LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diode Common Anode LBAW56LT1G S-LBAW56LT1G FEATURES • We declare that the material of product compliance with RoHS requirements. • S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 3 ORDERING INFORMATION 1 Device MARKING Shipping LBAW56LT1G S-LBAW56LT1G A1 3000 Tape & Reel LBAW56LT3G S-LBAW56LT3G A1 10000 Tape & Reel 2 SOT– 23 (TO–236AB) MAXIMUM RATINGS (EACH DIODE) Rating Reverse Voltage Forward Current Peak Forward Surge Current Symbol VR IF I FM(surge) Value 70 200 500 Unit Vdc mAdc mAdc Symbol PD Max 225 Unit mW R θJA PD 1.8 556 300 mW /°C °C/W mW 1 CATHODE 3 ANODE 2 CATHODE THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board (1) T A = 25 °C erate above 25 °C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) T A = 25 °C Derate above 25 °C Thermal Resistance, Junction to Ambient Junction and Storage Temperature R θJA T J , T stg 2.4 mW /°C 417 °C/W -55 to +150 °C ELECTRICAL CHARACTERISTICS (T A = 25 °C unless otherwise noted) (EACH DIODE) Characteristic Symbol Min Max Unit V (BR) 70 – Vdc – – – – 30 2.5 50 2.0 – – – – – 715 855 1000 1250 6.0 OFF CHARACTERISTICS Reverse Breakdown Voltage (I (BR) = 100 µAdc) Reverse Voltage Leakage Current (V R = 25 Vdc, T J = 150 °C) (V R = 70 Vdc) (V R = 70 Vdc, T J = 150 °C) Diode Capacitance (V R = 0, f = 1.0 MHz) Forward Voltage (I F = 1.0 mAdc) (I F = 10 mAdc) (I F = 50 mAdc) (I F = 150 mAdc) Reverse Recovery Time (I F = I R = 10 mAdc, I R(REC) = 1.0 mAdc) (Figure 1) R L = 100Ω 1. FR-5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. IR µAdc C D V F t rr pF mVdc ns Rev.O 1/3 LESHAN RADIO COMPANY, LTD. LBAW56LT1G,S-LBAW56LT1G 820 Ω +10 V 2k 0.1 µF 100 µH tp tr IF 0.1 µF IF t trr 10% t DUT 50 Ω OUTPUT PULSE GENERATOR 50 Ω INPUT SAMPLING OSCILLOSCOPE 90% iR(REC) = 1.0 mA IR VR OUTPUT PULSE (IF = IR = 10 mA; measured at iR(REC) = 1.0 mA) INPUT SIGNAL Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit CURVES APPLICABLE TO EACH CATHODE 100 10 I R , REVERSE CURRENT (µA) T A = 85°C 10 T A = – 40°C 1.0 T A = 25°C 0.1 T A = 125°C 1.0 T A = 85°C 0.1 T A = 55°C 0.01 T A = 25°C 0.001 0.2 0.4 0.6 0.8 1.0 0 1.2 10 20 30 40 V R , REVERSE VOLTAGE (VOLTS) V F , FORWARD VOLTAGE (VOLTS) Figure 3. Leakage Current Figure 2. Forward Voltage 1.75 C D ,DIODE CAPACITANCE (pF) I F , FORWARD CURRENT (mA) T A = 150°C 1.5 1.25 1.0 0.75 0 2 4 6 8 V R , REVERSE VOLTAGE (VOLTS) Figure 4. Capacitance Rev.O 2/3 50 LESHAN RADIO COMPANY, LTD. LBAW56LT1G,S-LBAW56LT1G SOT-23 Dimension Outline: NOTES: A 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. L 3 1 V 2 B S DIM G A B C D G H J K L S V C D H K J INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 Soldering Footprint: 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm Rev.O 3/3