LESHAN RADIO COMPANY, LTD. 60V N-Channel Enhancement-Mode MOSFET FEATURES ● RDS(ON) ≦100mΩ@VGS=10V LN2308LT1G S-LN2308LT1G ● RDS(ON) ≦130mΩ@VGS=4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current 3 capability ● Capable doing Cu wire bonding 1 ● S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 2 SOT– 23 APPLICATIONS 3 ● Power Management in Note book ● Portable Equipment ● Battery Powered System ● Load Switch ● DSC 1 Ordering Information Device LN2308LT1G S-LN2308LT1G LN2308LT3G S-LN2308LT3G Marking Shipping N08 3000/Tape& Reel N08 10000/Tape& Reel 2 Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Parameter Symbol Limit Unit Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS ±20 V Continuous Drain TA=25℃ Current(tJ=150℃) TA=70℃ Pulsed Drain Current Maximum Body-Diode Continuous Current 2.6 ID IDM 8 IS 1.6 TA=25℃ Maximum Power Dissipation TA=70℃ Operating Junction Temperature Maximum Junction-to-Ambient Thermal Resistance-Junction to Case A 1.8 A 0.7 PD W 0.45 TJ ℃ 150 T≦10 sec 150 Steady State 175 ℃/W RthJA RθJC ℃/W 120 *The device mounted on 1in2 FR4 board with 2 oz copper Rev.O 1/5 LESHAN RADIO COMPANY, LTD. LN2308LT1G , S-LN2308LT1G Electrical Characteristics (Ta=25℃ Unless Otherwise Specified) Symbol Parameter Limit Min BVDSS Drain-Source Breakdown Voltage VGS=0, ID=250μA 60 VGS(th) Gate Threshold Voltage VDS=VGS, ID=250μA 1 IGSS Gate Body Leakage IDSS Zero Gate Voltage Drain Current RDS(ON) Drain-Source On-Resistance Typ Max Unit STATIC V 3 V VDS=0V, VGS=±20V ±100 nA VDS=60V, VGS=0V 1 μA VGS=10V, ID= 2.6A 82 100 VGS=4.5V, ID= 2.1A 96 130 Diode Forward Voltage IS=1.0A, VGS=0V 0.8 1.2 Qg Total Gate Charge VDS=30V, VGS=10V, ID=2.6A 12 Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge 2.7 Ciss Input capacitance 350 Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance td(on) Turn-On Delay Time VSD mΩ V DYNAMIC tr Turn-On Rise Time 6.5 VDS=30V, VGS=4.5V, ID=2.6A VDS=30V, VGS=0V, f=1MHz nC 2.2 pF 40 12 VDS=0V, VGS=0V, f=1MHz Ω 0.7 10 VDD=20V, RL =20Ω 11 ID=1A, VGEN=10V td(off) Turn-Off Delay Time tf Turn-Off Fall Time RG=1Ω ns 29 3 Notes: Pulse test; pulse width≦ 300us, duty cycle≦ 2%. Rev.O 2/5 LESHAN RADIO COMPANY, LTD. Typical Characteristics (Ta =25℃ Noted) LN2308LT1G , S-LN2308LT1G Rev.O 3/5 LESHAN RADIO COMPANY, LTD. Typical Characteristics (Ta =25℃ Noted) LN2308LT1G , S-LN2308LT1G Rev.O 4/5 LESHAN RADIO COMPANY, LTD. LN2308LT1G , S-LN2308LT1G SOT-23 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,1982 2. CONTROLLING DIMENSION: INCH. A L 3 1 V 2 DIM B S G C D H K J MIN 0.1102 0.0472 0.0350 0.0150 0.0701 0.0005 0.0034 0.0140 0.0350 0.0830 0.0177 A B C D G H J K L S V INCHES MAX 0.1197 0.0551 0.0440 0.0200 0.0807 0.0040 0.0070 0.0285 0.0401 0.1039 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm Rev.O 5/5