -20 -20 -10 -15 -20 -5 -10 -10 -15 -15 -20 -20 -5 -10 -10 -15 -15 -20 -20 -5 -10 -10 -15 -15 -20 -20 VDS Volts 25 30 20 25 15 20 7.5 10 30 25 15 25 20 30 15 25 7.5 15 25 20 30 15 25 7.5 15 25 20 30 15 25 7.5 15 26 26 26 26 26 26 26 26 26 26 26 26 26 26 26 26 26 26 26 -5 -5 -5 -5 -10 -10 -10 -5 -5 -10 -10 -5 -10 -5 -10 -5 -10 -5 -10 15 20 25 30 20 25 30 25 30 20 25 25 20 25 20 25 20 25 20 Run No. Ion DUT Id Socket Wafer Serial Batch 567 568 569 570 571 572 573 574 575 576 577 578 579 580 581 582 583 584 585 586 587 588 589 590 591 592 593 594 595 596 597 598 I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I M10 M10 M10 M10 M10 M10 M10 M10 M10 M10 M10 M11 M11 M11 M11 M11 M11 M11 M12 M12 M12 M12 M12 M12 M12 M13 M13 M13 M13 M13 M13 M13 1 1 1 1 1 1 1 1 1 1 1 2 2 2 2 2 2 2 3 3 3 3 3 3 3 4 4 4 4 4 4 4 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 24 24 24 24 24 24 24 24 24 24 24 25 25 25 25 25 25 25 26 26 26 26 26 26 26 27 27 27 27 27 27 27 941 942 943 944 945 946 947 948 949 950 951 952 953 954 955 956 957 958 959 Au Au Au Au Au Au Au Au Au Au Au Au Au Au Au Au Au Au Au M18 M18 M18 M18 M18 M18 M18 M19 M19 M19 M19 M20 M20 M21 M21 M22 M22 M23 M23 1 1 1 1 1 1 1 2 2 2 2 3 3 4 4 5 5 6 6 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 41 41 41 41 41 41 41 42 42 42 42 43 43 44 44 45 45 46 46 Individual-SEE-Report_Fab2-Quals.xls 57Zx0-Qual_FINAL, Page 3 of 5 Pass/Fail Blank=Pass CurvePoint1 CurvePoint2 CurvePoint3 CurvePoint4 EngCurvePoint1 EngCurvePoint2 EngCurvePoint3 CurvePoint1 CurvePoint2 EngCurvePoint1 CurvePoint3 EngCurvePoint2 CurvePoint4 EngCurvePoint3 CurvePoint1 CurvePoint2 EngCurvePoint1 CurvePoint3 EngCurvePoint2 CurvePoint4 EngCurvePoint3 CurvePoint1 CurvePoint2 EngCurvePoint1 CurvePoint3 EngCurvePoint2 CurvePoint4 EngCurvePoint3 F F CurvePoint1 CurvePoint2 CurvePoint1 CurvePoint2 CurvePoint1 CurvePoint2 CurvePoint1 CurvePoint2 05-01-2009, updated 10/20/2009 SEE Summary Report - RH, G5, N, MR, 30V RadHard MOSFET - G5, Hex 3, 30V, N-channel Electrcial Codes: Expected Good Devices Post - SEE Electricals Data SEE-Failed Devices SEE-UnTested Devices Parameter I DSS Conditions VDS=-24V VGS=0V Limits Unit SEE Id M10 M11 M12 M13 M1 M2 M3 M4 M5 M6 M18 M19 M20 M21 M22 M23 Log Serial 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 10µA Max nA I GSSf VGS=-20V VDS=0V I GSSr V GS(th) R DS(on) VSD ID=22A VGS=0V IS=22A 30V Min 20mOhms 1.2V Max V mOhms V VGS=20V IDS=1mA IDSS=1mA VDS=0V VDS=VGS -100nA Max 100nA Max 2V to 4V nA BV DSS nA V Q780265A (BNL 02-11 & 02-12-2009) IRHC57Z30 0.21 0.18 0.22 2.72 1.75 1.94 2.39 46.78 0.25 0.24 15.60 1.85 3.26 0.30 0.34 0.34 0.33 0.23 0.20 0.22 514300.00 3181000.00 2.53 2.62 2.77 2.55 0.51 0.50 0.51 0.50 0.51 0.48 0.46 0.52 0.52 0.47 0.52 0.52 0.47 0.46 0.49 0.45 0.52 0.52 0.46 0.52 909600.00 999900.00 0.50 0.50 0.51 0.50 Individual-SEE-Report_Fab2-Quals.xls 0.15 0.14 0.15 0.15 0.15 0.13 0.14 0.15 0.15 0.13 0.15 0.15 0.14 0.13 0.14 0.14 0.15 0.15 0.13 0.15 999900.00 999900.00 0.14 0.14 0.15 0.15 3.580 3.572 3.581 3.567 3.574 3.683 3.667 3.672 3.610 3.652 3.674 3.677 3.659 3.656 3.643 3.605 3.574 3.649 3.641 3.637 3.667 3.668 3.656 3.603 3.579 3.543 35.3 35.4 35.3 35.3 35.3 35.1 35.2 35.2 35.4 35.3 35.2 35.2 35.2 35.3 35.3 35.4 35.4 35.3 35.4 35.3 34.5 8.3 35.2 35.4 35.4 35.4 57Zx0-Qual_FINAL, Page 4 of 5 15.40 15.48 15.61 15.67 15.68 15.51 15.37 15.42 15.32 15.79 15.54 15.40 15.40 15.45 15.09 15.12 15.63 15.30 15.42 15.69 15.95 21.09 15.25 15.44 15.54 15.35 Good Matched Electricals to SEE 0.964 0.964 0.966 0.967 0.969 0.966 0.964 0.962 0.961 0.968 0.968 0.964 0.961 0.962 0.958 0.958 0.964 0.961 0.963 0.972 0.968 0.961 0.958 0.963 0.965 0.961 Unused Unused Unused Pass -5/25,-10/20,-15/15,-20/7.5 I Pass -5/25,-10/20,-15/15,-20/7.5 I Pass -5/25,-10/20,-15/15,-20/7.5 I Pass -5/25,-10/20,-15/15,-20/7.5 I Unused Unused Unused Unused Failed -15/30 Br Failed -20/23 Br Pass -10/30,-15/22.5,-20/15 Br Pass -10/30,-15/22.5,-20/15 Br Pass -10/30,-15/22.5,-20/15 Br Pass -10/30,-15/22.5,-20/15 Br Unused Unused Unused Failed -10/30 Au Failed -10/25 Au Pass -5/25, -10/20 Au Pass -5/25, -10/20 Au Pass -5/25, -10/20 Au Pass -5/25, -10/20 Au 05-01-2009, updated 10/20/2009 SEE Summary Report - RH, G5, N, MR, 30V LET=38±5%; LET=61±5%; LET=84±5%; Final QPL Specs 31µm±10%; 28µm±7.5%; VGS 38µm±7.5%; 300MeV±7.5% 330MeV±7.5% 350MeV±10% (Volts) 0 30 25 25 -5 30 25 25 -10 30 20 20 -15 22.5 15 -20 15 7.5 for 2N7467U2/683 (IRHNA57Z60) and 2N7478T1/697 (IRHMS57Z60) for 2N7479U3/703 (IRHNJ57Z30) and 2N7482T3/702 (IRHY57Z30CM) for 2N7491T2/701 (IRHF57Z30) and 2N7494U5/700 (IRHE57Z30) Single-Event-Effects RESPONSE 35 LET=38±5%; 38μm±7.5%; 300MeV±7.5% Bias VDS (Volts) 30 25 20 LET=61±5%; 31μm±10%; 330MeV±7.5% 15 10 LET=84±5%; 28μm±7.5%; 350MeV±10% 5 0 0 -5 -10 -15 -20 Bias VGS (Volts) Individual-SEE-Report_Fab2-Quals.xls 57Zx0-Qual_FINAL, Page 5 of 5 05-01-2009, updated 10/20/2009