IXYS IXFT36N60P

PolarHVTM HiPerFET
Power MOSFET
IXFH 36N60P
IXFK 36N60P
IXFT 36N60P
VDSS = 600 V
ID25 = 36 A
Ω
RDS(on) ≤ 190 mΩ
≤ 200 ns
trr
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25° C to 150° C
600
V
VDGR
TJ = 25° C to 150° C; RGS = 1 MΩ
600
V
VGSS
Continuous
±30
V
VGSM
Transient
±40
V
ID25
TC = 25° C
36
A
IDM
TC = 25° C, pulse width limited by TJM
80
A
IAR
TC = 25° C
36
A
EAR
TC = 25° C
50
mJ
EAS
TC = 25° C
1.5
J
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤150° C, RG = 4 Ω
20
V/ns
PD
TC = 25° C
650
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
TJ
TJM
Tstg
Md
Mounting torque (TO-247 & TO-264)
Weight
TO-247
TO-268
TO-264
TL
TSOLD
S
D (TAB)
G
S
D (TAB)
TO-264 AA (IXFK)
6
5
10
g
g
g
300
260
°C
°C
G
D
l
5.0
V
l
±200
nA
100
1000
µA
µA
190
mΩ
VGS(th)
VDS = VGS, ID = 4 mA
3.0
IGSS
VGS = ±30 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤300 µs, duty cycle d ≤ 2 %
D = Drain
Tab = Drain
Features
V
600
(TAB)
S
G = Gate
S = Source
l
VGS = 0 V, ID = 250 µA
l
International standard packages
Fast recovery diode
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Advantages
l
l
l
© 2006 IXYS All rights reserved
D
TO-268 (IXFT) Case Style
Characteristic Values
Min. Typ.
Max.
BVDSS
TJ = 125° C
G
1.13/10 Nm/lb.in.
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Symbol
Test Conditions
(TJ = 25° C, unless otherwise specified)
TO-247 (IXFH)
Easy to mount
Space savings
High power density
DS99383E(02/06)
IXFH 36N60P IXFK 36N60P
IXFT 36N60P
Symbol
Test Conditions
Characteristic Values
(TJ = 25° C, unless otherwise specified)
Min. Typ. Max.
gfs
VDS = 20 V; ID = 0.5 ID25, pulse test
25
Ciss
Coss
39
S
5800
pF
570
pF
30
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
Crss
td(on)
30
ns
tr
VGS = 10 V, VDS = 0.5 ID25
25
ns
td(off)
RG =2 Ω (External)
80
ns
22
ns
102
nC
34
nC
36
nC
tf
Qg(on)
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Qgs
Qgd
0.19 ° C/W
RthJC
RthCS
RthCS
TO-247
TO-264
° C/W
° C/W
0.21
0.15
Source-Drain Diode
Characteristic Values
(TJ = 25° C, unless otherwise specified)
Min. Typ. Max.
Symbol
Test Conditions
IS
VGS = 0 V
36
A
ISM
Repetitive
80
A
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
1.5
V
trr
IF = 25A, -di/dt = 100 A/µs
200
ns
QRM
IRM
VR = 100V
0.8
6.0
TO-247 AD (IXFH) Outline
1
2
3
Dim.
Millimeter
Min. Max.
A
4.7
5.3
A1
2.2
2.54
A2
2.2
2.6
b
1.0
1.4
1.65
2.13
b1
b2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P 3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
TO-264 (IXFK) Outline
µC
A
TO-268 (IXFT)Outline
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
one or moreof the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6,771,478 B2
IXFH 36N60P IXFK 36N60P
IXFT 36N60P
Fig. 2. Extended Output Characteristics
Fig. 1. Output Characteristics
@ 25ºC
@ 25ºC
36
90
VGS = 10V
7V
28
70
24
60
6V
20
VGS = 10V
80
I D - Amperes
I D - Amperes
32
16
12
8
8V
7V
50
40
6V
30
20
4
10
5V
0
5V
0
0
1
2
3
4
5
6
7
0
3
6
9
Fig. 3. Output Characteristics
@ 125ºC
18
21
24
27
30
3.1
VGS = 10V
32
2.8
7V
R D S ( o n ) - Normalized
28
I D - Amperes
15
Fig. 4. RDS(on) Norm alized to 0.5 ID25
Value vs. Junction Tem perature
36
6V
24
20
16
12
5V
8
4
VGS = 10V
2.5
2.2
1.9
I D = 36A
1.6
I D = 18A
1.3
1
0.7
0
0.4
0
2
4
6
8
10
12
14
16
-50
-25
V D S - Volts
50
75
100
125
150
40
VGS = 10V
3.0
25
Fig. 6. Drain Current vs. Case
Tem perature
0.5 ID25 Value vs. ID
3.4
0
TJ - Degrees Centigrade
Fig. 5. RDS(on) Norm alized to
35
TJ = 125ºC
30
2.6
I D - Amperes
R D S ( o n ) - Normalized
12
V D S - Volts
V D S - Volts
2.2
1.8
1.4
25
20
15
10
TJ = 25ºC
1.0
5
0
0.6
0
10
20
30
40
50
I D - Amperes
© 2006 IXYS All rights reserved
60
70
80
90
-50
-25
0
25
50
75
100
TC - Degrees Centigrade
125
150
IXFH 36N60P IXFK 36N60P
IXFT 36N60P
Fig. 8. Transconductance
Fig. 7. Input Adm ittance
55
70
50
60
45
35
30
25
20
TJ = 125ºC
15
25ºC
-40ºC
10
25ºC
125ºC
50
g f s - Siemens
I D - Amperes
40
TJ = -40ºC
40
30
20
10
5
0
0
3.5
4
4.5
5
5.5
6
6.5
0
10
20
V G S - Volts
100
10
90
9
VDS = 300V
80
8
I D = 18A
70
7
I G = 10mA
60
50
40
TJ = 125ºC
50
60
70
6
5
4
3
2
20
TJ = 25ºC
10
1
0
0
0.4
0.5
0.6
0.7
0.8
0.9
V S D - Volts
1
1.1
0
1.2
10
20
30
40
50
60
70
80
90 100 110
Q G - nanoCoulombs
Fig. 12. Maxim um Transient Therm al
Resistance
Fig. 11. Capacitance
1.00
10000
C iss
R( t h ) J C - ºC / W
Capacitance - picoFarads
40
Fig. 10. Gate Charge
VG S - Volts
I S - Amperes
Fig. 9. Source Current vs.
Source-To-Drain Voltage
30
30
I D - Amperes
1000
C oss
100
f = 1MHz
0.10
C rss
10
0.01
0
5
10
15
20
25
V D S - Volts
30
35
40
IXYS reserves the right to change limits, test conditions, and dimensions.
0.1
1
10
100
Pulse Width - milliseconds
1000