IXYS POWER Efficiency through Technology NE W P R O D UCT B R I E F 1000V to 1200V Polar Standard and HiPerFET™ Power MOSFETs NEXT GENERATION N-CHANNEL POWER MOSFETS OCTOBER 2007 OVERVIEW These new 1000-1200V Standard and HiPerFETTM additions to the IXYS PolarTM Power MOSFET family are designed to improve the performance of high voltage power conversion systems. IXYS recognizes that both voltage rating and RDS(on) are critical for reliable and efficient power conversion. Polar Power MOSFETs improve efficiency by significantly reducing typical onresistance RDS(on) by 20% through the utlization of IXYS proprietary technology. Their ruggedness and higher voltage ratings will improve reliability as they all feature a fast intrinsic body diode with low reverse recovery charge. IXYS now offers parts rated at 1000V, 1100V and 1200V to facilitate optimum part selection. All of these Polar Power MOSFETs are offered in standard packages and a variety of IXYS ISOPLUS packages with integral backside case isolation. The IXTA06N120P (1200V, 0.6A, RDS(on) = 32 Ω) and IXFB44N100P (1000V, 44A, RDS(on) = 0.220 Ω) illustrate the range in power handling capabilities of this new product offering. IXYS’ HiPerFETs are targeted at hard switching inverter and power supply applications. They are used in demanding and high reliability IT and telecom infrastructure applications that require efficient switching and energy conversion in tight enclosures. In addition, these Polar Power MOSFETs are used in products where reduced size and weight are important features. Other common, very high voltage applications include power supplies, inverters, high-voltage lighting, industrial machinery and medical equipment. These rugged Polar Power MOSFETs are suitable for high frequency switching under challenging operating conditions. IXYS will continue to grow the high voltage product line with an ongoing plan to increase the value offered in the Polar Power MOSFET family. IXYS offers a full range of standard packages, including the D3-pak, and a full range of surface mount and discrete packages... TO-220, TO-252, TO-247, TO-268, SOT-227B, etc. In addition, versions are offered in IXYS proprietary ISOPLUS™ packages, providing UL recognized 2500V electrical isolation junction-to-case with superior thermal performance. Features • • • • • • Up to 20% Lower RDS(on) Lower thermal impedance and increased power handling Excellent ruggedness and dV/dt capability Incorporates fast intrinsic body diodes with very low Qrr and Trr Cost-effective ISOPLUSTM high perfomrance package options Benefits • • • • • Increased current handling capability Maximized package efficiency Reduced component count Reduced circuit complexity Greater reliability www.ixys.com Applications • • • • • Hard switching inverters Power supplies High voltage lighting Industrial machinery Medical equipment PolarTM (1000-1200V) Standard and HiPerFET Power MOSFETs ID (cont) TC=25°C (A) RDS(on) max Tj=25°C (Ω) Ciss typ (pF) Qg typ (nC) trr IXT=Typ IXF=Max (ns) R(th)JC max (°C/W) Pd (W) Package Style Part Number Technology VDSS max (V) IXT(1)08N100P Polar MOSFETTM 1000 0.8 20.0000 300 11.3 750 3.000 42 A, P, Y IXT(1)1N100P Polar MOSFETTM 1000 1.0 15.0000 400 15.5 750 2.500 50 A, P, Y Polar MOSFET TM 1000 1.4 11.0000 500 17.8 750 2.000 63 A, P, Y IXT(1)2N100P Polar MOSFETTM 1000 2.0 7.5000 630 24.3 800 1.450 86 A, P, Y IXT(1)3N100P Polar MOSFETTM 1000 3.0 4.8000 1220 39.0 820 1.000 125 A, H, P IXF(1)15N100P(2) Polar HiPerFETTM 1000 15.0 0.7600 6200 97.0 300 0.230 543 H, V, V ... S IXF(1)20N100P Polar HiPerFET TM 1000 20.0 0.5700 8500 126.0 300 0.190 660 H, T IXFR20N100P Polar HiPerFETTM 1000 11.0 0.6400 8500 126.0 300 0.540 230 R IXF(1)26N100P Polar HiPerFETTM 1000 26.0 0.3900 14000 197.0 300 0.160 780 K, X IXFN26N100P Polar HiPerFETTM 1000 23.0 0.3900 14000 197.0 300 0.210 595 N IXFR126N100P Polar HiPerFETTM 1000 15.0 0.4300 14000 197.0 300 0.430 290 R IXF(1)32N100P Polar HiPerFETTM 1000 32.0 0.3200 17000 225.0 300 0.130 960 K, X IXFN32N100P Polar HiPerFETTM 1000 27.0 0.3200 17000 225.0 300 0.180 690 N IXFR32N100P Polar HiPerFETTM 1000 18.0 0.3400 17000 225.0 300 0.390 320 R IXFN38N100P Polar HiPerFETTM 1000 38.0 0.2100 26000 350.0 300 0.125 1000 N IXFL38N100P Polar HiPerFETTM 1000 29.0 0.2300 26000 350.0 300 0.240 520 L IXFB44N100P Polar HiPerFET TM 1000 44.0 0.2200 22000 305.0 300 0.100 1250 B IXFL44N100P Polar HiPerFETTM 1000 37.0 0.2400 22000 305.0 300 0.350 357 L IXFN44N100P Polar HiPerFET 1000 37.0 0.2200 22000 305.0 300 0.140 890 N 1000 Volt IXT(1)1R4N100P TM 1100 Volt IXF(1)30N110P Polar HiPerFETTM 1100 30.0 0.3600 16000 235.0 300 0.130 960 K, X IXFN30N110P Polar HiPerFET TM 1100 25.0 0.3600 16000 235.0 300 0.180 695 N IXFR30N110P Polar HiPerFETTM 1100 16.0 0.4000 16000 235.0 300 0.390 320 R IXFN36N110P Polar HiPerFET TM 1100 36.0 0.2400 27000 350.0 300 0.125 1000 N IXFL36N110P Polar HiPerFETTM 1100 26.0 0.2600 27000 350.0 300 0.240 520 L IXFB40N110P Polar HiPerFETTM 1100 40.0 0.2600 22000 310.0 300 0.100 1250 B IXFL40N110P Polar HiPerFETTM 1100 21.0 0.2800 22000 310.0 300 0.350 357 L IXFN40N110P Polar HiPerFETTM 1100 34.0 0.2600 22000 310.0 300 0.140 890 N IXT(1)06N120P Polar MOSFETTM 1200 0.6 32.0000 270 13.3 900 3.000 42 A, P IXT(1)08N120P Polar MOSFETTM 1200 0.8 25.0000 370 14.0 900 2.500 50 A, P IXT(1)1N120P Polar MOSFET TM 1200 1.0 20.0000 550 17.6 900 2.000 63 A, P IXT(1)1R4N120P Polar MOSFETTM 1200 1.4 13.0000 725 24.8 900 1.450 86 A, P IXT(1)2R4N120P Polar MOSFETTM 1200 2.4 7.5000 1207 37.0 920 1.000 125 A, H, P IXF(1)12N120P(2) Polar HiPerFETTM 1200 12.0 1.3500 6500 103.0 300 0.230 543 H, V, V ... S IXF(1)16N120P Polar HiPerFETTM 1200 16.0 0.9500 8000 120.0 300 0.190 660 H, T IXFR16N120P Polar HiPerFET TM 1200 9.0 1.0400 8000 120.0 300 0.540 230 R IXF(1)20N120P Polar HiPerFET TM 1200 20.0 0.5700 12900 193.0 300 0.160 780 K, X IXFN20N120P Polar HiPerFETTM 1200 20.0 0.5700 12900 193.0 300 0.210 595 N IXFR20N120P Polar HiPerFET TM 1200 13.0 0.6300 12900 193.0 300 0.430 290 R IXF(1)26N120P Polar HiPerFETTM 1200 26.0 0.4600 16000 225.0 300 0.130 960 K, X IXFN26N120P Polar HiPerFETTM 1200 23.0 0.4600 16000 225.0 300 0.180 695 N IXFR26N120P Polar HiPerFET TM 1200 15.0 0.5000 16000 225.0 300 0.390 320 R IXFB30N120P Polar HiPerFETTM 1200 30.0 0.3500 22500 310.0 300 0.100 1250 B IXFL30N120P Polar HiPerFETTM 1200 18.0 0.3800 22500 310.0 300 0.350 357 L IXFN30N120P Polar HiPerFETTM 1200 30.0 0.3500 22500 310.0 300 0.140 890 N IXFL32N120P Polar HiPerFETTM 1200 24.0 0.3400 27000 360.0 300 0.240 520 L IXFN32N120P Polar HiPerFETTM 1200 32.0 0.3100 27000 360.0 300 0.125 1000 N 1200 Volt (1) Place holder is part number for package designator; (2) Add suffix letter ‘S’ to part number for Surface Mountable PluS220 package, e.g. IXFV110N10PS