LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors NPN/PNP Duals (Complimentary) LBC846BPDW1T1G LBC847BPDW1T1G LBC847CPDW1T1G LBC848BPDW1T1G LBC848CPDW1T1G These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications. We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. ORDERING INFORMATION Device Marking LBC846BPDW1T1G LBC846BPDW1T3G LBC847BPDW1T1G LBC847BPDW1T3G LBC847CPDW1T1G S-LBC846BPDW1T1G S-LBC846BPDW1T3G S-LBC847BPDW1T1G S-LBC847BPDW1T3G S-LBC847CPDW1T1G LBC847CPDW1T3G S-LBC847CPDW1T3G LBC848BPDW1T1G S-LBC848BPDW1T1G LBC848BPDW1T3G S-LBC848BPDW1T3G LBC848CPDW1T1G S-LBC848CPDW1T1G LBC848CPDW1T3G S-LBC848CPDW1T3G Shipping BB BB BF BF BG BG BK BK BL BL 5 4 10000 Units/Reel 3000 Units/Reel 10000 Units/Reel 3000 Units/Reel 1 2 3 10000 Units/Reel 3000 Units/Reel SOT-363/SC-88 CASE 419B STYLE 1 10000 Units/Reel 3000 Units/Reel 3 2 Q1 Symbol 1 10000 Units/Reel LBC846 LBC847 LBC848 Q2 Unit Collector-Emitter Voltage VCEO 65 45 30 V Collector-Base Voltage VCBO 80 50 30 V Emitter-Base Voltage VEBO 6.0 6.0 5.0 V IC 100 100 100 mAdc Collector Current Ð Continuous 6 3000 Units/Reel MAXIMUM RATINGS - NPN Rating S-LBC846BPDW1T1G S-LBC847BPDW1T1G S-LBC847CPDW1T1G S-LBC848BPDW1T1G S-LBC848CPDW1T1G 4 5 6 DEVICE MARKING MAXIMUM RATINGS - PNP Rating Symbol LBC846 LBC847 LBC848 Unit Collector-Emitter Voltage VCEO -65 -45 -30 V Collector-Base Voltage VCBO -80 -50 -30 V Emitter-Base Voltage VEBO -5.0 -5.0 -5.0 V IC -100 -100 -100 mAdc Collector Current Ð Continuous See Table THERMAL CHARACTERISTICS Characteristic Symbol Max Unit PD 380 250 mW 3.0 mW/˚C Thermal Resistance, Junction to Ambient RθJA 328 ˚C/W Junction and Storage Temperature Range TJ, Tstg -55 to +150 Total Device Dissipation Per Device FR-5 Board (1) TA = 25˚C Derate Above 25˚C ˚C 1. FR-5 = 1.0 x 0.75 x 0.062 in Rev.O 1/9 LESHAN RADIO COMPANY, LTD. LBC846BPDW1T1G LBC847BPDW1T1G Series, LBC848BPDW1T1G Series S-LBC846BPDW1T1G S-LBC847BPDW1T1G Series, S-LBC848BPDW1T1G Series ELECTRICAL CHARACTERISTICS (NPN) (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max 65 45 30 — — — — — — 80 50 30 — — — — — — 80 50 30 — — — — — — 6.0 6.0 5.0 — — — — — — — — — — 15 5.0 Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 10 mA) Collector–Emitter Breakdown Voltage (IC = 10 µA, VEB = 0) Collector–Base Breakdown Voltage (IC = 10 A) Emitter–Base Breakdown Voltage (IE = 1.0 A) V(BR)CEO LBC846 Series LBC847 Series LBC848 Series V V(BR)CES LBC846 Series LBC847B Only LBC848 Series V V(BR)CBO LBC846 Series LBC847 Series LBC848 Series V V(BR)EBO LBC846 Series LBC847 Series LBC848 Series Collector Cutoff Current (VCB = 30 V) (VCB = 30 V, TA = 150°C) ICBO V nA µA ON CHARACTERISTICS DC Current Gain (IC = 2.0 mA, VCE = 5.0 V) hFE — LBC846B, LBC847B, LBC848B 200 290 475 LBC847C, LBC848C 420 520 800 Collector–Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) Collector–Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) VCE(sat) — — — — 0.25 0.6 V Base–Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) Base–Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) VBE(sat) — — 0.7 0.9 — — V Base–Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V) Base–Emitter Voltage (IC = 10 mA, VCE = 5.0 V) VBE(on) 580 — 660 — 700 770 mV fT 100 — — MHz Cobo — — 4.5 pF — — 10 SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product (IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 V, f = 1.0 MHz) Noise Figure (IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz) NF dB Rev.O 2/9 LESHAN RADIO COMPANY, LTD. LBC846BPDW1T1G LBC847BPDW1T1G Series, LBC848BPDW1T1G Series S-LBC846BPDW1T1G S-LBC847BPDW1T1G Series, S-LBC848BPDW1T1G Series ELECTRICAL CHARACTERISTICS (PNP) (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit –65 –45 –30 — — — — — — –80 –50 –30 — — — — — — –80 –50 –30 — — — — — — –5.0 –5.0 –5.0 — — — — — — — — — — –15 –4.0 LBC846B, LBC847B, LBC848B LBC847C, LBC848C — — 150 270 — — LBC846B, LBC847B, LBC848B LBC847C, LBC848C 200 420 290 520 475 800 — — — — –0.3 –0.65 — — –0.7 –0.9 — — –0.6 — — — –0.75 –0.82 fT 100 — — MHz Output Capacitance (VCB = –10 V, f = 1.0 MHz) Cob — — 4.5 pF Noise Figure (IC = –0.2 mA, VCE = –5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz) NF — — 10 dB OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = –10 mA) Collector–Emitter Breakdown Voltage (IC = –10 µA, VEB = 0) Collector–Base Breakdown Voltage (IC = –10 A) Emitter–Base Breakdown Voltage (IE = –1.0 A) V(BR)CEO LBC846 Series LBC847 Series LBC848 Series V V(BR)CES LBC846 Series LBC847 Series LBC848 Series V V(BR)CBO LBC846 Series LBC847 Series LBC848 Series V V(BR)EBO LBC846 Series LBC847 Series LBC848 Series Collector Cutoff Current (VCB = –30 V) Collector Cutoff Current (VCB = –30 V, TA = 150°C) ICBO V nA µA ON CHARACTERISTICS DC Current Gain (IC = –10 µA, VCE = –5.0 V) (IC = –2.0 mA, VCE = –5.0 V) hFE Collector–Emitter Saturation Voltage (IC = –10 mA, IB = –0.5 mA) (IC = –100 mA, IB = –5.0 mA) VCE(sat) Base–Emitter Saturation Voltage (IC = –10 mA, IB = –0.5 mA) (IC = –100 mA, IB = –5.0 mA) VBE(sat) Base–Emitter On Voltage (IC = –2.0 mA, VCE = –5.0 V) (IC = –10 mA, VCE = –5.0 V) VBE(on) — V V V SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product (IC = –10 mA, VCE = –5.0 Vdc, f = 100 MHz) Rev.O 3/9 LESHAN RADIO COMPANY, LTD. LBC846BPDW1T1G LBC847BPDW1T1G Series, LBC848BPDW1T1G Series S-LBC846BPDW1T1G S-LBC847BPDW1T1G Series, S-LBC848BPDW1T1G Series TYPICAL NPN CHARACTERISTICS – LBC846 TA = 25°C VCE = 5 V TA = 25°C 0.8 V, VOLTAGE (VOLTS) hFE , DC CURRENT GAIN (NORMALIZED) 1.0 2.0 1.0 0.5 VBE(sat) @ IC/IB = 10 0.6 VBE @ VCE = 5.0 V 0.4 0.2 0.2 VCE(sat) @ IC/IB = 10 0 10 100 1.0 IC, COLLECTOR CURRENT (mA) 0.1 0.2 0.2 0.5 1.0 2.0 TA = 25°C 1.6 50 mA 100 mA 200 mA 1.2 IC = 10 mA 0.8 0.4 0 0.02 0.05 0.1 1.0 2.0 0.2 0.5 IB, BASE CURRENT (mA) 5.0 10 20 f, T CURRENT-GAIN - BANDWIDTH PRODUCT C, CAPACITANCE (pF) TA = 25°C Cib 10 6.0 2.0 Cob 0.1 0.2 0.5 5.0 1.0 2.0 10 20 VR, REVERSE VOLTAGE (VOLTS) Figure 5. Capacitance 20 50 100 200 50 100 200 -1.4 -1.8 50 θVB for VBE -55°C to 125°C -2.2 -2.6 -3.0 0.2 0.5 10 20 1.0 2.0 5.0 IC, COLLECTOR CURRENT (mA) Figure 4. Base–Emitter Temperature Coefficient 40 4.0 10 -1.0 Figure 3. Collector Saturation Region 20 5.0 Figure 2. “On” Voltage θVB, TEMPERATURE COEFFICIENT (mV/ °C) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 1. DC Current Gain 20 mA 2.0 IC, COLLECTOR CURRENT (mA) 100 500 VCE = 5 V TA = 25°C 200 100 50 20 1.0 5.0 10 50 100 IC, COLLECTOR CURRENT (mA) Figure 6. Current–Gain – Bandwidth Product Rev.O 4/9 LESHAN RADIO COMPANY, LTD. LBC846BPDW1T1G LBC847BPDW1T1G Series, LBC848BPDW1T1G Series S-LBC846BPDW1T1G S-LBC847BPDW1T1G Series, S-LBC848BPDW1T1G Series TYPICAL PNP CHARACTERISTICS — LB C846 TJ = 25°C VCE = -5.0 V TA = 25°C -0.8 V, VOLTAGE (VOLTS) hFE , DC CURRENT GAIN (NORMALIZED) -1.0 2.0 1.0 0.5 VBE(sat) @ IC/IB = 10 -0.6 VBE @ VCE = -5.0 V -0.4 -0.2 0.2 VCE(sat) @ IC/IB = 10 0 -0.2 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 IC, COLLECTOR CURRENT (AMP) -0.1 -0.2 -0.5 -50 -100 -200 -1.0 -2.0 -5.0 -10 -20 IC, COLLECTOR CURRENT (mA) Figure 8. “On” Voltage -2.0 -1.6 -1.2 IC = -10 mA -20 mA -50 mA -100 mA -200 mA -0.8 -0.4 TJ = 25°C 0 -0.02 -0.05 -0.1 -0.2 -0.5 -1.0 -2.0 IB, BASE CURRENT (mA) -5.0 -10 θVB, TEMPERATURE COEFFICIENT (mV/ °C) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 7. DC Current Gain -20 -1.0 -1.4 -1.8 -2.6 -3.0 -0.2 Cib 10 8.0 6.0 Cob 4.0 2.0 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 VR, REVERSE VOLTAGE (VOLTS) Figure 11. Capacitance -50 -100 -0.5 -1.0 -50 -5.0 -10 -20 -2.0 IC, COLLECTOR CURRENT (mA) -100 -200 Figure 10. Base–Emitter Temperature Coefficient f, T CURRENT-GAIN - BANDWIDTH PRODUCT C, CAPACITANCE (pF) 20 TJ = 25°C -55°C to 125°C -2.2 Figure 9. Collector Saturation Region 40 θVB for VBE 500 VCE = -5.0 V 200 100 50 20 -100 -1.0 -10 IC, COLLECTOR CURRENT (mA) Figure 12. Current–Gain – Bandwidth Product Rev.O 5/9 LESHAN RADIO COMPANY, LTD. LBC846BPDW1T1G LBC847BPDW1T1G Series, LBC848BPDW1T1G Series S-LBC846BPDW1T1G S-LBC847BPDW1T1G Series, S-LBC848BPDW1T1G Series TYPICAL NPN CHARACTERISTICS – LBC847 SERIES & LBC848 SERIES 1.0 VCE = 10 V TA = 25°C 1.5 TA = 25°C 0.9 0.8 1.0 V, VOLTAGE (VOLTS) hFE , NORMALIZED DC CURRENT GAIN 2.0 0.8 0.6 0.4 VBE(sat) @ IC/IB = 10 0.7 VBE(on) @ VCE = 10 V 0.6 0.5 0.4 0.3 0.2 0.3 VCE(sat) @ IC/IB = 10 0.1 0.2 0.2 0.5 50 1.0 2.0 20 5.0 10 IC, COLLECTOR CURRENT (mAdc) 100 0 0.1 200 0.2 0.3 0.5 0.7 1.0 2.0 TA = 25°C 1.6 IC = 200 mA IC = IC = IC = 50 mA 10 mA 20 mA 0.8 IC = 100 mA 0.4 0 0.02 10 0.1 1.0 IB, BASE CURRENT (mA) 20 -55°C to +125°C 1.2 1.6 2.0 2.4 2.8 0.2 Cib Cob 2.0 4.0 6.0 8.0 10 2.0 VR, REVERSE VOLTAGE (VOLTS) Figure 17. Capacitances 20 40 f, T CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) C, CAPACITANCE (pF) TA = 25°C 0.4 0.6 0.8 1.0 10 100 Figure 16. Base–Emitter Temperature Coefficient 3.0 1.0 1.0 IC, COLLECTOR CURRENT (mA) 10 5.0 50 70 100 1.0 Figure 15. Collector Saturation Region 7.0 20 30 Figure 14. “Saturation” and “On” Voltages θVB, TEMPERATURE COEFFICIENT (mV/ °C) VCE , COLLECTOR-EMITTER VOLTAGE (V) Figure 13. Normalized DC Current Gain 1.2 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (mAdc) 400 300 200 VCE = 10 V TA = 25°C 100 80 60 40 30 20 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mAdc) 30 Figure 18. Current–Gain – Bandwidth Product Rev.O 6/9 50 LESHAN RADIO COMPANY, LTD. LBC846BPDW1T1G LBC847BPDW1T1G Series, LBC848BPDW1T1G Series S-LBC846BPDW1T1G S-LBC847BPDW1T1G Series, S-LBC848BPDW1T1G Series TYPICAL PNP CHARACTERISTICS — LBC847 SERIES & LBC848 SERIES 1.5 -1.0 TA = 25°C -0.9 VCE = -10 V TA = 25°C -0.8 1.0 V, VOLTAGE (VOLTS) hFE , NORMALIZED DC CURRENT GAIN 2.0 0.7 0.5 -0.7 VBE(on) @ VCE = -10 V -0.6 -0.5 -0.4 -0.3 -0.2 0.3 VCE(sat) @ IC/IB = 10 -0.1 0.2 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 IC, COLLECTOR CURRENT (mAdc) 0 -0.1 -0.2 -100 -200 TA = 25°C -100 -1.6 -1.2 IC = -10 mA IC = -50 mA IC = -200 mA IC = -100 mA IC = -20 mA -0.4 -0.02 -55°C to +125°C 1.2 1.6 2.0 2.4 2.8 -10 -20 -0.1 -1.0 IB, BASE CURRENT (mA) -0.2 10 Cib 7.0 TA = 25°C 5.0 Cob 3.0 2.0 1.0 -0.4 -0.6 -1.0 -2.0 -4.0 -6.0 -10 -20 -30 -40 -10 -1.0 IC, COLLECTOR CURRENT (mA) -100 Figure 22. Base–Emitter Temperature Coefficient f, T CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) Figure 21. Collector Saturation Region C, CAPACITANCE (pF) -50 1.0 -2.0 0 -0.5 -1.0 -2.0 -5.0 -10 -20 IC, COLLECTOR CURRENT (mAdc) Figure 20. “Saturation” and “On” Voltages θVB , TEMPERATURE COEFFICIENT (mV/ °C) VCE , COLLECTOR-EMITTER VOLTAGE (V) Figure 19. Normalized DC Current Gain -0.8 VBE(sat) @ IC/IB = 10 400 300 200 150 VCE = -10 V TA = 25°C 100 80 60 40 30 20 -0.5 -1.0 -2.0 -3.0 -5.0 -10 -20 -30 -50 VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mAdc) Figure 23. Capacitances Figure 24. Current–Gain – Bandwidth Product Rev.O 7/9 LESHAN RADIO COMPANY, LTD. LBC846BPDW1T1G LBC847BPDW1T1G Series, LBC848BPDW1T1G Series S-LBC846BPDW1T1G S-LBC847BPDW1T1G Series, S-LBC848BPDW1T1G Series r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.001 ZJA(t) = r(t) RJA RJA = 328C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) – TC = P(pk) RJC(t) P(pk) t1 0.01 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0 1.0 10 100 1.0k 10k 100k t, TIME (ms) Figure 25. Thermal Response Rev.O 8/9 1.0M LESHAN RADIO COMPANY, LTD. LBC846BPDW1T1G LBC847BPDW1T1G Series, LBC848BPDW1T1G Series S-LBC846BPDW1T1G S-LBC847BPDW1T1G Series, S-LBC848BPDW1T1G Series SC-88/SOT-363 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. A G DIM 6 5 4 - B- S 1 2 3 0.2 (0.008) M B M D6PL N J A B C D G H J K N S INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC --0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC --0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 C K H PIN 1. EMITTER 2 2. BASE 2 3. COLLECTOR 1 4.EMITTER 1 5. BASE 1 6.COLLECTOR 2 0.4 mm (min) 0.65 mm 0.65 mm 0.5 mm (min) 1.9 mm Rev.O 9/9