Distributed Gate Thyristor Types R3047TC24x to

Provisional Data
Data Sheet Issue:- 2
WESTCODE
Date:- 25 May, 2001
Absolute Maximum Ratings
VOLTAGE RATINGS (Note 1)
Repetitive peak off-state voltage
VDSM
Non-repetitive peak off-state voltage
VRRM
Repetitive peak reverse voltage
VRSM
Non-repetitive peak reverse voltage
VDRM
Distributed Gate Thyristor
Types R3047TC24x to R3047TC28x
OTHER RATINGS
MAXIMUM
LIMITS
UNITS
2400-2800
V
2400-2800
V
2400-2800
V
2500-2900
V
MAXIMUM
LIMITS
UNITS
IT(AV)
Mean on-state current, Tsink=55°C (note 2)
3047
A
IT(AV)
Mean on-state current. Tsink=85°C (note 2)
2043
A
IT(AV)
Mean on-state current. Tsink=85°C (note 3)
1196
A
IT(RMS)
Nominal RMS on-state current, Tsink=25°C (note 2)
6094
A
IT(d.c.)
D.C. on-state current, Tsink=25°C (note 4)
5097
A
ITSM
Peak non-repetitive surge tp=10ms, VRM=0.6VRRM (note 5)
50
kA
ITSM2
Peak non-repetitive surge tp=10ms, VRM≤10V (note 5)
55
2
I t capacity for fusing tp=10ms, VRM=0.6VRRM (note 5)
It
2
2
It
diT/dt
2
I t capacity for fusing tp=10ms, VRM≤10V (note 5)
kA
12.5×10
6
As
2
15.1×10
6
As
2
Maximum rate of rise of on-state current (repetitive) (Note 6)
500
A/µs
Maximum rate of rise of on-state current (non-repetitive) (Note 6)
1000
A/µs
VRGM
Peak reverse gate voltage
5
V
PG(AV)
Mean forward gate power
4
W
PGM
Peak forward gate power
50
W
VGD
Non-trigger gate voltage (Note 7)
0.25
V
THS
Operating temperature range
-40 to +125
°C
Tstg
Storage temperature range
-40 to +150
°C
Notes:1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.
4) Double side cooled.
5) Half-sinewave, 125°C Tj initial.
6) VD=67% VDRM, IFG=2A, tr≤0.5µs, Tcase=125°C.
7) Rated VDRM.
Provisional Data Sheet. Types R3047TC24x-28x Issue 2
Page 1 of 12
May, 2001
WESTCODE Positive development in power electronics
R3047TC24x-28x
Characteristics
MIN.
TYP.
MAX. TEST CONDITIONS (Note 1)
VTM
Maximum peak on-state voltage
-
-
2.45
V0
Threshold voltage
-
-
1.581
rS
Slope resistance
-
-
0.171
dv/dt
Critical rate of rise of off-state voltage
200
-
-
IDRM
Peak off-state current
-
-
IRRM
Peak reverse current
-
VGT
Gate trigger voltage
-
IGT
Gate trigger current
-
IH
Holding current
-
tgd
Gate-controlled turn-on delay time
-
tgt
Turn-on time
-
Qrr
Recovered charge
-
Qra
Recovered charge, 50% Chord
-
Irm
Reverse recovery current
-
trr
Reverse recovery time, 50% chord
Turn-off time
Rth(j-hs) Thermal resistance, junction to heatsink
F
Mounting force
Wt
Weight
ITM=5000A
V
mΩ
200
Rated VDRM
mA
-
200
Rated VRRM
mA
-
3.0
-
600
-
1000
0.7
1.5
1.5
3.0
1900
-
950
1180
260
-
V/µs
Tj=25°C
V
VD=10V, IT=3A
mA
Tj=25°C
mA
VD=67% VDRM, IT=2000A, di/dt=60A/µs,
IFG=2A, tr=0.5µs, Tj=25°C
µs
µC
µC
ITM=4000A, tp=2000µs, di/dt=60A/µs,
Vr=100V
A
µs
-
7.3
-
-
-
80
60
85
100
-
-
0.008
Double side cooled
K/W
-
-
0.016
Single side cooled
K/W
63
-
77
kN
-
1.23
-
kg
ITM=4000A, tp=2000µs, di/dt=60A/µs,
Vr=100V, Vdr=67%VDRM, dVdr/dt=20V/µs
ITM=4000A, tp=2000µs, di/dt=60A/µs,
Vr=100V, Vdr=67%VDRM, dVdr/dt=200V/µs
Notes:1) Unless otherwise indicated Tj=125°C.
2) The required tq (specified with dVdr/dt=200V/µs) is represented by an ‘x’ in the device part number. See ordering information
for details of tq codes.
Provisional Data Sheet. Types R3047TC24x-28x Issue 2
V
VD=80% VDRM, linear ramp
tq
UNITS
PARAMETER
Page 2 of 12
May, 2001
µs
WESTCODE Positive development in power electronics
R3047TC24x-28x
Notes on Ratings and Characteristics
Voltage Grade
2400
2600
2800
VDRM VDSM VRRM
V
2400
2600
2800
1.0 Voltage Grade Table
VRSM
V
2500
2700
2900
2.0 Extension of Voltage Grades
VD VR
DC V
1450
1550
1650
This report is applicable to other and higher voltage grades when supply has been agreed by
Sales/Production.
3.0 Extension of Turn-off Time
This Report is applicable to other tq/re-applied dv/dt combinations when supply has been agreed by
Sales/Production.
4.0 Repetitive dv/dt
5.0 De-rating Factor
Higher dv/dt selections are available up to 1000V/µs on request.
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C.
6.0 Rate of rise of on-state current
The maximum un-primed rate of rise of on-state current must not exceed 1000A/µs at any time during
turn-on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not
exceed 500A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.
7.0 Square wave ratings
These ratings are given for load component rate of rise of forward current of 100 and 500 A/µs.
8.0 Duty cycle lines
The 100% duty cycle is represented on all the ratings by a straight line. Other duties can be included as
parallel to the first.
9.0 Maximum Operating Frequency
The maximum operating frequency is set by the on-state duty, the time required for the thyristor to turn off
(tq) and for the off-state voltage to reach full value (tv), i.e.
f
max
=
1
tpulse + tq + tv
Provisional Data Sheet. Types R3047TC24x-28x Issue 2
Page 3 of 12
May, 2001
WESTCODE Positive development in power electronics
R3047TC24x-28x
10.0 On-State Energy per Pulse Characteristics
These curves enable rapid estimation of device dissipation to be obtained for conditions not covered by
the frequency ratings.
Let Ep be the Energy per pulse for a given current and pulse width, in joules
Let Rth(J-Hs) be the steady-state d.c. thermal resistance (junction to sink)
and TSINK be the heat sink temperature.
Then the average dissipation will be:
W AV = E P ⋅ f and TSINK (max .) = 125 − (W AV ⋅ Rth ( J − Hs ) )
11.0 Reverse recovery ratings
(i) Qra is based on 50% Irm chord as shown in Fig. 1 below.
Fig. 1
(ii) Qrr is based on a 150µs integration time.
150 µs
i.e.
Qrr =
∫i
rr
.dt
0
K Factor =
(iii)
t1
t2
12.0 Reverse Recovery Loss
12.1 Determination by Measurement
From waveforms of recovery current obtained from a high frequency shunt (see Note 1, Page 5) and
reverse voltage present during recovery, an instantaneous reverse recovery loss waveform must be
constructed. Let the area under this waveform be E joules per pulse. A new heat sink temperature can
then be evaluated from:
TSINK ( new) = TSINK ( original ) − E ⋅ (k + f ⋅ Rth ( J − Hs ) )
where k = 0.227 (°C/W)/s
E = Area under reverse loss waveform per pulse in joules (W.s.)
f = rated frequency Hz at the original heat sink temperature.
Rth(J-Hs) = d.c. thermal resistance (°C/W).
Provisional Data Sheet. Types R3047TC24x-28x Issue 2
Page 4 of 12
May, 2001
WESTCODE Positive development in power electronics
R3047TC24x-28x
The total dissipation is now given by:
W (TOT) = W (original) + E ⋅ f
12.2 Determination without Measurement
In circumstances where it is not possible to measure voltage and current conditions, or for design
purposes, the additional losses E in joules may be estimated as follows.
Let E be the value of energy per reverse cycle in joules (curves in Figure 9).
Let f be the operating frequency in Hz
TSINK (new ) = TSINK (original ) − (E ⋅ Rth ⋅ f )
Where TSINK (new) is the required maximum heat sink temperature and
TSINK (original) is the heat sink temperature given with the frequency ratings.
A suitable R-C snubber network is connected across the thyristor to restrict the transient reverse voltage
to a peak value (Vrm) of 67% of the maximum grade. If a different grade is being used or Vrm is other than
67% of Grade, the reverse loss may be approximated by a pro rata adjustment of the maximum value
obtained from the curves.
NOTE 1- Reverse Recovery Loss by Measurement
This thyristor has a low reverse recovered charge and peak reverse recovery current. When measuring
the charge care must be taken to ensure that:
(a) a.c. coupled devices such as current transformers are not affected by prior passage of high
amplitude forward current.
(b) A suitable, polarised, clipping circuit must be connected to the input of the measuring oscilloscope
to avoid overloading the internal amplifiers by the relatively high amplitude forward current signal
(c) Measurement of reverse recovery waveform should be carried out with an appropriate critically
damped snubber, connected across diode anode to cathode. The formula used for the calculation
of this snubber is shown below:
Vr
CS ⋅ di dt
R2 = 4 ⋅
Where: Vr = Commutating source voltage
CS = Snubber capacitance
R = Snubber resistance
13.0 Gate Drive
The recommended pulse gate drive is 30V, 15Ω with a short-circuit current rise time of not more than
0.5µs. This gate drive must be applied when using the full di/dt capability of the device.
The duration of pulse may need to be configured with respect to the application but should be no shorter
than 20µs, otherwise an increase in pulse current could be needed to supply the resulting increase in
charge to trigger.
Provisional Data Sheet. Types R3047TC24x-28x Issue 2
Page 5 of 12
May, 2001
WESTCODE Positive development in power electronics
R3047TC24x-28x
14.0 Computer Modelling Parameters
14.1 Calculating VT using ABCD Coefficients
The on-state characteristic IT vs VT, on page 7 is represented in two ways;
(i)
the well established V0 and rs tangent used for rating purposes and
(ii)
a set of constants A, B, C, D, forming the coefficients of the representative equation for VT in
terms of IT given below:
VT = A + B ⋅ ln (I T ) + C ⋅ I T + D ⋅ I T
The constants, derived by curve fitting software, are given in this report for hot and cold characteristics
where possible. The resulting values for VT agree with the true device characteristic over a current range,
which is limited to that plotted.
25°C Coefficients
A
1.262553
B
0.140687
125°C Coefficients
-4
C
1.41627×10
D
-9.591208×10
2.08186705
B
-0.1296326
C
1.055787×10
D
0.01335506
-4
-3
A
14.2 D.C. Thermal Impedance Calculation
−t

τ
rt = ∑ rp ⋅ 1 − e p

p =1

p=n




Where p = 1 to n, n is the number of terms in the series.
=
=
=
=
Duration of heating pulse in seconds.
Thermal resistance at time t.
Amplitude of pth term.
Time Constant of rth term.
t
rt
rp
τp
D.C. Double Side Cooled
Term
rp
τp
1
-3
2
3
-3
-3
5.228149×10
3.076205×10
1.977511×10
0.9862513
0.2593041
0.03447094
D.C. Single Side Cooled
Term
rp
τp
1
2
3
0.01186497
3.872272×10
7.361938
1.651253
Provisional Data Sheet. Types R3047TC24x-28x Issue 2
-3
Page 6 of 12
4
-3
-3
3.457033×10
1.694157×10
0.2019036
0.02934724
May, 2001
WESTCODE Positive development in power electronics
R3047TC24x-28x
Curves
Figure 2 - Transient thermal impedance
10000
0.1
Figure 1 - On-state characteristics of Limit device
SSC 0.016K/W
1000
DSC 0.008K/W
Tj = 25°C
Transient Thermal Impedance - Z (th)t (K/W)
Instantaneous on-state current - I T (A)
0.01
Tj = 125°C
0.001
0.0001
R3047TC24x-28x
AD Issue 2
100
1
1.5
2
2.5
3
0.00001
0.0001
3.5
Instantaneous on-state voltage - VT (V)
Figure 3 - Gate characteristics - Trigger limits
R3047TC24x-28x
AD Issue 2
0.001
0.01
0.1
1
10
100
Time (s)
Figure 4 - Gate characteristics - Power curves
20
8
R3047TC24x-28x
AD Issue 2
Tj=25°C
R3047TC24x-28x
AD Issue 2
Tj=25°C
18
7
16
Max VG dc
5
Max VG dc
14
Gate Trigger Voltage - V GT (V)
Gate Trigger Voltage - V GT (V)
6
4
IGT, VGT
3
12
10
8
PG Max 30W dc
6
-40°C
-10°C
25°C
125°C
2
4
Min VG dc
1
0
0
0.25
0.5
0.75
1
1.25
0
1.5
2
4
6
8
10
Gate Trigger Current - IGT (A)
Gate Trigger Current - IGT (A)
Provisional Data Sheet. Types R3047TC24x-28x Issue 2
Min VG dc
2
IGD, VGD
0
PG 4W dc
Page 7 of 12
May, 2001
WESTCODE Positive development in power electronics
R3047TC24x-28x
Figure 5 - Total recovered charge, Qrr
Figure 6 - Recovered charge, Qra (50% chord)
10000
10000
4000A
2000A
4000A
2000A
1000A
1000A
100
1000
Tj = 125°C
Tj = 125°C
R3047TC24x-28x
AD Issue 2
R3047TC24x-28x
AD Issue 2
100
10
100
1000
10
Commutation rate - di/dt (A/µs)
Figure 7 - Peak reverse recovery current, Irm
100
1000
Commutation rate - di/dt (A/µs)
Figure 8 - Maximum recovery time, trr (50% chord)
10
4000A
2000A
1000A
500A
1000
100
1000A
500A
Tj = 125°C
Tj = 125°C
R3047TC24x-28x
AD Issue 2
100
1
10
1000
100
1000
Commutation rate - di/dt (A/µs)
Commutation rate - di/dt (A/µs)
Provisional Data Sheet. Types R3047TC24x-28x Issue 2
2000A
R3047TC24x-28x
AD Issue 2
10
10
4000A
Reverse recovery time - t rr (µs)
10000
Reverse recovery current - I rm (A)
500A
Recovered charge - Q ra (µC)
1000
Total recovered charge - Q rr (µC)
500A
Page 8 of 12
May, 2001
WESTCODE Positive development in power electronics
R3047TC24x-28x
10000
Figure 10 - Sine wave energy per pulse
1.00E+03
R3047TC24x-28x
AD Issue 2
Tj = 125°C
R3047TC24x-28x
AD Issue 2
Tj=125°C
Vr=400V
Measured
without
snubber
4000A
1.00E+02
1000A
Energy per pulse (J)
500A
2000A
Reverse energy per pulse - Er (mJ)
Figure 9 – Reverse Recovery Energy
1000
1.00E+01
8000A
6000A
4000A
1.00E+00
2000A
1000A
1.00E-01
500A
100
10
100
1.00E-02
1.00E-05
1000
1.00E-04
di/dt (A/µs)
Figure 11 - Sine wave frequency ratings
1.00E+05
1.00E-03
Figure 12 - Sine wave frequency ratings
1.00E+05
R3047TC24x-28x
AD Issue 2
THs=85°C
R3047TC24x-28x
AD Issue 2
1000A
1.00E-02
Pulse width (s)
THs=55°C
1000A
100% Duty Cycle
100% Duty Cycle
2000A
1.00E+04
2000A
4000A
1.00E+03
Frequency (Hz)
Frequency (Hz)
1.00E+04
6000A
8000A
1.00E-04
1.00E-03
6000A
1.00E+02
1.00E+01
1.00E-05
1.00E-02
1.00E-04
1.00E-03
1.00E-02
Pulse width (s)
Pulse Width (s)
Provisional Data Sheet. Types R3047TC24x-28x Issue 2
4000A
8000A
1.00E+02
1.00E+01
1.00E-05
1.00E+03
Page 9 of 12
May, 2001
WESTCODE Positive development in power electronics
R3047TC24x-28x
Figure 14 - Square wave frequency ratings
1.00E+05
1.00E+05
Figure 13 - Square wave frequency ratings
R3047TC24x-28x
AD Issue 2
di/dt=500A/µs
100% Duty Cycle
THs=55°C
1000A
2000A
100% Duty Cycle
1.00E+04
1.00E+04
2000A
Frequency (Hz)
Frequency (Hz)
4000A
6000A
1.00E+03
8000A
1.00E+03
6000A
8000A
1.00E+02
THs=55°C
1.00E+02
4000A
di/dt=100A/µs
R3047TC24x-28x
AD Issue 2
1.00E+01
1.00E-05
1.00E-04
1.00E-03
1.00E+01
1.00E-05
1.00E-02
1.00E-04
Pulse width (s)
Figure 15 - Square wave frequency ratings
1.00E+05
1.00E-03
1.00E-02
Pulse width (s)
Figure 16 - Square wave frequency ratings
1.00E+05
500A
1000A
100% Duty Cycle
100% Duty Cycle
1.00E+04
2000A
4000A
1.00E+03
1000A
2000A
Frequency (Hz)
Frequency (Hz)
1.00E+04
6000A
8000A
1.00E+03
4000A
6000A
8000A
1.00E+02
1.00E+02
THs=85°C
THs=85°C
di/dt=100A/µs
R3047TC24x-28x
AD Issue 2
di/dt=500A/µs
1.00E+01
1.00E-05
1.00E-04
1.00E-03
R3047TC24x-28x
AD Issue 2
1.00E-02
Pulse width (s)
Provisional Data Sheet. Types R3047TC24x-28x Issue 2
1.00E+01
1.00E-05
1.00E-04
1.00E-03
1.00E-02
Pulse width (s)
Page 10 of 12
May, 2001
WESTCODE Positive development in power electronics
R3047TC24x-28x
1.00E+03
Figure 18 - Square wave energy per pulse
1.00E+03
R3047TC24x-28x
AD Issue 2
di/dt=100A/µs
Figure 17 - Square wave energy per pulse
R3047TC24x-28x
AD Issue 2
di/dt=500A/µs
Tj=125°C
Tj=125°C
1.00E+02
1.00E+02
1.00E+01
Energy per pulse (J)
Energy per pulse (J)
8000A
6000A
4000A
8000A
6000A
4000A
1.00E+00
2000A
1000A
500A
1.00E-02
1.00E-05
1.00E+00
2000A
1000A
500A
1.00E-01
1.00E-01
1.00E+01
1.00E-04
1.00E-03
1.00E-02
1.00E-05
1.00E-02
1.00E-04
Pulse width (s)
1.00E-03
1.00E-02
Pulse width (s)
2
Figure 19 - Maximum surge and I t Ratings
Gate may temporarily lose control of conduction angle
1.00E+09
R3047TC24x-28x
AD Issue 2
Tj (initial) = 125°C
2
I t: VRRM≤10V
100000
1.00E+08
2
I t: 60% VRRM
ITSM: VRRM≤10V
ITSM: 60% VRRM
10000
1000
1
3
5
10
Duration of surge (ms)
Provisional Data Sheet. Types R3047TC24x-28x Issue 2
1
5
10
50
100
1.00E+07
Maximum I2t (A2s)
Total peak half sine surge current - I TSM (A)
1000000
1.00E+06
Duration of surge (cycles @ 50Hz)
Page 11 of 12
May, 2001
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R3047TC24x-28x
Outline Drawing & Ordering Information
ORDERING INFORMATION
R3047
TC
Fixed
Type Code
Fixed
Outline Code
(Please quote 10 digit code as below)
♦♦
Off-state Voltage Code
VDRM/100
40-45
Typical order code: R3047TC26 – 2600V VDRM, VRRM, 300µs tq, 27.1mm clamp height capsule.
WESTCODE
♦
tq Code
K=60µs, L=65µs,
M=70µs, N=100µs
UK: Westcode Semiconductors Ltd.
P.O. Box 57, Chippenham, Wiltshire, England. SN15 1JL.
Tel: +44 (0) 1249 444524 Fax: +44 (0) 1249 659448
E-Mail: [email protected]
USA: Westcode Semiconductors Inc.
3270 Cherry Avenue, Long Beach, California 90807
Tel: 562 595 6971 Fax: 562 595 8182
E-Mail: [email protected]
Internet: http://www.westcode.com
The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed
except with the written permission of and in the manner permitted by the proprietors Westcode Semiconductors Ltd.
© Westcode Semiconductors Ltd.
In the interest of product improvement, Westcode reserves the right to change specifications at any time without prior notice.
Devices with a suffix code (2-letter or letter/digit/letter combination) added to their generic code are not necessarily subject to
the conditions and limits contained in this report.
Provisional Data Sheet. Types R3047TC24x-28x Issue 2
Page 12 of 12
May, 2001