LN2308LT1G

LESHAN RADIO COMPANY, LTD.
60V N-Channel Enhancement-Mode MOSFET
FEATURES
● RDS(ON) ≦100mΩ@VGS=10V
LN2308LT1G
S-LN2308LT1G
● RDS(ON) ≦130mΩ@VGS=4.5V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current
3
capability
● Capable doing Cu wire bonding
1
● S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
2
SOT– 23
APPLICATIONS
3
● Power Management in Note book
● Portable Equipment
● Battery Powered System
● Load Switch
● DSC
1
Ordering Information
Device
LN2308LT1G
S-LN2308LT1G
LN2308LT3G
S-LN2308LT3G
Marking
Shipping
N08
3000/Tape& Reel
N08
10000/Tape& Reel
2
Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDSS
60
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain
TA=25℃
Current(tJ=150℃)
TA=70℃
Pulsed Drain Current
Maximum Body-Diode Continuous Current
2.6
ID
IDM
8
IS
1.6
TA=25℃
Maximum Power Dissipation
TA=70℃
Operating Junction Temperature
Maximum Junction-to-Ambient
Thermal Resistance-Junction to Case
A
1.8
A
0.7
PD
W
0.45
TJ
℃
150
T≦10 sec
150
Steady State
175
℃/W
RthJA
RθJC
℃/W
120
*The device mounted on 1in2 FR4 board with 2 oz copper
Rev.O 1/5
LESHAN RADIO COMPANY, LTD.
LN2308LT1G , S-LN2308LT1G
Electrical Characteristics (Ta=25℃ Unless Otherwise Specified)
Symbol
Parameter
Limit
Min
BVDSS
Drain-Source Breakdown Voltage
VGS=0, ID=250μA
60
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250μA
1
IGSS
Gate Body Leakage
IDSS
Zero Gate Voltage Drain Current
RDS(ON)
Drain-Source On-Resistance
Typ
Max
Unit
STATIC
V
3
V
VDS=0V, VGS=±20V
±100
nA
VDS=60V, VGS=0V
1
μA
VGS=10V, ID= 2.6A
82
100
VGS=4.5V, ID= 2.1A
96
130
Diode Forward Voltage
IS=1.0A, VGS=0V
0.8
1.2
Qg
Total Gate Charge
VDS=30V, VGS=10V, ID=2.6A
12
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
2.7
Ciss
Input capacitance
350
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
td(on)
Turn-On Delay Time
VSD
mΩ
V
DYNAMIC
tr
Turn-On Rise Time
6.5
VDS=30V, VGS=4.5V, ID=2.6A
VDS=30V, VGS=0V, f=1MHz
nC
2.2
pF
40
12
VDS=0V, VGS=0V, f=1MHz
Ω
0.7
10
VDD=20V, RL =20Ω
11
ID=1A, VGEN=10V
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
RG=1Ω
ns
29
3
Notes: Pulse test; pulse width≦ 300us, duty cycle≦ 2%.
Rev.O 2/5
LESHAN RADIO COMPANY, LTD.
Typical Characteristics (Ta =25℃ Noted)
LN2308LT1G , S-LN2308LT1G
Rev.O 3/5
LESHAN RADIO COMPANY, LTD.
Typical Characteristics (Ta =25℃ Noted)
LN2308LT1G , S-LN2308LT1G
Rev.O 4/5
LESHAN RADIO COMPANY, LTD.
LN2308LT1G , S-LN2308LT1G
SOT-23
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M,1982
2. CONTROLLING DIMENSION: INCH.
A
L
3
1
V
2
DIM
B S
G
C
D
H
K
J
MIN
0.1102
0.0472
0.0350
0.0150
0.0701
0.0005
0.0034
0.0140
0.0350
0.0830
0.0177
A
B
C
D
G
H
J
K
L
S
V
INCHES
MAX
0.1197
0.0551
0.0440
0.0200
0.0807
0.0040
0.0070
0.0285
0.0401
0.1039
0.0236
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.177
0.35
0.69
0.89
1.02
2.10
2.64
0.45
0.60
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
Rev.O 5/5