Distributed Gate Thyristor Type R0990LC08x

Date:- 01 August 2012
Data Sheet Issue:- 3
Distributed Gate Thyristor
Type R0990LC08x
(Old Type Number: R270CH04-08)
Absolute Maximum Ratings
VOLTAGE RATINGS
MAXIMUM
LIMITS
UNITS
VDRM
Repetitive peak off-state voltage, (note 1)
800
V
VDSM
Non-repetitive peak off-state voltage, (note 1)
900
V
VRRM
Repetitive peak reverse voltage, (note 1)
800
V
VRSM
Non-repetitive peak reverse voltage, (note 1)
900
V
MAXIMUM
LIMITS
UNITS
Maximum average on-state current, Tsink=55°C, (note 2)
990
A
Maximum average on-state current. Tsink=85°C, (note 2)
652
A
Maximum average on-state current. Tsink=85°C, (note 3)
373
A
Nominal RMS on-state current, Tsink=25°C, (note 2)
2001
A
D.C. on-state current, Tsink=25°C, (note 4)
1627
A
Peak non-repetitive surge tp=10ms, Vrm=60%VRRM, (note 5)
11000
A
Peak non-repetitive surge tp=10ms, Vrm≤10V, (note 5)
12000
OTHER RATINGS
IT(AV)M
IT(AV)M
IT(AV)M
IT(RMS)
IT(d.c.)
ITSM
ITSM2
2
It
I2 t
(di/dt)cr
2
I t capacity for fusing tp=10ms, Vrm=60%VRRM, (note 5)
I2t capacity for fusing tp=10ms, Vrm≤10V, (note 5)
A
3
A2s
3
A2s
605×10
720×10
Maximum rate of rise of on-state current (repetitive), (note 6)
1000
Maximum rate of rise of on-state current (non-repetitive), (note 6)
1500
A/µs
Peak reverse gate voltage
5
V
PG(AV)
Mean forward gate power
2
W
PGM
Peak forward gate power
30
W
Tj op
Operating temperature range
-40 to +125
°C
Tstg
Storage temperature range
-40 to +150
°C
VRGM
Notes:1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.
4) Double side cooled.
5) Half-sinewave, 125°C Tj initial.
6) VD=67% VDRM, IFG=2A, tr≤0.5µs, Tcase=125°C.
Data Sheet. Type R0990LC08x Issue 3
Page 1 of 12
August 2012
Distributed Gate Thyristor Type R0990LC08x
Characteristics
PARAMETER
MIN.
TYP.
MAX. TEST CONDITIONS (Note 1)
UNITS
VTM
Maximum peak on-state voltage
-
-
1.84
VT0
Threshold voltage
-
-
1.35
V
rT
Slope resistance
-
-
0.35
mΩ
200
-
-
(dv/dt)cr Critical rate of rise of off-state voltage
ITM=1400A
V
VD=80% VDRM, Linear ramp, Gate o/c
V/µs
IDRM
Peak off-state current
-
-
70
Rated VDRM
mA
IRRM
Peak reverse current
-
-
70
Rated VRRM
mA
VGT
Gate trigger voltage
-
-
3.0
IGT
Gate trigger current
-
-
300
VGD
Gate non-trigger voltage
-
-
0.25
Rated VDRM
IH
Holding current
-
-
1000
Tj=25°C
mA
tgd
Gate controlled turn-on delay time
0.4
1.0
tgt
Turn-on time
-
1.0
2.0
VD=67% VDRM, ITM=1500A, di/dt=60A/µs,
IFG=2A, tr=0.5µs, Tj=25°C
µs
Qrr
Recovered charge
-
90
105
Qra
Recovered charge, 50% Chord
-
40
-
Irm
Reverse recovery current
-
55
-
trr
Reverse recovery time
-
1.55
-
-
10
-
-
12
-
-
-
0.032
Double side cooled
K/W
-
-
0.064
Single side cooled
K/W
10
-
20
-
340
-
tq
Turn-off time (note 2)
RthJK
Thermal resistance, junction to heatsink
(note 3)
F
Mounting force
Wt
Weight
Tj=25°C
V
VD=10V, IT=3A
mA
V
µC
ITM=1000A, tp=1000µs, di/dt=60A/µs,
Vr=50V
Page 2 of 12
A
µs
ITM=1000A, tp=1000µs, di/dt=60A/µs,
Vr=50V, Vdr=33%VDRM, dVdr/dt=20V/µs
IITM=1000A, tp=1000µs, di/dt=60A/µs,
Vr=50V, Vdr=33%VDRM, dVdr/dt=200V/µs
µs
kN
Outline option LC
g
Notes:1) Unless otherwise indicated Tj=125°C.
2) The required tq (specified with dVdr/dt=200V/µs) is represented by ‘x’ in the device part number. See ordering
information for details of tq codes.
3) For other clamp forces, please consult factory
Data Sheet. Type R0990LC08x Issue 3
µC
August 2012
Distributed Gate Thyristor Type R0990LC08x
Notes on Ratings and Characteristics
1.0 Voltage Grade Table
Voltage Grade
08
VDRM VDSM
V
800
VRRM
V
800
VRSM
V
900
VD
DC V
900
VR
DC V
530
2.0 Extension of Voltage Grades
This report is applicable to other and higher voltage grades when supply has been agreed by
Sales/Production.
3.0 Extension of Turn-off Time
This Report is applicable to other tq/re-applied dv/dt combinations when supply has been agreed by
Sales/Production.
4.0 Repetitive dv/dt
Higher dv/dt selections are available up to 1000V/µs on request.
5.0 De-rating Factor
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C.
6.0 Snubber Components
When selecting snubber components, care must be taken not to use excessively large values of snubber
capacitor or excessively small values of snubber resistor. Such excessive component values may lead to
device damage due to the large resultant values of snubber discharge current. If required, please consult
the factory for assistance.
7.0 Rate of rise of on-state current
The maximum un-primed rate of rise of on-state current must not exceed 1500A/µs at any time during
turn-on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not
exceed 1000A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.
8.0 Gate Drive
The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least
30V is assumed. This gate drive must be applied when using the full di/dt capability of the device.
IGM
4A/µs
IG
tp1
The magnitude of IGM should be between five and ten times IGT, which is shown on page 2. Its duration
(tp1) should be 20µs or sufficient to allow the anode current to reach ten times IL, whichever is greater.
Otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. The
‘back-porch’ current IG should remain flowing for the same duration as the anode current and have a
magnitude in the order of 1.5 times IGT.
Data Sheet. Type R0990LC08x Issue 3
Page 3 of 12
August 2012
Distributed Gate Thyristor Type R0990LC08x
9.0 Frequency Ratings
The curves illustrated in figures 10 to 18 are for guidance only and are superseded by the maximum
ratings shown on page 1.
10.0 Square wave ratings
These ratings are given for load component rate of rise of forward current of 100 and 500 A/µs.
11.0 Duty cycle lines
The 100% duty cycle is represented on all the ratings by a straight line. Other duties can be included as
parallel to the first.
12.0 Maximum Operating Frequency
The maximum operating frequency is set by the on-state duty, the time required for the thyristor to turn off
(tq) and for the off-state voltage to reach full value (tv), i.e.
f
max
=
1
tpulse + tq + tv
13.0 On-State Energy per Pulse Characteristics
These curves enable rapid estimation of device dissipation to be obtained for conditions not covered by
the frequency ratings.
Let Ep be the Energy per pulse for a given current and pulse width, in joules
Let RthJK be the steady-state d.c. thermal resistance (junction to sink)
and TK be the heat sink temperature.
Then the average dissipation will be:
W AV = E P ⋅ f and TK (max .) = 125 − (W AV ⋅ RthJK )
14.0 Reverse recovery ratings
(i) Qra is based on 50% Irm chord as shown in Fig. 1
Fig. 1
150 µs
(ii) Qrr is based on a 150µs integration time i.e.
Qrr =
∫i
rr
.dt
0
(iii)
Data Sheet. Type R0990LC08x Issue 3
K Factor =
Page 4 of 12
t1
t2
August 2012
Distributed Gate Thyristor Type R0990LC08x
15.0 Reverse Recovery Loss
15.1 Determination by Measurement
From waveforms of recovery current obtained from a high frequency shunt (see Note 1, Page 5) and
reverse voltage present during recovery, an instantaneous reverse recovery loss waveform must be
constructed. Let the area under this waveform be E joules per pulse. A new heat sink temperature can
then be evaluated from the following:
TK ( new ) = TK ( original ) − E ⋅ (k + f ⋅ RthJK )
Where k=0.227 (°C/W)/s
E = Area under reverse loss waveform per pulse in joules (W.s.)
f = rated frequency Hz at the original heat sink temperature.
RthJK = d.c. thermal resistance (°C/W).
The total dissipation is now given by:
W (TOT) = W (original) + E ⋅ f
15.2 Determination without Measurement
In circumstances where it is not possible to measure voltage and current conditions, or for design
purposes, the additional losses E in joules may be estimated as follows.
Let E be the value of energy per reverse cycle in joules (curves in Figure 9).
Let f be the operating frequency in Hz
TK (new ) = TK (original ) − (E ⋅ Rth ⋅ f )
Where TK (new) is the required maximum heat sink temperature and
TK (original) is the heat sink temperature given with the frequency ratings.
A suitable R-C snubber network is connected across the thyristor to restrict the transient reverse voltage
to a peak value (Vrm) of 67% of the maximum grade. If a different grade is being used or Vrm is other than
67% of Grade, the reverse loss may be approximated by a pro rata adjustment of the maximum value
obtained from the curves.
NOTE 1- Reverse Recovery Loss by Measurement
This thyristor has a low reverse recovered charge and peak reverse recovery current. When measuring
the charge, care must be taken to ensure that:
(a) a.c. coupled devices such as current transformers are not affected by prior passage of high
amplitude forward current.
(b) A suitable, polarised, clipping circuit must be connected to the input of the measuring oscilloscope
to avoid overloading the internal amplifiers by the relatively high amplitude forward current signal
(c) Measurement of reverse recovery waveform should be carried out with an appropriate critically
damped snubber, connected across diode anode to cathode. The formula used for the calculation
of this snubber is shown below:
R2 = 4 ⋅
Vr
CS ⋅ di
dt
Data Sheet. Type R0990LC08x Issue 3
Where:
Vr
CS
R
= Commutating source voltage
= Snubber capacitance
= Snubber resistance
Page 5 of 12
August 2012
Distributed Gate Thyristor Type R0990LC08x
16.0 Computer Modelling Parameters
16.1 Calculating VT using ABCD Coefficients
The on-state characteristic IT vs VT, on page 7 is represented in two ways;
(i)
the well established VT0 and rT tangent used for rating purposes and
(ii)
a set of constants A, B, C, D, forming the coefficients of the representative equation for VT in
terms of IT given below:
VT = A + B ⋅ ln (I T ) + C ⋅ I T + D ⋅ I T
The constants, derived by curve fitting software, are given in this report for hot and cold characteristics
where possible. The resulting values for VT agree with the true device characteristic over a current range,
which is limited to that plotted.
125°C Coefficients
A
3.0403257
B
-0.4165914
C
-3.5756×10-5
D
0.04991413
16.2 D.C. Thermal Impedance Calculation
−t
⎛
τ
rt = ∑ rp ⋅ ⎜1 − e p
⎜
p =1
⎝
p=n
⎞
⎟
⎟
⎠
Where p = 1 to n, n is the number of terms in the series.
t
rt
rp
τp
=
=
=
=
Duration of heating pulse in seconds.
Thermal resistance at time t.
Amplitude of pth term.
Time Constant of rth term.
D.C. Double Side Cooled
Term
1
2
3
rp
0.01771901
4.240625×10
τp
0.7085781
0.1435833
-3
4
6.963806×10
-3
3.043661×10-3
2.130842×10-3
0.03615196
D.C. Single Side Cooled
Term
1
2
3
rp
0.03947164
0.01022837
8.789912×10
τp
4.090062
1.078983
0.08530917
Data Sheet. Type R0990LC08x Issue 3
Page 6 of 12
4
-3
4.235162×10
0.01128791
5
-3
1.907609×10-3
1.240861×10-3
August 2012
Distributed Gate Thyristor Type R0990LC08x
Curves
Figure 1 - On-state characteristics of Limit device
Figure 2 - Transient thermal impedance
10000
0.1
SSC 0.064K/W
DSC 0.032K/W
0.01
Transient Thermal Impedance - Z(th)t (K/W)
Instantaneous on-state current - I T (A)
Tj = 125°C
1000
0.001
0.0001
R0990LC08x
R0990LS04x-08x
Issue
Issue32
R0990LC08x
R0990LS04x-08x
Issue
Issue 32
100
0
0.5
1
1.5
2
2.5
3
0.00001
0.0001
Instantaneous on-state voltage - VT (V)
0.001
0.01
0.1
1
10
100
Time (s)
Figure 3 - Gate characteristics - Trigger limits
Figure 4 - Gate characteristics - Power curves
20
6
R0990LC08x
R0990LS04x-08x
Issue23
Issue
R0990LS04x-08x
R0990LC08x
Issue 23
18
Tj=25°C
Tj=25°C
5
16
Gate Trigger Voltage - VGT (V)
Gate Trigger Voltage - VGT (V)
14
Max VG dc
4
IGT, VGT
3
Max VG dc
12
10
8
2
PG Max 30W dc
-40°C
-10°C
25°C
125°C
6
4
1
PG 2W dc
2
IGD, VGD
Min VG dc
Min VG dc
0
0
0
0.2
0.4
0.6
0.8
0
1
Data Sheet. Type R0990LC08x Issue 3
2
4
6
8
10
Gate Trigger Current - IGT (A)
Gate Trigger Current - IGT (A)
Page 7 of 12
August 2012
Distributed Gate Thyristor Type R0990LC08x
Figure 5 - Total recovered charge, Qrr
Figure 6 - Recovered charge, Qra (50% chord)
1000
1000
2000A
1500A
1000A
2000A
Recovered charge - Qra (µC)
Total recovered charge - Qrr (µC)
500A
100
1500A
1000A
500A
100
Tj = 125°C
Tj = 125°C
R0990LS04x-08x
R0990LC08x
Issue
Issue 32
R0990LS04x-08x
R0990LC08x
Issue 32
Issue
10
10
10
100
1000
10
Commutation rate - di/dt (A/µs)
1000
Figure 8 - Maximum recovery time, trr (50%
chord)
Figure 7 - Peak reverse recovery current, Irm
10
1000
2000A
1500A
1000A
500A
Reverse recovery time - trr (µs)
Reverse recovery current - IRM (A)
100
Commutation rate - di/dt (A/µs)
100
2000A
1500A
1000A
500A
Tj = 125°C
R0990LS04x-08x
R0990LC08x
Issue32
Issue
Tj = 125°C
R0990LS04x-08x
R0990LC08x
Issue 32
Issue
1
10
10
100
10
1000
Commutation rate - di/dt (A/µs)
Data Sheet. Type R0990LC08x Issue 3
100
1000
Commutation rate - di/dt (A/µs)
Page 8 of 12
August 2012
Distributed Gate Thyristor Type R0990LC08x
Figure 9 – Reverse recovery energy per pulse
Figure 10 - Sine wave energy per pulse
1.00E+02
100
R0990LS04x-08x
R0990LC08x
Issue
Issue23
Tj=125°C
1500A
1.00E+01
Energy per pulse (J)
Energy per pulse - Er (mJ)
1000A
800A
500A
4kA
1.00E+00
2kA
1.5kA
1kA
1.00E-01
Snubber
0.25µF, 4.7Ω
500A
Tj = 125°C
Vr = 200V
R0990LS04x-08x
R0990LC08x
Issue32
Issue
10
10
100
1.00E-02
1.00E-05
1000
1.00E-04
Figure 11 - Sine wave frequency ratings
1.00E+05
1.00E-03
1.00E-02
Pulse width (s)
Commutation rate - di/dt (A/µs)
Figure 12 - Sine wave frequency ratings
1.00E+05
R0990LS04x-08x
R0990LC08x
Issue 23
THs=55°C
500A
100% Duty Cycle
500A
100% Duty Cycle
1.00E+04
1kA
1kA
1.00E+04
1.5kA
1.5kA
2kA
2kA
Frequency (Hz)
Frequency (Hz)
1.00E+03
1.00E+03
4kA
4kA
1.00E+02
1.00E+02
1.00E+01
THs=85°C
R0990LS04x-08x
R0990LC08x
Issue2 3
Issue
1.00E+01
1.00E-05
1.00E-04
1.00E-03
1.00E+00
1.00E-05
1.00E-02
Pulse Width (s)
Data Sheet. Type R0990LC08x Issue 3
1.00E-04
1.00E-03
1.00E-02
Pulse width (s)
Page 9 of 12
August 2012
Distributed Gate Thyristor Type R0990LC08x
Figure 13 - Square wave frequency ratings
Figure 14 - Square wave frequency ratings
1.00E+05
1.00E+05
100% Duty Cycle
100% Duty Cycle
500A
1.00E+04
1.00E+04
1kA
1.5kA
2kA
1.00E+03
1.00E+03
Frequency (Hz)
Frequency (Hz)
4kA
2kA
1.5kA
1kA
4kA
1.00E+02
1.00E+02
1.00E+01
1.00E+01
THs=55°C
THs=55°C
di/dt=100A/µs
R0990LS04x-08x
R0990LC08x
Issue
Issue23
di/dt=500A/µs
R0990LS04x-08x
R0990LC08x
Issue 32
Issue
1.00E+00
1.00E-05
1.00E-04
1.00E-03
1.00E+00
1.00E-05
1.00E-02
1.00E-04
Pulse width (s)
1.00E-03
1.00E-02
Pulse width (s)
Figure 15 - Square wave frequency ratings
Figure 16 - Square wave frequency ratings
1.00E+05
1.00E+05
100% Duty Cycle
500A
1.00E+04
100% Duty Cycle
500A
1.00E+04
1kA
1kA
1.5kA
1.5kA
Frequency (Hz)
Frequency (Hz)
1.00E+03
2kA
1.00E+03
2kA
1.00E+02
4kA
4kA
1.00E+02
1.00E+01
THs=85°C
THs=85°C
di/dt=100A/µs
R0990LS04x-08x
R0990LC08x
Issue
Issue2 3
di/dt=500A/µs
1.00E+01
1.00E-05
R0990LS04x-08x
R0990LC08x
Issue
Issue23
1.00E-04
1.00E-03
1.00E+00
1.00E-05
1.00E-02
Pulse width (s)
Data Sheet. Type R0990LC08x Issue 3
1.00E-04
1.00E-03
1.00E-02
Pulse width (s)
Page 10 of 12
August 2012
Distributed Gate Thyristor Type R0990LC08x
Figure 17 - Square wave energy per pulse
Figure 18 - Square wave energy per pulse
1.00E+03
1.00E+03
R0990LS04x-08x
R0990LC08x
Issue
Issue23
di/dt=500A/µs
Tj=125°C
R0990LS04x-08x
R0990LC08x
Issue23
Issue
di/dt=100A/µs
Tj=125°C
1.00E+02
1.00E+01
Energy per pulse (J)
Energy per pulse (J)
1.00E+02
4kA
1.00E+00
4kA
2kA
1.5kA
1.00E+01
1.00E+00
2kA
1kA
500A
1.5kA
1.00E-01
1kA
1.00E-01
500A
1.00E-02
1.00E-05
1.00E-04
1.00E-03
1.00E-02
1.00E-05
1.00E-02
1.00E-04
Pulse width (s)
1.00E-03
1.00E-02
Pulse width (s)
Figure 19 - Maximum surge and I2t Ratings
Gate may temporarily lose control of conduction angle
1.00E+07
R0990LC08x
R0990LS04x-08x
Issue2 3
Issue
I2t: VRRM≤10V
Tj (initial) = 125°C
2
I t: 60% VRRM
10000
1.00E+06
ITSM: VRRM≤10V
Maximum I2t (A2s)
Total peak half sine surge current - ITSM (A)
100000
ITSM: 60% VRRM
1000
1.00E+05
1
3
5
10
Duration of surge (ms)
Data Sheet. Type R0990LC08x Issue 3
1
5
10
50
100
Duration of surge (cycles @ 50Hz)
Page 11 of 12
August 2012
Distributed Gate Thyristor Type R0990LC08x
Outline Drawing & Ordering Information
101A216
Outline option LC
ORDERING INFORMATION
(Please quote 10 digit code as below)
R0990
LC
♦♦
♦
Fixed
Type Code
Outline Code
LC=27mm height,
Fixed Voltage Code
VDRM/100
08
tq Code
A=10µs, B=12µs,
C = 15µs
Typical order code: R0990LC08B – 600V VDRM, 800V VRRM 12µs tq, 27mm clamp height capsule.
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Tel: +49 6206 503-0
Fax: +49 6206 503-627
E-mail: [email protected]
IXYS Corporation
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Tel: +1 (408) 457 9000
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Tel: +44 (0)1249 444524
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E-mail: [email protected]
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The information contained herein is confidential and is protected by Copyright. The information may not be used or
disclosed except with the written permission of and in the manner permitted by the proprietors IXYS UK Westcode Ltd.
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2500 Mira Mar Ave, Long Beach
CA 90815
Tel: +1 (562) 296 6584
Fax: +1 (562) 296 6585
E-mail: [email protected]
© IXYS UK Westcode Ltd.
In the interest of product improvement, IXYS UK Westcode Ltd reserves the right to change specifications at any time
without prior notice.
Devices with a suffix code (2-letter or letter/digit/letter combination) added to their generic code are not necessarily
subject to the conditions and limits contained in this report.
Data Sheet. Type R0990LC08x Issue 3
Page 12 of 12
August 2012