LESHAN RADIO COMPANY, LTD. Power MOSFET 200 mAmps, 50 Volts N–Channel SC– 88 Typical applications are dc–dc converters, power management in portable and battery–powered products such as computers,printers, PCMCIA cards, cellular and cordless telephones. LBSS138DW1T1G S-LBSS138DW1T1G ●FEATURES 1)Low Threshold Voltage (VGS(th): 0.5V...1.5V) makes it ideal for low voltage applications S Surface urface Mount 2)Miniature SC 88 MountPackage Packagesaves savesboard boardspace space 3)Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish 4)We declare that the material of product compliant with RoHS requirements and Halogen Free. 5) S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. ●ORDERING INFORMATION Device Marking LBSS138DW1T1G J1 LBSS138DW1T3G J1 Simplified Schematic 2 1 D2 G1 S1 S2 G2 D1 5 6 Shipping 3000/Tape&Reel 10000/Tape&Reel ●MAXIMUM RATINGS(Ta = 25℃ unless otherwise noted)) Value Symbol Rating Drain–to–Source Voltage VDSS 50 Gate–to–Source Voltage – Continuous VGS 20 Unit Vdc Drain Current – Continuous @ TA = 25°C – Pulsed Drain Current (tp 10 s) IDM 200 800 mA Total Power Dissipation @ TA = 25C PD 225 mW Operating and Storage Temperature Range TJ, Tstg – 55 to 150 C Thermal Resistance – Junction–to–Ambient RθJA 556 C/W Maximum Lead Temperature for Soldering Purposes, for 10 seconds TL 260 C June,2015 3 ID 4 (Top View) Vdc Rev.A 1/4 LESHAN RADIO COMPANY, LTD. LBSS138DW1T1G,S-LBSS138DW1T1G ●ELECTRICAL CHARACTERISTICS (Ta= 25℃) Characteristic OFF CHARACTERISTICS Drain–to–Source Breakdown Voltage (VGS = 0 Vdc, ID = 250 Adc) Symbol Min. Typ. Max. V(BR)DSS 50 – – – – 0.1 – – 0.5 Unit Vdc Adc Zero Gate Voltage Drain Current (VDS = 25 Vdc, VGS = 0 Vdc) (VDS = 50 Vdc, VGS = 0 Vdc) IDSS Gate–Source Leakage Current (VGS = 20 Vdc, VDS = 0 Vdc) IGSS – – 0.1 Adc VGS(th) 0.5 – 1.5 Vdc – 5.6 10 – – 3.5 gfs 100 – – mmhos Ciss Coss – – 40 12 50 25 pF Crss – 3.5 5.0 td(on) – – 20 ns td(off) – – 20 ns ON CHARACTERISTICS (Note 1.) Gate–Source Threshold Voltage (VDS = VGS, ID = 1.0 mAdc) Static Drain–to–Source On–Resistance (VGS = 2.75 Vdc, ID < 200 mAdc, TA = –40C to +85C) (VGS = 5.0 Vdc, ID = 200 mAdc) rDS(on) Forward Transconductance (VDS = 25 Vdc, ID = 200 mAdc, f = 1.0 kHz) DYNAMIC CHARACTERISTICS (VDS = 25 Vdc, VGS = 0, f = 1 MHz) Input Capacitance Output Capacitance (VDS = 25 Vdc, VGS = 0, f = 1 MHz) Transfer Capacitance (VDG = 25 Vdc, VGS = 0, f = 1 MHz) SWITCHING CHARACTERISTICS (Note 2.) Turn–On Delay Time (V DD = 30 Vdc , ID =200 mAdc Turn–Off Delay Time Ohms 1. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2.0%. 2. Switching characteristics are independent of operating junction temperature. June,2015 Rev.A 2/4 LESHAN RADIO COMPANY, LTD. LBSS138DW1T1G,S-LBSS138DW1T1G ELECTRICAL CHARACTERISTIC CURVES June,2015 FIG.1 FIG.2 FIG.3 FIG.4 FIG.5 FIG.6 Rev.A 3/4 LESHAN RADIO COMPANY, LTD. LBSS138DW1T1G,S-LBSS138DW1T1G SC−88 (SOT−363) A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419B−01 OBSOLETE, NEW STANDARD 419B−02. G 6 5 4 DIM A B C D G H J K N S −B− S 1 2 3 D 6 PL 0.2 (0.008) M B M INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC −−− 0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC −−− 0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 N J C H K SOLDERING FOOTPRINT* 0.50 0.0197 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 June,2015 SCALE 20:1 mm inches Rev.A 4/4