Date:- 5th March 2013 Data Sheet Issue:- A1 Anode Shorted Gate Turn-Off Thyristor Types G3000TF250 Absolute Maximum Ratings MAXIMUM LIMITS VOLTAGE RATINGS UNITS VDRM Repetitive peak off-state voltage, (note 1) 2500 V VRSM Non-repetitive peak off-state voltage, (note 1) 2500 V VDC-link Maximum continuos DC-link voltage 1250 V VRRM Repetitive peak reverse voltage 18 V VRSM Non-repetitive peak reverse voltage 18 V MAXIMUM LIMITS UNITS RATINGS ITGQ Peak turn-off current, (note 2) 3000 A Ls Snubber loop inductance, ITM=ITGQ, (note 2) 200 nH IT(AV)M Mean on-state current, Tsink=55°C (note 3) 1690 A IT(RMS) Nominal RMS on-state current, Tsink=25°C (note 3) 3460 A ITSM Peak non-repetitive surge current tp=10ms, (Note 4) 30 kA ITSM2 Peak non-repetitive surge current tp=2ms, (Note 4) I2 t I2t capacity for fusing tp=10ms di/dtcr 40 kA 4.5×106 A2s Critical rate of rise of on-state current, (note 5) 500 A/µs PFGM Peak forward gate power 200 W PRGM Peak reverse gate power 21 kW IFGM Peak forward gate current 100 A VRGM Peak reverse gate voltage (note 6). 18 V Tj op Operating temperature range -40 to +125 °C Tstg Storage temperature range -40 to +125 °C Notes:1) VGK=-2Volts. 2) Tj=125°C, VD=1250V, VDM ≤2500V diGQ/dt=40A/µs, ITGQ=3000A and CS=5µF. 3) Double-side cooled, single phase; 50Hz, 180° half-sinewave. 4) Tj(initial)=125°C, single phase, 180° sinewave, re-applied voltage VD=VR≤10V. 5) IT=3000A repetitive, IGM=30A, diGM/dt=40A/µs. For di/dt>500A/µs please consult the factory. 6) May exceed this value during turn-off avalanche period. Data Sheet. Type G3000TF250 Issue A1 Page 1 of 11 March 2013 Anode Shorted Gate Turn-Off Thyristor type G3000TF250 Characteristics Parameter MIN TYP VTM Maximum peak on-state voltage - IL Latching current - 40 IH Holding current. - dv/dtcr Critical rate of rise of off-state voltage IDRM MAX TEST CONDITIONS IG=5A, IT=3000A V - Tj=25°C A 40 - Tj=25°C A 1000 - - VD=3000V, VGR=-2V V/µs Peak off state current - - 60 Rated VDRM, VGR=-2V mA IRRM Peak reverse current - - 20 VRR=18V mA IGKM Peak negative gate leakage current - - 20 VGR=-18V mA - 1.0 - Tj=-40°C V - 0.7 1 Tj=25°C - 0.5 - Tj=125°C V - 7.40 9.0 Tj=-40°C A - 2.75 4.0 Tj=25°C 0.60 1.0 Tj=125°C 1.0 2.0 VGT IGT td Gate trigger voltage Gate trigger current Delay time - 2.5 UNITS V VD=25V, RL=25mΩ A VD=25V, RL=25mΩ A µs VD=1250V, ITGQ=3000A, diT/dt=300A/µs, IGM=40A, diG/dt=30A/µs, CS=5µF, Rs=5Ω tgt Turn-on time - 3.5 5.0 µs Eon Turn-on energy - 0.4 - J tf Fall time - 1.5 - µs ts Storage time - 20 25 µs tgq Turn-off time - 26 30 µs VDM =2000V, ITGQ=3000A, diGQ/dt=40A/µs, VGR=-16V, CS=5µF IGQM Peak turn-off gate current - 800 - QGQ Turn-off gate charge - 12 - mC ttail Tail time - 12 - µs Eoff Turn-off energy - 3.5 - J - 12 - Double side cooled K/kW - 26 - Cathode side cooled K/kW - 22 - Anode side cooled K/kW 30 - 44 - 1.5 - RthJK Thermal resistance junction to sink F Mounting force Wt Weight A (see note 2) kN kg Notes:o 1) Unless otherwise indicated Tj=125 C. 2) For other clamping forces, consult factory. Data Sheet. Type G3000TF250 Issue A1 Page 2 of 11 March 2013 Anode Shorted Gate Turn-Off Thyristor type G3000TF250 Notes on ratings and characteristics. 1. Maximum Ratings. 1.1 Off-state voltage ratings. Unless otherwise indicated, all off-state voltage ratings are given for gate conditions as diagram 1. It should be noted that VDRM is the repeatable peak voltage, which may be applied to the device and does not relate to a DC operating condition. Diagram 1. 1.2 Peak turn-off current. The figure given in maximum ratings is the highest value for normal operation of the device under conditions given in note 2 of ratings. A snubber circuit equivalent to that given in diagram 2 is assumed. If a more complex snubber, such as an Underland circuit, is employed then the equivalent CS should be used and Ls<0.2µH must be ensured. Ls R Ds Cs Diagram 2. 1.3 R.M.S and average current. Measured as for standard thyristor conditions, double side cooled, single phase, 50Hz, 180° half-sinewave. These are included as a guide to compare the alternative types of GTO thyristors available; values cannot be applied to practical applications, as they do not include switching losses. 2 1.4 Surge rating and I t. Ratings are for half-sinewave, peak value against duration is given in the curve of figure 2. 1.5 Snubber loop inductance. Use of GTO thyristors with snubber loop inductance, Ls<0.2µH implies no dangerous Vs voltages (see diagrams 2 & 3) can be applied, provided the other conditions given in note 1.2 are enforced. Alternatively Vs should be limited to 800 Volts to avoid possible device failure. 1.6 Gate ratings The absolute conditions above which the gate may be damaged. It is permitted to allow VGK(AV) during turn-off to exceed VRGM which is the implied DC condition. Data Sheet. Type G3000TF250 Issue A1 Page 3 of 11 March 2013 Anode Shorted Gate Turn-Off Thyristor type G3000TF250 2 Characteristics 2.1 Instantaneous on-state voltage Measured using a 500µs square pulse, see also the curves of figure 1 for other values of ITM. 2.2 Latching and holding current These are considered to be approximately equal and only the latching current is measured, type test only as outlined below. The test circuit and wave diagrams are given in diagram 4. The anode current is monitored on an oscilloscope while VD is increased, until the current is seen to flow during the un-gated period between the end of IG and the application of reverse gate voltage. Test frequency is 100Hz with IGM & IG as for td of characteristic data. IGM IG 100µs Gate current 16V 100µs Unlatched R1 Anode current unlatched condition CT C1 Anode current Latched condition Vs DUT Latched Gate-drive Diagram 4, Latching test circuit and waveforms. 2.3 Critical dv/dt The gate conditions are the same as for 1.1, this characteristic is for off-state only and does not relate to dv/dt at turn-off. The measurement, type test only, is conducted using the exponential ramp method as shown in diagram 5. It should be noted that GTO thyristors have a poor static dv/dt capability if the gate is open circuit or RGK is high impedance. Typical values: - dv/dt<100V/µs for RGK>10Ω. Diagram 5, Definition of dV/dt. 2.4 Off-state leakage. For IDRM see notes 1.1. For gate leakage IGK, the off-state gate circuit is required to sink this leakage and still maintain minimum of – 2 Volts. See diagram 6. Diagram 6. 2.5 Gate trigger characteristics. These are measured by slowly ramping up the gate current and monitoring the transition of anode current and voltage (see diagram 7). Maximum and typical data of gate trigger current, for the full junction temperature range, is given in the curves of figure 4. Only typical figures are given for gate trigger voltage for the full allowable junction temperature range. Figures 4 should be used in when considering forward gate drive circuit requirement. The gate drive requirements should always be calculated for lowest junction temperature start-up condition. Data Sheet. Type G3000TF250 Issue A1 Page 4 of 11 March 2013 Anode Shorted Gate Turn-Off Thyristor type G3000TF250 Feedback Anode current 0.9VAK R1 Not to scale Currentsence CT Gate current C1 Vs IGT 0.1IA DUT Anode-Cathode Voltage Gate-drive Diagram 7, Gate trigger circuit and waveforms. 2.6 Turn-on characteristics The definitions of turn-on parameters used in the characteristic data are given in diagram 8. diG/dt IG IGM td tr di/dt ITM VD VD=VDM tgt Eon integral period Diagram 8, Turn-on wave-diagrams. 2.7 Turn-off characteristics The definitions of turn-off parameters used in the characteristic data are given in diagram 9. tgq tf VDM 0.9 ITGQ VD 0.1 VGR 0.1 QGQ IGQ VG(AV) VGQ tgw Diagram 9, Turn-off parameter definitions. Data Sheet. Type G3000TF250 Issue A1 Page 5 of 11 March 2013 Anode Shorted Gate Turn-Off Thyristor type G3000TF250 Curves Figure 1 - On-state characteristics of Limit device 10000 G3000TF250 Issue A1 Instantaneous on-state current, IT (A) Tj=25°C Tj=125°C 1000 100 10 0 0.5 1 1.5 2 2.5 3 3.5 Instantaneous on-state voltage, VT (V) Figure 2 - Maximum surge and I2t Ratings 1.00E+08 100000 2 2 Maximum I t (A s) Total peak half sine surge current (A) 2 I t: VRRM ≤10V 1.00E+07 10000 ITSM: VRRM ≤10V G3000TF250 Issue A1 Tj (initial) = 125°C 1000 1 3 5 10 Duration of surge (ms) Data Sheet. Type G3000TF250 Issue A1 1 5 10 50 100 1.00E+06 Duration of surge (cycles @ 50Hz) Page 6 of 11 March 2013 Anode Shorted Gate Turn-Off Thyristor type G3000TF250 Figure 3 – Instantaneous forward gate characteristics 1000 G3000TF250 Issue A1 Instantaneous forward gate current, I FG (A) For Tj=-40°C to +125°C 100 Minimum Maximum 10 1 0 0.5 1 1.5 2 Instantaneous forward gate voltage, VFG (V) Figure 4 – Transient thermal impedance 0.1 Transient thermal impedance junction to sink RthJK, (K/W) G3000TF250 Issue A1 Cathode Anode Double-side 0.01 0.001 0.0001 0.001 0.01 0.1 1 10 100 Time, (s) Data Sheet. Type G3000TF250 Issue A1 Page 7 of 11 March 2013 Anode Shorted Gate Turn-Off Thyristor type G3000TF250 Figure 5 – Typical forward blocking voltage vs. external gate-cathode resistance Figure 6 – D.C. gate trigger current vs. junction temperature 1.2 10 G3000TF250 Issue A1 G3000TF250 Issue A1 Tj=50°C 1 Tj=80°C D.C. gate trigger current, IGT (A) Forward blocking as a ratio of VD/VRM 0.8 Tj=105°C 0.6 Tj=125°C Maximum 1 Typical 0.4 0.2 0.1 0 1 10 100 -50 1000 -25 0 25 50 75 100 125 150 Junction temperature, Tj(°C) External gate-cathode resistance RGK (W) Figure 7 – Typical turn-on energy per pulse vs. turn-on current Figure 8 – Maximum turn-on time vs. rate of rise of on-state current 0.6 8 G3000TF250 Issue A1 G3000TF250 Issue A1 VD=0.5VDRM, ITGQ=3000A VD=0.5VDRM diG/dt=30A/µs IGM=40A, diG/dt=30A/ µs Cs=5µF, Rs=5Ω 0.5 Tj=25°C di/dt=400A/µs Tj=25°C IGM=40A 6 di/dt=300A/µs IGM=50A 0.3 di/dt=200A/µs 0.2 di/dt=100A/µs Turn-on time, tgt (µs) Turn-on energy per pulse, EON (J) 0.4 IGM=60A 4 2 0.1 0 0 0 500 1000 1500 2000 2500 3000 3500 4000 10 Turn-on current, ITM (A) Data Sheet. Type G3000TF250 Issue A1 100 1000 Rate of rise of on-state current, di/dt (A/ µs) Page 8 of 11 March 2013 Anode Shorted Gate Turn-Off Thyristor type G3000TF250 Figure 9 – Typical peak turn-off gate current vs. turn-off current Figure 10 – Typical gate turn-off charge vs. turn-off current 1000 15 G3000TF250 Issue A1 VDM=0.8VDRM G3000TF250 Issue A1 VDM=0.8VDRM diGQ/dt=60A/µs Tj=125°C Tj=125°C diGQ/dt=40A/µs diGQ/dt=40A/µs 800 diGQ/dt=60A/µs Gate turn-off charge, QGQ (mC). Peak turn-off gate current, IGQ (A) 10 600 5 400 200 0 0 1000 2000 3000 4000 0 1000 Turn-off current, ITGQ (A) 2000 3000 4000 Turn-off current, ITGQ (A) Figure 11 – Maximum turn-off time vs. turn-off current Figure 12 – Typical turn-off energy per pulse vs. turn-off current 40 4 G3000TF250 Issue A1 G3000TF250 Issue A1 VDM=0.8VDRM VDM=2000V, VD=0.5VDRM Tj=125°C 35 Cs=5µF diGQ/dt=40A/µs Ls≤0.2µH Cs=4µF Tj=125°C diGQ/dt=40A/µs 30 3 Cs=3µF diGQ/dt=60A/µs Turn-off energy per pulse, Eoff (J) Turn-off time, tgq (µs) 25 20 15 10 2 1 5 0 0 0 1000 2000 3000 0 4000 Data Sheet. Type G3000TF250 Issue A1 1000 2000 3000 4000 Turn-off current, ITGQ (A) Turn-off current, ITGQ (A) Page 9 of 11 March 2013 Anode Shorted Gate Turn-Off Thyristor type G3000TF250 Figure 13 – Maximum permissible turn-off current vs. snubber capacitance Figure 14 – Maximum turn-off current vs. turn-off voltage 5 3500 G3000TF250 Issue A1 G3000TF250 Issue A1 VDM=2000V, VD=0.5VDRM VDM=2000V, VD=0.5VDRM diGQ/dt=40A/µs 4.5 diGQ/dt=40A/µs Ls≤0.2µH Tj=125°C Ls<0.2µH 3000 Cs=5µF Tj=125°C 4 2500 Cs=4µF Turn-off current, ITGQ (A) Snubber capacitance, Cs (µF) 3.5 3 2000 Cs=3µF 1500 Cs=2µF 2.5 1000 Cs=1µF 2 500 1.5 1 1000 0 1500 2000 2500 3000 0 0.2 Turn-off current, ITGQ (A) 0.4 0.6 0.8 1 Turn-off volatge as the ratio VD/VDRM Figure 15 – typical tail time (ITGQ<2A) vs. turn-off current Figure 16 – Minimum off-time to re-fire device vs. turn-off current 120 14 12 G3000TF250 Issue A1 G3000TF250 Issue A1 VDM=2000V, VD=0.5VDRM VD=0.8VDRM diGQ/dt=40A/µs Tj=125°C Ls<0.2µH Tj=125°C diGQ/dt=40A/µs 100 diGQ/dt=60A/µs Minimum off-time to re-fire device, toff (µs) Tail time (ITGQ<2A), ttail (µs) 10 8 6 80 4 60 2 0 40 0 1000 2000 3000 4000 0 Turn-off current, ITGQ (A) Data Sheet. Type G3000TF250 Issue A1 1000 2000 3000 4000 Turn-off current, ITGQ (A) Page 10 of 11 March 2013 Anode Shorted Gate Turn-Off Thyristor type G3000TF250 Outline Drawing & Ordering Information 101A316 (Please quote 10 digit code as below) ORDERING INFORMATION G3000 TF 25 0 Fixed Type Code Fixed Outline Code Fixed Voltage Code VDRM/100 25 Fixed Code Order code: G3000TF250 IXYS Semiconductor GmbH Edisonstraße 15 D-68623 Lampertheim Tel: +49 6206 503-0 Fax: +49 6206 503-627 E-mail: [email protected] IXYS Corporation 1590 Buckeye Drive Milpitas CA 95035-7418 Tel: +1 (408) 457 9000 Fax: +1 (408) 496 0670 E-mail: [email protected] IXYS UK Westcode Ltd Langley Park Way, Langley Park, Chippenham, Wiltshire, SN15 1GE. Tel: +44 (0)1249 444524 Fax: +44 (0)1249 659448 E-mail: [email protected] www.ixysuk.com www.ixys.com IXYS Long Beach IXYS Long Beach, Inc 2500 Mira Mar Ave, Long Beach CA 90815 Tel: +1 (562) 296 6584 Fax: +1 (562) 296 6585 E-mail: [email protected] The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed except with the written permission of and in the manner permitted by the proprietors IXYS UK Westcode Ltd. © IXYS UK Westcode Ltd. In the interest of product improvement, IXYS UK Westcode Ltd reserves the right to change specifications at any time without prior notice. Devices with a suffix code (2-letter, 3-letter or letter/digit/letter combination) added to their generic code are not necessarily subject to the conditions and limits contained in this report. Data Sheet. Type G3000TF250 Issue A1 Page 11 of 11 March 2013