2SC5080 Silicon NPN Epitaxial REJ03G0742-0300 (Previous ADE-208-1132A) Rev.3.00 Aug.10.2005 Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 13.5 GHz Typ • High gain, low noise figure PG = 18 dB Typ, NF = 1.1 dB Typ at f = 900 MHz Outline RENESAS Package code: PLSP0004ZA-A (Package name: MPAK-4) 2 1. Collector 2. Emitter 3. Base 4. Emitter 3 1 4 Note: Marking is “ZD–”. Attention: This device is very sensitive to electro static discharge. It is recommended to adopt appropriate cautions when handling this transistor. Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Symbol VCBO Ratings 15 Unit V Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation VCEO VEBO IC PC 8 1.5 50 150 V V mA mW Junction temperature Storage temperature Tj Tstg 150 –55 to +150 °C °C Rev.3.00 Aug 10, 2005 page 1 of 7 2SC5080 Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector output capacitance Gain bandwidth product Power gain Noise figure Rev.3.00 Aug 10, 2005 page 2 of 7 Symbol V(BR)CBO ICBO ICEO IEBO hFE Cob fT PG Min 15 — — — 50 — 10.5 15 Typ — — — — 90 0.4 13.5 18 Max — 1 1 10 160 0.75 — — Unit V µA mA µA pF GHz dB NF — 1.1 2.0 dB Test conditions IC = 10 µA, IE = 0 VCB = 12 V, IE = 0 VCE = 8 V, RBE = ∞ VEB = 1.5 V, IC = 0 VCE = 5 V, IC = 20 mA VCB = 5 V, IE = 0, f = 1 MHz VCE = 5 V, IC = 20 mA VCE = 5 V, IC = 20 mA, f = 900 MHz VCE = 5 V, IC = 5 mA, f = 900 MHz 2SC5080 Main Characteristics DC Current Transfer Ratio vs. Collector Current 200 DC Current Transfer Ratio hFE 150 100 50 50 Gain Bandwidth Product fT (GHz) 0 100 150 160 120 80 40 100 10 Collector Current IC (mA) Gain Bandwidth Product vs. Collector Current Collector Output Capacitance vs. Collector to Base Voltage 16 VCE = 5V 12 VCE = 1V 8 4 0 2 5 10 20 50 5 IE = 0 f = 1 MHz 2 1 0.5 0.2 0.1 0.1 0.2 Collector Current IC (mA) 0.5 1 2 5 10 20 Collector to Base Voltage VCB (V) Noise Figure vs. Collector Current Power Gain vs. Collector Current 20 5 NF (dB) f = 900 MHz VCE = 5V 16 f = 2 GHz 12 Noise Figure Power Gain PG (dB) 1 Ambient Temperature Ta (°C) 20 1 VCE = 5V 0 0.1 Collector Output Capacitance Cob (pF) Collector Power Dissipation PC (mW) Maximum Collector Dissipation Curve 8 4 VCE = 5V 4 3 2 f = 2GHz 1 f = 900MHz 0 0 1 2 5 10 20 Collector Current IC (mA) Rev.3.00 Aug 10, 2005 page 3 of 7 50 1 2 5 10 20 Collector Current IC (mA) 50 2SC5080 S21 Parameter vs. Collector Current VCE = 1V |S 21 | (dB) 20 16 12 2 f = 1 GHz f = 2 GHz S 21 parameter S 21 parameter 2 |S 21 | (dB) S21 Parameter vs. Collector Current 8 4 0 20 f = 1 GHz VCE = 5V 16 f = 2 GHz 12 8 4 0 1 2 5 10 Collector Current Rev.3.00 Aug 10, 2005 page 4 of 7 20 IC (mA) 50 1 2 5 10 Collector Current 20 IC (mA) 50 2SC5080 S21 Parameter vs. Frequency S11 Parameter vs. Frequency .8 1 90° 1.5 .6 Scale: 5 / div. 60° 120° 2 .4 3 30° 150° 4 5 .2 10 .2 0 .4 .6 .8 1 1.5 2 3 45 10 180° 0° –10 –5 –4 –.2 –30° –150° –3 –.4 –2 –.6 –.8 –1 –90° Condition: V CE = 5 V , Zo = 50 Ω 200 to 2000 MHz (200 MHz step) (I C = 5 mA) (I C = 20 mA) Condition: V CE = 5 V , Zo = 50 Ω 200 to 2000 MHz (200 MHz step) (I C = 5 mA) (I C = 20 mA) S12 Parameter vs. Frequency 90° S22 Parameter vs. Frequency Scale: 0.04 / div. .8 60° 120° –60° –120° –1.5 1 .6 1.5 2 .4 3 30° 150° 4 5 .2 10 180° 0° .2 0 .4 .6 .8 1 1.5 2 3 45 10 –10 –5 –4 –.2 –30° –150° –3 –.4 –60° –120° –90° Condition: V CE = 5 V , Zo = 50 Ω 200 to 2000 MHz (200 MHz step) (I C = 5 mA) (I C = 20 mA) Rev.3.00 Aug 10, 2005 page 5 of 7 –2 –.6 –.8 –1 –1.5 Condition: V CE = 5 V , Zo = 50 Ω 200 to 2000 MHz (200 MHz step) (I C = 5 mA) (I C = 20 mA) 2SC5080 S Parameters (VCE = 5 V, IC = 5 mA, ZO = 50 Ω) Freq. (MHz) 200 400 600 800 1000 1200 1400 1600 1800 2000 S11 MAG. 0.798 0.699 0.592 0.532 0.465 0.432 0.401 0.390 0.373 0.373 S21 ANG. –30.8 –60.8 –83.0 –99.9 –114.5 –128.2 –139.6 –150.2 –160.5 –168.3 MAG. 11.47 9.88 8.35 7.03 6.02 5.23 4.58 4.14 3.76 3.42 S12 ANG. 157.3 139.6 126.1 115.7 107.6 101.0 95.2 90.7 86.4 82.6 MAG. 0.0329 0.0570 0.0718 0.0817 0.0891 0.0939 0.0993 0.103 0.108 0.112 S22 ANG. 73.0 60.8 53.0 48.0 45.4 44.6 44.1 44.8 45.1 46.5 MAG. 0.936 0.820 0.703 0.607 0.532 0.478 0.440 0.405 0.382 0.362 ANG. –20.0 –35.1 –46.0 –54.0 –59.8 –64.3 –67.7 –71.6 –74.7 –77.9 S Parameters (VCE = 5 V, IC = 20 mA, ZO = 50 Ω) Freq. (MHz) 200 400 600 800 1000 1200 1400 1600 1800 2000 S11 MAG. 0.588 0.482 0.419 0.389 0.366 0.365 0.354 0.356 0.361 0.365 S21 ANG. –53.1 –89.8 –115.9 –134.1 –149.7 –161.9 –171.4 –179.7 172.7 165.3 Rev.3.00 Aug 10, 2005 page 6 of 7 MAG. 21.24 15.59 11.75 9.29 7.64 6.47 5.63 4.98 4.48 4.06 S12 ANG. 144.3 123.6 111.0 102.4 96.5 91.4 97.1 83.5 79.9 77.0 MAG. 0.0275 0.0423 0.0507 0.0581 0.0652 0.0726 0.0806 0.0877 0.0959 0.105 S22 ANG. 66.3 56.6 53.9 54.5 55.8 57.3 58.7 60.4 61.2 62.4 MAG. 0.826 0.619 0.480 0.395 0.337 0.300 0.274 0.255 0.242 0.232 ANG. –31.8 –49.8 –58.7 –63.8 –67.6 –70.1 –72.8 –74.6 –77.1 –79.9 2SC5080 Package Dimensions JEITA Package Code RENESAS Code SC-61AA Package Name PLSP0004ZA-A MASS[Typ.] MPAK-4 / MPAK-4V D 0.013g A e e2 b1 Q c B B E HE Reference Symbol L A LP L1 A A3 x M S b A e2 A2 e I1 A b5 S b b2 e1 A1 y S b1 b3 c1 c c1 I1 c b4 A-A Section B-B Section Pattern of terminal position areas A A1 A2 A3 b b1 b2 b3 c c1 D E e e2 HE L L1 LP x y b4 b5 e1 I1 Q Dimension in Millimeters Min 1.0 0 1.0 0.35 0.55 0.1 2.7 1.35 2.2 0.35 0.15 0.25 Nom 1.1 0.25 0.42 0.62 0.4 0.6 0.13 0.11 1.5 0.95 0.85 2.8 Max 1.3 0.1 1.2 0.5 0.7 0.15 3.1 1.65 3.0 0.75 0.55 0.65 0.05 0.05 0.55 0.75 1.95 1.05 0.3 Ordering Information Part Name 2SC5080ZD-TL-E Quantity 3000 Shipping Container φ 178 mm Reel, 8 mm Emboss Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.3.00 Aug 10, 2005 page 7 of 7 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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