IRF8714PbF-1 HEXFET® Power MOSFET VDS 30 RDS(on) max (@VGS = 10V) Qg (typical) ID (@TA = 25°C) V 8.7 mΩ 8.1 nC 14 A A A D S 1 8 S 2 7 D S 3 6 D G 4 5 D SO-8 Top View Applications l Control MOSFET of Sync-Buck Converters used for Notebook Processor Power l Control MOSFET for Isolated DC-DC Converters in Networking Systems Features Benefits Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Industrial qualification Base Part Number Package Type IRF8714PbF-1 SO-8 ⇒ Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Standard Pack Form Quantity Tube/Bulk 95 Tape and Reel 4000 Orderable Part Number IRF8714PbF-1 IRF8714TRPbF-1 Absolute Maximum Ratings Max. Units VDS Drain-to-Source Voltage Parameter 30 V VGS Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V ± 20 ID @ TA = 25°C 14 Continuous Drain Current, VGS @ 10V Pulsed Drain Current 110 PD @TA = 25°C Power Dissipation 2.5 PD @TA = 70°C Power Dissipation 1.6 TJ Linear Derating Factor Operating Junction and TSTG Storage Temperature Range ID @ TA = 70°C IDM 11 c A W W/°C °C 0.02 -55 to + 150 Thermal Resistance Parameter RθJL RθJA g Junction-to-Ambient fg Junction-to-Drain Lead Typ. Max. Units ––– 20 °C/W ––– 50 Notes through are on page 9 1 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback November 22, 2013 IRF8714PbF-1 Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS ΔΒVDSS/ΔTJ Min. Typ. Max. Units 30 ––– ––– Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance ––– ––– 0.021 7.1 ––– 8.7 Gate Threshold Voltage ––– 1.35 10.9 1.80 13 2.35 IDSS Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current ––– ––– -6.0 ––– ––– 1.0 IGSS Gate-to-Source Forward Leakage ––– ––– ––– ––– 150 100 nA VDS = 24V, VGS = 0V, TJ = 125°C VGS = 20V Gate-to-Source Reverse Leakage Forward Transconductance ––– 71 ––– ––– -100 ––– S VGS = -20V VDS = 15V, ID = 11A Total Gate Charge Pre-Vth Gate-to-Source Charge ––– ––– 8.1 1.9 12 ––– Post-Vth Gate-to-Source Charge Gate-to-Drain Charge ––– ––– 1.0 3.0 ––– ––– Qgodr Qsw Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) ––– ––– 2.2 4.0 ––– ––– Qoss Rg Output Charge Gate Resistance ––– ––– 4.8 1.6 ––– 2.6 td(on) tr Turn-On Delay Time Rise Time ––– ––– 10 9.9 ––– ––– td(off) tf Turn-Off Delay Time Fall Time ––– ––– 11 5.0 ––– ––– Ciss Coss Input Capacitance Output Capacitance ––– ––– 1020 220 ––– ––– Crss Reverse Transfer Capacitance ––– 110 ––– RDS(on) VGS(th) ΔVGS(th) gfs Qg Qgs1 Qgs2 Qgd V Conditions Drain-to-Source Breakdown Voltage VGS = 0V, ID = 250μA V/°C Reference to 25°C, ID = 1mA mΩ VGS = 10V, ID = 14A V e e VGS = 4.5V, ID = 11A VDS = VGS, ID = 25μA mV/°C VDS = VGS, ID = 25μA μA VDS = 24V, VGS = 0V VDS = 15V nC VGS = 4.5V ID = 11A See Figs. 15 & 16 nC Ω VDS = 16V, VGS = 0V VDD = 15V, VGS = 4.5V ID = 11A ns pF RG = 1.8Ω See Fig. 18 VGS = 0V VDS = 15V ƒ = 1.0MHz Avalanche Characteristics EAS Parameter Single Pulse Avalanche Energy IAR Avalanche Current c d Typ. ––– Max. 65 Units mJ ––– 11 A Diode Characteristics Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current ––– ––– 3.1 ISM (Body Diode) Pulsed Source Current ––– ––– 110 VSD (Body Diode) Diode Forward Voltage ––– ––– 1.0 V S p-n junction diode. TJ = 25°C, IS = 11A, VGS = 0V trr Qrr Reverse Recovery Time Reverse Recovery Charge ––– ––– 14 15 21 23 ns nC TJ = 25°C, IF = 11A, VDD = 15V di/dt = 300A/μs ton Forward Turn-On Time c 2 www.irf.com © 2013 International Rectifier MOSFET symbol A showing the integral reverse D G e e Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Submit Datasheet Feedback November 22, 2013 IRF8714PbF-1 1000 1000 ID, Drain-to-Source Current (A) 100 10 BOTTOM TOP ID, Drain-to-Source Current (A) TOP VGS 10V 5.0V 4.5V 3.5V 3.0V 2.7V 2.5V 2.3V 100 1 0.1 0.01 2.3V 10 1 2.3V ≤60μs PULSE WIDTH 0.001 1 10 0.1 100 1000 0.1 V DS, Drain-to-Source Voltage (V) 10 100 1000 Fig 2. Typical Output Characteristics 1000 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) 1 V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 T J = 150°C 10 T J = 25°C 1 VDS = 15V ≤60μs PULSE WIDTH 0.1 ID = 14A VGS = 10V 1.5 1.0 0.5 1 2 3 4 5 VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 3 ≤60μs PULSE WIDTH Tj = 150°C Tj = 25°C 0.1 BOTTOM VGS 10V 5.0V 4.5V 3.5V 3.0V 2.7V 2.5V 2.3V www.irf.com © 2013 International Rectifier 6 -60 -40 -20 0 20 40 60 80 100 120 140 160 T J , Junction Temperature (°C) Fig 4. Normalized On-Resistance vs. Temperature Submit Datasheet Feedback November 22, 2013 IRF8714PbF-1 10000 5.0 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd VGS, Gate-to-Source Voltage (V) ID= 11A C, Capacitance (pF) C oss = C ds + C gd Ciss 1000 Coss Crss 100 VDS= 24V VDS= 15V 4.0 3.0 2.0 1.0 10 0.0 1 10 100 0 VDS, Drain-to-Source Voltage (V) 6 8 10 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 4 QG, Total Gate Charge (nC) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 100 OPERATION IN THIS AREA LIMITED BY R DS(on) 100 T J = 150°C T J = 25°C 10 1 1msec 0.1 100μsec 10 10msec 1 T A = 25°C Tj = 150°C Single Pulse VGS = 0V 0.1 0.4 0.6 0.8 1.0 1.2 VSD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 2 www.irf.com © 2013 International Rectifier 1.4 0 1 10 VDS, Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area Submit Datasheet Feedback November 22, 2013 100 IRF8714PbF-1 2.5 VGS(th) , Gate Threshold Voltage (V) 14 ID, Drain Current (A) 12 10 8 6 4 2 0 2.0 ID = 25μA 1.5 1.0 25 50 75 100 125 150 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C ) T A , Ambient Temperature (°C) Fig 9. Maximum Drain Current vs. Ambient Temperature Fig 10. Threshold Voltage vs. Temperature Thermal Response ( Z thJA ) °C/W 100 D = 0.50 0.20 0.10 0.05 0.02 0.01 10 1 SINGLE PULSE ( THERMAL RESPONSE ) 0.1 τJ 0.01 R1 R1 τJ τ1 R2 R2 R3 R3 Ri (°C/W) R4 R4 τA τ1 τ2 τ2 τ3 τ3 τ4 τ4 Ci= τi/Ri Ci= τi/Ri 0.001 1E-006 1E-005 0.0001 0.001 τA 1.9778 τi (sec) 0.000165 7.4731 0.022044 26.2617 0.82275 14.2991 28.4 0.01 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + T A 0.1 1 10 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 5 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback November 22, 2013 100 IRF8714PbF-1 300 EAS , Single Pulse Avalanche Energy (mJ) RDS(on), Drain-to -Source On Resistance (m Ω) 25 ID = 14A 20 15 TJ = 125°C 10 T J = 25°C ID TOP 0.82A 1.0A BOTTOM 11A 250 200 150 100 50 5 0 3 4 5 6 7 8 9 10 11 12 25 50 75 100 125 150 Starting T J , Junction Temperature (°C) VGS, Gate -to -Source Voltage (V) Fig 13. Maximum Avalanche Energy vs. Drain Current Fig 12. On-Resistance vs. Gate Voltage V(BR)DSS tp 15V L VDS DUT DRIVER 0 D.U.T RG IAS 20V L tp 0.01Ω + - VDD 1K 20K VCC S A I AS Fig 15. Gate Charge Test Circuit Fig 14. Unclamped Inductive Test Circuit and Waveform Id Vds Vgs Vgs(th) Qgodr Qgd Qgs2 Qgs1 Fig 16. Gate Charge Waveform 6 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback November 22, 2013 IRF8714PbF-1 D.U.T Driver Gate Drive P.W. + + - - * D.U.T. ISD Waveform Reverse Recovery Current + RG • • • • dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test V DD P.W. Period VGS=10V Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer D= Period + - Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent ISD Ripple ≤ 5% * VGS = 5V for Logic Level Devices Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs V DS VGS RG RD VDS 90% D.U.T. + -V DD VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 18a. Switching Time Test Circuit 7 www.irf.com © 2013 International Rectifier 10% VGS td(on) tr td(off) tf Fig 18b. Switching Time Waveforms Submit Datasheet Feedback November 22, 2013 IRF8714PbF-1 SO-8 Package Outline Dimensions are shown in milimeters (inches) D DIM B 5 A 6 8 7 6 5 1 2 3 4 H E 6X 0.25 [.010] A e e1 8X b 0.25 [.010] A A1 INCH E S MIL L IME T E R S MIN MAX MIN A .0532 .0688 1.35 1.75 MAX A1 .0040 .0098 0.10 0.25 b .013 .020 0.33 0.51 c .0075 .0098 0.19 0.25 D .189 .1968 4.80 5.00 E .1497 .1574 3.80 4.00 e .050 B AS IC 1.27 B AS IC e1 .025 B AS IC 0.635 B AS IC H .2284 .2440 5.80 6.20 K .0099 .0196 0.25 0.50 L .016 .050 0.40 1.27 y 0° 8° 0° 8° K x 45° C y 0.10 [.004] 8X c 8X L 7 C A B FOOTPRINT 8X 0.72 [.028] NOTES : 1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994. 2. CONT ROLLING DIMENS ION: MILLIMET ER 3. DIMENS IONS ARE SHOWN IN MILLIMETERS [INCHES ]. 4. OUT LINE CONFORMS TO JEDEC OUT LINE MS -012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . MOLD PROTRUS IONS NOT T O EXCEED 0.15 [.006]. 6.46 [.255] 6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . MOLD PROTRUS IONS NOT T O EXCEED 0.25 [.010]. 7 DIMENS ION IS THE LENGT H OF LEAD FOR SOLDERING T O A S UBS TRAT E. 3X 1.27 [.050] 8X 1.78 [.070] SO-8 Part Marking Information E XAMPLE : T HIS IS AN IR F 7101 (MOS F E T ) INT E R NAT IONAL R E CT IF IE R LOGO XXXX F 7101 DAT E CODE (YWW) P = DIS GNAT E S LE AD - F R E E PR ODU CT (OPT IONAL) Y = L AS T DIGIT OF T H E YE AR WW = WE E K A = AS S E MB L Y S IT E CODE L OT CODE P AR T NU MB E R Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 8 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback November 22, 2013 IRF8714PbF-1 SO-8 Tape and Reel (Dimensions are shown in milimeters (inches)) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ † Qualification information Industrial Qualification level Moisture Sensitivity Level (per JEDE C JE S D47F SO-8 RoHS compliant †† guidelines) MS L1 †† (per JEDE C J-S T D-020D ) Yes † Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability †† Applicable version of JEDEC standard at the time of product release Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 1.1mH, RG = 25Ω, IAS = 11A. Pulse width ≤ 400μs; duty cycle ≤ 2%. When mounted on 1 inch square copper board. Rθ is measured at TJ of approximately 90°C. IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 9 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback November 22, 2013