PolarHTTM HiPerFET IXFH 150N15P IXFK 150N15P Power MOSFET VDSS = 150 V ID25 = 150 A RDS(on) ≤ 13 m Ω N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions VDSS TJ = 25° C to 175° C 150 V VDGR TJ = 25° C to 175° C; RGS = 1 MΩ 150 V Maximum Ratings VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25° C 150 A ID(RMS) External lead current limit 75 A IDM TC = 25° C, pulse width limited by TJM 340 A IAR TC = 25° C 60 A EAR TC = 25° C 80 mJ EAS TC = 25° C 2.5 J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤175° C, RG = 4 Ω 10 V/ns PD TC = 25° C 714 W -55 ... +175 °C TJM 175 °C Tstg -55 ... +175 °C 300 °C TJ TL 1.6 mm (0.062 in.) from case for 10 s Md Mounting torque Weight TO-3P TO-264 1.13/10 Nm/lb.in. 5.5 10 g g TO-247 (IXFH) G Symbol Test Conditions (TJ = 25° C, unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0 V, ID = 250 µA 150 VGS(th) VDS = VGS, ID = 4 mA 3.0 IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤300 µs, duty cycle d ≤ 2 % V 5.0 V ±100 nA G 25 1000 µA µA 13 mΩ (TAB) S D (TAB) S G = Gate S = Source D = Drain TAB = Drain Features l l l Fast Intrinsic Diode International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages l l l TJ = 175° C D TO-264 (IXFK) l © 2006 IXYS All rights reserved ≤ 200 ns trr Easy to mount Space savings High power density DS99328E(03/06) IXFH 150N15P IXFK 150N15P Symbol Test Conditions Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. gfs VDS= 10 V; ID = 0.5 ID25, pulse test 55 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 80 S 5800 pF 1730 pF 400 pF 30 ns 33 ns 100 ns Terminals: 1 - Gate 3 - Source 28 ns Dim. 190 nC 40 nC 105 nC Crss td(on) tr VGS = 10 V, VDS = 0.5 VDSS, ID = ID25 td(off) RG = 3.3 Ω (External) tf Qg(on) Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd 1 RthCS TO-247 0.21 ° C/W RthCS TO-264 0.15 ° C/W Source-Drain Diode Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0 V 150 A ISM Repetitive 340 A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.5 V trr IF = 25 A -di/dt = 100 A/µs VR = 100 V 200 ns 0.8 2 3 Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 0.21° C/W RthJC QRM TO-247 (IXFH) Outline 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-264 (IXFK) Outline µC IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 2 - Drain Tab - Drain 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2 IXTK 150N15P IXTQ 150N15P Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 330 150 VGS = 10V 9V 8V 120 270 9V 240 I D - Amperes 7V I D - Amperes VGS = 10V 300 90 6V 60 210 180 8V 150 120 7V 90 30 60 5V 6V 30 0 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 0 2 1 2 3 Fig. 3. Output Characteristics @ 150ºC 150 2.6 7 8 9 10 VGS = 10V 2.4 90 R D S ( o n ) - Normalized I D - Amperes 6 2.8 7V 60 6V 30 2.2 2 I D = 150A 1.8 1.6 I D = 75A 1.4 1.2 1 0.8 5V 0 0.6 0 1 2 3 4 V D S - Volts -50 5 -25 0 25 50 75 100 125 150 175 TJ - Degrees Centigrade Fig. 5. RDS(on) Norm alized to 0.5 ID25 Value vs. Drain Current Fig. 6. Drain Current vs. Case Tem perature 3.4 90 TJ = 175ºC 3.1 2.8 70 2.5 60 2.2 VGS = 10V 1.9 External Lead Current Limit 80 I D - Amperes R D S ( o n ) - Normalized 5 Fig. 4. RDS(on) Norm alized to 0.5 ID25 Value vs. Junction Tem perature VGS = 10V 9V 8V 120 4 V D S - Volts V D S - Volts VGS = 15V 1.6 50 40 30 20 1.3 1 10 TJ = 25ºC 0.7 0 50 100 150 200 I D - Amperes © 2006 IXYS All rights reserved 250 300 0 350 -50 -25 0 25 50 75 100 125 TC - Degrees Centigrade 150 175 IXFH 150N15P IXFK 150N15P Fig. 8. Transconductance Fig. 7. Input Adm ittance 250 110 225 100 200 90 80 g f s - Siemens I D - Amperes 175 150 125 100 75 TJ = 150ºC 50 25ºC 70 50 25ºC 40 150ºC 30 20 -40ºC 25 TJ = -40ºC 60 10 0 0 4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 0 25 50 75 V G S - Volts Fig. 9. Source Current vs. Source-To-Drain Voltage Fig. 10. Gate Charge 10 350 9 300 VDS = 75V I D = 75A 8 I G = 10mA 7 VG S - Volts I S - Amperes 250 200 150 6 5 4 3 100 TJ = 150ºC 2 50 TJ = 25ºC 1 0 0 0.4 0.6 0.8 1 V S D - Volts 1.2 1.4 0 1.6 20 40 60 80 100 120 140 160 180 200 Q G - nanoCoulombs Fig. 12. Forw ard-Bias Safe Operating Area Fig. 11. Capacitance 100,000 1000 f = 1MHz TJ = 175ºC R DS(on) Limit Ciss 10,000 I D - Amperes Capacitance - picoFarads 100 125 150 175 200 225 250 I D - Amperes Coss TC = 25ºC 25µs 100µs 100 1ms 1,000 10ms Crss DC 10 100 0 5 10 15 20 25 V DS - Volts 30 35 40 IXYS reserves the right to change limits, test conditions, and dimensions. 10 100 V D S - Volts 1000 IXFH 150N15P IXFK 150N15P F ig . 1 3 . M a x im u m T r a n s ie n t T h e r m a l R e s is t a n c e R( t h ) J C - ºC / W 1.00 0.10 0.01 1 10 100 Pu ls e W id th - m illis e c o n d s © 2006 IXYS All rights reserved 1000