RENESAS 2SC5080

2SC5080
Silicon NPN Epitaxial
REJ03G0742-0300
(Previous ADE-208-1132A)
Rev.3.00
Aug.10.2005
Application
VHF / UHF wide band amplifier
Features
• High gain bandwidth product
fT = 13.5 GHz Typ
• High gain, low noise figure
PG = 18 dB Typ, NF = 1.1 dB Typ at f = 900 MHz
Outline
RENESAS Package code: PLSP0004ZA-A
(Package name: MPAK-4)
2
1. Collector
2. Emitter
3. Base
4. Emitter
3
1
4
Note:
Marking is “ZD–”.
Attention: This device is very sensitive to electro static discharge.
It is recommended to adopt appropriate cautions when handling this transistor.
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Symbol
VCBO
Ratings
15
Unit
V
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
VCEO
VEBO
IC
PC
8
1.5
50
150
V
V
mA
mW
Junction temperature
Storage temperature
Tj
Tstg
150
–55 to +150
°C
°C
Rev.3.00 Aug 10, 2005 page 1 of 7
2SC5080
Electrical Characteristics
(Ta = 25°C)
Item
Collector to base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector output capacitance
Gain bandwidth product
Power gain
Noise figure
Rev.3.00 Aug 10, 2005 page 2 of 7
Symbol
V(BR)CBO
ICBO
ICEO
IEBO
hFE
Cob
fT
PG
Min
15
—
—
—
50
—
10.5
15
Typ
—
—
—
—
90
0.4
13.5
18
Max
—
1
1
10
160
0.75
—
—
Unit
V
µA
mA
µA
pF
GHz
dB
NF
—
1.1
2.0
dB
Test conditions
IC = 10 µA, IE = 0
VCB = 12 V, IE = 0
VCE = 8 V, RBE = ∞
VEB = 1.5 V, IC = 0
VCE = 5 V, IC = 20 mA
VCB = 5 V, IE = 0, f = 1 MHz
VCE = 5 V, IC = 20 mA
VCE = 5 V, IC = 20 mA,
f = 900 MHz
VCE = 5 V, IC = 5 mA,
f = 900 MHz
2SC5080
Main Characteristics
DC Current Transfer Ratio vs.
Collector Current
200
DC Current Transfer Ratio hFE
150
100
50
50
Gain Bandwidth Product fT (GHz)
0
100
150
160
120
80
40
100
10
Collector Current IC (mA)
Gain Bandwidth Product vs.
Collector Current
Collector Output Capacitance vs.
Collector to Base Voltage
16
VCE = 5V
12
VCE = 1V
8
4
0
2
5
10
20
50
5
IE = 0
f = 1 MHz
2
1
0.5
0.2
0.1
0.1 0.2
Collector Current IC (mA)
0.5
1
2
5
10
20
Collector to Base Voltage VCB (V)
Noise Figure vs. Collector Current
Power Gain vs. Collector Current
20
5
NF (dB)
f = 900 MHz
VCE = 5V
16
f = 2 GHz
12
Noise Figure
Power Gain PG (dB)
1
Ambient Temperature Ta (°C)
20
1
VCE = 5V
0
0.1
Collector Output Capacitance Cob (pF)
Collector Power Dissipation PC (mW)
Maximum Collector Dissipation Curve
8
4
VCE = 5V
4
3
2
f = 2GHz
1
f = 900MHz
0
0
1
2
5
10
20
Collector Current IC (mA)
Rev.3.00 Aug 10, 2005 page 3 of 7
50
1
2
5
10
20
Collector Current IC (mA)
50
2SC5080
S21 Parameter vs. Collector Current
VCE = 1V
|S 21 | (dB)
20
16
12
2
f = 1 GHz
f = 2 GHz
S 21 parameter
S 21 parameter
2
|S 21 | (dB)
S21 Parameter vs. Collector Current
8
4
0
20
f = 1 GHz
VCE = 5V
16
f = 2 GHz
12
8
4
0
1
2
5
10
Collector Current
Rev.3.00 Aug 10, 2005 page 4 of 7
20
IC (mA)
50
1
2
5
10
Collector Current
20
IC (mA)
50
2SC5080
S21 Parameter vs. Frequency
S11 Parameter vs. Frequency
.8
1
90°
1.5
.6
Scale: 5 / div.
60°
120°
2
.4
3
30°
150°
4
5
.2
10
.2
0
.4
.6 .8 1
1.5 2
3 45
10
180°
0°
–10
–5
–4
–.2
–30°
–150°
–3
–.4
–2
–.6
–.8
–1
–90°
Condition: V CE = 5 V , Zo = 50 Ω
200 to 2000 MHz (200 MHz step)
(I C = 5 mA)
(I C = 20 mA)
Condition: V CE = 5 V , Zo = 50 Ω
200 to 2000 MHz (200 MHz step)
(I C = 5 mA)
(I C = 20 mA)
S12 Parameter vs. Frequency
90°
S22 Parameter vs. Frequency
Scale: 0.04 / div.
.8
60°
120°
–60°
–120°
–1.5
1
.6
1.5
2
.4
3
30°
150°
4
5
.2
10
180°
0°
.2
0
.4
.6 .8 1
1.5 2
3 45
10
–10
–5
–4
–.2
–30°
–150°
–3
–.4
–60°
–120°
–90°
Condition: V CE = 5 V , Zo = 50 Ω
200 to 2000 MHz (200 MHz step)
(I C = 5 mA)
(I C = 20 mA)
Rev.3.00 Aug 10, 2005 page 5 of 7
–2
–.6
–.8
–1
–1.5
Condition: V CE = 5 V , Zo = 50 Ω
200 to 2000 MHz (200 MHz step)
(I C = 5 mA)
(I C = 20 mA)
2SC5080
S Parameters
(VCE = 5 V, IC = 5 mA, ZO = 50 Ω)
Freq.
(MHz)
200
400
600
800
1000
1200
1400
1600
1800
2000
S11
MAG.
0.798
0.699
0.592
0.532
0.465
0.432
0.401
0.390
0.373
0.373
S21
ANG.
–30.8
–60.8
–83.0
–99.9
–114.5
–128.2
–139.6
–150.2
–160.5
–168.3
MAG.
11.47
9.88
8.35
7.03
6.02
5.23
4.58
4.14
3.76
3.42
S12
ANG.
157.3
139.6
126.1
115.7
107.6
101.0
95.2
90.7
86.4
82.6
MAG.
0.0329
0.0570
0.0718
0.0817
0.0891
0.0939
0.0993
0.103
0.108
0.112
S22
ANG.
73.0
60.8
53.0
48.0
45.4
44.6
44.1
44.8
45.1
46.5
MAG.
0.936
0.820
0.703
0.607
0.532
0.478
0.440
0.405
0.382
0.362
ANG.
–20.0
–35.1
–46.0
–54.0
–59.8
–64.3
–67.7
–71.6
–74.7
–77.9
S Parameters
(VCE = 5 V, IC = 20 mA, ZO = 50 Ω)
Freq.
(MHz)
200
400
600
800
1000
1200
1400
1600
1800
2000
S11
MAG.
0.588
0.482
0.419
0.389
0.366
0.365
0.354
0.356
0.361
0.365
S21
ANG.
–53.1
–89.8
–115.9
–134.1
–149.7
–161.9
–171.4
–179.7
172.7
165.3
Rev.3.00 Aug 10, 2005 page 6 of 7
MAG.
21.24
15.59
11.75
9.29
7.64
6.47
5.63
4.98
4.48
4.06
S12
ANG.
144.3
123.6
111.0
102.4
96.5
91.4
97.1
83.5
79.9
77.0
MAG.
0.0275
0.0423
0.0507
0.0581
0.0652
0.0726
0.0806
0.0877
0.0959
0.105
S22
ANG.
66.3
56.6
53.9
54.5
55.8
57.3
58.7
60.4
61.2
62.4
MAG.
0.826
0.619
0.480
0.395
0.337
0.300
0.274
0.255
0.242
0.232
ANG.
–31.8
–49.8
–58.7
–63.8
–67.6
–70.1
–72.8
–74.6
–77.1
–79.9
2SC5080
Package Dimensions
JEITA Package Code
RENESAS Code
SC-61AA
Package Name
PLSP0004ZA-A
MASS[Typ.]
MPAK-4 / MPAK-4V
D
0.013g
A
e
e2
b1
Q
c
B
B
E
HE
Reference
Symbol
L
A
LP
L1
A
A3
x M S
b
A
e2
A2
e
I1
A
b5
S
b
b2
e1
A1
y S
b1
b3
c1
c
c1
I1
c
b4
A-A Section
B-B Section
Pattern of terminal position areas
A
A1
A2
A3
b
b1
b2
b3
c
c1
D
E
e
e2
HE
L
L1
LP
x
y
b4
b5
e1
I1
Q
Dimension in Millimeters
Min
1.0
0
1.0
0.35
0.55
0.1
2.7
1.35
2.2
0.35
0.15
0.25
Nom
1.1
0.25
0.42
0.62
0.4
0.6
0.13
0.11
1.5
0.95
0.85
2.8
Max
1.3
0.1
1.2
0.5
0.7
0.15
3.1
1.65
3.0
0.75
0.55
0.65
0.05
0.05
0.55
0.75
1.95
1.05
0.3
Ordering Information
Part Name
2SC5080ZD-TL-E
Quantity
3000
Shipping Container
φ 178 mm Reel, 8 mm Emboss Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.3.00 Aug 10, 2005 page 7 of 7
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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Colophon .3.0