IXYS IXFR20N120P

PolarTM Power MOSFET
HiPerFETTM
IXFR20N120P
VDSS
ID25
RDS(on)
trr
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Test Conditions
Maximum Ratings
VDSS
TJ = 25°C to 150°C
1200
V
VDGR
TJ = 25°C to 150°C, RGS = 1MΩ
1200
V
VGSS
Continuous
± 30
V
VGSM
Transient
± 40
V
ID25
TC = 25°C
13
A
IDM
TC = 25°C, pulse width limited by TJM
50
A
IA
TC = 25°C
10
A
EAS
TC = 25°C
1
J
dV/dt
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
15
V/ns
PD
TC = 25°C
290
W
-55 ... +150
°C
TJM
150
°C
Tstg
-55 ... +150
°C
TL
Maximum lead temperature for soldering
300
°C
TSOLD
Plastic body for 10s
260
°C
VISOL
50/60 Hz, RMS, 1 minute
2500
V~
FC
Mounting force
20..120/4.5..27
N/lb.
5
g
Weight
Isolated Tab
G = Gate
S = Source
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
Characteristic Values
Min.
Typ. Max.
BVDSS
VGS = 0V, ID = 1mA
1200
VGS(th)
VDS = VGS, ID = 1mA
3.5
IGSS
VGS = ± 30V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
RDS(on)
VGS = 10V, ID = 10A, Note 1
© 2008 IXYS CORPORATION, All rights reserved
V
6.5
V
± 200
nA
25 μA
5 mA
D
= Drain
Features
• Silicon chip on Direct-Copper-Bond
•
•
•
•
•
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Low drain to tab capacitance(<30pF)
Low RDS (on) HDMOSTM process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Fast intrinsic Rectifier
Advantages
•
•
•
TJ = 125°C
1200V
13A
Ω
630mΩ
300ns
ISOPLUS247 (IXFR)
E153432
Symbol
TJ
=
=
≤
≤
Easy assembly
Space savings
High power density
Applications:
z
z
z
z
z
High Voltage Switched-mode and
resonant-mode power supplies
High Voltage Pulse Power Applications
High Voltage Discharge circuits in
Lasers Pulsers, Spark Igniters, RF
Generators
High Voltage DC-DC converters
High Voltage DC-AC inverters
630 mΩ
DS99888A (04/08)
IXFR20N120P
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
gfs
Characteristic Values
Min.
Typ.
Max.
VDS = 20V, ID = 10A, Note 1
10
Ciss
Coss
VGS = 0V, VDS = 25V, f = 1MHz
Crss
ISOPLUS247 (IXFR) Outline
16
S
11.1
nF
600
pF
60
pF
1.60
Ω
49
ns
RGi
Gate input resistance
td(on)
Resistive Switching Times
tr
VGS = 10V, VDS = 0.5 • VDSS, ID = 10A
45
ns
td(off)
RG = 1Ω (External)
72
ns
70
ns
193
nC
74
nC
85
nC
tf
Qg(on)
Qgs
VGS = 10V, VDS = 0.5 • VDSS, ID = 10A
Qgd
0.43 °C/W
RthJC
RthCS
0.15
Source-Drain Diode
TJ = 25°C unless otherwise specified)
°C/W
Characteristic Values
Min.
Typ.
Max.
IS
VGS = 0V
20
A
ISM
Repetitive, pulse width limited by TJM
80
A
VSD
IF = IS, VGS = 0V, Note 1
1.5
V
trr
QRM
IRM
300 ns
IF = 10A, -di/dt = 100A/μs
VR = 100V, VGS = 0V
0.84
μC
9
A
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or moreof the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXFR20N120P
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
40
20
VGS = 10V
9V
18
VGS = 10V
9V
35
16
30
8V
12
ID - Amperes
ID - Amperes
14
10
8
25
20
8V
15
6
10
4
7V
2
7V
5
0
0
0
2
4
6
8
10
0
12
5
10
15
30
2.6
20
VGS = 10V
8V
18
VGS = 10V
2.4
2.2
RDS(on) - Normalized
16
14
ID - Amperes
25
Fig. 4. RDS(on) Normalized to ID = 10A Value
vs. Junction Temperature
Fig. 3. Output Characteristics
@ 125ºC
12
10
7V
8
6
4
2.0
I D = 20A
1.8
I D = 10A
1.6
1.4
1.2
1.0
0.8
6V
2
0.6
0
0.4
0
2
4
6
8
10
12
14
16
18
20
22
24
26
-50
-25
0
VDS - Volts
25
50
75
100
125
150
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 10A Value
vs. Drain Current
Fig. 6. Maximum Drain Current vs.
Case Temperature
14
2.4
13
VGS = 10V
TJ = 125ºC
2.2
12
11
2.0
10
ID - Amperes
RDS(on) - Normalized
20
VDS - Volts
VDS - Volts
1.8
1.6
1.4
9
8
7
6
5
4
1.2
3
TJ = 25ºC
2
1.0
1
0.8
0
0
5
10
15
20
25
ID - Amperes
© 2008 IXYS CORPORATION, All rights reserved
30
35
40
-50
-25
0
25
50
75
TC - Degrees Centigrade
100
125
150
IXFR20N120P
Fig. 7. Input Admittance
Fig. 8. Transconductance
35
35
30
30
25
25
g f s - Siemens
ID - Amperes
TJ = - 40ºC
20
TJ = 125ºC
25ºC
- 40ºC
15
25ºC
20
125ºC
15
10
10
5
5
0
0
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
0
9.0
5
10
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
20
25
30
35
240
280
Fig. 10. Gate Charge
16
60
VDS = 600V
14
I D = 10A
50
I G = 10mA
12
40
VGS - Volts
IS - Amperes
15
ID - Amperes
VGS - Volts
30
8
6
TJ = 125ºC
20
10
4
TJ = 25ºC
10
2
0
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
0
1.3
40
VSD - Volts
80
120
160
200
QG - NanoCoulombs
Fig. 12. Maximum Transient Thermal
Impedance
Fig. 11. Capacitance
100,000
1.000
Ciss
10,000
Z(th)JC - ºC / W
Capacitance - PicoFarads
f = 1 MHz
Coss
1,000
0.100
0.010
100
Crss
10
0
5
10
15
20
25
30
35
40
VDS - Volts
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS REF: F_20N120P(86) 04-03-08-B