Advance Technical Information IXFH 140N10P VDSS ID25 PolarHVTM HiPerFET IXFT 140N10P Power MOSFETs = = = RDS(on) 100 V 140 A Ω 11 mΩ N-Channel Enhancement Mode Fast Intrinsic Diode; Avalanche Rated TO-247 (IXFT) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ VGSM ID25 TC = 25°C ID(RMS) External lead current limit IDM TC = 25°C, pulse width limited by TJM IAR TC = 25°C EAR EAS dv/dt 100 100 V V ±20 V A A 300 A 60 A TC = 25°C 80 mJ TC = 25°C 2.5 J IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, 10 V/ns 600 W G = Gate S = Source -55 ... +175 175 -55 ... +150 °C °C °C Features 300 °C TC = 25°C 1.6 mm (0.062 in.) from case for 10 s TO-268 (IXFT) G z z Md Mounting torque Weight TO-247 TO-268 (TO-247) 1.13/10 Nm/lb.in. 6.0 5.0 Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VGS = 0 V, ID = 250 μA 100 VGS(th) VDS = VGS, ID = 4.0 mA 3.0 IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V V z TJ = 175°C 9 5.0 V ±100 nA 25 500 μA μA 11 mΩ mΩ S D (TAB) D = Drain TAB = Drain International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages z z VGS = 10 V, ID = 0.5 ID25 VGS = 15 V, ID = 300 A Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 % © 2004 IXYS All rights reserved g g Characteristic Values Min. Typ. Max. VDSS RDS(on) D (TAB) S 75 TJ TJM Tstg TL D 140 TJ ≤ 150°C, RG = 4 Ω PD G z Easy to mount Space savings High power density DS99213(02/04) IXFH 140N10P IXFT 140N10P Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. gfs VDS= 10 V; ID = 0.5 ID25, pulse test 45 Ciss Coss 65 S 4700 pF 1850 pF 600 pF TO-247 AD Outline 1 VGS = 0 V, VDS = 25 V, f = 1 MHz C rss td(on) 35 ns tr VGS = 10 V, VDS = 0.5 VDSS, ID = 60 A 50 ns td(off) RG = 4 Ω (External) 85 ns 26 ns 155 nC 33 nC 85 nC tf 2 3 Terminals: 1 - Gate 3 - Source Dim. Qg(on) Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd RthJC RthCK 0.25 K/W (TO-247) Source-Drain Diode 0.21 K/W Characteristic Values (TJ = 25°C, unless otherwise specified) Min. typ. Max. Symbol Test Conditions IS VGS = 0 V 140 A ISM Repetitive 300 A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 % 1.5 V t rr IF = 25 A -di/dt = 100 A/μs VR = 50 V QRM IRM Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 120 ns 0.8 6 μC A 2 - Drain Tab - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-268 Outline IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,850,072 4,835,592 4,931,844 4,881,106 5,034,796 5,017,508 5,063,307 5,049,961 5,237,481 5,187,117 5,381,025 5,486,715 6,404,065B1 6,306,728B1 6,162,665 6,534,343 6,583,505 6,259,123B1 6,306,728B1 6,683,344 IXFH 140N10P IXFT 140N10P Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 300 140 VGS = 10V 9V 120 VGS = 10V 270 240 9V 210 I D - Amperes I D - Amperes 100 80 8V 60 7V 40 180 150 8V 120 90 7V 60 20 6V 30 6V 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0 1.6 0 V D S - Volts Fig. 3. Output Characteristics @ 150ºC 2 4DS5 6 V - Volts 7 8 9 10 2.4 VGS = 10V 9V 100 8V 80 7V 60 6V 40 VGS = 10V 2.2 R D S ( o n ) - Normalized 120 20 2 1.8 I D = 140A 1.6 1.4 I D = 70A 1.2 1 0.8 5V 0 0.6 0 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 -50 -25 0 V D S - Volts 90 2.75 80 75 100 125 150 175 I D - Amperes 2.25 2 VGS = 10V 1.5 VGS = 15V 1.25 External Lead Current Limit 70 TJ = 175ºC 1.75 50 Fig. 6. Drain Curre nt vs . Cas e Tem pe rature 3 2.5 25 TJ - Degrees Centigrade Fig. 5. RDS(on) Norm alized to 0.5 ID25 Value vs . Drain Curre nt R D S ( o n ) - Normalized 3 Fig. 4. RDS(on) Norm alize d to 0.5 ID25 Value vs. Junction Te m perature 140 I D - Amperes 1 60 50 40 30 20 TJ = 25ºC 10 1 0 0.75 0 50 100 150 200 I D - Amperes © 2004 IXYS All rights reserved 250 300 350 -50 -25 0 25 50 75 100 125 TC - Degrees Centigrade 150 175 IXFH 140N10P IXFT 140N10P Fig. 8. Transconductance Fig. 7. Input Adm ittance 250 90 225 80 200 70 150 125 100 TJ = 150ºC 75 60 g f s - Siemens I D - Amperes 175 TJ = -40ºC 40 25ºC 150ºC 30 25ºC 50 50 20 -40ºC 10 25 0 0 4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 9 9.5 0 40 80 120 V G S - Volts Fig. 9. Source Current vs. Source-To-Drain Voltage 200 240 280 320 120 140 160 Fig. 10. Gate Charge 10 300 VDS = 50V 9 250 I D = 70A 8 I G = 10mA 7 200 VG S - Volts I S - Amperes 160 I D - Amperes 150 6 5 4 100 3 TJ = 150ºC 50 2 TJ = 25ºC 1 0 0 0.4 0.6 0.8 1 1.2 1.4 1.6 0 20 40 V S D - Volts 60 80 100 Q G - nanoCoulombs Fig. 12. Forw ard-Bias Safe Operating Area Fig. 11. Capacitance 10000 1000 1000 TC = 25ºC R DS(on) Limit C iss I D - Amperes Capacitance - picoFarads TJ = 175ºC C oss 25µs 100µs 100 1ms 10ms C rss DC f = 1MHz 100 10 0 5 10 15 20 25 30 35 40 1 10 V DS - Volts 100 1000 V D S - Volts IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,850,072 4,835,592 4,931,844 4,881,106 5,034,796 5,017,508 5,063,307 5,049,961 5,237,481 5,187,117 5,381,025 5,486,715 6,404,065B1 6,306,728B1 6,162,665 6,534,343 6,583,505 6,259,123B1 6,306,728B1 6,683,344 IXFH 140N10P IXFT 140N10P F ig . 1 3 . M a x im u m T r a n s ie n t T h e r m a l R e s is t a n c e R( t h ) J C - ºC / W 1.00 0.10 0.01 0.1 1 10 Pu ls e W id th - m illis e c o n d s © 2004 IXYS All rights reserved 100 1000