LBSS138DW1T1G S

LESHAN RADIO COMPANY, LTD.
Power MOSFET
200 mAmps, 50 Volts
N–Channel SC– 88
Typical applications are dc–dc converters, power management in
portable and battery–powered products such as computers,printers,
PCMCIA cards, cellular and cordless telephones.
LBSS138DW1T1G
S-LBSS138DW1T1G
●FEATURES
1)Low Threshold Voltage (VGS(th): 0.5V...1.5V) makes it ideal for low
voltage applications
S Surface
urface Mount
2)Miniature SC 88
MountPackage
Packagesaves
savesboard
boardspace
space
3)Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
4)We declare that the material of product compliant with RoHS
requirements and Halogen Free.
5) S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
●ORDERING INFORMATION
Device
Marking
LBSS138DW1T1G
J1
LBSS138DW1T3G
J1
Simplified Schematic
2
1
D2
G1
S1
S2
G2
D1
5
6
Shipping
3000/Tape&Reel
10000/Tape&Reel
●MAXIMUM RATINGS(Ta = 25℃ unless otherwise noted))
Value
Symbol
Rating
Drain–to–Source Voltage
VDSS
50
Gate–to–Source Voltage – Continuous
VGS
 20
Unit
Vdc
Drain Current
– Continuous @ TA = 25°C
– Pulsed Drain Current (tp  10 s)
IDM
200
800
mA
Total Power Dissipation @ TA = 25C
PD
225
mW
Operating and Storage Temperature Range
TJ, Tstg
– 55 to
150
C
Thermal Resistance – Junction–to–Ambient
RθJA
556
C/W
Maximum Lead Temperature for Soldering
Purposes, for 10 seconds
TL
260
C
June,2015
3
ID
4
(Top View)
Vdc
Rev.A 1/4
LESHAN RADIO COMPANY, LTD.
LBSS138DW1T1G,S-LBSS138DW1T1G
●ELECTRICAL CHARACTERISTICS (Ta= 25℃)
Characteristic
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 Adc)
Symbol Min. Typ. Max.
V(BR)DSS
50
–
–
–
–
0.1
–
–
0.5
Unit
Vdc
Adc
Zero Gate Voltage Drain Current
(VDS = 25 Vdc, VGS = 0 Vdc)
(VDS = 50 Vdc, VGS = 0 Vdc)
IDSS
Gate–Source Leakage Current (VGS =  20 Vdc, VDS = 0 Vdc)
IGSS
–
–
0.1
Adc
VGS(th)
0.5
–
1.5
Vdc
–
5.6
10
–
–
3.5
gfs
100
–
–
mmhos
Ciss
Coss
–
–
40
12
50
25
pF
Crss
–
3.5
5.0
td(on)
–
–
20
ns
td(off)
–
–
20
ns
ON CHARACTERISTICS (Note 1.)
Gate–Source Threshold Voltage
(VDS = VGS, ID = 1.0 mAdc)
Static Drain–to–Source On–Resistance
(VGS = 2.75 Vdc, ID < 200 mAdc, TA = –40C to +85C)
(VGS = 5.0 Vdc, ID = 200 mAdc)
rDS(on)
Forward Transconductance
(VDS = 25 Vdc, ID = 200 mAdc, f = 1.0 kHz)
DYNAMIC CHARACTERISTICS
(VDS = 25 Vdc, VGS = 0, f = 1 MHz)
Input Capacitance
Output Capacitance (VDS = 25 Vdc, VGS = 0, f = 1 MHz)
Transfer Capacitance (VDG = 25 Vdc, VGS = 0, f = 1 MHz)
SWITCHING CHARACTERISTICS (Note 2.)
Turn–On Delay Time
(V DD = 30 Vdc , ID =200 mAdc
Turn–Off Delay Time
Ohms
1. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2.0%.
2. Switching characteristics are independent of operating junction temperature.
June,2015
Rev.A 2/4
LESHAN RADIO COMPANY, LTD.
LBSS138DW1T1G,S-LBSS138DW1T1G
ELECTRICAL CHARACTERISTIC CURVES
June,2015
FIG.1
FIG.2
FIG.3
FIG.4
FIG.5
FIG.6
Rev.A 3/4
LESHAN RADIO COMPANY, LTD.
LBSS138DW1T1G,S-LBSS138DW1T1G
SC−88 (SOT−363)
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 419B−01 OBSOLETE, NEW STANDARD 419B−02.
G
6
5
4
DIM
A
B
C
D
G
H
J
K
N
S
−B−
S
1
2
3
D 6 PL
0.2 (0.008)
M
B
M
INCHES
MIN
MAX
0.071 0.087
0.045 0.053
0.031 0.043
0.004 0.012
0.026 BSC
−−− 0.004
0.004 0.010
0.004 0.012
0.008 REF
0.079 0.087
MILLIMETERS
MIN
MAX
1.80
2.20
1.15
1.35
0.80
1.10
0.10
0.30
0.65 BSC
−−−
0.10
0.10
0.25
0.10
0.30
0.20 REF
2.00
2.20
N
J
C
H
K
SOLDERING FOOTPRINT*
0.50
0.0197
0.65
0.025
0.65
0.025
0.40
0.0157
1.9
0.0748
June,2015
SCALE 20:1
mm inches
Rev.A 4/4