Date:- 03 August 2012 Data Sheet Issue:- K1 Fast Turn-off Thyristor Type P0273SC12# Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VDRM Repetitive peak off-state voltage, (note 1) 1200 V VDSM Non-repetitive peak off-state voltage, (note 1) 1200 V VRRM Repetitive peak reverse voltage, (note 1) 1200 V VRSM Non-repetitive peak reverse voltage, (note 1) 1300 V MAXIMUM LIMITS UNITS OTHER RATINGS IT(AV) Mean on-state current, Tsink=55°C, (note 2) 273 A IT(AV) Mean on-state current. Tsink=85°C, (note 2) 175 A IT(RMS) Nominal RMS on-state current, Tsink=25°C, (note 2) 355 A IT(d.c.) D.C. on-state current, Tsink=25°C, (note 4) 355 A ITSM Peak non-repetitive surge tp=10ms, VRM=0.6VRRM, (note 5) 3250 A ITSM2 Peak non-repetitive surge tp=10ms, VRM≤10V, (note 5) 3575 2 A It I t capacity for fusing tp=10ms, VRM=0.6VRRM, (note 5) 52.8×10 A2s I2 t I2t capacity for fusing tp=10ms, VRM≤10V, (note 5) 63.9×103 A2s Maximum rate of rise of on-state current (repetitive), (Note 6) 500 A/µs Maximum rate of rise of on-state current (non-repetitive), (Note 6) 1000 A/µs (di/dt)cr 2 3 VFGM Peak forward gate voltage 12 V IFGM Peak forward gate current 18 A VRGM Peak reverse gate voltage 5 V PG(AV) Mean forward gate power 1.5 W PGM Peak forward gate power (100µs pulse width) 60 W VGD Non-trigger gate voltage, (Note 7) 0.25 V THS Operating temperature range -40 to +125 °C Tstg Storage temperature range -40 to +150 °C Notes:1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C. 2) Double side cooled, single phase; 50Hz, 180° half-sinewave. 3) Single side cooled, single phase; 50Hz, 180° half-sinewave. 4) Double side cooled. 5) Half-sinewave, 125°C Tj initial. 6) VD=80% VDRM, IFG=1A, tr≤1µs, Tcase=125°C. 7) Rated VDRM. Data Sheet. Type P0273SC12# Issue K1 Page 1 of 12 August 2012 Fast turn-off thyristor type P0273SC12# Characteristics PARAMETER MIN. TYP. MAX. TEST CONDITIONS (Note 1) UNITS VTM Maximum peak on-state voltage - - 2.074 VT0 Threshold voltage - - 1.55 V rT Slope resistance - - 0.87 mΩ 200 - - (dv/dt)cr Critical rate of rise of off-state voltage ITM=715A V VD=80% VDRM V/µs IDRM Peak off-state current - - 30 Rated VDRM mA IRRM Peak reverse current - - 30 Rated VRRM mA VGT Gate trigger voltage - - 3.0 Tj=25°C IGT Gate trigger current - - 200 Tj=25°C IH Holding current - - 600 Tj=25°C Qrr Recovered charge - - - Qra Recovered charge, 50% Chord - 45 - 25 - 40 tq Turn-off time (note 2) 20 - 30 - - 0.12 24.5 - 27 Nm - 280 - g RthJC Thermal resistance, junction to heatsink F Mounting force Wt Weight V VD=6V, IT=1A mA mA ITM=300A, tp=500µs, di/dt=20A/µs, Vr=50V ITM=300A, tp=500µs, di/dt=20A/µs, Vr=50V, Vdr=80%VDRM, dVdr/dt=20V/µs ITM=300A, tp=500µs, di/dt=50A/µs, Vr=50V, Vdr=80%VDRM, dVdr/dt=200V/µs Double side cooled Page 2 of 12 µC µs K/W Notes:1) Unless otherwise indicated Tj=125°C. 2) The required tq (specified with dVdr/dt=200V/µs) is represented by an ‘#’ in the device part number. See ordering information for details of tq codes. Data Sheet. Type P0273SC12# Issue K1 µC August 2012 Fast turn-off thyristor type P0273SC12# Notes on Ratings and Characteristics 1.0 Voltage Grade Table Voltage Grade 12 VDRM VDSM VRRM V 1200 VRSM V 1300 VD VR DC V 810 2.0 Extension of Voltage Grades This report is applicable to other and higher voltage grades when supply has been agreed by Sales/Production. 3.0 Extension of Turn-off Time This Report is applicable to other tq/re-applied dv/dt combinations when supply has been agreed by Sales/Production. 4.0 Repetitive dv/dt Higher dv/dt selections are available up to 1000V/µs on request. 5.0 De-rating Factor A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C. 6.0 Rate of rise of on-state current The maximum un-primed rate of rise of on-state current must not exceed 1500A/µs at any time during turn-on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not exceed 1000A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the total device current including that from any local snubber network. 7.0 Square wave ratings These ratings are given for load component rate of rise of forward current of 100 and 500 A/µs. 8.0 Duty cycle lines The 100% duty cycle is represented on all the ratings by a straight line. Other duties can be included as parallel to the first. 9.0 Maximum Operating Frequency The maximum operating frequency is set by the on-state duty, the time required for the thyristor to turn off (tq) and for the off-state voltage to reach full value (tv), i.e. f max = 1 tpulse + tq + tv Data Sheet. Type P0273SC12# Issue K1 Page 3 of 12 August 2012 Fast turn-off thyristor type P0273SC12# 10.0 On-State Energy per Pulse Characteristics These curves enable rapid estimation of device dissipation to be obtained for conditions not covered by the frequency ratings. Let Ep be the Energy per pulse for a given current and pulse width, in joules Let Rth(J-Hs) be the steady-state d.c. thermal resistance (junction to sink) and TSINK be the heat sink temperature. Then the average dissipation will be: W AV = E P ⋅ f and TSINK (max .) = 125 − (W AV ⋅ Rth ( J − Hs ) ) 11.0 Reverse recovery ratings (i) Qra is based on 50% Irm chord as shown in Fig. 1 below. Fig. 1 (ii) Qrr is based on a 100µs integration time. 100 µs i.e. Qrr = ∫i rr .dt 0 (iii) K Factor = t1 t2 12.0 Reverse Recovery Loss 12.1 Determination by Measurement From waveforms of recovery current obtained from a high frequency shunt (see Note 1, Page 5) and reverse voltage present during recovery, an instantaneous reverse recovery loss waveform must be constructed. Let the area under this waveform be E joules per pulse. A new heat sink temperature can then be evaluated from: TCASE ( new ) = TCASE ( original ) − E ⋅ (k + f ⋅ Rth ( J − Hs ) ) where k = 0.227 (°C/W)/s E = Area under reverse loss waveform per pulse in joules (W.s.) f = rated frequency Hz at the original heat sink temperature. Rth(J-Hs) = d.c. thermal resistance (°C/W). Data Sheet. Type P0273SC12# Issue K1 Page 4 of 12 August 2012 Fast turn-off thyristor type P0273SC12# The total dissipation is now given by: W (TOT) = W (original) + E ⋅ f 12.2 Determination without Measurement In circumstances where it is not possible to measure voltage and current conditions, or for design purposes, the additional losses E in joules may be estimated as follows. Let E be the value of energy per reverse cycle in joules (curves in Figure 9). Let f be the operating frequency in Hz TCASE (new ) = TCASE (original ) − (E ⋅ Rth ⋅ f ) Where TSINK (new) is the required maximum heat sink temperature and TSINK (original) is the heat sink temperature given with the frequency ratings. A suitable R-C snubber network is connected across the thyristor to restrict the transient reverse voltage to a peak value (Vrm) of 67% of the maximum grade. If a different grade is being used or Vrm is other than 67% of Grade, the reverse loss may be approximated by a pro rata adjustment of the maximum value obtained from the curves. 12.3 Reverse Recovery Loss by Measurement This thyristor has a low reverse recovered charge and peak reverse recovery current. When measuring the charge care must be taken to ensure that: (a) a.c. coupled devices such as current transformers are not affected by prior passage of high amplitude forward current. (b) A suitable, polarised, clipping circuit must be connected to the input of the measuring oscilloscope to avoid overloading the internal amplifiers by the relatively high amplitude forward current signal (c) Measurement of reverse recovery waveform should be carried out with an appropriate critically damped snubber, connected across diode anode to cathode. The formula used for the calculation of this snubber is shown below: R2 = 4 ⋅ Vr CS ⋅ di dt Where: Vr = Commutating source voltage CS = Snubber capacitance R = Snubber resistance 13.0 Gate Drive The recommended pulse gate drive is 20V, 20Ω with a short-circuit current rise time of not more than 1µs. This gate drive must be applied when using the full di/dt capability of the device. The duration of pulse may need to be configured with respect to the application but should be no shorter than 20µs, otherwise an increase in pulse current could be needed to supply the resulting increase in charge to trigger. Data Sheet. Type P0273SC12# Issue K1 Page 5 of 12 August 2012 Fast turn-off thyristor type P0273SC12# Curves Figure 1 - On-state characteristics of Limit device Figure 2 - Transient thermal impedance Data Sheet. Type P0273SC12# Issue K1 Page 6 of 12 August 2012 Fast turn-off thyristor type P0273SC12# Figure 3 - Gate characteristics at 25°C junction temperature Figure 4 - Gate trigger characteristic Trigger point of all thyristors lie within the areas shown. Gate drive load line must lie outside appropriate IG/VG rectangle Data Sheet. Type P0273SC12# Issue K1 Page 7 of 12 August 2012 Fast turn-off thyristor type P0273SC12# Figure 5 – Typical recovered charge Figure 7 - Sine wave frequency ratings Data Sheet. Type P0273SC12# Issue K1 Figure 6 - Sine wave frequency ratings Figure 8 - Sine wave energy per pulse Page 8 of 12 August 2012 Fast turn-off thyristor type P0273SC12# Figure 9 - Square wave frequency ratings Figure 10 - Square wave frequency ratings Figure 11 - Square wave frequency ratings Figure 12 - Square wave frequency ratings Data Sheet. Type P0273SC12# Issue K1 Page 9 of 12 August 2012 Fast turn-off thyristor type P0273SC12# Figure 13 - Square wave energy per pulse Figure 14 - Square wave energy per pulse Figure 15 – Maximum reverse recovery energy loss per pulse at Tj = 125°C and Vrrm = 804 volts Data Sheet. Type P0273SC12# Issue K1 Page 10 of 12 August 2012 Fast turn-off thyristor type P0273SC12# Figure 16 - Maximum surge and I2t Ratings Data Sheet. Type P0273SC12# Issue K1 Page 11 of 12 August 2012 Fast turn-off thyristor type P0273SC12# Outline Drawing & Ordering Information 101A225 ORDERING INFORMATION (Please quote 10 digit code as below) P0273 SC ♦♦ # Fixed Type Code Fixed Outline Code Off-state Voltage Code VDRM/100 12 tq Code D=20µs, E=25µs, F=30µs Typical order code: P0273SC12E – 1200V VDRM, 25µs tq IXYS Semiconductor GmbH Edisonstraße 15 D-68623 Lampertheim Tel: +49 6206 503-0 Fax: +49 6206 503-627 E-mail: [email protected] IXYS Corporation 1590 Buckeye Drive Milpitas CA 95035-7418 Tel: +1 (408) 457 9000 Fax: +1 (408) 496 0670 E-mail: [email protected] IXYS UK Westcode Ltd Langley Park Way, Langley Park, Chippenham, Wiltshire, SN15 1GE. Tel: +44 (0)1249 444524 Fax: +44 (0)1249 659448 E-mail: [email protected] www.ixysuk.com www.ixys.com The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed except with the written permission of and in the manner permitted by the proprietors IXYS UK Westcode Ltd. IXYS Long Beach IXYS Long Beach, Inc 2500 Mira Mar Ave, Long Beach CA 90815 Tel: +1 (562) 296 6584 Fax: +1 (562) 296 6585 E-mail: [email protected] © IXYS UK Westcode Ltd. In the interest of product improvement, IXYS UK Westcode Ltd reserves the right to change specifications at any time without prior notice. Devices with a suffix code (2-letter or letter/digit/letter combination) added to their generic code are not necessarily subject to the conditions and limits contained in this report. Data Sheet. Type P0273SC12# Issue K1 Page 12 of 12 August 2012