LESHAN RADIO COMPANY, LTD. 20V P-Channel Enhancement-Mode MOSFET VDS= -20V LP4101LT1G S-LP4101LT1G RDS(ON), [email protected], [email protected] = 100 mΩ RDS(ON), [email protected], [email protected] = 150 mΩ Features 3 Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current 1 Improved Shoot-Through FOM 2 we declare that the material of product SOT– 23 (TO–236AB) compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 3 D ▼ Simple Drive Requirement ▼ Small Package Outline G ▼ Surface Mount Device 1 2 S Ordering Information Device Marking Shipping LP4101LT1G S-LP4101LT1G P41 3000/Tape & Reel LP4101LT3G S-LP4101LT3G P41 10,000/Tape & Reel Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted) Symbol Limit Drain-Source Voltage VDS -20 Gate-Source Voltage VGS ±8 Continuous Drain Current ID -2.3 Pulsed Drain Current 1) IDM -8 Parameter o Maximum Power Dissipation TA = 25 C PD o TA = 75 C V A 0.9 W 0.57 TJ, Tstg Operating Junction and Storage Temperature Range 2) RqJA o -55 to 150 RqJC Junction-to-Case Thermal Resistance Junction-to-Ambient Thermal Resistance (PCB mounted) Unit o 140 Note: 1. Repetitive Rating: Pulse width limited by the Maximum junction temperation 2 2. 1-in 2oz Cu PCB board 3. Guaranteed by design; not subject to production testing Rev .O 1/5 C C/W LESHAN RADIO COMPANY, LTD. LP4101LT1G , S-LP4101LT1G ELECTRICAL CHARACTERISTICS Parameter Symbol Test Condition Min Typ Max Unit Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = -250uA -20 - - V Drain-Source On-State Resistance RDS(on) VGS = -4.5V, ID = -2.8A 69 100 mΩ Drain-Source On-State Resistance RDS(on) VGS = -2.5V, ID = -2.0A 83 150 mΩ Gate Threshold Voltage VGS(th) VDS =VGS, ID = -250uA Zero Gate Voltage Drain Current IDSS VDS = -9.6V, VGS = 0V Gate Body Leakage IGSS VGS = ±8V, VDS = 0V Gate Resistance Rg Forward Transconductance gfs Static Dynamic -0.45 -0.95 V -1 uA ±100 nA Ω VDS = -5V, ID = -4.0A 6.5 S 3) Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) Turn-Off Fall Time tf Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = -6V, ID = -2.8A VGS = -4.5V 15.23 nC 5.49 2.74 17.28 VDD = -6V, RL = 6Ω ΙD = −1Α, VGEN = -4.5V RG = 6Ω 3.73 ns 36.05 6.19 882.51 VDS = -6V, VGS = 0V f = 1.0 MHz pF 145.54 97.26 Source-Drain Diode Max. Diode Forward Current IS Diode Forward Voltage VSD IS = -0.75A, VGS = 0V -0.8 -2.4 A -1.2 V Note: Pulse test: pulse width <= 300us, duty cycle<= 2% Rev .O 2/5 LESHAN RADIO COMPANY, LTD. LP4101LT1G , S-LP4101LT1G TYPICAL ELECTRICAL CHARACTERISTICS 20 Vds=5V 16 25°C Id , DRAIN CUR RENT(A) Id DRAIN CURRENT(A ) 18 14 12 10 8 6 4 2 0 18 16 14 Vgs=2V 12 10 8 6 Vgs=1.5V 4 2 0 0 0.5 1 1.5 2 Vgs, GA TE-TO-SOURCE VOLTAGE(V) 2.5 0 0.5 Figure 1. Transfer Characteristics 0.5 0.45 0.4 0.35 Vgs=1.5V 0.3 0.25 0.2 Vgs=2V 0.15 0.1 0.05 Vgs=2.5V 0 0 1 2 3 4 5 Id- Drain curren t 1 1.5 2 2.5 3 3.5 4 Vds ,DRAIN-TO-S OURCE VOLTA GE(V) 4.5 5 Figure 2. On–Region Characteristics Rds(on) -On-Resista nce(Ω) Rds(on) -On-Resistance(Ω) Vgs=2.5V 25°C 6 7 Figure 3. On–Resistance versus Drain Current 8 0.5 0.45 0.4 0.35 0.3 0.25 Id=3.5A 0.2 0.15 0.1 0.05 0 0 2 4 6 Vgs-Gate-to- Source Voltag e(V) Figure 4. On-Resistance vs. Gate-to-Source Voltage Rev .O 3/5 8 LESHAN RADIO COMPANY, LTD. LP4101LT1G , S-LP4101LT1G TYPICAL ELECTRICAL CHARACTERISTICS 12 1800 1600 10 Ca pa ci ta nc e 1400 Vgs(V) 8 6 4 1200 Ciss 1000 800 600 Coss 400 2 200 Crss 0 0 0 5 10 15 20 25 0 30 1 2 3 Figure 5. Gate Charge 5 6 7 Figure 6. Capacitance 120 0 -0.1 100 -0.2 80 VGS(TH)(V) Rd s( on ) (m R ) 4 V ds Qgs(nC) VGS=-4.5V ID=2A 60 40 -0.3 -0.4 -0.5 -0.6 ID=250uA -0.7 -0.8 20 -0.9 0 -50 0 50 100 150 Temp( o C) Figure 7. On-Resistance Vs.Junction Temperature -1 -50 0 50 100 Temp( o C) Figure 8. Vth Vs.Junction Temperature Rev .O 4/5 150 LESHAN RADIO COMPANY, LTD. LP4101LT1G , S-LP4101LT1G SOT-23 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,1982 2. CONTROLLING DIMENSION: INCH. A L 3 1 V 2 A B C D G H J G C D MIN 0.1102 0.0472 0.0350 0.0150 0.0701 0.0005 INCHES MAX 0.1197 0.0551 0.0440 0.0200 0.0807 0.0040 0.0034 0.0140 0.0350 0.0830 0.0177 0.0070 0.0285 0.0401 0.1039 0.0236 DIM B S H K J K L S V MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.35 0.89 2.10 0.45 0.177 0.69 1.02 2.64 0.60 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm Rev .O 5/5