Distributed Gate Thyristor Type R3370ZC10# to

Date:- 13 May, 2003
Data Sheet Issue:- 1
Distributed Gate Thyristor
Type R3370ZC10# to R3370ZC12#
Old Type No.: R1200CH10-12
Absolute Maximum Ratings
VOLTAGE RATINGS
MAXIMUM
LIMITS
UNITS
VDRM
Repetitive peak off-state voltage, (note 1)
1000-1200
V
VDSM
Non-repetitive peak off-state voltage, (note 1)
1000-1200
V
VRRM
Repetitive peak reverse voltage, (note 1)
1000-1200
V
VRSM
Non-repetitive peak reverse voltage, (note 1)
1100-1300
V
MAXIMUM
LIMITS
UNITS
OTHER RATINGS
IT(AV)M
Maximum mean on-state current, Tsink=55°C, (note 2)
3370
A
IT(AV)M
Maximum mean on-state current. Tsink=85°C, (note 2)
2145
A
IT(AV)M
Maximum mean on-state current. Tsink=85°C, (note 3)
1179
A
IT(RMS)M
Nominal RMS on-state current, Tsink=25°C, (note 2)
6850
A
IT(d.c.)
D.C. on-state current, Tsink=25°C, (note 4)
5360
A
ITSM
Peak non-repetitive surge tp=10ms, VRM=0.6VRRM, (note 5)
43.9
kA
ITSM2
Peak non-repetitive surge tp=10ms, VRM≤10V, (note 5)
48.3
2
I t capacity for fusing tp=10ms, VRM=0.6VRRM, (note 5)
2
I t capacity for fusing tp=10ms, VRM≤10V, (note 5)
It
It
diT/dt
kA
2
6
9.64×10
2
11.66×10
6
2
As
2
As
Maximum rate of rise of on-state current (repetitive), (Note 6)
1000
A/µs
Maximum rate of rise of on-state current (non-repetitive), (Note 6)
1500
A/µs
VRGM
Peak reverse gate voltage
5
V
PG(AV)
Mean forward gate power
5
W
PGM
Peak forward gate power
50
W
THS
Operating temperature range
-40 to +125
°C
Tstg
Storage temperature range
-40 to +150
°C
Notes:1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.
4) Double side cooled.
5) Half-sinewave, 125°C Tj initial.
6) VD=67% VDRM, IFG=2A, tr≤0.5µs, Tcase=125°C.
Data Sheet. Type R3370ZC10# to R3370ZC12# Issue 1
Page 1 of 12
May, 2003
WESTCODE An IXYS Company
Distributed Gate Thyristor Types R3370ZC10# to R3370ZC12
Characteristics
PARAMETER
MIN.
TYP.
MAX. TEST CONDITIONS (Note 1)
UNITS
VTM
Maximum peak on-state voltage
-
-
1.54
ITM=4000A
V
VTM
Maximum peak on-state voltage
-
-
1.95
ITM=10100A
V
V0
Threshold voltage
-
-
1.353
V
rS
Slope resistance
-
-
0.064
mΩ
dv/dt
Critical rate of rise of off-state voltage
200
-
-
IDRM
Peak off-state current
-
-
IRRM
Peak reverse current
-
VGT
Gate trigger voltage
IGT
VD=80% VDRM, Linear ramp, Gate o/c
V/µs
300
Rated VDRM
mA
-
300
Rated VRRM
mA
-
-
3.0
Gate trigger current
-
-
300
VGD
Non-trigger gate voltage
-
-
0.25
Rated VDRM
IH
Holding current
-
-
1000
Tj=25°C
mA
tgd
Gate controlled turn-on delay time
-
0.7
1.5
tgt
Turn-on time
-
1.5
3.0
VD=67% VDRM, ITM=1000A, di/dt=60A/µs,
IFG=2A, tr=0.5µs, Tj=25°C
µs
Qrr
Recovered charge
-
600
-
Qra
Recovered charge, 50% Chord
-
240
300
Irm
Reverse recovery current
-
135
-
trr
Reverse recovery time
-
3.5
-
12
-
20
15
-
25
-
-
0.011
Double side cooled
K/W
-
-
0.022
Single side cooled
K/W
27
-
47
kN
-
1.7
-
kg
tq
Turn-off time (note 2)
Rth(j-hs)
Thermal resistance, junction to heatsink
F
Mounting force
Wt
Weight
Tj=25°C
V
VD=10V, IT=3A
mA
V
µC
µC
ITM=4000A, tp=1000µs, di/dt=60A/µs,
Vr=50V
A
µs
ITM=4000A, tp=1000µs, di/dt=60A/µs,
Vr=50V, Vdr=33%VDRM, dVdr/dt=20V/µs
ITM=4000A, tp=1000µs, di/dt=60A/µs,
Vr=50V, Vdr=33%VDRM, dVdr/dt=200V/µs
Notes:1) Unless otherwise indicated Tj=125°C.
2) The required tq (specified with dVdr/dt=200V/µs) is represented by an ‘#’ in the device part number. See ordering information
for details of tq codes.
Data Sheet. Type R3370ZC10# to R3370ZC12# Issue 1
Page 2 of 12
May, 2003
µs
WESTCODE An IXYS Company
Distributed Gate Thyristor Types R3370ZC10# to R3370ZC12
Notes on Ratings and Characteristics
1.0 Voltage Grade Table
VDRM VDSM VRRM
V
1000
1200
Voltage Grade
10
12
VRSM
V
1100
1300
VD VR
DC V
700
810
2.0 Extension of Voltage Grades
This report is applicable to other and higher voltage grades when supply has been agreed by
Sales/Production.
3.0 Extension of Turn-off Time
This Report is applicable to other tq/re-applied dv/dt combinations when supply has been agreed by
Sales/Production.
4.0 Repetitive dv/dt
Higher dv/dt selections are available up to 1000V/µs on request.
5.0 De-rating Factor
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C.
6.0 Snubber Components
When selecting snubber components, care must be taken not to use excessively large values of snubber
capacitor or excessively small values of snubber resistor. Such excessive component values may lead to
device damage due to the large resultant values of snubber discharge current. If required, please consult
the factory for assistance.
7.0 Rate of rise of on-state current
The maximum un-primed rate of rise of on-state current must not exceed 1500A/µs at any time during
turn-on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not
exceed 1000A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.
8.0 Gate Drive
The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least 30V
is assumed. This gate drive must be applied when using the full di/dt capability of the device.
IGM
4A/µs
IG
tp1
The magnitude of IGM should be between five and ten times IGT, which is shown on page 2. Its duration
(tp1) should be 20µs or sufficient to allow the anode current to reach ten times IL, whichever is greater.
Otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. The
‘back-porch’ current IG should remain flowing for the same duration as the anode current and have a
magnitude in the order of 1.5 times IGT.
9.0 Frequency Ratings
Data Sheet. Type R3370ZC10# to R3370ZC12# Issue 1
Page 3 of 12
May, 2003
WESTCODE An IXYS Company
Distributed Gate Thyristor Types R3370ZC10# to R3370ZC12
The curves illustrated in figures 10 to 18 are for guidance only and are superseded by the maximum
ratings shown on page 1.
10.0 Square wave ratings
These ratings are given for load component rate of rise of forward current of 100 and 500A/µs.
11.0 Duty cycle lines
The 100% duty cycle is represented on all the ratings by a straight line. Other duties can be included as
parallel to the first.
12.0 Maximum Operating Frequency
The maximum operating frequency is set by the on-state duty, the time required for the thyristor to turn off
(tq) and for the off-state voltage to reach full value (tv), i.e.
f
max
=
1
tpulse + tq + tv
13.0 On-State Energy per Pulse Characteristics
These curves enable rapid estimation of device dissipation to be obtained for conditions not covered by
the frequency ratings.
Let Ep be the Energy per pulse for a given current and pulse width, in joules
Let RthJK be the steady-state d.c. thermal resistance (junction to sink)
and TSINK be the heat sink temperature.
Then the average dissipation will be:
W AV = E P ⋅ f and TSINK (max .) = 125 − (W AV ⋅ RthJK )
14.0 Reverse recovery ratings
(i) Qra is based on 50% Irm chord as shown in Fig. 1
Fig. 1
150 µs
(ii) Qrr is based on a 150µs integration time i.e.
Qrr =
∫i
rr
.dt
0
(iii)
K Factor =
t1
t2
15.0 Reverse Recovery Loss
Data Sheet. Type R3370ZC10# to R3370ZC12# Issue 1
Page 4 of 12
May, 2003
WESTCODE An IXYS Company
Distributed Gate Thyristor Types R3370ZC10# to R3370ZC12
15.1 Determination by Measurement
From waveforms of recovery current obtained from a high frequency shunt (see Note 1, Page 5) and
reverse voltage present during recovery, an instantaneous reverse recovery loss waveform must be
constructed. Let the area under this waveform be E joules per pulse. A new heat sink temperature can
then be evaluated from the following:
TSINK ( new) = TSINK ( original ) − E ⋅ (k + f ⋅ Rth ( J − Hs ) )
Where k=0.227 (°C/W)/s
E = Area under reverse loss waveform per pulse in joules (W.s.)
f = rated frequency Hz at the original heat sink temperature.
Rth(J-Hs) = d.c. thermal resistance (°C/W).
The total dissipation is now given by:
W (TOT) = W (original) + E ⋅ f
15.2 Determination without Measurement
In circumstances where it is not possible to measure voltage and current conditions, or for design
purposes, the additional losses E in joules may be estimated as follows.
Let E be the value of energy per reverse cycle in joules (curves in Figure 9).
Let f be the operating frequency in Hz
TSINK (new ) = TSINK (original ) − (E ⋅ Rth ⋅ f )
Where TSINK (new) is the required maximum heat sink temperature and
TSINK (original) is the heat sink temperature given with the frequency ratings.
A suitable R-C snubber network is connected across the thyristor to restrict the transient reverse voltage
to a peak value (Vrm) of 67% of the maximum grade. If a different grade is being used or Vrm is other than
67% of Grade, the reverse loss may be approximated by a pro rata adjustment of the maximum value
obtained from the curves.
NOTE 1- Reverse Recovery Loss by Measurement
This thyristor has a low reverse recovered charge and peak reverse recovery current. When measuring
the charge, care must be taken to ensure that:
(a) a.c. coupled devices such as current transformers are not affected by prior passage of high
amplitude forward current.
(b) A suitable, polarised, clipping circuit must be connected to the input of the measuring oscilloscope
to avoid overloading the internal amplifiers by the relatively high amplitude forward current signal
(c) Measurement of reverse recovery waveform should be carried out with an appropriate critically
damped snubber, connected across diode anode to cathode. The formula used for the calculation
of this snubber is shown below:
R2 = 4 ⋅
Vr
CS ⋅ di dt
Where:
Data Sheet. Type R3370ZC10# to R3370ZC12# Issue 1
Vr
CS
R
= Commutating source voltage
= Snubber capacitance
= Snubber resistance
Page 5 of 12
May, 2003
WESTCODE An IXYS Company
Distributed Gate Thyristor Types R3370ZC10# to R3370ZC12
16.0 Computer Modelling Parameters
16.1 Calculating VT using ABCD Coefficients
The on-state characteristic IT vs VT, on page 7 can be represented in two ways;
(i)
the well established VT0 and rT tangent used for rating purposes and
(ii)
a set of constants A, B, C, D, forming the coefficients of the representative equation for VT in
terms of IT given below:
VT = A + B ⋅ ln (I T ) + C ⋅ I T + D ⋅ I T
The constants, derived by curve fitting software, are given in this report for hot and cold characteristics.
The resulting values for VT agree with the true device characteristic over a current range, which is limited
to that plotted.
25°C Coefficients
A
125°C Coefficients
2.2410365
B
A
1.1854785
-3
B
0.08935579
-4
C
1.484966×10
-3
D
-0.01550443
-6.580221×10
C
1.055932×10
D
-5.499580×10
-4
16.2 D.C. Thermal Impedance Calculation
−t

τ
rt = ∑ rp ⋅ 1 − e p

p =1





p=n
Where p = 1 to n, n is the number of terms in the series.
t
rt
rp
τp
=
=
=
=
Duration of heating pulse in seconds.
Thermal resistance at time t.
Amplitude of pth term.
Time Constant of rth term.
D.C. Single Side Cooled
Term
1
2
3
-3
4
-3
5
-4
6
-4
-4
rp
0.0142
2.34×10
3.39×10
8.87×10
6.00×10
4.66×10
τp
9.25
2.07957
0.23675
0.07935
0.0107
2.89×10
-3
D.C. Double Side Cooled
Term
1
2
-3
3
-3
4
-3
-4
rp
5.60×10
2.81×10
1.42×10
9.34×10
τp
1.593884
0.28583
0.07721
4.84×10
Data Sheet. Type R3370ZC10# to R3370ZC12# Issue 1
Page 6 of 12
-3
May, 2003
WESTCODE An IXYS Company
Distributed Gate Thyristor Types R3370ZC10# to R3370ZC12
Curves
Figure 1 - On-state characteristics of Limit device
10000
Figure 2 - Transient thermal impedance
0.1
R3370ZC10#-12#
Issue 1
R3370ZC10#-12#
Issue 1
Tj = 125°C
Tj = 25°C
SSC 0.022K/W
Instantaneous on-state current - I
T
Transient Thermal Impedance - Z (th)t (K/W)
(A)
0.01
1000
DSC 0.011K/W
0.001
0.0001
100
0
0.5
1
1.5
2
2.5
0.00001
0.0001
3
Instantaneous on-state voltage - VT (V)
0.01
0.1
1
10
100
Time (s)
Figure 3 - Gate characteristics - Trigger limits
7
0.001
Figure 4 - Gate characteristics - Power curves
20
R3370ZC10#-12#
Issue 1
Tj=25°C
R3370ZC10#-12#
Issue 1
Tj=25°C
18
6
16
Max VG dc
14
Max VG dc
Gate Trigger Voltage - VGT (V)
Gate Trigger Voltage - VGT (V)
5
4
IGT, VGT
3
12
10
8
PG Max 30W dc
6
-40°C
-10°C
25°C
125°C
2
PG 5W dc
4
Min VG dc
1
Min VG dc
2
IGD, VGD
0
0
0
0.2
0.4
0.6
0.8
0
1
Data Sheet. Type R3370ZC10# to R3370ZC12# Issue 1
2
4
6
8
10
Gate Trigger Current - IGT (A)
Gate Trigger Current - IGT (A)
Page 7 of 12
May, 2003
WESTCODE An IXYS Company
Distributed Gate Thyristor Types R3370ZC10# to R3370ZC12
Figure 5 - Total recovered charge, Qrr
10000
10000
R3370ZC10#-12#
Issue 1
R3370ZC10#-12#
Issue 1
Tj = 125°C
Tj = 125°C
4kA
3kA
2kA
1kA
1000
100
100
10
10
100
1000
10
Commutation rate - di/dt (A/µs)
100
Figure 8 - Maximum recovery time, trr (50% chord)
10
1000
R3370ZC10#-12#
Issue 1
R3370ZC10#-12#
Issue 1
Tj = 125°C
1000
Commutation rate - di/dt (A/µs)
Figure 7 - Peak reverse recovery current, Irm
Tj = 125°C
4kA
3kA
2kA
1kA
Reverse recovery time - t rr (µs)
Reverse recovery current - I rm (A)
4kA
3kA
2kA
1kA
1000
Recovered charge - Q ra (µC)
Total recovered charge - Q rr (µC)
Figure 6 - Recovered charge, Qra (50% chord)
100
4kA
3kA
2kA
1kA
1
10
10
100
10
1000
Commutation rate - di/dt (A/µs)
Data Sheet. Type R3370ZC10# to R3370ZC12# Issue 1
100
1000
Commutation rate - di/dt (A/µs)
Page 8 of 12
May, 2003
WESTCODE An IXYS Company
Distributed Gate Thyristor Types R3370ZC10# to R3370ZC12
Figure 9 - Reverse recovery energy per pulse
1000
Figure 10 - Sine wave energy per pulse
1.00E+02
R3370ZC10#-12#
Issue 1
Vrm =0.67%VDRM
R3370ZC10#-12#
Issue 1
Tj=125°C
Tj = 125°C
Snubber
0.5µF, 6Ω
4kA
1.00E+01
3kA
8kA
Energy per pulse (J)
Energy per pulse - E r (J)
2kA
1kA
6kA
1.00E+00
4kA
2kA
1.00E-01
1kA
500A
1.00E-02
1.00E-05
100
10
100
1000
1.00E-04
Commutation rate - di/dt (A/µs)
Figure 11 - Sine wave frequency ratings
1.00E+05
1.00E-03
1.00E-02
Pulse width (s)
Figure 12 - Sine wave frequency ratings
1.00E+05
R3370ZC10#-12#
Issue 1
R3370ZC10#-12#
Issue 1
1kA
THs=85°C
THs=55°C
100% Duty Cycle
100% Duty Cycle
2kA
1.00E+04
1.00E+04
2kA
1.00E+03
Frequency (Hz)
Frequency (Hz)
4kA
6kA
4kA
1.00E+03
6kA
8kA
8kA
1.00E+02
1.00E+02
1.00E+01
1.00E-05
1.00E-04
1.00E-03
1.00E+01
1.00E-05
1.00E-02
Data Sheet. Type R3370ZC10# to R3370ZC12# Issue 1
1.00E-04
1.00E-03
1.00E-02
Pulse width (s)
Pulse Width (s)
Page 9 of 12
May, 2003
WESTCODE An IXYS Company
Distributed Gate Thyristor Types R3370ZC10# to R3370ZC12
Figure 13 - Square wave frequency ratings
1.00E+05
Figure 14 - Square wave frequency ratings
1.00E+05
R3370ZC10#-12#
Issue 1
2kA
R3370ZC10#-12#
Issue 1
1kA
di/dt=100A/µs
di/dt=500A/µs
THs=55°C
THs=55°C
100% Duty Cycle
100% Duty Cycle
1.00E+04
1.00E+04
2kA
4kA
6kA
Frequency (Hz)
Frequency (Hz)
4kA
8kA
1.00E+03
6kA
1.00E+03
8kA
1.00E+02
1.00E+02
1.00E+01
1.00E-05
1.00E-04
1.00E-03
1.00E+01
1.00E-05
1.00E-02
Figure 15 - Square wave frequency ratings
1.00E+05
1.00E+05
di/dt=100A/µs
di/dt=500A/µs
THs=85°C
THs=85°C
100% Duty Cycle
2kA
1.00E-02
R3370ZC10#-12#
Issue 1
1kA
1.00E+04
1.00E-03
Figure 16 - Square wave frequency ratings
R3370ZC10#-12#
Issue 1
1kA
1.00E-04
Pulse width (s)
Pulse width (s)
100% Duty Cycle
1.00E+04
2kA
1.00E+03
Frequency (Hz)
Frequency (Hz)
4kA
6kA
8kA
4kA
1.00E+03
6kA
8kA
1.00E+02
1.00E+01
1.00E-05
1.00E+02
1.00E-04
1.00E-03
1.00E-02
Pulse width (s)
Data Sheet. Type R3370ZC10# to R3370ZC12# Issue 1
1.00E+01
1.00E-05
1.00E-04
1.00E-03
1.00E-02
Pulse width (s)
Page 10 of 12
May, 2003
WESTCODE An IXYS Company
Distributed Gate Thyristor Types R3370ZC10# to R3370ZC12
Figure 17 - Square wave energy per pulse
1.00E+03
Figure 18 - Square wave energy per pulse
1.00E+03
R3370ZC10#-12#
Issue 1
R3370ZC10#-12#
Issue 1
di/dt=500A/µs
di/dt=100A/µs
Tj=125°C
Tj=125°C
1.00E+02
1.00E+02
1.00E+01
Energy per pulse (J)
Energy per pulse (J)
8kA
6kA
4kA
8kA
6kA
4kA
1.00E+00
1.00E+01
1.00E+00
2kA
1kA
500A
2kA
1.00E-01
1.00E-01
1kA
500A
1.00E-02
1.00E-05
1.00E-04
1.00E-03
1.00E-02
1.00E-05
1.00E-02
1.00E-04
Pulse width (s)
1.00E-03
1.00E-02
Pulse width (s)
2
Figure 19 - Maximum surge and I t Ratings
Gate may temporarily lose control of conduction angle
1.00E+08
R3370ZC10#-12#
Issue 1
I2t: VRRM≤10V
2
I t: 60% VRRM
Tj (initial) = 125°C
1.00E+07
100000
Maximum I2t (A2s)
Total peak half sine surge current - I TSM (A)
1000000
ITSM: VRRM≤10V
ITSM: 60% VRRM
10000
1
3
5
10
Duration of surge (ms)
Data Sheet. Type R3370ZC10# to R3370ZC12# Issue 1
1
5
10
50 100
1.00E+06
Duration of surge (cycles @ 50Hz)
Page 11 of 12
May, 2003
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Distributed Gate Thyristor Types R3370ZC10# to R3370ZC12
Outline Drawing & Ordering Information
101A281
ORDERING INFORMATION
(Please quote 10 digit code as below)
♦♦
R3370
ZC
Fixed
Type Code
Fixed
Outline Code
#
Fixed Voltage Code
VDRM/100
10-12
Typical order code: R3370ZC12D – 1200V VDRM, VRRM, 20µs tq, 37.7mm clamp height capsule.
tq Code
C=15µs, D=20µs, E=25µs
IXYS Semiconductor GmbH
Edisonstraße 15
D-68623 Lampertheim
Tel: +49 6206 503-0
Fax: +49 6206 503-627
E-mail: [email protected]
Westcode Semiconductors Ltd
Langley Park Way, Langley Park,
Chippenham, Wiltshire, SN15 1GE.
Tel: +44 (0)1249 444524
Fax: +44 (0)1249 659448
E-mail: WSL.sales@westcode,com
IXYS Corporation
3540 Bassett Street
Santa Clara CA 95054 USA
Tel: +1 (408) 982 0700
Fax: +1 (408) 496 0670
E-mail: [email protected]
Westcode Semiconductors Inc
3270 Cherry Avenue
Long Beach CA 90807 USA
Tel: +1 (562) 595 6971
Fax: +1 (562) 595 8182
E-mail: [email protected]
www.westcode.com
www.ixys.com
The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed
except with the written permission of and in the manner permitted by the proprietors Westcode Semiconductors Ltd.
© Westcode Semiconductors Ltd.
In the interest of product improvement, Westcode reserves the right to change specifications at any time without prior notice.
Devices with a suffix code (2-letter, 3-letter or letter/digit/letter combination) added to their generic code are not necessarily
subject to the conditions and limits contained in this report.
Data Sheet. Type R3370ZC10# to R3370ZC12# Issue 1
Page 12 of 12
May, 2003