2SC5594 Silicon NPN Epitaxial High Frequency Low Noise Amplifier REJ03G0749-0200 (Previous ADE-208-798) Rev.2.00 Aug.10.2005 Features • High gain bandwidth product fT = 24 GHz typ. • High power gain and low noise figure ; PG = 18 dB typ. , NF = 1.2 dB typ. at f = 1.8 GHz Outline RENESAS Package code: PTSP0004ZA-A (Package name: CMPAK-4) 2 3 1. Emitter 2. Collector 3. Emitter 4. Base 1 4 Note: Marking is “XP-”. Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Rev.2.00 Aug 10, 2005 page 1 of 7 Symbol VCBO VCEO VEBO IC Pc Tj Tstg Ratings 12 4.5 0.8 35 100 150 –55 to +150 Unit V V V mA mW °C °C 2SC5594 Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector cutoff current Symbol V(BR)CBO ICBO Min 12 — Typ — — Max — 1 Unit V µA ICEO IEBO hFE Cob — — 60 — — — 100 0.3 1 12 140 0.6 µA µA VCE = 4 V , RBE = ∞ VEB = 0.8 V , IC = 0 VCE = 2 V , IC = 20 mA pF VCB = 2 V , IE = 0 f = 1 MHz fT 21 24 — GHz VCE = 2 V , IC = 30 mA f = 2 GHz Power gain PG 14 18 — dB VCE = 2 V, IC = 30 mA f = 1.8 GHz Noise figure NF — 1.2 1.6 dB VCE = 2 V, IC = 5 mA f = 1.8 GHz Collector cutoff current Emitter cutoff current DC current transfer ratio Collector output capacitance Gain bandwidth product Rev.2.00 Aug 10, 2005 page 2 of 7 Test Conditions IC = 10 µA , IE = 0 VCB = 10 V , IE = 0 2SC5594 Main Characteristics DC Current Transfer Ratio vs. Collector Current 200 hFE 200 DC Current Transfer Ratio 150 100 50 0 50 100 150 Ambient Temperature 0 1 Ta (°C) (GHz) IE = 0 f = 1MHz 0.6 0.4 0.2 0 0.1 0.2 0.5 1 2 5 Collector to Base Voltage 10 100 IC (mA) VCE = 3 V 2V 1V 30 20 10 0 1 2 5 10 Collector Current 20 50 100 IC (mA) Noise Figure vs. Collector Current 5 VCE = 3 V 2V f = 1.8GHz VCE = 1 to 3 V NF (dB) 16 1V 12 Noise Figure PG (dB) 50 20 40 Power Gain vs. Collector Current Power Gain 10 50 VCB (V) 20 8 4 0 1 5 Gain Bandwidth Product vs. Collector Current fT (pF) Cob 0.8 2 Collector Current Collector Output Capacitance vs. Collector to Base Voltage 1.0 Collector Output Capacitance VCE = 3 V 2V 1V 100 200 Gain Bandwidth Product Collector Power Dissipation Pc (mW) Maximum Collector Dissipation Curve f = 1.8GHz 4 3 2 1 0 2 5 10 Collector Current Rev.2.00 Aug 10, 2005 page 3 of 7 20 50 IC (mA) 100 1 2 5 10 Collector Current 20 IC 50 (mA) 100 2SC5594 S 21 Parameter vs. Collector Current 20 S21 Parameter |S21| 2 (dB) f = 2GHz 16 VCE = 3 V 2V 1V 12 8 4 0 1 2 5 10 20 Collector Current Rev.2.00 Aug 10, 2005 page 4 of 7 50 IC 100 (mA) 2SC5594 S21 Parameter vs. Frequency S11 Parameter vs. Frequency .8 1 .6 90° 1.5 Scale: 10 / div. 60° 120° 2 .4 3 30° 150° 4 5 .2 10 .2 0 .4 .6 .8 1 1.5 2 3 45 10 180° 0° −10 −5 −4 −.2 −3 −.4 −30° −150° −2 −.6 −.8 −1 −60° −120° −1.5 −90° Condition ; V CE = 2 V , I C = 20 mA Condition ; V CE = 2 V , I C = 20 mA 100 to 2000 MHz (100 MHz step) 100 to 2000 MHz (100 MHz step) S12 Parameter vs. Frequency S22 Parameter vs. Frequency 90° Scale: 0.02 / div. .8 60° 120° 1 .6 1.5 2 .4 3 30° 150° 4 5 .2 10 180° 0° .2 0 .4 .6 .8 1 1.5 2 3 45 10 −10 −5 −4 −.2 −30° −150° −3 −.4 −120° −60° −90° Condition ; V CE = 2 V , I C = 20 mA 100 to 2000 MHz (100 MHz step) Rev.2.00 Aug 10, 2005 page 5 of 7 −2 −.6 −.8 −1 −1.5 Condition ; V CE = 2 V , I C = 20 mA 100 to 2000 MHz (100 MHz step) 2SC5594 Sparameter (VCE = 2 V, IC = 20 mA, Zo = 50 Ω) S11 S21 S12 S22 f (MHz) 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 MAG 0.577 0.560 0.541 0.504 0.495 0.477 0.458 0.456 0.448 0.435 0.438 0.430 0.425 0.426 0.424 0.425 ANG –24.5 –49.8 –72.2 –90.2 –104.5 –116.9 –126.4 –134.5 –142.5 –147.9 –153.6 –158.5 –162.6 –166.9 –171.1 –174.1 MAG 40.31 36.64 32.05 27.56 23.84 20.64 18.11 16.13 14.46 13.15 12.01 11.06 10.24 9.56 8.99 8.45 ANG 164.2 149.3 136.3 126.5 118.8 113.1 108.4 105.1 101.6 99.2 96.6 94.4 93.0 91.1 89.6 88.0 MAG 0.00674 0.0130 0.0182 0.0225 0.0256 0.0285 0.0311 0.0336 0.0355 0.0382 0.0399 0.0422 0.0443 0.0462 0.0488 0.0508 ANG 82.9 74.5 68.8 63.6 61.3 58.9 57.7 57.3 57.8 56.8 57.4 57.0 58.1 58.3 58.3 58.5 MAG 0.963 0.897 0.803 0.708 0.622 0.548 0.487 0.437 0.394 0.360 0.331 0.306 0.288 0.269 0.253 0.241 ANG –11.5 –23.7 –34.4 –42.4 –48.4 –53.1 –56.2 –58.7 –60.4 –61.9 –63.0 –63.3 –63.5 –64.0 –64.1 –64.1 1700 1800 1900 2000 0.428 0.424 0.426 0.428 –177.4 179.7 176.6 174.7 7.98 7.59 7.19 6.84 86.6 85.0 83.8 82.4 0.0527 0.0556 0.0578 0.0595 58.8 58.8 59.0 58.8 0.230 0.220 0.212 0.204 –64.0 –64.0 –63.9 –63.7 Rev.2.00 Aug 10, 2005 page 6 of 7 2SC5594 Package Dimensions JEITA Package Code RENESAS Code SC-82A Package Name PTSP0004ZA-A CMPAK-4(T) / CMPAK-4(T)V D MASS[Typ.] 0.006g A e2 e Q b1 c B B E HE LP Reference Symbol L A A x M L1 S A e2 A2 e l1 b5 S b c A A1 y S b2 A3 b e1 b1 b3 c1 c1 c A-A Section l1 b4 B-B Section Pattern of terminal position areas A A1 A2 A3 b b1 b2 b3 c c1 D E e e2 HE L L1 LP x y b4 b5 e1 l1 Q Dimension in Millimeters Min 0.8 0 0.8 0.25 0.35 0.1 1.8 1.15 1.8 0.3 0.1 0.2 Nom 0.9 0.25 0.32 0.42 0.3 0.4 0.13 0.11 2.0 1.25 0.65 0.6 2.1 Max 1.1 0.1 1.0 0.4 0.5 0.15 2.2 1.35 2.4 0.7 0.5 0.6 0.05 0.05 0.45 0.55 1.5 0.9 0.2 Ordering Information Part Name 2SC5594XP-TL-E Quantity 3000 Shipping Container φ 178 mm Reel, 8 mm Emboss Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Aug 10, 2005 page 7 of 7 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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