PolarTM Power MOSFET HiPerFETTM IXFL44N100P VDSS ID25 RDS(on) trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1000V 22A Ω 240mΩ 300ns ISOPLUS i5-PakTM (HV) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000 V VGSS Continuous ± 30 V VGSM Transient ± 40 V ID25 TC = 25°C IDM TC = 25°C, pulse width limited by TJM IAR 22 A 110 A TC = 25°C 22 A EAS TC = 25°C 2 J dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 15 V/ns PD TC = 25°C 357 W -55 ... +150 °C Features TJM 150 °C • Silicon chip on Direct-Copper-Bond Tstg -55 ... +150 °C TJ G S D G = Gate S = Source TL Maximum lead temperature for soldering 300 °C TSOLD Plastic body for 10s 260 °C VISOL 50/60 Hz, RMS, 1 minute 2500 V~ • • • IISOL ≤ 1mA 3000 V~ • 40..120/4.5..27 N/lb. 8 g FC t = 1s Mounting force Weight Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 1000 VGS(th) VDS = VGS, ID = 1mA 3.5 IGSS VGS = ± 30V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) VGS = 10V, ID = 22A, Note 1 TJ = 125°C © 2008 IXYS CORPORATION, All rights reserved V 6.5 V ± 200 nA 50 μA 3 mA substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low drain to tab capacitance(<30pF) Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Fast intrinsic Rectifier Applications • Symbol Test Conditions (TJ = 25°C, unless otherwise specified) D = Drain • • • • Switched-mode and resonant-mode power supplies DC-DC converters Laser Drivers AC and DC motor controls Robotics and servo controls Advantages • • • Easy assembly Space savings High power density 240 mΩ DS99893A(4/08) IXFL44N100P Symbol Test Conditions (TJ = 25°C unless otherwise specified) gfs Characteristic Values Min. Typ. Max. VDS = 20V, ID = 22A, Note 1 20 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss ISOPLUS i5-PakTM HV (IXFL) Outline 35 S 19 nF 1060 pF 41 pF 1.70 Ω 60 ns RGi Gate input resistance td(on) Resistive Switching Times tr VGS = 10V, VDS = 0.5 • VDSS, ID = 22A 68 ns td(off) RG = 1Ω (External) 90 ns 54 ns 305 nC 104 nC 125 nC tf Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 22A Qgd 0.35 °C/W RthJC RthCS 0.15 Source-Drain Diode TJ = 25°C unless otherwise specified) IS VGS = 0V ISM VSD trr QRM IRM Note: Bottom heatsink meets 2500 Vrms isolation to the other pins. °C/W Characteristic Values Min. Typ. Max. 44 A Repetitive, pulse width limited by TJM 176 A IF = IS, VGS = 0V, Note 1 1.5 V 300 ns IF = 22A, -di/dt = 100A/μs VR = 100V, VGS = 0V 2.5 μC 17 A Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFL44N100P Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 45 90 VGS = 10V 9V 40 35 70 30 60 8V ID - Amperes ID - Amperes VGS = 10V 9V 80 25 20 15 10 50 40 8V 30 20 7V 5 10 0 7V 0 0 1 2 3 4 5 6 7 8 9 10 11 0 5 10 20 25 30 Fig. 4. RDS(on) Normalized to ID = 22A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 125ºC 45 3.0 VGS = 10V 8V 40 2.8 VGS = 10V 2.6 35 2.4 RDS(on) - Normalized ID - Amperes 15 VDS - Volts VDS - Volts 30 25 20 7V 15 2.2 2.0 I D = 44A 1.8 1.6 I D = 22A 1.4 1.2 1.0 10 0.8 5 6V 0.6 0 0.4 0 2 4 6 8 10 12 14 16 18 20 22 24 -50 -25 0 VDS - Volts Fig. 5. RDS(on) Normalized to ID = 22A Value vs. Drain Current VGS = 10V 75 100 125 150 24 TJ = 125ºC 22 20 2.2 18 2.0 ID - Amperes RDS(on) - Normalized 50 Fig. 6. Maximum Drain Current vs. Case Temperature 2.6 2.4 25 TJ - Degrees Centigrade 1.8 1.6 TJ = 25ºC 1.4 16 14 12 10 8 6 1.2 4 1.0 2 0.8 0 0 10 20 30 40 50 ID - Amperes © 2008 IXYS CORPORATION, All rights reserved 60 70 80 90 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXFL44N100P Fig. 7. Input Admittance Fig. 8. Transconductance 50 60 45 55 TJ = - 40ºC 50 40 45 TJ = 125ºC 25ºC - 40ºC 30 g f s - Siemens ID - Amperes 35 25 20 25ºC 40 125ºC 35 30 25 20 15 15 10 10 5 5 0 0 5 5.5 6 6.5 7 7.5 8 8.5 0 9 5 10 15 VGS - Volts 20 25 30 35 40 45 50 ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 16 130 120 VDS = 500V 14 110 I D = 22A 100 I G = 10mA 12 80 VGS - Volts IS - Amperes 90 70 60 50 TJ = 125ºC 10 8 6 40 30 4 TJ = 25ºC 20 2 10 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 0 50 100 VSD - Volts 200 250 300 350 400 450 Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 100,000 1.000 f = 1 MHz 10,000 Ciss 0.100 Z(th)JC - ºC / W Capacitance - PicoFarads 150 QG - NanoCoulombs 1,000 Coss 0.010 100 Crss 10 0 5 10 15 20 25 30 35 40 VDS - Volts 0.001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: F_44N100P(97)4-01-08-D