1000V to 1200V Polar standard and HiPerFet™ Power

IXYS
POWER
Efficiency through Technology
NE W
P R O D UCT
B R I E F
1000V to 1200V Polar Standard and HiPerFET™ Power MOSFETs
NEXT GENERATION N-CHANNEL POWER MOSFETS
OCTOBER 2007
OVERVIEW
These new 1000-1200V Standard and HiPerFETTM additions to the IXYS PolarTM Power MOSFET
family are designed to improve the performance of high voltage power conversion systems.
IXYS recognizes that both voltage rating and RDS(on) are critical for reliable and efficient power
conversion. Polar Power MOSFETs improve efficiency by significantly reducing typical onresistance RDS(on) by 20% through the utlization of IXYS proprietary technology. Their ruggedness
and higher voltage ratings will improve reliability as they all feature a fast intrinsic body diode
with low reverse recovery charge.
IXYS now offers parts rated at 1000V, 1100V and 1200V to facilitate optimum part selection. All
of these Polar Power MOSFETs are offered in standard packages and a variety of IXYS ISOPLUS
packages with integral backside case isolation. The IXTA06N120P (1200V, 0.6A, RDS(on) = 32
Ω) and IXFB44N100P (1000V, 44A, RDS(on) = 0.220 Ω) illustrate the range in power handling
capabilities of this new product offering.
IXYS’ HiPerFETs are targeted at hard switching inverter and power supply applications. They
are used in demanding and high reliability IT and telecom infrastructure applications that
require efficient switching and energy conversion in tight enclosures. In addition, these Polar
Power MOSFETs are used in products where reduced size and weight are important features.
Other common, very high voltage applications include power supplies, inverters, high-voltage
lighting, industrial machinery and medical equipment. These rugged Polar Power MOSFETs
are suitable for high frequency switching under challenging operating conditions. IXYS will
continue to grow the high voltage product line with an ongoing plan to increase the value
offered in the Polar Power MOSFET family.
IXYS offers a full range of standard packages, including the D3-pak, and a full range of surface
mount and discrete packages... TO-220, TO-252, TO-247, TO-268, SOT-227B, etc. In addition,
versions are offered in IXYS proprietary ISOPLUS™ packages, providing UL recognized 2500V
electrical isolation junction-to-case with superior thermal performance.
Features
•
•
•
•
•
•
Up to 20% Lower RDS(on)
Lower thermal impedance and
increased power handling
Excellent ruggedness and dV/dt
capability
Incorporates fast intrinsic body
diodes with very low Qrr and Trr
Cost-effective
ISOPLUSTM high perfomrance
package options
Benefits
•
•
•
•
•
Increased current handling
capability
Maximized package efficiency
Reduced component count
Reduced circuit complexity
Greater reliability
www.ixys.com
Applications
•
•
•
•
•
Hard switching inverters
Power supplies
High voltage lighting
Industrial machinery
Medical equipment
PolarTM (1000-1200V) Standard and HiPerFET Power MOSFETs
ID (cont)
TC=25°C
(A)
RDS(on) max
Tj=25°C
(Ω)
Ciss
typ
(pF)
Qg
typ
(nC)
trr
IXT=Typ
IXF=Max
(ns)
R(th)JC
max
(°C/W)
Pd
(W)
Package Style
Part Number
Technology
VDSS
max
(V)
IXT(1)08N100P
Polar MOSFETTM
1000
0.8
20.0000
300
11.3
750
3.000
42
A, P, Y
IXT(1)1N100P
Polar MOSFETTM
1000
1.0
15.0000
400
15.5
750
2.500
50
A, P, Y
Polar MOSFET
TM
1000
1.4
11.0000
500
17.8
750
2.000
63
A, P, Y
IXT(1)2N100P
Polar MOSFETTM
1000
2.0
7.5000
630
24.3
800
1.450
86
A, P, Y
IXT(1)3N100P
Polar MOSFETTM
1000
3.0
4.8000
1220
39.0
820
1.000
125
A, H, P
IXF(1)15N100P(2)
Polar HiPerFETTM
1000
15.0
0.7600
6200
97.0
300
0.230
543
H, V, V ... S
IXF(1)20N100P
Polar HiPerFET
TM
1000
20.0
0.5700
8500
126.0
300
0.190
660
H, T
IXFR20N100P
Polar HiPerFETTM
1000
11.0
0.6400
8500
126.0
300
0.540
230
R
IXF(1)26N100P
Polar HiPerFETTM
1000
26.0
0.3900
14000
197.0
300
0.160
780
K, X
IXFN26N100P
Polar HiPerFETTM
1000
23.0
0.3900
14000
197.0
300
0.210
595
N
IXFR126N100P
Polar HiPerFETTM
1000
15.0
0.4300
14000
197.0
300
0.430
290
R
IXF(1)32N100P
Polar HiPerFETTM
1000
32.0
0.3200
17000
225.0
300
0.130
960
K, X
IXFN32N100P
Polar HiPerFETTM
1000
27.0
0.3200
17000
225.0
300
0.180
690
N
IXFR32N100P
Polar HiPerFETTM
1000
18.0
0.3400
17000
225.0
300
0.390
320
R
IXFN38N100P
Polar HiPerFETTM
1000
38.0
0.2100
26000
350.0
300
0.125
1000
N
IXFL38N100P
Polar HiPerFETTM
1000
29.0
0.2300
26000
350.0
300
0.240
520
L
IXFB44N100P
Polar HiPerFET
TM
1000
44.0
0.2200
22000
305.0
300
0.100
1250
B
IXFL44N100P
Polar HiPerFETTM
1000
37.0
0.2400
22000
305.0
300
0.350
357
L
IXFN44N100P
Polar HiPerFET
1000
37.0
0.2200
22000
305.0
300
0.140
890
N
1000 Volt
IXT(1)1R4N100P
TM
1100 Volt
IXF(1)30N110P
Polar HiPerFETTM
1100
30.0
0.3600
16000
235.0
300
0.130
960
K, X
IXFN30N110P
Polar HiPerFET
TM
1100
25.0
0.3600
16000
235.0
300
0.180
695
N
IXFR30N110P
Polar HiPerFETTM
1100
16.0
0.4000
16000
235.0
300
0.390
320
R
IXFN36N110P
Polar HiPerFET
TM
1100
36.0
0.2400
27000
350.0
300
0.125
1000
N
IXFL36N110P
Polar HiPerFETTM
1100
26.0
0.2600
27000
350.0
300
0.240
520
L
IXFB40N110P
Polar HiPerFETTM
1100
40.0
0.2600
22000
310.0
300
0.100
1250
B
IXFL40N110P
Polar HiPerFETTM
1100
21.0
0.2800
22000
310.0
300
0.350
357
L
IXFN40N110P
Polar HiPerFETTM
1100
34.0
0.2600
22000
310.0
300
0.140
890
N
IXT(1)06N120P
Polar MOSFETTM
1200
0.6
32.0000
270
13.3
900
3.000
42
A, P
IXT(1)08N120P
Polar MOSFETTM
1200
0.8
25.0000
370
14.0
900
2.500
50
A, P
IXT(1)1N120P
Polar MOSFET
TM
1200
1.0
20.0000
550
17.6
900
2.000
63
A, P
IXT(1)1R4N120P
Polar MOSFETTM
1200
1.4
13.0000
725
24.8
900
1.450
86
A, P
IXT(1)2R4N120P
Polar MOSFETTM
1200
2.4
7.5000
1207
37.0
920
1.000
125
A, H, P
IXF(1)12N120P(2)
Polar HiPerFETTM
1200
12.0
1.3500
6500
103.0
300
0.230
543
H, V, V ... S
IXF(1)16N120P
Polar HiPerFETTM
1200
16.0
0.9500
8000
120.0
300
0.190
660
H, T
IXFR16N120P
Polar HiPerFET
TM
1200
9.0
1.0400
8000
120.0
300
0.540
230
R
IXF(1)20N120P
Polar HiPerFET
TM
1200
20.0
0.5700
12900
193.0
300
0.160
780
K, X
IXFN20N120P
Polar HiPerFETTM
1200
20.0
0.5700
12900
193.0
300
0.210
595
N
IXFR20N120P
Polar HiPerFET
TM
1200
13.0
0.6300
12900
193.0
300
0.430
290
R
IXF(1)26N120P
Polar HiPerFETTM
1200
26.0
0.4600
16000
225.0
300
0.130
960
K, X
IXFN26N120P
Polar HiPerFETTM
1200
23.0
0.4600
16000
225.0
300
0.180
695
N
IXFR26N120P
Polar HiPerFET
TM
1200
15.0
0.5000
16000
225.0
300
0.390
320
R
IXFB30N120P
Polar HiPerFETTM
1200
30.0
0.3500
22500
310.0
300
0.100
1250
B
IXFL30N120P
Polar HiPerFETTM
1200
18.0
0.3800
22500
310.0
300
0.350
357
L
IXFN30N120P
Polar HiPerFETTM
1200
30.0
0.3500
22500
310.0
300
0.140
890
N
IXFL32N120P
Polar HiPerFETTM
1200
24.0
0.3400
27000
360.0
300
0.240
520
L
IXFN32N120P
Polar HiPerFETTM
1200
32.0
0.3100
27000
360.0
300
0.125
1000
N
1200 Volt
(1) Place holder is part number for package designator;
(2) Add suffix letter ‘S’ to part number for Surface Mountable PluS220 package, e.g. IXFV110N10PS