PD-93824E
IRHY57Z30CM
JANSR2N7482T3
30V, N-CHANNEL
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-257AA)
REF: MIL-PRF-19500/702
5
TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on)
IRHY57Z30CM 100K Rads (Si) 0.03Ω
IRHY53Z30CM 300K Rads (Si) 0.03Ω
ID
QPL Part Number
18A* JANSR2N7482T3
18A* JANSF2N7482T3
IRHY54Z30CM 500K Rads (Si)
0.03Ω
18A* JANSG2N7482T3
IRHF58Z30CM 1000K Rads (Si)
0.035Ω
18A* JANSH2N7482T3
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of
paralleling and temperature stability of electrical
parameters.
TO-257AA
Features:
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Ultra Low RDS(on)
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Package
Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
Units
Continuous Drain Current
Continuous Drain Current
18*
18*
IDM
PD @ TC = 25°C
Pulsed Drain Current À
Max. Power Dissipation
72
75
0.6
±20
W/°C
VGS
Linear Derating Factor
Gate-to-Source Voltage
EAS
IAR
EAR
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
177
18
7.5
mJ
A
mJ
dv/dt
TJ
Peak Diode Recovery dv/dt Â
Operating Junction
1.7
-55 to 150
V/ns
T STG
Storage Temperature Range
Lead Temperature
Weight
A
W
V
o
300 (0.063in./1.6mm from case for 10 sec)
4.3 (Typical)
C
g
* Current is limited by package
For footnotes refer to the last page
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1
04/25/06
IRHY57Z30CM, JANSR2N7482T3
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Min
Typ Max Units
Test Conditions
30
—
—
V
—
0.028
—
V/°C
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
—
—
0.03
Ω
VGS = 12V, ID = 18A
2.0
16
—
—
—
—
—
—
4.0
—
10
25
V
S( )
VDS = VGS, ID = 1.0mA
VDS ≥ 15V, IDS = 18A Ã
VDS= 24V ,VGS=0V
VDS = 24V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =12V, ID = 18A
VDS = 15V
Ω
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
∆BVDSS /∆T J Temperature Coefficient of Breakdown
Voltage
R DS(on)
Static Drain-to-Source On-State
Resistance
V GS(th)
Gate Threshold Voltage
g fs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
µA
IGSS
IGSS
Qg
Q gs
Q gd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.8
100
-100
65
20
10
25
100
35
30
—
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
2054
936
33
—
—
—
nA
nC
ns
nH
pF
Ã
VDD = 15V, ID = 18A,
VGS =12V, RG = 7.5Ω
Measured from drain lead (6mm/
0.25in. from package) to source
lead (6mm/0.25in. from package)
VGS = 0V, VDS = 25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
IS
ISM
VSD
trr
Q RR
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ton
Forward Turn-On Time
—
—
—
—
—
—
—
—
—
—
18*
72
1.2
102
193
Test Conditions
A
V
ns
nC
Tj = 25°C, IS = 18A, V GS = 0V Ã
Tj = 25°C, IF = 18A, di/dt ≤ 100A/µs
VDD ≤ 25V Ã
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
* Current is limited by package
Thermal Resistance
Parameter
R thJC
R thJA
Junction-to-Case
Junction-to-Ambient
Min Typ Max Units
—
—
—
—
1.67
80
Test Conditions
°C/W
Note: Corresponding Spice and Saber models are available on International Rectifier web site.
For footnotes refer to the last page
2
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Radiation Characteristics
IRHY57Z30CM, JANSR2N7482T3
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
BVDSS
V GS(th)
IGSS
IGSS
IDSS
RDS(on)
RDS(on)
VSD
Test Conditions
Up to 500K Rads(Si)1 1000K Rads (Si)2 Units
Min
Max
Min
Max
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source Ã
On-State Resistance (TO-3)
Static Drain-to-Source Ã
On-State Resistance (TO-257AA)
Diode Forward Voltage Ã
30
2.0
—
—
—
—
—
4.0
100
-100
10
0.025
30
1.5
—
—
—
—
—
4.0
100
-100
25
0.03
µA
Ω
VGS = 0V, ID = 1.0mA
VGS = VDS, I D = 1.0mA
V GS = 20V
VGS = -20 V
VDS=24V, VGS =0V
VGS = 12V, ID =18A
—
0.03
—
0.035
Ω
VGS = 12V, ID =18A
—
1.2
—
1.2
V
VGS = 0V, IS = 18A
V
nA
1. Part numbers IRHY57Z30CM (JANSR2N7482T3), IRHY53Z30CM (JANSF2N7482T3) and IRHY54Z30CM (JANSG2N7482T3)
2. Part number IRHY58Z30CM (JANSH2N7482T3)
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
VDS (V)
Range
(µm) @V GS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V
40
30
30
30
25
15
37
30
30
30
23
15
33
25
25
20
15
8
Energy
(MeV)
261
285
344
VDS
Cu
Br
I
LET
(MeV/(mg/cm2))
28
37
60
35
30
25
20
15
10
5
0
Cu
Br
I
0
-5
-10
-15
-20
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHY57Z30CM, JANSR2N7482T3
100
Pre-Irradiation
100
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
10
5.0V
5.0V
10
20µs PULSE WIDTH
TJ = 25 °C
1
0.1
1
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
TJ = 25 ° C
TJ = 150 ° C
10
V DS =15
15V
20µs PULSE WIDTH
8.0
9.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
4
10
Fig 2. Typical Output Characteristics
100
7.0
1
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
6.0
20µs PULSE WIDTH
TJ = 150 ° C
1
0.1
10
VDS , Drain-to-Source Voltage (V)
1
5.0
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
TOP
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
TOP
18A
ID = 22A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 12V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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Pre-Irradiation
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
C, Capacitance (pF)
3200
Coss
2400
Ciss
1600
800
20
VGS , Gate-to-Source Voltage (V)
4000
IRHY57Z30CM, JANSR2N7482T3
ID = 18A
22A
VDS = 24V
VDS = 15V
VDS = 6V
15
10
5
FOR TEST CIRCUIT
SEE FIGURE 13
Crss
0
1
10
0
100
0
10
VDS , Drain-to-Source Voltage (V)
30
40
50
60
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
1000
ID, Drain-to-Source Current (A)
ISD , Reverse Drain Current (A)
20
QG , Total Gate Charge (nC)
TJ = 150 ° C
100
TJ = 25 ° C
10
1
0.4
V GS = 0 V
0.8
1.2
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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OPERATION IN THIS AREA
LIMITED BY R DS(on)
1.6
100µs
10
1ms
Tc = 25°C
Tj = 150°C
Single Pulse
10ms
1
1
10
100
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
5
IRHY57Z30CM, JANSR2N7482T3
Pre-Irradiation
50
RD
VDS
LIMITED BY PACKAGE
VGS
ID , Drain Current (A)
40
D.U.T.
RG
+
- VDD
VGS
30
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
20
Fig 10a. Switching Time Test Circuit
VDS
10
90%
0
25
50
75
100
125
150
TC , Case Temperature ( ° C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
10%
VGS
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
1
D = 0.50
0.20
0.10
PDM
0.05
0.1
0.02
0.01
0.01
0.00001
t1
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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IRHY57Z30CM, JANSR2N7482T3
15V
L
VDS
D.U.T.
RG
IAS
VGS
20V
DRIVER
+
V
- DD
0.01Ω
tp
Fig 12a. Unclamped Inductive Test Circuit
A
EAS , Single Pulse Avalanche Energy (mJ)
Pre-Irradiation
400
ID
8.0A
11.4A
BOTTOM 18A
TOP
300
200
100
0
25
50
75
100
125
150
Starting T J, Junction Temperature ( °C)
V(BR)DSS
tp
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I AS
Current Regulator
Same Type as D.U.T.
Fig 12b. Unclamped Inductive Waveforms
50KΩ
QG
12V
.2µF
.3µF
12 V
QGS
QGD
+
V
- DS
VGS
VG
3mA
Charge
Fig 13a. Basic Gate Charge Waveform
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D.U.T.
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
7
IRHY57Z30CM, JANSR2N7482T3
Pre-Irradiation
Footnotes:
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Ä Total Dose Irradiation with VGS Bias.
À Repetitive Rating; Pulse width limited by
maximum junction temperature.
Á VDD = 15V, starting TJ = 25°C, L= 1.0mH
Peak IL = 18A, VGS = 12V
 ISD ≤ 18A, di/dt ≤ 54A/µs,
VDD ≤ 30V, TJ ≤ 150°C
12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Å Total Dose Irradiation with V DS Bias.
24 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions — TO-257AA
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PIN ASSIGNMENTS
1 = DRAIN
2 = SOURCE
3 = GATE
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 04/2006
8
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