LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diode Common Anode Features • LBAW56DW1T1G S-LBAW56DW1T1G We declare that the material of product compliance with RoHS requirements. z S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 6 ORDERING INFORMATION Device PACKAGE LBAW56DW1T1G S-LBAW56DW1T1G LBAW56DW1T3G S-LBAW56DW1T3G SC88 5 4 Shipping 3000 Tape & Reel 1 2 3 SC88 10000 Tape & Reel SOT-363/SC-88 MAXIMUM RATINGS (EACH DIODE) Rating Reverse Voltage Symbol VR Forward Current Peak Forward Surge Current IF I FM(surge) Value Unit 70 200 500 Vdc mAdc mAdc THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 4 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation FR-4 Board(2), TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol Max Unit PD 200 mW RθJA PD 1.6 600 300 mW/°C °C/W mW RθJA TJ , Tstg 2.4 400 –55 to +150 mW/°C °C/W °C 1 6 2 5 3 4 DEVICE MARKING LBAW56DW1T1G = A1 ELECTRICAL CHARACTERISTICS (T A = 25 °C unless otherwise noted) (EACH DIODE) Characteristic Symbol Min Max Unit V (BR) 70 – Vdc – – – – 30 2.5 50 3 – – – – – 715 855 1000 1250 6.0 OFF CHARACTERISTICS Reverse Breakdown Voltage (I (BR) = 100 µAdc) Reverse Voltage Leakage Current (V R = 25 Vdc, T J = 150 °C) (V R = 70 Vdc) (V R = 70 Vdc, T J = 150 °C) Diode Capacitance (V R = 0, f = 1.0 MHz) Forward Voltage (I F = 1.0 mAdc) (I F = 10 mAdc) (I F = 50 mAdc) (I F = 150 mAdc) Reverse Recovery Time (I F = I R = 10 mAdc, I R(REC) = 1.0 mAdc) (Figure 1) R L = 100Ω 1. FR-5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. IR µAdc C D V F t rr pF mVdc ns Rev.A 1/3 LESHAN RADIO COMPANY, LTD. LBAW56DW1T1G, S-LBAW56DW1T1G 820 Ω +10 V 2k 0.1 µF 100 µH tp tr IF 0.1 µF IF t trr 10% t DUT 50 Ω OUTPUT PULSE GENERATOR 50 Ω INPUT SAMPLING OSCILLOSCOPE 90% iR(REC) = 1.0 mA IR VR OUTPUT PULSE (IF = IR = 10 mA; measured at iR(REC) = 1.0 mA) INPUT SIGNAL Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit CURVES APPLICABLE TO EACH CATHODE 100 10 I R , REVERSE CURRENT (µA) T A = 85°C 10 T A = – 40°C 1.0 T A = 25°C 0.1 T A = 125°C 1.0 T A = 85°C 0.1 T A = 55°C 0.01 T A = 25°C 0.001 0.2 0.4 0.6 0.8 1.0 0 1.2 10 20 30 40 V R , REVERSE VOLTAGE (VOLTS) V F , FORWARD VOLTAGE (VOLTS) Figure 3. Leakage Current Figure 2. Forward Voltage 1.75 C D ,DIODE CAPACITANCE (pF) I F , FORWARD CURRENT (mA) T A = 150°C 1.5 1.25 1.0 0.75 0 2 4 6 8 V R , REVERSE VOLTAGE (VOLTS) Figure 4. Capacitance Rev.A 2/3 50 LESHAN RADIO COMPANY, LTD. LBAW56DW1T1G, S-LBAW56DW1T1G PACKAGE DIMENSIONS SC–88 (SOT–363) A G V 6 5 4 1 2 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. –B– S D 6 PL 0.2 (0.008) M B DIM A B C D G H J K N S V M N INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC --0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 0.012 0.016 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC --0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 0.30 0.40 J C K H ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ 0.65 mm 0.65 mm 0.4 mm (min) 0.5 mm (min) 1.9 mm Rev.A 3/3