IXYS IXFL36N110P

Advance Technical Information
PolarTM Power MOSFET
HiPerFETTM
IXFL36N110P
VDSS
ID25
RDS(on)
trr
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
=
=
≤
≤
1100V
26A
Ω
260mΩ
300ns
ISOPLUS i5-PakTM (HV)
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25°C to 150°C
1100
V
VDGR
TJ = 25°C to 150°C, RGS = 1MΩ
1100
V
VGSS
Continuous
± 30
V
VGSM
Transient
± 40
V
ID25
TC = 25°C
26
A
IDM
TC = 25°C, pulse width limited by TJM
110
A
IAR
TC = 25°C
18
A
EAS
TC = 25°C
2
J
dV/dt
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
20
V/ns
PD
TC = 25°C
520
W
-55 ... +150
°C
TJM
150
°C
z
Tstg
-55 ... +150
°C
z
TJ
TL
Maximum lead temperature for soldering
300
°C
TSOLD
Plastic body for 10s
260
°C
VISOL
50/60 Hz, RMS, 1 minute
2500
V~
IISOL ≤ 1mA
3000
V~
40..120/4.5..27
N/lb.
8
g
FC
t = 1s
Mounting force
Weight
G
S
D
G = Gate
S = Source
D = Drain
Features
z
z
z
UL recognized package
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic diode
Advantages
z
z
z
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
Characteristic Values
Min.
Typ. Max.
BVDSS
VGS = 0V, ID = 3mA
1100
VGS(th)
VDS = VGS, ID = 1mA
3.5
IGSS
VGS = ± 30V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
RDS(on)
Easy to mount
Space savings
High power density
Applications:
V
z
TJ = 125°C
VGS = 10V, ID = 18A, Note 1
© 2008 IXYS CORPORATION, All rights reserved
6.5
V
± 300
nA
50
μA
4 mA
260 mΩ
z
z
z
z
High Voltage Switched-mode and
resonant-mode power supplies
High Voltage Pulse Power Applications
High Voltage Discharge circuits in
Lasers Pulsers, Spark Igniters, RF
Generators
High Voltage DC-DC converters
High Voltage DC-AC inverters
DS99907A (04/08)
IXFL36N110P
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
gfs
Characteristic Values
Min.
Typ.
Max.
VDS = 20V, ID = 18A, Note 1
20
Ciss
Coss
VGS = 0V, VDS = 25V, f = 1MHz
Crss
RGi
Gate input resistance
td(on)
Resistive Switching Times
tr
td(off)
tf
VGS = 10V, VDS = 0.5 • VDSS, ID = 18A
RG = 1Ω (External)
Qg(on)
Qgs
VGS = 10V, VDS = 0.5 • VDSS, ID = 18A
Qgd
32
S
23
nF
1240
pF
110
pF
0.85
Ω
60
ns
54
ns
94
ns
45
ns
350
nC
117
nC
157
nC
RthCS
0.15
Source-Drain Diode
TJ = 25°C unless otherwise specified)
IS
VGS = 0V
ISM
VSD
QRM
IRM
Tab
Note: Bottom Tab meets 2500 Vrms
isolation to the other pins.
0.24 °C/W
RthJC
trr
ISOPLUS i5-PakTM HV (IXFL) Outline
°C/W
Characteristic Values
Min.
Typ.
Max.
36
A
Repetitive, pulse width limited by TJM
144
A
IF = IS, VGS = 0V, Note 1
1.5
V
300 ns
IF = 20A, -di/dt = 100A/μs
VR = 100V, VGS = 0V
2.3
μC
16
A
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or moreof the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2