Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.886 IRHN9130 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTOR P-CHANNEL RAD HARD Ω , RAD HARD HEXFET -100 Volt, 0.30Ω Product Summary International Rectifier’s P-channel RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiation doses as high as 105 Rads (Si). Under identical pre- and post-radiation test conditions, International Rectifier’s P-channel RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si) total dose. No compensation in gate drive circuitry is required. These devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Single Event Effect, (SEE), testing of International Rectifier ’s P-channel RAD HARD HEXFETs has demonstrated virtual immunity to SEE failure. Since the P-channel RAD HARD process utilizes International Rectifier’s patented HEXFET technology, the user can expect the highest quality and reliability in the industry. P-channel RAD HARD HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits in space and weapons environments. Part Number IRHN9130 BV DSS -100V ID -11A Features: n n n n n n n n n n n n n Radiation Hardened up to 1 x 10 5 Rads (Si) Single Event Burnout (SEB) Hardened Single Event Gate Rupture (SEGR) Hardened Gamma Dot (Flash X-Ray) Hardened Neutron Tolerant Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Rating Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Lightweight Absolute Maximum Ratings Pre-Radiation Parameter I D @ VGS = -12V, TC = 25°C ID @ VGS = -12V, TC = 100°C IDM PD @ TC = 25°C RDS(on) 0.30Ω VGS EAS I AR EAR dv/dt Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Á Avalanche Current À Repetitive Avalanche Energy À Peak Diode Recovery dv/dt  TJ TSTG Operating Junction Storage Temperature Range Package Mount Surface Temperature Weight To Order IRHN9130 -11 -7.0 -44 75 0.60 ±20 500 -11 7.5 -5.5 Units A W W/K Ä V mJ A mJ V/ns -55 to 150 300 (for 5 seconds) 2.6 (typical) oC g Previous Datasheet Index Next Data Sheet IRHN9130 Device Pre-Radiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Min. Typ. Max. Units -100 — — -0.087 — — V V/°C — — -2.0 2.5 — — — — — — — — 0.30 0.35 -4.0 — -25 -250 IGSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (“Miller”) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance — — — — — — — — — — — — — — — — — — — TBD -100 100 45 10 25 30 70 70 70 — LS Internal Source Inductance — TBD — Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 1100 310 55 — — — Test Conditions VGS = 0V, ID = -1.0 mA Reference to 25°C, ID = -1.0 mA nC VGS = -12V, ID = -7.0A à VGS = -12V, ID = -11A VDS = VGS, I D = -1.0 mA VDS > -15V, IDS = -7.0A à VDS = 0.8 x Max Rating,VGS = 0V VDS = 0.8 x Max Rating VGS = 0V, TJ = 125°C VGS = -20V VGS = +20V VGS = -12V, ID = -11A VDS = Max. Rating x 0.5 ns VDD = -50V, ID = -11A, RG = 7.5Ω Ω V S( ) Ω Parameter BVDSS Drain-to-Source Breakdown Voltage ∆BVDSS/∆TJ Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current µA nA nH pF Measured from the Modified MOSFET drain lead, 6mm (0.25 symbol showing the in.) from package to internal inductances. center of die. Measured from the source lead, 6mm (0.25 in.) from package to source bonding pad. VGS = 0V, VDS = -25V f = 1.0 MHz Source-Drain Diode Ratings and Characteristics Parameter Min. Typ. Max. Units IS I SM Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) À VSD t rr Q RR t on Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time — — — — -11 -44 A Test Conditions Modified MOSFET symbol showing the integral reverse p-n junction rectifier. Tj = 25°C, IS = -11A, VGS = 0V à Tj = 25°C, IF = -11A, di/dt ≤ -100A/µs VDD ≤ -50V à Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. — — — — — — -3.0 250 2.6 V ns µC Thermal Resistance Parameter Min. Typ. Max. Units RthJC Junction-to-Case — — 1.67 RthJ-PCB Junction-to-PC Board — TBD — Test Conditions K/WÄ To Order Soldered to a copper clad PC board Previous Datasheet Index Next Data Sheet IRHN9130 Device Radiation Characteristics Radiation Performance of P-Channel Rad Hard HEXFETs International Rectifier Radiation Hardened HEXFETs are tested to verify their hardness capability. The hardness assurance program at International Rectifier uses two radiation environments. Both pre- and post-radiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. It should be noted that at a radiation level of 1 x 105 Rads (Si), no change in limits are specified in DC parameters. Every manufacturing lot is tested in a low dose rate (total dose) environment per MlL-STD-750, test method 1019. International Rectifier has imposed a standard gate voltage of -12 volts per note 6 and a VDSS bias condition equal to 80% of the device rated voltage per note 7. Pre- and post-radiation limits of the devices irradiated to 1 x 105 Rads (Si) are identical and are presented in Table 1. The values in Table 1 will be met for either of the two low dose rate test circuits that are used. Table 1. Low Dose Rate Å Æ VSD International Rectifier radiation hardened P-Channel HEXFETs are considered to be neutron-tolerant, as stated in MIL-PRF-19500 Group D. International Rectifier P-Channel radiation hardened HEXFETs have been characterized in heavy ion Single Event Effects (SEE) environment and results are shown in Table 3. IRHN9130 Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on)1 High dose rate testing may be done on a special request basis, using a dose rate up to 1 x 1012 Rads (Si)/Sec. 100K Rads (Si) Drain-to-Source Breakdown Voltage Gate Threshold Voltage à Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source à On-State Resistance One Diode Forward Voltage à Units Test Conditions É V µA Ω VGS = 0V, ID = -1.0 mA VGS = VDS , ID = -1.0 mA VGS = -20V VGS = +20V VDS = 0.8 x Max Rating, VGS = 0V VGS = -12V, I D = -7A V TC = 25°C, IS = -11 VGS = 0V min. max. -100 -2.0 — — — — — -4.0 -100 100 -25 0.30 nA — -3.0 Table 2. High Dose Rate Ç 1011 Rads (Si)/sec 1012 Rads (Si)/sec Parameter VDSS Min. Typ Max. Min. Typ. Max. Units Test Conditions — — -80 — — -80 V Applied drain-to-source voltage during gamma-dot — -60 — — -60 — A Peak radiation induced photo-current — — -800 — — -160 A/µsec Rate of rise of photo-current 0.1 — — 0.5 — — µH Circuit inductance required to limit di/dt Drain-to-Source Voltage IPP di/dt L1 Table 3. Single Event Effects È Parameter Typ. Units Ion LET (Si) (MeV/mg/cm2) Fluence (ions/cm2) Range (µm) VDS Bias (V) VGS Bias (V) BV DSS -100 V Ni 28 1 x 105 ~41 -100 +5 To Order Previous Datasheet Index Next Data Sheet IRHN9130 Device Radiation Characteristics irradiation per MIL-STD-750, method 1019. À Repetitive Rating; Pulse width limited by Á Â Ã Ä Å maximum junction temperature. Refer to current HEXFET reliability report. @ VDD = -25V, Starting TJ = 25°C, EAS = [0.5 * L * (IL2) * [BV DSS/(BV DSS-VDD)] Peak IL = -11A, VGS = -12V, 25 ≤ RG ≤ 200Ω ISD ≤ -11A, di/dt ≤ -140A/µs, VDD ≤ BV DSS, TJ ≤ 150°C Suggested RG = 7.5Ω Pulse width ≤ 300 µs; Duty Cycle ≤ 2% K/W = °C/W W/K = W/°C Total Dose Irradiation with VGS Bias. -12 volt VGS applied and VDS = 0 during Æ Total Dose Irradiation with VDS Bias. VDS = 0.8 rated BVDSS (pre-radiation) applied and V GS = 0 during irradiation per MlL-STD-750, method 1019. Ç This test is performed using a flash x-ray source operated in the e-beam mode (energy~2.5 MeV), 30 nsec pulse. È Study sponsored by NASA. Evaluation performed at Brookhaven National Labs. É All Pre-Radiation and Post-Radiation test conditions are identical to facilitate direct comparison for circuit applications. Case Outline and Dimensions — SMD-1 Notes: 1. Dimensioning and Tolerancing per ANSI Y14.5M-1982 2. Controlling Dimension: Inch 3. Dimensions are shown in millimeters (Inches) 4 Dimension includes metallization flash 5 Dimension does not include metallization flash CAUTION BERYLLIA WARNING PER MIL-PRF-19500 Packages containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them which will produce beryllia or beryllium dust. Furthermore, beryllium oxides packages shall not be placed in acids that will produce fumes containing beryllium. 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