2SC5049 Silicon NPN Epitaxial REJ03G0740-0300 (Previous ADE-208-1129A) Rev.3.00 Aug.10.2005 Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 10 GHz Typ • High gain, low noise figure PG = 15.0 dB Typ, NF = 1.2 dB Typ at f = 900 MHz Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 1. Emitter 2. Base 3. Collector 3 1 2 Note: Marking is “YA–”. Attention: This device is very sensitive to electro static discharge. It is recommended to adopt appropriate cautions when handling this transistor. Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Symbol VCBO Ratings 15 Unit V Collector to emitter voltage VCEO 8 V Emitter to base voltage VEBO 1.5 V IC PC 20 150 mA mW Tj Tstg 150 –55 to +150 °C °C Collector current Collector power dissipation Junction temperature Storage temperature Rev.3.00 Aug 10, 2005 page 1 of 4 2SC5049 Electrical Characteristics (Ta = 25°C) Item Collector cutoff current Emitter cutoff current DC current transfer ratio Collector output capacitance Gain bandwidth product Power gain Noise figure Rev.3.00 Aug 10, 2005 page 2 of 4 Symbol ICBO ICEO IEBO hFE Cob fT PG Min — — — 50 — 7.0 12.0 Typ — — — 120 0.45 10.0 15.0 Max 10 1 10 250 0.8 — — Unit µA mA µA pF GHz dB NF — 1.2 2.5 dB Test conditions VCB = 15 V, IE = 0 VCE = 8 V, RBE = ∞ VEB = 1.5 V, IC = 0 VCE = 5 V, IC = 20 mA VCB = 5 V, IE = 0, f = 1 MHz VCE = 5 V, IC = 10 mA VCE = 5 V, IC = 10 mA, f = 900 MHz VCE = 5 V, IC = 5 mA, f = 900 MHz 2SC5049 Main Characteristics DC Current Transfer Ratio vs. Collector Current DC Current Transfer Ratio hFE 150 100 50 50 Gain Bandwidth Product fT (GHz) 0 100 160 120 VCE = 5V 80 VCE = 1V 40 0.5 1 2 5 10 20 50 Ambient Temperature Ta (°C) Collector Current IC (mA) Gain Bandwidth Product vs. Collector Current Collector Output Capacitance vs. Collector to Base Voltage 12 VCE = 5 V 10 8 6 VCE = 1 V 4 2 0 1 200 0 0.1 0.2 150 2 5 10 20 50 Collector Output Capacitance Cob (pF) Collector Power Dissipation PC (mW) Maximum Collector Dissipation Curve 0.56 IE = 0 f = 1 MHz 0.52 0.48 0.44 0.40 0.36 0.5 2 1 5 10 20 Collector Current IC (mA) Collector to Base Voltage VCB (V) Power Gain vs. Collector Current Noise Figure vs. Collector Current 5 20 16 Noise Figure NF (dB) Power Gain PG (dB) f = 900 MHz VCE = 5V 12 VCE = 1V 8 f = 900 MHz 4 3 VCE = 5V 2 1 4 VCE = 1V 0 0 0.3 1 3 10 Collector Current IC (mA) Rev.3.00 Aug 10, 2005 page 3 of 4 30 0.3 1 3 10 Collector Current IC (mA) 30 2SC5049 Package Dimensions JEITA Package Code RENESAS Code Package Name MPAK(T) / MPAK(T)V, MPAK / MPAKV PLSP0003ZB-A SC-59A D MASS[Typ.] 0.011g A Q e E HE L A c LP L1 Reference Symbol A3 A x M S b A e A2 A e1 A1 S b b1 c1 I1 c b2 A-A Section Pattern of terminal position areas A A1 A2 A3 b b1 c c1 D E e HE L L1 LP x b2 e1 I1 Q Dimension in Millimeters Min 1.0 0 1.0 0.35 0.1 2.7 1.35 2.2 0.35 0.15 0.25 Nom 1.1 0.25 0.42 0.4 0.13 0.11 1.5 0.95 2.8 Max 1.3 0.1 1.2 0.5 0.15 3.1 1.65 3.0 0.75 0.55 0.65 0.05 0.55 1.95 1.05 0.3 Ordering Information Part Name 2SC5049YA-TL-E Quantity 3000 Shipping Container φ 178 mm Reel, 8 mm Emboss Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.3.00 Aug 10, 2005 page 4 of 4 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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