PolarTM Power MOSFET HiPerFETTM IXFR20N120P VDSS ID25 RDS(on) trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1200 V VGSS Continuous ± 30 V VGSM Transient ± 40 V ID25 TC = 25°C 13 A IDM TC = 25°C, pulse width limited by TJM 50 A IA TC = 25°C 10 A EAS TC = 25°C 1 J dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 15 V/ns PD TC = 25°C 290 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C TL Maximum lead temperature for soldering 300 °C TSOLD Plastic body for 10s 260 °C VISOL 50/60 Hz, RMS, 1 minute 2500 V~ FC Mounting force 20..120/4.5..27 N/lb. 5 g Weight Isolated Tab G = Gate S = Source Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 1200 VGS(th) VDS = VGS, ID = 1mA 3.5 IGSS VGS = ± 30V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) VGS = 10V, ID = 10A, Note 1 © 2008 IXYS CORPORATION, All rights reserved V 6.5 V ± 200 nA 25 μA 5 mA D = Drain Features • Silicon chip on Direct-Copper-Bond • • • • • substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low drain to tab capacitance(<30pF) Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Fast intrinsic Rectifier Advantages • • • TJ = 125°C 1200V 13A Ω 630mΩ 300ns ISOPLUS247 (IXFR) E153432 Symbol TJ = = ≤ ≤ Easy assembly Space savings High power density Applications: z z z z z High Voltage Switched-mode and resonant-mode power supplies High Voltage Pulse Power Applications High Voltage Discharge circuits in Lasers Pulsers, Spark Igniters, RF Generators High Voltage DC-DC converters High Voltage DC-AC inverters 630 mΩ DS99888A (04/08) IXFR20N120P Symbol Test Conditions (TJ = 25°C unless otherwise specified) gfs Characteristic Values Min. Typ. Max. VDS = 20V, ID = 10A, Note 1 10 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss ISOPLUS247 (IXFR) Outline 16 S 11.1 nF 600 pF 60 pF 1.60 Ω 49 ns RGi Gate input resistance td(on) Resistive Switching Times tr VGS = 10V, VDS = 0.5 • VDSS, ID = 10A 45 ns td(off) RG = 1Ω (External) 72 ns 70 ns 193 nC 74 nC 85 nC tf Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 10A Qgd 0.43 °C/W RthJC RthCS 0.15 Source-Drain Diode TJ = 25°C unless otherwise specified) °C/W Characteristic Values Min. Typ. Max. IS VGS = 0V 20 A ISM Repetitive, pulse width limited by TJM 80 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr QRM IRM 300 ns IF = 10A, -di/dt = 100A/μs VR = 100V, VGS = 0V 0.84 μC 9 A Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFR20N120P Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 40 20 VGS = 10V 9V 18 VGS = 10V 9V 35 16 30 8V 12 ID - Amperes ID - Amperes 14 10 8 25 20 8V 15 6 10 4 7V 2 7V 5 0 0 0 2 4 6 8 10 0 12 5 10 15 30 2.6 20 VGS = 10V 8V 18 VGS = 10V 2.4 2.2 RDS(on) - Normalized 16 14 ID - Amperes 25 Fig. 4. RDS(on) Normalized to ID = 10A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 125ºC 12 10 7V 8 6 4 2.0 I D = 20A 1.8 I D = 10A 1.6 1.4 1.2 1.0 0.8 6V 2 0.6 0 0.4 0 2 4 6 8 10 12 14 16 18 20 22 24 26 -50 -25 0 VDS - Volts 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 10A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 14 2.4 13 VGS = 10V TJ = 125ºC 2.2 12 11 2.0 10 ID - Amperes RDS(on) - Normalized 20 VDS - Volts VDS - Volts 1.8 1.6 1.4 9 8 7 6 5 4 1.2 3 TJ = 25ºC 2 1.0 1 0.8 0 0 5 10 15 20 25 ID - Amperes © 2008 IXYS CORPORATION, All rights reserved 30 35 40 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXFR20N120P Fig. 7. Input Admittance Fig. 8. Transconductance 35 35 30 30 25 25 g f s - Siemens ID - Amperes TJ = - 40ºC 20 TJ = 125ºC 25ºC - 40ºC 15 25ºC 20 125ºC 15 10 10 5 5 0 0 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 0 9.0 5 10 Fig. 9. Forward Voltage Drop of Intrinsic Diode 20 25 30 35 240 280 Fig. 10. Gate Charge 16 60 VDS = 600V 14 I D = 10A 50 I G = 10mA 12 40 VGS - Volts IS - Amperes 15 ID - Amperes VGS - Volts 30 8 6 TJ = 125ºC 20 10 4 TJ = 25ºC 10 2 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 1.3 40 VSD - Volts 80 120 160 200 QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 100,000 1.000 Ciss 10,000 Z(th)JC - ºC / W Capacitance - PicoFarads f = 1 MHz Coss 1,000 0.100 0.010 100 Crss 10 0 5 10 15 20 25 30 35 40 VDS - Volts 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: F_20N120P(86) 04-03-08-B