L2N7002FDW1T1G

LESHAN RADIO COMPANY, LTD.
Small Signal MOSFET
30 Volts
L2N7002FDW1T1G
S-L2N7002FDW1T1G
N–Channel SC–88
•
We declare that the material of product are Halogen Free and
compliance with RoHS requirements.
•
S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
FEATURES
● RDS(ON) ≦8Ω@VGS=4V
● RDS(ON) ≦13Ω@VGS=2.5V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current
Simplified Schematic
capability
● Capable doing Cu wire bonding
● ESD Protected:1000V
3
2
1
D2
G1
S1
S2
G2
D1
4
5
6
APPLICATIONS
● Power Management in Note book
● Portable Equipment
● Battery Powered System
● Load Switch
ORDERING INFORMATION
Device
(Top View)
Marking
Shipping
L2N7002FDW1T1G
S-L2N7002FDW1T1G
72F
3000 Tape & Reel
L2N7002FDW1T3G
S-L2N7002FDW1T3G
72F
10000 Tape & Reel
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
PD
225
1.8
mW
mW/°C
Thermal Resistance, Junction to Ambient
RθJA
556
°C/W
Total Device Dissipation
Alumina Substrate,(Note 2.) TA = 25°C
Derate above 25°C
PD
300
mW
mW/°C
Thermal Resistance, Junction to Ambient
RθJA
417
°C/W
TJ, Tstg
-55 to
+150
°C
Total Device Dissipation FR–5 Board
(Note 1.) TA = 25°C
Derate above 25°C
Junction and Storage Temperature
2.4
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina.
Rev .O 1/4
LESHAN RADIO COMPANY, LTD.
L2N7002FDW1T1G,S-L2N7002FDW1T1G
Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted)
Symbol
Maximum Ratings
Unit
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
±20
V
Parameter
Electrical Characteristics (Tj =25℃ Unless Otherwise Specified)
Symbol
Parameter
Limit
Min
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250μA
30
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250μA
0.8
IGSS
Gate-Body Leakage
IDSS
Zero Gate Voltage Drain Current
RDS(ON)
Drain-Source On-Resistance*
VSD
Diode Forward Voltage *
Typ
Max
Unit
STATIC
V
1.5
V
VDS=0V, VGS=±20V
±10
μA
VDS=30V, VGS=0V
1
μA
VGS=4V, ID=10mA
5
8
VGS=2.5V, ID=1mA
7
13
IS=200mA, VGS=0V
1.2
Ω
V
DYNAMIC
Qg
Total Gate Charge
4.9
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
0.6
Ciss
Input Capacitance
21
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
VDD=5V, RL =500Ω
7.3
td(off)
Turn-Off Delay Time
VGES=5V,RG=10Ω
31.3
tf
Turn-Off Fall Time
VDS=25V, VGS=10V, ID=0.22A
VDS=25V, VGS=0V, f=1MHz
nC
2.1
pF
10
2
10.1
ns
28.2
Notes: * . Pulse test; pulse width ≦ 300us, duty cycle≦ 2%.
Rev .O 2/4
LESHAN RADIO COMPANY, LTD.
L2N7002FDW1T1G,S-L2N7002FDW1T1G
Typical Characteristics (TJ =25℃ Noted)
Rev .O 3/4
LESHAN RADIO COMPANY, LTD.
L2N7002FDW1T1G,S-L2N7002FDW1T1G
Typical Characteristics (TJ =25℃ Noted)
Rev .O 4/5
LESHAN RADIO COMPANY, LTD.
L2N7002FDW1T1G,S-L2N7002FDW1T1G
SC−88 (SOT−363)
CASE 419B−02
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 419B−01 OBSOLETE, NEW STANDARD 419B−02.
G
6
5
4
DIM
A
B
C
D
G
H
J
K
N
S
−B−
S
1
2
3
D 6 PL
0.2 (0.008)
M
B
M
INCHES
MIN
MAX
0.071 0.087
0.045 0.053
0.031 0.043
0.004 0.012
0.026 BSC
−−− 0.004
0.004 0.010
0.004 0.012
0.008 REF
0.079 0.087
MILLIMETERS
MIN
MAX
1.80
2.20
1.15
1.35
0.80
1.10
0.10
0.30
0.65 BSC
−−−
0.10
0.10
0.25
0.10
0.30
0.20 REF
2.00
2.20
N
STYLE 1:
PIN 1. SOURCE 2
2. GATE 2
3. DRAIN 1
4. SOURCE 1
5. GATE 1
6. DRAIN 2
J
C
H
K
SOLDERING FOOTPRINT*
0.50
0.0197
0.65
0.025
0.65
0.025
0.40
0.0157
1.9
0.0748
SCALE 20:1
mm inches
Rev .O 5/5