Date:- 28th April 2013 Data Sheet Issue:- 2 Anode Shorted Gate Turn-Off Thyristor Types G3000TF450 Absolute Maximum Ratings MAXIMUM LIMITS VOLTAGE RATINGS UNITS VDRM Repetitive peak off-state voltage, (note 1) 4500 V VRSM Non-repetitive peak off-state voltage, (note 1) 4500 V VDC-link Maximum continuos DC-link voltage 2800 V VRRM Repetitive peak reverse voltage 18 V VRSM Non-repetitive peak reverse voltage 18 V MAXIMUM LIMITS UNITS RATINGS ITGQ Peak turn-off current, (note 2) 3000 A Ls Snubber loop inductance, ITM=ITGQ, (note 2) 200 nH IT(AV)M Mean on-state current, Tsink=55°C (note 3) 1381 A IT(RMS) Nominal RMS on-state current, 25°C (note 3) 2770 A ITSM Peak non-repetitive surge current tp=10ms, (Note 4) 24 kA ITSM2 Peak non-repetitive surge current tp=2ms, (Note 4) I2 t I2t capacity for fusing tp=10ms di/dtcr 32 kA 2.88×106 A2s Critical rate of rise of on-state current, (note 5) 500 A/µs PFGM Peak forward gate power 200 W PRGM Peak reverse gate power 21 kW IFGM Peak forward gate current 100 A VRGM Peak reverse gate voltage (note 6). 18 V Tj op Operating temperature range -40 to +125 °C Tstg Storage temperature range -40 to +125 °C Notes:1) VGK=-2Volts. 2) Tj=125°C, VD=2800V, VDM ≤4500V diGQ/dt=40A/µs, ITGQ=3000A and CS=6µF. 3) Double-side cooled, single phase; 50Hz, 180° half-sinewave. 4) Tj(initial)=125°C, single phase, 180° sinewave, re-applied voltage VD=VR≤10V. 5) IT=3000A repetitive, IGM=30A, diGM/dt=20A/µs. For di/dt>500A/µs please consult the factory. 6) May exceed this value during turn-off avalanche period. Data Sheet. Type G3000TF450 Issue 2 Page 1 of 11 April 2013 Anode Shorted Gate Turn-Off Thyristor type G3000TF450 Characteristics Parameter MIN TYP MAX TEST CONDITIONS VTM Maximum peak on-state voltage - 3.75 4.0 IL Latching current - 40 IH Holding current. - dv/dtcr Critical rate of rise of off-state voltage IDRM UNITS IG=8A, IT=3000A V - Tj=25°C A 40 - Tj=25°C A 1000 - - VD=3000V, VGR=-2V V/µs Peak off state current - - 60 Rated VDRM, VGR=-2V mA IRRM Peak reverse current - - 20 VRR=18V mA IGKM Peak negative gate leakage current - - 20 VGR=-18V mA - 1.0 - Tj=-40°C V - 0.8 1.0 Tj=25°C - 0.6 - Tj=125°C V - 3 8 Tj=-40°C A - 1.5 3 Tj=25°C 50 500 - 1.5 VGT IGT td Gate trigger voltage Gate trigger current Delay time V VD=25V, RL=25mΩ A VD=25V, RL=25mΩ 1000 Tj=125°C mA 3 µs VD=2250V, ITGQ=3000A, diT/dt=300A/µs, IGM=30A, diG/dt=20A/µs, CS=6µF, Rs=5Ω tgt Turn-on time - 4 10 µs Eon Turn-on energy - 0.7 1.5 J tf Fall time - 2 - µs ts Storage time - 20 25 µs tgq Turn-off time - 22 30 µs VDM =3600V, ITGQ=3000A, diGQ/dt=40A/µs, VGR=-16V, CS=6µF IGQM Peak turn-off gate current - 850 - QGQ Turn-off gate charge - 10 - mC ttail Tail time - 20 - µs Eoff Turn-off energy - 7 10 J - 12 - Double side cooled K/kW - 26 - Cathode side cooled K/kW - 22 - Anode side cooled K/kW 30 - 44 - 1.5 - RthJK Thermal resistance junction to sink F Mounting force Wt Weight A (see note 2) kN kg Notes:o 1) Unless otherwise indicated Tj=125 C. 2) For other clamping forces, consult factory. Data Sheet. Type G3000TF450 Issue 2 Page 2 of 11 April 2013 Anode Shorted Gate Turn-Off Thyristor type G3000TF450 Notes on ratings and characteristics. 1. Maximum Ratings. 1.1 Off-state voltage ratings. Unless otherwise indicated, all off-state voltage ratings are given for gate conditions as diagram 1. It should be noted that VDRM is the repeatable peak voltage, which may be applied to the device and does not relate to a DC operating condition. Diagram 1. 1.2 Peak turn-off current. The figure given in maximum ratings is the highest value for normal operation of the device under conditions given in note 2 of ratings. A snubber circuit equivalent to that given in diagram 2 is assumed. If a more complex snubber, such as an Underland circuit, is employed then the equivalent CS should be used and Ls<0.2µH must be ensured. Ls R Ds Cs Diagram 2. 1.3 R.M.S and average current. Measured as for standard thyristor conditions, double side cooled, single phase, 50Hz, 180° half-sinewave. These are included as a guide to compare the alternative types of GTO thyristors available; values cannot be applied to practical applications, as they do not include switching losses. 2 1.4 Surge rating and I t. Ratings are for half-sinewave, peak value against duration is given in the curve of figure 2. 1.5 Snubber loop inductance. Use of GTO thyristors with snubber loop inductance, Ls<0.2µH implies no dangerous Vs voltages (see diagrams 2 & 3) can be applied, provided the other conditions given in note 1.2 are enforced. Alternatively Vs should be limited to 800 Volts to avoid possible device failure. 1.6 Gate ratings The absolute conditions above which the gate may be damaged. It is permitted to allow VGK(AV) during turn-off to exceed VRGM which is the implied DC condition. Data Sheet. Type G3000TF450 Issue 2 Page 3 of 11 April 2013 Anode Shorted Gate Turn-Off Thyristor type G3000TF450 2 Characteristics 2.1 Instantaneous on-state voltage Measured using a 500µs square pulse, see also the curves of figure 1 for other values of ITM. 2.2 Latching and holding current These are considered to be approximately equal and only the latching current is measured, type test only as outlined below. The test circuit and wave diagrams are given in diagram 4. The anode current is monitored on an oscilloscope while VD is increased, until the current is seen to flow during the un-gated period between the end of IG and the application of reverse gate voltage. Test frequency is 100Hz with IGM & IG as for td of characteristic data. IGM IG 100µs Gate current 16V 100µs Unlatched R1 Anode current unlatched condition CT C1 Anode current Latched condition Vs DUT Latched Gate-drive Diagram 4, Latching test circuit and waveforms. 2.3 Critical dv/dt The gate conditions are the same as for 1.1, this characteristic is for off-state only and does not relate to dv/dt at turn-off. The measurement, type test only, is conducted using the exponential ramp method as shown in diagram 5. It should be noted that GTO thyristors have a poor static dv/dt capability if the gate is open circuit or RGK is high impedance. Typical values: - dv/dt<100V/µs for RGK>10Ω. Diagram 5, Definition of dV/dt. 2.4 Off-state leakage. For IDRM see notes 1.1. For gate leakage IGK, the off-state gate circuit is required to sink this leakage and still maintain minimum of – 2 Volts. See diagram 6. Diagram 6. 2.5 Gate trigger characteristics. These are measured by slowly ramping up the gate current and monitoring the transition of anode current and voltage (see diagram 7). Maximum and typical data of gate trigger current, for the full junction temperature range, is given in the curves of figure 4. Only typical figures are given for gate trigger voltage for the full allowable junction temperature range. Figures 4 should be used in when considering forward gate drive circuit requirement. The gate drive requirements should always be calculated for lowest junction temperature start-up condition. Data Sheet. Type G3000TF450 Issue 2 Page 4 of 11 April 2013 Anode Shorted Gate Turn-Off Thyristor type G3000TF450 Feedback Anode current 0.9VAK R1 Not to scale Currentsence CT Gate current C1 Vs IGT 0.1IA DUT Anode-Cathode Voltage Gate-drive Diagram 7, Gate trigger circuit and waveforms. 2.6 Turn-on characteristics The definitions of turn-on parameters used in the characteristic data are given in diagram 8. diG/dt IG IGM td tr di/dt ITM VD VD=VDM tgt Eon integral period Diagram 8, Turn-on wave-diagrams. 2.7 Turn-off characteristics The definitions of turn-off parameters used in the characteristic data are given in diagram 9. tgq tf VDM 0.9 ITGQ VD 0.1 VGR 0.1 QGQ IGQ VG(AV) VGQ tgw Diagram 9, Turn-off parameter definitions. Data Sheet. Type G3000TF450 Issue 2 Page 5 of 11 April 2013 Anode Shorted Gate Turn-Off Thyristor type G3000TF450 Curves Figure 1 - On-state characteristics of Limit device 10000 G3000TF450 Issue 2 Instantaneous on-state current, IT (A) Tj=25°C Tj=125°C 1000 100 0 1 2 3 4 5 6 7 Instantaneous on-state voltage, VT (V) Figure 2 - Maximum surge and I2t Ratings 1.00E+08 I2t: VRRM ≤10V 1.00E+07 10000 ITSM: VRRM ≤10V 1.00E+06 1000 Maximum I2t (A2s) Total peak half sine surge current (A) 100000 G3000TF450 Issue 2 Tj (initial) = 125°C 100 1 3 5 10 Duration of surge (ms) Data Sheet. Type G3000TF450 Issue 2 1 5 10 50 100 1.00E+05 Duration of surge (cycles @ 50Hz) Page 6 of 11 April 2013 Anode Shorted Gate Turn-Off Thyristor type G3000TF450 Figure 3 – Instantaneous forward gate characteristics 1000 G3000TF450 Issue 2 Instantaneous forward gate current, IFG (A) For Tj=-40°C to +125°C 100 Minimum Maximum 10 1 0 0.5 1 1.5 2 Instantaneous forward gate voltage, VFG (V) Figure 4 – Transient thermal impedance 0.1 Transient thermal impedance junction to sink RthJK, (K/W) G3000TF450 Issue A2 Cathode Anode Double-side 0.01 0.001 0.0001 0.001 0.01 0.1 1 10 100 Time, (s) Data Sheet. Type G3000TF450 Issue 2 Page 7 of 11 April 2013 Anode Shorted Gate Turn-Off Thyristor type G3000TF450 Figure 5 – Typical forward blocking voltage vs. external gate-cathode resistance Figure 6 – D.C. gate trigger current vs. junction temperature 1.2 10 G3000TF450 Issue 2 G3000TF450 Issue 2 Tj=50°C 1 Tj=80°C D.C. gate trigger current, IGT (A) Forward blocking as a ratio of VD/VRM 0.8 Tj=105°C 0.6 Tj=125°C Maximum 1 Typical 0.4 0.2 0.1 0 1 10 100 -50 1000 -25 0 25 50 75 100 Figure 7 – Typical turn-on energy per pulse vs. turn-on current 150 Figure 8 – Maximum turn-on time vs. rate of rise of on-state current 1 15 G3000TF450 Issue 2 G3000TF450 Issue 2 VD=0.5VDRM 0.9 VD=0.5VDRM, ITGQ=3000A IGM=30A, diG/dt=20A/ µs diG/dt=20A/µs di/dt=400A/µs Cs=6µF, Rs=5Ω 0.8 Tj=25°C IGM=30A Tj=25°C di/dt=300A/µs 0.7 IGM==40A 10 0.6 Turn-on time, tgt (µs) Turn-on energy per pulse, EON (J) 125 Junction temperature, Tj(°C) External gate-cathode resistance RGK (W) di/dt=200A/µs 0.5 IGM=50A 0.4 di/dt=100A/µs 5 0.3 0.2 0.1 0 0 0 500 1000 1500 2000 2500 3000 3500 4000 10 Turn-on current, ITM (A) Data Sheet. Type G3000TF450 Issue 2 100 1000 Rate of rise of on-state current, di/dt (A/ µs) Page 8 of 11 April 2013 Anode Shorted Gate Turn-Off Thyristor type G3000TF450 Figure 9 – Typical peak turn-off gate current vs. turn-off current Figure 10 – Typical gate turn-off charge vs. turn-off current 1000 12 diGQ/dt=60A/µs G3000TF450 Issue 2 VDM=0.8VDRM G3000TF450 Issue 2 VDM=0.8VDRM Tj=125°C Tj=125°C diGQ/dt=40A/µs 10 diGQ/dt=40A/µs 800 diGQ/dt=60A/µs Gate turn-off charge, QGQ (mC). Peak turn-off gate current, IGQ (A) 8 600 6 4 400 2 200 0 0 1000 2000 3000 4000 0 1000 Turn-off current, ITGQ (A) 2000 3000 4000 Turn-off current, ITGQ (A) Figure 11 – Maximum turn-off time vs. turn-off current Figure 12 – Typical turn-off energy per pulse vs. turn-off current 25 8 G3000TF450 Issue 2 G3000TF450 Issue 2 VDM=0.8VDRM VDM=3600V, VD=0.5VDRM diGQ/dt=40A/µs Tj=125°C 7 Cs=6µF diGQ/dt=40A/µs Ls≤0.2µH Cs=4µF Tj=125°C diGQ/dt=60A/µs 20 6 Turn-off energy per pulse, Eoff (J) Cs=3µF Turn-off time, tgq (µs) 15 10 5 4 3 2 5 1 0 0 0 0 1000 2000 3000 1000 2000 3000 4000 Turn-off current, ITGQ (A) 4000 Turn-off current, ITGQ (A) Data Sheet. Type G3000TF450 Issue 2 Page 9 of 11 April 2013 Anode Shorted Gate Turn-Off Thyristor type G3000TF450 Figure 13 – Maximum permissible turn-off current vs. snubber capacitance Figure 14 – Maximum turn-off current vs. turn-off voltage 7 3500 G3000TF450 Issue 2 G3000TF450 Issue 2 VDM=3600V, VD=0.5VDRM VDM=3600V, VD=0.5VDRM diGQ/dt=40A/µs diGQ/dt=40A/µs 6 Ls<0.2µH 3000 Ls≤0.2µH Tj=125°C Cs=6µF 2500 Tj=125°C Cs=4µF Turn-off current, ITGQ (A) Snubber capacitance, Cs (µF) 5 4 2000 Cs=3µF 1500 Cs=2µF 3 1000 Cs=1µF 500 2 0 0 1 1000 1500 2000 2500 0.2 0.4 0.6 0.8 1 Turn-off voltage as the ratio VD/VDRM 3000 Turn-off current, ITGQ (A) Figure 15 – typical tail time (ITGQ<2A) vs. turn-off current Figure 16 – Minimum off-time to re-fire device vs. turn-off current 120 25 J G3000TF450 Issue 2 G3000TF450 Issue 2 VDM=3600V, VD=0.5VDRM VD=0.8VDRM 110 Tj=125°C diGQ/dt=40A/µs Ls<0.2µH Tj=125°C 20 diGQ/dt=40A/µs 100 Minimum off-time to re-fire device, toff (µs) Tail time (ITGQ<2A), ttail (µs) diGQ/dt=60A/µs 15 10 90 80 70 60 50 5 40 30 0 0 1000 2000 3000 0 4000 Data Sheet. Type G3000TF450 Issue 2 1000 2000 3000 4000 Turn-off current, ITGQ (A) Turn-off current, ITGQ (A) Page 10 of 11 April 2013 Anode Shorted Gate Turn-Off Thyristor type G3000TF450 Outline Drawing & Ordering Information 101A316 (Please quote 10 digit code as below) ORDERING INFORMATION G3000 TF 45 0 Fixed Type Code Fixed Outline Code Fixed Voltage Code VDRM/100 45 Fixed Code Order code: G3000TF450 IXYS Semiconductor GmbH Edisonstraße 15 D-68623 Lampertheim Tel: +49 6206 503-0 Fax: +49 6206 503-627 E-mail: [email protected] IXYS Corporation 1590 Buckeye Drive Milpitas CA 95035-7418 Tel: +1 (408) 457 9000 Fax: +1 (408) 496 0670 E-mail: [email protected] IXYS UK Westcode Ltd Langley Park Way, Langley Park, Chippenham, Wiltshire, SN15 1GE. Tel: +44 (0)1249 444524 Fax: +44 (0)1249 659448 E-mail: [email protected] www.ixysuk.com www.ixys.com IXYS Long Beach IXYS Long Beach, Inc 2500 Mira Mar Ave, Long Beach CA 90815 Tel: +1 (562) 296 6584 Fax: +1 (562) 296 6585 E-mail: [email protected] The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed except with the written permission of and in the manner permitted by the proprietors IXYS UK Westcode Ltd. © IXYS UK Westcode Ltd. In the interest of product improvement, IXYS UK Westcode Ltd reserves the right to change specifications at any time without prior notice. Devices with a suffix code (2-letter, 3-letter or letter/digit/letter combination) added to their generic code are not necessarily subject to the conditions and limits contained in this report. Data Sheet. Type G3000TF450 Issue 2 Page 11 of 11 April 2013