Distributed Gate Thyristor Types R1275NC14x to

Date:- 01 August 2012
Data Sheet Issue:- 3
Distributed Gate Thyristor
Types R1275NC14x to R1275NC21x
Absolute Maximum Ratings
VOLTAGE RATINGS
MAXIMUM
LIMITS
UNITS
VDRM
Repetitive peak off-state voltage, (note 1)
1400-2100
V
VDSM
Non-repetitive peak off-state voltage, (note 1)
1400-2100
V
VRRM
Repetitive peak reverse voltage, (note 1)
1400-1800
V
VRSM
Non-repetitive peak reverse voltage, (note 1)
1500-1900
V
MAXIMUM
LIMITS
UNITS
OTHER RATINGS
IT(AV)M
Maximum average on-state current, Tsink=55°C, (note 2)
1275
A
IT(AV)M
Maximum average on-state current. Tsink=85°C, (note 2)
861
A
IT(AV)M
Maximum average on-state current. Tsink=85°C, (note 3)
508
A
IT(RMS)
Nominal RMS on-state current, Tsink=25°C, (note 2)
2541
A
IT(d.c.)
D.C. on-state current, Tsink=25°C, (note 4)
2147
A
ITSM
Peak non-repetitive surge tp=10ms, Vrm=0.6VRRM, (note 5)
15.5
kA
ITSM2
Peak non-repetitive surge tp=10ms, Vrm≤10V, (note 5)
2
17
kA
It
I t capacity for fusing tp=10ms, Vrm=0.6VRRM, (note 5)
1.20×10
A2s
I2 t
I2t capacity for fusing tp=10ms, Vrm≤10V, (note 5)
1.45×106
A2s
Critical rate of rise of on-state current (repetitive), (Note 6)
1000
A/µs
Critical rate of rise of on-state current (non-repetitive), (Note 6)
1500
A/µs
(di/dt)cr
2
6
VRGM
Peak reverse gate voltage
5
V
PG(AV)
Mean forward gate power
2
W
PGM
Peak forward gate power
30
W
Tj op
Operating temperature range
-40 to +125
°C
Tstg
Storage temperature range
-40 to +150
°C
Notes:1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.
4) Double side cooled.
5) Half-sinewave, 125°C Tj initial.
6) VD=67% VDRM, IFG=2A, tr≤0.5µs, Tcase=125°C.
Data Sheet. Types R1275NC14x to R1275NC21x Issue 3
Page 1 of 12
August 2012
Distributed Gate Thyristor Types R1275NC14x to R1275NC21x
Characteristics
PARAMETER
MIN.
TYP.
MAX. TEST CONDITIONS (Note 1)
UNITS
VTM
Maximum peak on-state voltage
-
-
1.9
ITM=2000A
V
VTM
Maximum peak on-state voltage
-
-
2.45
ITM=3825A
V
VT0
Threshold voltage
-
-
1.207
V
rT
Slope resistance
-
-
0.342
mΩ
200
-
-
(dv/dt)cr Critical rate of rise of off-state voltage
VD=80% VDRM, Linear ramp, Gate o/c
V/µs
IDRM
Peak off-state current
-
-
150
Rated VDRM
mA
IRRM
Peak reverse current
-
-
150
Rated VRRM
mA
VGT
Gate trigger voltage
-
-
3.0
IGT
Gate trigger current
-
-
300
VGD
Gate non-trigger voltage
-
-
0.25
Rated VDRM
IH
Holding current
-
-
1000
Tj=25°C
mA
tgd
Gate controlled turn-on delay time
-
0.4
1.0
tgt
Turn-on time
-
1.0
2.0
VD=67% VDRM, IT=2000A, di/dt=60A/µs,
IFG=2A, tr=0.5µs, Tj=25°C
µs
Qrr
Recovered charge
-
940
-
Qra
Recovered charge, 50% Chord
-
420
500
Irm
Reverse recovery current
-
188
-
trr
Reverse recovery time
-
5.0
-
55
-
60
65
-
70
-
-
0.024
Double side cooled
K/W
-
-
0.048
Single side cooled
K/W
19
-
26
kN
-
510
-
g
tq
Turn-off time (note 2)
RthJK
Thermal resistance, junction to heatsink
F
Mounting force
Wt
Weight
Tj=25°C
V
VD=10V, IT=3A
mA
V
µC
ITM=1000A, tp=1000µs, di/dt=60A/µs,
Vr=50V
Page 2 of 12
A
µs
ITM=1000A, tp=1000µs, di/dt=60A/µs,
Vr=50V, Vdr=80%VDRM, dVdr/dt=20V/µs
ITM=1000A, tp=1000µs, di/dt=60A/µs,
Vr=50V, Vdr=80%VDRM, dVdr/dt=200V/µs
Notes:1) Unless otherwise indicated Tj=125°C.
2) The required tq (specified with dVdr/dt=200V/µs) is represented by a ‘#’ in the device part number. See ordering information for
details of tq codes.
Data Sheet. Types R1275NC14x to R1275NC21x Issue 3
µC
August 2012
µs
Distributed Gate Thyristor Types R1275NC14x to R1275NC21x
Notes on Ratings and Characteristics
1.0 Voltage Grade Table
Voltage Grade
14
16
18
20
21
VDRM VDSM
V
1400
1600
1800
2000
2100
VRRM
V
1400
1600
1800
1800
1800
VRSM
V
1500
1700
1900
1900
1900
VD
DC V
930
1040
1150
1250
1300
VR
DC V
930
1040
1150
1150
1150
2.0 Extension of Voltage Grades
This report is applicable to other and higher voltage grades when supply has been agreed by
Sales/Production.
3.0 Extension of Turn-off Time
This Report is applicable to other tq/re-applied dv/dt combinations when supply has been agreed by
Sales/Production.
4.0 Repetitive dv/dt
Higher dv/dt selections are available up to 1000V/µs on request.
5.0 De-rating Factor
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C.
6.0 Snubber Components
When selecting snubber components, care must be taken not to use excessively large values of snubber
capacitor or excessively small values of snubber resistor. Such excessive component values may lead to
device damage due to the large resultant values of snubber discharge current. If required, please consult
the factory for assistance.
7.0 Rate of rise of on-state current
The maximum un-primed rate of rise of on-state current must not exceed 1500A/µs at any time during
turn-on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not
exceed 1000A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.
8.0 Gate Drive
The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least
30V is assumed. This gate drive must be applied when using the full di/dt capability of the device.
IGM
4A/µs
IG
tp1
The magnitude of IGM should be between five and ten times IGT, which is shown on page 2. Its duration
(tp1) should be 20µs or sufficient to allow the anode current to reach ten times IL, whichever is greater.
Otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. The
‘back-porch’ current IG should remain flowing for the same duration as the anode current and have a
magnitude in the order of 1.5 times IGT.
Data Sheet. Types R1275NC14x to R1275NC21x Issue 3
Page 3 of 12
August 2012
Distributed Gate Thyristor Types R1275NC14x to R1275NC21x
9.0 Frequency Ratings
The curves illustrated in figures 10 to 18 are for guidance only and are superseded by the maximum
ratings shown on page 1.
10.0 Square wave ratings
These ratings are given for load component rate of rise of forward current of 100 and 500 A/µs.
11.0 Duty cycle lines
The 100% duty cycle is represented on all the ratings by a straight line. Other duties can be included as
parallel to the first.
12.0 Maximum Operating Frequency
The maximum operating frequency is set by the on-state duty, the time required for the thyristor to turn off
(tq) and for the off-state voltage to reach full value (tv), i.e.
f
max
=
1
tpulse + tq + tv
13.0 On-State Energy per Pulse Characteristics
These curves enable rapid estimation of device dissipation to be obtained for conditions not covered by
the frequency ratings.
Let Ep be the Energy per pulse for a given current and pulse width, in joules
Let Rth(J-Hs) be the steady-state d.c. thermal resistance (junction to sink)
and TSINK be the heat sink temperature.
Then the average dissipation will be:
W AV = E P ⋅ f and TSINK (max .) = 125 − (W AV ⋅ Rth ( J − Hs ) )
14.0 Reverse recovery ratings
(i) Qra is based on 50% Irm chord as shown in Fig. 1
Fig. 1
150 µs
(ii) Qrr is based on a 150µs integration time i.e.
Qrr =
∫i
rr
.dt
0
(iii)
Data Sheet. Types R1275NC14x to R1275NC21x Issue 3
K Factor =
Page 4 of 12
t1
t2
August 2012
Distributed Gate Thyristor Types R1275NC14x to R1275NC21x
15.0 Reverse Recovery Loss
15.1 Determination by Measurement
From waveforms of recovery current obtained from a high frequency shunt (see Note 1, Page 5) and
reverse voltage present during recovery, an instantaneous reverse recovery loss waveform must be
constructed. Let the area under this waveform be E joules per pulse. A new heat sink temperature can
then be evaluated from the following:
TSINK ( new ) = TSINK ( original ) − E ⋅ (k + f ⋅ Rth ( J − Hs ) )
Where k=0.227 (°C/W)/s
E = Area under reverse loss waveform per pulse in joules (W.s.)
f = rated frequency Hz at the original heat sink temperature.
Rth(J-Hs) = d.c. thermal resistance (°C/W).
The total dissipation is now given by:
W (TOT) = W (original) + E ⋅ f
15.2 Determination without Measurement
In circumstances where it is not possible to measure voltage and current conditions, or for design
purposes, the additional losses E in joules may be estimated as follows.
Let E be the value of energy per reverse cycle in joules (curves in Figure 9).
Let f be the operating frequency in Hz
TSINK (new ) = TSINK (original ) − (E ⋅ Rth ⋅ f )
Where TSINK (new) is the required maximum heat sink temperature and
TSINK (original) is the heat sink temperature given with the frequency ratings.
A suitable R-C snubber network is connected across the thyristor to restrict the transient reverse voltage
to a peak value (Vrm) of 67% of the maximum grade. If a different grade is being used or Vrm is other than
67% of Grade, the reverse loss may be approximated by a pro rata adjustment of the maximum value
obtained from the curves.
NOTE 1- Reverse Recovery Loss by Measurement
This thyristor has a low reverse recovered charge and peak reverse recovery current. When measuring
the charge, care must be taken to ensure that:
(a) a.c. coupled devices such as current transformers are not affected by prior passage of high
amplitude forward current.
(b) A suitable, polarised, clipping circuit must be connected to the input of the measuring oscilloscope
to avoid overloading the internal amplifiers by the relatively high amplitude forward current signal
(c) Measurement of reverse recovery waveform should be carried out with an appropriate critically
damped snubber, connected across diode anode to cathode. The formula used for the calculation
of this snubber is shown below:
R2 = 4 ⋅
Vr
CS ⋅ di dt
Where:
Data Sheet. Types R1275NC14x to R1275NC21x Issue 3
Vr
CS
R
= Commutating source voltage
= Snubber capacitance
= Snubber resistance
Page 5 of 12
August 2012
Distributed Gate Thyristor Types R1275NC14x to R1275NC21x
16.0 Computer Modelling Parameters
16.1 Calculating VT using ABCD Coefficients
The on-state characteristic IT vs VT, on page 7 is represented in two ways;
(i)
the well established VT0 and rT tangent used for rating purposes and
(ii)
a set of constants A, B, C, D, forming the coefficients of the representative equation for VT in
terms of IT given below:
VT = A + B ⋅ ln (I T ) + C ⋅ I T + D ⋅ I T
The constants, derived by curve fitting software, are given in this report for hot characteristics where
possible. The resulting values for VT agree with the true device characteristic over a current range, which
is limited to that plotted.
125°C Coefficients
A
1.23001347
B
-0.0588432
C
1.2853×10-4
D
0.01923445
16.2 D.C. Thermal Impedance Calculation
−t
⎛
τ
rt = ∑ rp ⋅ ⎜1 − e p
⎜
p =1
⎝
⎞
⎟
⎟
⎠
p=n
Where p = 1 to n, n is the number of terms in the series.
t
rt
rp
τp
=
=
=
=
Duration of heating pulse in seconds.
Thermal resistance at time t.
Amplitude of pth term.
Time Constant of rth term.
D.C. Double Side Cooled
Term
1
2
3
rp
0.01249139
6.316833×10
τp
0.8840810
0.1215195
-3
4
1.850855×10
-3
5
-3
6.135330×10-4
6.742908×10-3
1.326292×10-3
1.922045×10
0.03400152
D.C. Single Side Cooled
Term
1
rp
0.02919832
τp
6.298105
2
4.863568×10-
3
3
3.744798×10-3
3.286174
0.5359179
Data Sheet. Types R1275NC14x to R1275NC21x Issue 3
Page 6 of 12
4
6.818034×10-
5
2.183558×10-
6
3
3
1.848294×10-3
0.1186897
0.02404574
3.379476×10-3
August 2012
Distributed Gate Thyristor Types R1275NC14x to R1275NC21x
Curves
Figure 1 - On-state characteristics of Limit device
10000
Figure 2 - Transient thermal impedance
0.1
R1275NC14x-21x
Issue 3
R1275NC14x-21x
Issue 3
SSC 0.048K/W
DSC 0.024K/W
Tj = 125°C
Transient Thermal Impedance - Z (th)t (K/W)
Instantaneous on-state current - I T (A)
0.01
1000
0.001
0.0001
100
0
0.5
1
1.5
2
2.5
0.00001
0.0001
3
0.001
0.01
0.1
Instantaneous on-state voltage - VT (V)
1
10
100
Time (s)
Figure 3 - Gate characteristics - Trigger limits
`
Figure 4 - Gate characteristics - Power curves
20
6
R1275NC14x-21x
Issue 3
Tj=25°C
R1275NC14x-21x
Issue 3
Tj=25°C
18
5
14
Max VG dc
4
Gate Trigger Voltage - V GT (V)
Gate Trigger Voltage - V GT (V)
16
IGT, VGT
3
2
Max VG dc
12
10
8
PG Max 30W dc
-40°C
-10°C
25°C
125°C
6
4
1
PG 2W dc
2
IGD, VGD
Min VG dc
Min VG dc
0
0
0
0.2
0.4
0.6
0.8
0
1
Data Sheet. Types R1275NC14x to R1275NC21x Issue 3
2
4
6
8
10
Gate Trigger Current - IGT (A)
Gate Trigger Current - IGT (A)
Page 7 of 12
August 2012
Distributed Gate Thyristor Types R1275NC14x to R1275NC21x
Figure 5 - Total recovered charge, Qrr
Figure 6 - Recovered charge, Qra (50% chord)
10000
10000
R1275NC14x-21x
Issue 3
Tj = 125°C
R1275NC14x-21x
Issue 3
Tj = 125°C
1500A
Recovered charge - Q ra (µC)
Total recovered charge - Q rr (µC)
2000A
1000A
500A
1000
2000A
1500A
1000A
1000
500A
100
100
10
100
10
1000
100
Figure 7 - Peak reverse recovery current, Irm
Figure 8 - Maximum recovery time, trr (50% chord)
10
1000
R1275NC14x-21x
Issue 3
2000A
1500A
1000A
500A
Tj = 125°C
Reverse recovery time - trr (µs)
Reverse recovery current - IRM (A)
1000
Commutation rate - di/dt (A/µs)
Commutation rate - di/dt (A/µs)
100
2000A
1500A
1000A
500A
Tj = 125°C
R1275NC14x-21x
Issue 3
1
10
10
100
10
1000
Commutation rate - di/dt (A/µs)
Data Sheet. Types R1275NC14x to R1275NC21x Issue 3
100
1000
Commutation rate - di/dt (A/µs)
Page 8 of 12
August 2012
Distributed Gate Thyristor Types R1275NC14x to R1275NC21x
Figure 9 – Reverse recovery energy per pulse
Figure 10 - Sine wave energy per pulse
1000
1.00E+02
R1275NC14x-21x
Issue 3
Tj=125°C
1.00E+01
Energy per pulse (J)
Energy per pulse - Er (mJ)
5kA
2000A
1500A
1000A
500A
3kA
1.00E+00
2kA
1.5kA
1kA
1.00E-01
Snubber Value
0.25µF, 5Ω
Vrm = 67%VRRM
500A
Tj = 125°C
R1275NC14x-21x
Issue 3
1.00E-02
1.00E-05
100
10
100
1000
1.00E-04
1.00E-03
Figure 11 - Sine wave frequency ratings
Figure 12 - Sine wave frequency ratings
1.00E+05
1.00E+05
R1275NC14x-21x
Issue 3
R1275NC14x-21x
Issue 3
THs=85°C
THs=55°C
1kA
1.00E-02
Pulse width (s)
Commutation rate - di/dt (A/µs)
500A
100% Duty Cycle
100% Duty Cycle
1.5kA
1.00E+04
1.00E+04
1kA
2kA
1.5kA
3kA
1.00E+03
Frequency (Hz)
Frequency (Hz)
2kA
5kA
1.00E+03
3kA
5kA
1.00E+02
1.00E+01
1.00E-05
1.00E+02
1.00E-04
1.00E-03
1.00E+01
1.00E-05
1.00E-02
Pulse Width (s)
Data Sheet. Types R1275NC14x to R1275NC21x Issue 3
1.00E-04
1.00E-03
1.00E-02
Pulse width (s)
Page 9 of 12
August 2012
Distributed Gate Thyristor Types R1275NC14x to R1275NC21x
Figure 13 - Square wave frequency ratings
Figure 14 - Square wave frequency ratings
1.00E+05
1.00E+05
di/dt=100A/µs
R1275NC14x-21x
Issue 3
di/dt=500A/µs
THs=55°C
THs=55°C
R1275NC14x-21x
Issue 3
1kA
500A
100% Duty Cycle
1kA
1.00E+04
1.00E+04
1.5kA
1.5kA
2kA
100% Duty Cycle
2kA
1.00E+03
Frequency (Hz)
Frequency (Hz)
3kA
5kA
1.00E+02
3kA
1.00E+03
5kA
1.00E+02
1.00E+01
1.00E-05
1.00E-04
1.00E-03
1.00E+01
1.00E-05
1.00E-02
1.00E-04
Pulse width (s)
Figure 15 - Square wave frequency ratings
1.00E+05
R1275NC14x-21x
Issue 3
di/dt=100A/µs
R1275NC14x-21x
Issue 3
THs=85°C
THs=85°C
di/dt=500A/µs
500A
1.00E+04
1kA
500A
100% Duty Cycle
1kA
100% Duty Cycle
1.5kA
1.5kA
2kA
2kA
1.00E+03
Frequency (Hz)
Frequency (Hz)
1.00E-02
Figure 16 - Square wave frequency ratings
1.00E+05
1.00E+04
1.00E-03
Pulse width (s)
3kA
1.00E+03
5kA
3kA
5kA
1.00E+02
1.00E+02
1.00E+01
1.00E+01
1.00E-05
1.00E-04
1.00E-03
1.00E-02
Pulse width (s)
Data Sheet. Types R1275NC14x to R1275NC21x Issue 3
1.00E+00
1.00E-05
1.00E-04
1.00E-03
1.00E-02
Pulse width (s)
Page 10 of 12
August 2012
Distributed Gate Thyristor Types R1275NC14x to R1275NC21x
Figure 17 - Square wave energy per pulse
1.00E+03
Figure 18 - Square wave energy per pulse
1.00E+03
R1275NC14x-21x
Issue 3
R1275NC14x-21x
Issue 3
di/dt=100A/µs
di/dt=500A/µs
Tj=125°C
Tj=125°C
1.00E+02
1.00E+02
Energy per pulse (J)
Energy per pulse (J)
5kA
3kA
2kA
1.00E+01
5kA
3kA
1.00E+00
1.00E+01
1.00E+00
2kA
1.5kA
1kA
500A
1.5kA
1.00E-01
1kA
1.00E-01
500A
1.00E-02
1.00E-05
1.00E-04
1.00E-03
1.00E-02
1.00E-05
1.00E-02
1.00E-04
Pulse width (s)
1.00E-03
1.00E-02
Pulse width (s)
Figure 19 - Maximum surge and I2t Ratings
Gate may temporarily lose control of conduction angle
100000
1.00E+07
I2t: 60% VRRM
10000
1.00E+06
ITSM: VRRM≤10V
Maximum I2t (A2s)
Total peak half sine surge current - ITSM (A)
I2t: VRRM≤10V
ITSM: 60% VRRM
Tj (initial) = 125°C
R1275NC14x-21x
Issue 3
1000
1.00E+05
1
3
5
10
Duration of surge (ms)
Data Sheet. Types R1275NC14x to R1275NC21x Issue 3
1
5
10
50
100
Duration of surge (cycles @ 50Hz)
Page 11 of 12
August 2012
Distributed Gate Thyristor Types R1275NC14x to R1275NC21x
Outline Drawing & Ordering Information
101A223
ORDERING INFORMATION
(Please quote 10 digit code as below)
R1275
NC
♦♦
x
Fixed
Type Code
Fixed
Outline Code
Fixed Voltage Code
VDRM/100
14-21
tq Code
L=65µs, M=70µs
Typical order code: R1275NC21L – 2100V VDRM, 1800V VRRM, 65µs tq, 27.7mm clamp height capsule.
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In the interest of product improvement, IXYS UK Westcode Ltd reserves the right to change specifications at any time
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Devices with a suffix code (2-letter or letter/digit/letter combination) added to their generic code are not necessarily subject
to the conditions and limits contained in this report.
Data Sheet. Types R1275NC14x to R1275NC21x Issue 3
Page 12 of 12
August 2012