LBAW56WT1G

LESHAN RADIO COMPANY, LTD.
Dual Switching Diodes
LBAW56WT1G
S-LBAW56WT1G
Features
•
We declare that the material of product compliance with
RoHS requirements.
•
S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
3
1
2
SC–70
ORDERING INFORMATION
Device
Marking
LBAW56WT1G
S-LBAW56WT1G
A1
3000/Tape&Reel
LBAW56WT3G
S-LBAW56WT3G
A1
10000/Tape&Reel
CATHODE
2
CATHODE
1
Shipping
3
ANODE
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Max
Unit
Reverse Voltag
VR
Forward Current
Peak Forward Surge Current
IF
70
200
500
Vdc
mAdc
mAdc
IFM(surge)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR–5 Board(1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate(2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
Max
200
Unit
mW
RθJA
PD
1.6
0.625
300
mW/°C
°C/W
mW
RθJA
TJ, Tstg
2.4
417
–55 to +150
mW/°C
°C/W
°C
Symbol
Min
Max
Unit
V(BR)
70
—
Vdc
—
—
—
—
30
2.5
50
2.0
—
—
—
—
—
715
855
1000
1250
6.0
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I(BR) = 100 µAdc)
Reverse Voltage Leakage Current
(VR = 25 Vdc, TJ = 150°C)
(VR = 70 Vdc)
(VR = 70 Vdc, TJ = 150°C)
Diode Capacitance
(VR = 0, f = 1.0 MHz)
Forward Voltage
(IF = 1.0 mAdc)
(IF = 10 mAdc)
(IF = 60 mAdc)
(IF = 150 mAdc)
Reverse Recovery Time
(IF = IR = 10 mAdc, RL = 100 Ω, IR(REC) = 1.0 mAdc) (Figure 1)
1. FR–5 = 1.0 × 0.75 × 0.062 in.
2. Alumina = 0.4 × 0.3 × 0.024 in. 99.5% alumina.
µAdc
IR
CD
VF
trr
pF
mVdc
ns
Rev.O 1/3
LESHAN RADIO COMPANY, LTD.
LBAW56WT1G,S-LBAW56WT1G
+10 V
2.0 k
820 Ω
100 µH
IF
0.1 µF
tp
tr
0.1µF
IF
t
t
10%
90%
D.U.T.
50 Ω INPUT
SAMPLING
OSCILLOSCOPE
50 Ω OUTPUT
PULSE
GENERATOR
t
rr
i R(REC) = 1.0 mA
IR
V R INPUT SIGNAL
OUTPUT PULSE
(I F = I R = 10 mA; MEASURED
at i R(REC) = 1.0 mA)
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (I F ) of 10mA.
Notes: 2. Input pulse is adjusted so I R(peak) is equal to 10mA.
Notes: 3. t p » t rr
Figure 1. Recovery Time Equivalent Test Circuit
10
IR , REVERSE CURRENT (µA)
10
1.0
0.1
1.0
0.1
0.01
0.001
0.2
0.4
0.6
0.8
1.0
0
1.2
10
20
30
40
VF , FORWARD VOLTAGE (VOLTS)
VR , REVERSE VOLTAGE (VOLTS)
Figure 2. Forward Voltage
Figure 3. Leakage Current
50
1.75
CD DIODE CAPACITANCE (pF)
IF , FORWARD CURRENT (mA)
100
1.5
1.25
1.0
0.75
0
2
4
6
8
VR , REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitance
Rev.O 2/3
LESHAN RADIO COMPANY, LTD.
LBAW56WT1G,S-LBAW56WT1G
SC−70
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
e1
3
E
HE
1
2
b
e
A
0.05 (0.002)
c
A2
DIM
A
A1
A2
b
c
D
E
e
e1
L
HE
MIN
0.80
0.00
0.30
0.10
1.80
1.15
1.20
2.00
MILLIMETERS
NOM
MAX
0.90
1.00
0.05
0.10
0.7 REF
0.35
0.40
0.18
0.25
2.10
2.20
1.24
1.35
1.30
1.40
0.65 BSC
0.425 REF
2.10
2.40
SOLDERING FOOTPRINT*
0.65
0.025
0.016
0.010
0.087
0.053
0.055
0.095
1
XX
M
1.9
0.075
= Specific Device Code
= Date Code
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ ”,
may or may not be present.
0.9
0.035
SCALE 10:1
0.079
MAX
0.040
0.004
XXM
0.65
0.025
0.7
0.028
0.012
0.004
0.071
0.045
0.047
INCHES
NOM
0.035
0.002
0.028 REF
0.014
0.007
0.083
0.049
0.051
0.026 BSC
0.017 REF
0.083
GENERIC
MARKING DIAGRAM
L
A1
MIN
0.032
0.000
mm inches
Rev.O 3/3