PolarHVTM Power MOSFET IXFH 26N50P IXFV 26N50P IXFV 26N50PS VDSS ID25 RDS(on) trr = = ≤ ≤ 500 V 26 A Ω 230 mΩ 200 ns Avalanche Rated Fast Instrinsic Diode Preliminary Data Sheet Symbol Test Conditions VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGSS Continuos ± 30 V VGSM Transient ± 40 V ID25 TC = 25°C 26 A IDM TC = 25°C, pulse width limited by TJM 78 A IAR TC = 25°C 26 A EAR TC = 25°C 40 mJ EAS TC = 25°C 1.0 J IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, 10 V/ns dv/dt Maximum Ratings TC = 25°C TJ TJM Tstg TL 1.6 mm (0.062 in.) from case for 10 s Plastic body Md Mounting torque (TO-247) FC Mounting force (PLUS220SMD) Weight TO-3P PLUS220 & PLUS220SMD Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS = 0 V, ID = 250 µA VGS(th) VDS = VGS, ID = 4 mA IGSS VGS = ±30 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C PLUS220 (IXFV) G 11..65/2.5..15 N/lb 6 5 g g 3.0 V 5.0 V ±100 nA 25 250 µA µA 230 mΩ D (TAB) S PLUS220SMD (IXFV_S) G D (TAB) S 1.13/10 Nm/lb.in. 500 VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % © 2005 IXYS All rights reserved 400 Characteristic Values Min. Typ. Max. TJ = 125°C D (TAB) D TJ ≤ 150°C, RG = 4 Ω PD TO-247 (IXFH) G = Gate S = Source D = Drain TAB = Drain Features z International standard packages z Fast intrinsic diode z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect Advantages z Easy to mount z Space savings z High power density DS99276A(09/05) IXFH 26N50P Symbol Test Conditions gfs Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. VDS = 20 V; ID = 0.5 ID25, pulse test 16 26 S 3600 pF 370 pF C rss 57 pF td(on) 20 ns Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz IXFV 26N50P IXFV 26N50PS TO-247 AD (IXFH) Outline 1 2 Terminals: 1 - Gate 2 - Drain 3 - Source Tab - Drain 3 tr VGS = 10 V, VDS = 0.5 ID25 25 ns td(off) RG = 4 Ω (External) 58 ns tf 20 ns Dim. Qg(on) 60 nC 20 nC A A1 A2 4.7 2.2 2.2 5.3 2.54 2.6 .185 .087 .059 .209 .102 .098 25 nC b b1 b2 1.0 1.65 2.87 1.4 2.13 3.12 .040 .065 .113 .055 .084 .123 C D E .4 20.80 15.75 .8 21.46 16.26 .016 .819 .610 .031 .845 .640 e L L1 5.20 19.81 5.72 20.32 4.50 0.205 .780 0.225 .800 .177 ∅P Q 3.55 5.89 3.65 6.40 .140 0.232 .144 0.252 R S 4.32 6.15 5.49 BSC .170 242 .216 BSC Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd RthJC 0.31 RthCK 0.21 Source-Drain Diode K/W K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS VGS = 0 V 26 A ISM Repetitive 104 A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.5 V t rr IF = 25A, -di/dt = 100 A/µs QRM VR = 100V Millimeter Min. Max. PLUS220 (IXFV) Outline E E1 300 ns 3.3 µC Inches Min. Max. A A1 L2 E1 D1 D L3 L1 PLUS220SMD (IXFV_S) Outline E E1 A A1 L2 L E1 3X b D A3 L3 L4 L L1 2X b e c A2 Terminals: 1 - Gate 3 - Source 2X e A A1 A2 A3 b c D D1 E E1 e L L1 L2 L3 L4 2 - Drain TAB - Drain c A2 Terminals: 1 - Gate 3 - Source A A1 A2 b c D D1 E E1 e L L1 L2 L3 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 2 - Drain TAB - Drain IXFH 26N50P Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics @ 25ºC @ 25ºC 30 60 27 VGS = 10V 24 7V 6V VGS = 10V I D - Amperes I D - Amperes 7V 50 21 18 15 5.5V 12 9 40 6V 30 20 5.5V 5V 6 3 10 5V 4.5V 0 0 0 1 2 3 4 5 6 7 0 8 3 6 9 Fig. 3. Output Characteristics @ 125ºC 15 18 21 24 27 30 Fig. 4. RDS(on) Norm alized to 0.5 ID25 Value vs. Junction Tem perature 30 3.1 VGS = 10V 27 2.8 21 R D S ( o n ) - Normalized 7V 6V 24 I D - Amperes 12 V D S - Volts V D S - Volts 5.5V 18 15 12 5V 9 6 3 VGS = 10V 2.5 2.2 1.9 I D = 26A 1.6 I D = 13A 1.3 1 0.7 4.5V 0 0.4 0 2 4 6 8 10 12 14 16 18 20 -50 0 25 50 75 100 125 TJ - Degrees Centigrade Fig. 5. RDS(on) Norm alized to Fig. 6. Drain Current vs. Case Tem perature 150 27 3.4 24 VGS = 10V 3 -25 V D S - Volts 0.5 ID25 Value vs. ID 21 TJ = 125∫C 2.6 I D - Amperes R D S ( o n ) - Normalized IXFV 26N50P IXFV 26N50PS 2.2 1.8 18 15 12 9 1.4 6 TJ = 25∫C 1 3 0.6 0 0 5 10 15 20 25 30 35 I D - Amperes © 2005 IXYS All rights reserved 40 45 50 55 60 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 IXFH 26N50P Fig. 8. Transconductance Fig. 7. Input Adm ittance 55 40 50 35 g f s - Siemens I D - Amperes 30 25 20 15 TJ = 125∫C 45 TJ = -40∫C 40 25∫C 125∫C 35 30 25 20 15 25∫C -40∫C 10 10 5 5 0 0 3.5 4 4.5 5 5.5 6 0 6.5 5 10 15 V G S - Volts 20 25 30 35 40 45 90 100 I D - Amperes Fig. 9. Source Current vs. Source-To-Drain Voltage Fig. 10. Gate Charge 10 70 VDS = 250V 9 60 VG S - Volts 50 I S - Amperes IXFV 26N50P IXFV 26N50PS 40 30 I D = 13A 7 I G = 10mA 6 5 4 3 TJ = 125∫C 20 8 2 TJ = 25∫C 10 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1 0 10 20 30 V S D - Volts 40 50 60 70 80 Q G - nanoCoulombs Fig. 12. Forw ard-Bias Safe Operating Area Fig. 11. Capacitance 100 10000 C iss I D - Amperes Capacitance - picoFarads R DS(on) Limit 1000 C oss 25µs 100µs 10 1ms 100 TJ = 150∫C C rss f = 1MHz DC 10ms TC = 25∫C 1 10 0 5 10 15 20 25 30 35 40 V D S - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 10 100 V D S - Volts 1000 IXFH 26N50P IXFV 26N50P IXFV 26N50PS Fig. 13. Maxim um Transient Thermal Resistance R ( t h ) J C - ∫C / W 1.00 0.10 0.01 0.1 1 10 Pulse Width - milliseconds © 2005 IXYS All rights reserved 100 1000