General Purpose Transistors NPN Silicon FEATURE LMBT3904TT1G ƽSimplifies Circuit Design. ƽ We declare that the material of product compliance with RoHS requirements. ORDERING INFORMATION 3 Device Marking Shipping LMBT3904TT1G MA 3000/Tape&Reel LMBT3904TT3G MA 10000/Tape&Reel 1 2 MAXIMUM RATINGS Rating SC-89 Symbol Value Unit Collector–Emitter Voltage V CEO 40 Vdc Collector–Base Voltage V CBO 60 Vdc Emitter–Base Voltage V EBO 6.0 Vdc 200 mAdc Collector Current — Continuous IC 3 COLLECTOR 1 BASE THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 4 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation FR-4 Board(2), TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol Max Unit PD 200 mW RθJA PD 1.6 600 300 mW/°C °C/W mW RθJA TJ , Tstg 2.4 400 –55 to +150 mW/°C °C/W °C 2 EMITTER DEVICE MARKING LMBT3904TT1G = AM ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min Max Unit Collector–Emitter Breakdown Voltage(3) V (BR)CEO 40 — Vdc (I C = 1.0 mAdc) Collector–Base Breakdown Voltage V (BR)CBO 60 — Vdc V (BR)EBO 6.0 — Vdc I BL — 50 nAdc I CEX — 50 nAdc OFF CHARACTERISTICS (I C = 10 µAdc) Emitter–Base Breakdown Voltage (I E = 10 µAdc) Base Cutoff Current ( V CE= 30 Vdc, V EB = 3.0 Vdc, ) Collector Cutoff Current ( V CE = 30Vdc, V BE = 3.0Vdc ) 1. FR-4 Minimum Pad. 2. FR-4 1.0 x 1.0 Inch Pad. 3. Pulse Test: Pulse Width <300 µs, Duty Cycle <2.0%. 1/7 LMBT3904TT1G ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit 40 70 100 60 30 –– –– 300 –– –– –– –– 0.2 0.3 0.65 –– 0.85 0.95 fT 200 –– MHz C obo –– 4.0 pF C ibo –– 8.0 pF h ie 1.0 10 pF h re 0.5 8.0 X10 –4 h fe 100 400 — h oe 1.0 40 θmhos NF — 5.0 dB td tr ts tf — — — — 35 35 200 50 ON CHARACTERISTICS (3) DC Current Gain(1) (I C =0.1 mAdc, V CE =1.0 Vdc) (I C = 1.0 mAdc, V CE = 1.0 Vdc) (I C = 10 mAdc, V CE = 1.0 Vdc) (I C = 50mAdc, V CE = 1.0Vdc) (I C = 100mAdc, V CE =1.0 Vdc) Collector–Emitter Saturation Voltage (I C = 10 mAdc, I B = 1.0 mAdc)(3) (I C = 50 mAdc, I B = 5.0mAdc) Base–Emitter Saturation Voltage(3) (I C = 10 mAdc, I B = 1.0mAdc) (I C = 50mAdc, I B = 5.0mAdc ) hFE –– VCE(sat) Vdc V BE(sat) Vdc SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product (I C = 10mAdc, V CE= 20Vdc, f = 100MHz) Output Capacitance (V CB = 5.0Vdc, I E = 0, f = 1.0 MHz) Input Capacitance (V BE = 0.5Vdc, I C = 0, f = 1.0 MHz) Input Impedancen (V CE = 10Vdc, I C = 1.0mAdc, f = 1.0 kHz) Voltage Feedback Ratio (V CE = 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) Small–Signal Current Gain (V CE = 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) Output Admittance (V CE = 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) Noise Figure (V CE = 5.0 Vdc, I C = 100µAdc, R S = 1.0 k Ω, f = 1.0 kHz) SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time (V CC = 3.0 Vdc,V BE = 0.5Vdc I C = 10 mAdc, I B1 = 1.0mAdc) (V CC = 3.0Vdc, I C = 10 mAdc,I B1 = I B2 = 1.0mAdc) ns ns 3. Pulse Test: Pulse Width <300 µs, Duty Cycle <2.0%. 2/7 LMBT3904TT1G DUTY CYCLE = 2% 300 ns +3 V +10.9 V 275 +10.9 V DUTY CYCLE = 2% 10 k -ā0.5 V +3 V t1 10 < t1 < 500 ms 275 10 k 0 CS < 4 pF* < 1 ns CS < 4 pF* 1N91k -ā9.1 V < 1 ns * Total shunt capacitance of test jig and connectors Figure 1. Delay and Rise Time Equivalent Test Circuit Figure 2. Storage and Fall Time Equivalent Test Circuit 10 5000 Q, CHARGE (pC) CAPACITANCE (pF) 2000 5.0 Cibo 3.0 Cobo 2.0 1.0 0.1 VCC = 40 V IC/IB = 10 3000 7.0 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 40 1000 700 500 QT 300 200 100 70 50 QA 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 REVERSE BIAS VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA) Figure 3. Capacitance Figure 4. Charge Data 3/7 200 LMBT3904TT1G 500 500 I C /I B = 10 300 200 V CC = 40 V 100 70 t r, RISE TIME (ns) 300 200 t r @ V CC = 3.0 V TIME (ns) 50 30 20 40 V 15 V 10 7 5 2.0 V t d @ V OB = 0 V 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 100 70 50 30 20 10 7 5 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 5. Turn–On Time Figure 6. Rise Time 500 200 500 t ’s = t s –1 /8 tf 300 200 I C /I B =20 I C /I B =10 V CC = 40 V I B1 = I B2 300 200 I B1 = I B2 I C /I B = 20 100 70 t f, , FALL TIME (ns) t ’s , STORAGE TIME (ns) I C /I B = 10 I C /I B =20 50 I C /I B =10 30 20 10 7 5 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 100 70 50 30 20 I C /I B = 10 10 7 5 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 7. Storage Time Figure 8. Fall Time 200 TYPICAL AUDIO SMALL–SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS (V CE = 5.0 Vdc, T A = 25°C, Bandwidth = 1.0 Hz) 14 12 f = 1.0 kHz SOURCE RESISTANCE=200Ω NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 12 I C = 1.0 mA 10 SOURCE RESISTANCE =200Ω 8 I C = 0.5 mA 6 SOURCE RESISTANCE =1.0k I C = 50µA 4 2 SOURCE RESISTANCE=500Ω I C = 100 µA 0 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100 I C = 1.0 mA I C = 0.5 mA 10 I C = 50 µA 8 I C = 100 µA 6 4 2 0 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 f, FREQUENCY (kHz) R S , SOURCE RESISTANCE (kΩ) Figure 9. Figure 10. 4/7 100 LMBT3904TT1G h PARAMETERS (V CE = 10 Vdc, f = 1.0 kHz, T A = 25°C) hfe, CURRENT 200 100 70 50 30 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 hie, INPUT IMPEDANCE (kΩ) 20 10 5 2 1 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 11. Current Gain Figure 12. Output Admittance 20 10 5.0 2.0 1.0 0.5 0.2 0.1 50 h re, VOLTAGE FEEDBACK RATIO (X 10–4 ) 0.1 hoe, OUTPUT ADMITTANCE ( mhos) 100 300 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.1 10 0.2 0.3 0.5 1.0 2.0 3.0 5.0 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 13. Input Impedance Figure 14. Voltage Feedback Ratio 10 h FE, DC CURRENT GAIN (NORMALIZED) TYPICAL STATIC CHARACTERISTICS 2.0 T J = +125°C 1.0 V CE = 1.0 V +25°C 0.7 –55°C 0.5 0.3 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 I C , COLLECTOR CURRENT (mA) Figure 15. DC Current Gain 5/7 V CE, COLLECTOR EMITTER VOLTAGE (VOLTS) LMBT3904TT1G 1.0 T J = 25°C 0.8 I C = 1.0 mA 10 mA 30 mA 100 mA 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 I B , BASE CURRENT (mA) Figure 16. Collector Saturation Region 1.0 1.2 T J = 25°C V BE(sat) @ I C /I B =10 0.5 COEFFICIENT(mV/°C) V, VOLTAGE (VOLTS) 1.0 0.8 V BE @ V CE =1.0 V 0.6 0.4 V CE(sat) @ I C /I B =10 0.2 0 1.0 +25°C TO +125°C θ VC FOR V CE(sat) 0 –55°C TO +25°C –0.5 +25°C TO +125°C –1.0 –55°C TO +25°C –1.5 θ VB FOR V BE(sat) –2.0 2.0 3.0 5.0 10 20 50 100 200 0 20 40 60 80 100 120 140 160 180 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 17. “ON” Voltages Figure 18. Temperature Coefficients 6/7 200 LMBT3904TT1G SC-89 A -X- 3 1 2 B -Y- NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 463C-01 OBSOLETE, NEW STANDARD 463C-02. S K G 2 PL D 0.08 (0.003) M DIM A B C D G H J K L M N S 3 PL X Y N M C J -T- H MILLIMETERS MIN NOM MAX 1.50 1.60 1.70 0.75 0.85 0.95 0.60 0.70 0.80 0.23 0.28 0.33 0.50 BSC 0.53 REF 0.10 0.15 0.20 0.30 0.40 0.50 1.10 REF ----10 _ ----10 _ 1.50 1.60 1.70 MIN 0.059 0.030 0.024 0.009 0.004 0.012 ----0.059 INCHES NOM 0.063 0.034 0.028 0.011 0.020 BSC 0.021 REF 0.006 0.016 0.043 REF ----0.063 MAX 0.067 0.040 0.031 0.013 0.008 0.020 10 _ 10 _ 0.067 SEATING PLANE H L G RECOMMENDED PATTERN OF SOLDER PADS 7/7