MKG 40RK600LB Buck / Boost Tpology ID25 = 54A VDSS =600V RDS(on) max= 41mW CoolMOS™ 1) with fast SONIC Diode ISOPLUS™ - electrically isolated surface to heatsink Surface Mount Power Device Part number MKG40RK600LB D Iso G 3x K E72873 A iv T G 2x S e la to ted he su at rfa sin ce k 2x D A D 3x K t 2x S D C6 MOSFET •Fast CoolMOS -very low on-resistance - low gate charge - avalanche rated for unclamped inductive switching (UIS) Applications: •Buck / boost chopper •PFC stage • Forward converter Package: SMPD •isolated surface to heatsink •low coupling capacity between pins and heatsink •PCB space saving •enlarged creepage towards heatsink •application friendly pinout •low inductive current path •high reliability 1) CoolMOS™ is a trademark of Infineon Technologies AG. t e n t ™ 1) a Features / Advantages: IXYS reserves the right to change limits, test conditions and dimensions. © 2013 IXYS All rights reserved Data according ot IEC 60747 and per semiconductor unless otherwise specified 20131121 1-4 MKG 40RK600LB MOSFET T Ratings Symbol Definitions VDSS drain source breakdown voltage Conditions min. up to TVJ = 150°C 600 V VGS gate source voltage continuous transient TVJ = 25°C ±20 ±30 V V ID25 ID80 ID100 drain current TC = 25°C TC = 80°C TC = 100°C 54 41 34 A A A EAS IA non-repetetive avalanche energy single pulse TVJ = 25°C 1.95 13.4 J A dV /dt rate of rise of voltage IS > IDM; VDD < 400 V TVJ = 25°C 15 V/ns RDSon static drain source on resistance ID = 44 A; VGS = 10 V (Chip) TVJ = 25°C 37 41 mΩ VGS(th) gate threshold voltage ID = 3 mA; VDS = VGS TVJ = 25°C 3 3.5 V IDSS drain source leakage current VDS = VDSS; VGS = 0 V TVJ = 25°C TVJ = 150°C 5 50 µA µA ±100 nA 6.5 360 gate source leakage current VDS = 0 V; VGS = ±20 V input capacitance output capacitance VGS = 0 V; VDS = 100 V; f = 1 MHz TVJ = 25°C TVJ = 125°C Qg Qgs Qgd total gate charge gate source charge gate drain (Miller) charge VDS = 480 V; ID = 44 A VGS = 10 V; RG = 1.6 Ω TVJ = 25°C td(on) tr td(off) tf Eon Eoff Erec(off) turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse reverse recovery losses at turn-off RthJC RthJH thermal resistance junction to case thermal resistance junction to heatsink iv Inductive switching boost mode with diode D VDS = 380 V; ID = 44 A VGS = 13 V; RG = 1.6 Ω Definitions IS25 IS80 continuous source current VSD forward voltage drop trr QRM IRM reverse recovery time reverse recovery charge (intrinsic diode) max. reverse recovery current max. repetitive reverse voltage IF = 44 A; VGS = 0 V TVJ = 25°C typ. 0.9 TVJ = 25°C Conditions min. TVJ = 25°C DC DC TC = TC = typ. TVJ = 25°C TVJ = 125°C IR reverse current VR = VRRM TVJ = 25°C TVJ = 125°C max. reverse recovery current IF = 30 A; VR = 350 V -di/dt = 240 A/µs TVJ = 100°C tbd trr reverse recovery time IF = 1 A; VR = 30 V; -di/dt = 100 A/µs TVJ = 100°C tbd RthJC RthJH thermal resistance junction to case thermal resistance junction to heatsink n IF = 44 A (Chip) e A A 1.1 V 950 ns µC A Ratings forward voltage t K/W K/W max. 32 62 VF © 2013 IXYS All rights reserved ns ns ns ns mJ mJ mJ 70 tbd 25°C 80°C continuous source current IXYS reserves the right to change limits, test conditions and dimensions. nC nC nC Ratings min. IF25 IF80 IRM 190 0.4 TC = TC = a t Definitions VRRM nF pF 0.6 IF = 44 A; VR = 400 V -diF /dt = 100 A/µs max. tbd tbd tbd tbd tbd tbd tbd TVJ = 25°C Conditions t Symbol Symbol 290 36 150 with heatsink compound; IXYS test setup Source-Drain Diode of MOSFET T Diode D 2.5 e IGSS Ciss Coss typ. 25°C 80°C 1.70 1.65 max. 600 V 65 45 A A 2.0 V V 100 8 µA mA A ns 0.6 with heatsink compound; IXYS test setup Data according ot IEC 60747 and per semiconductor unless otherwise specified 0.85 K/W K/W 20131121 2-4 MKG 40RK600LB Package SMPD Ratings Symbol Definitions Conditions Tstg TVJ storage temperature virtual junction temperature min. typ. -55 -55 max. 125 150 Weight 8 FC mounting force with clip d Spp/App d Spb/Apb creepage distance on surface / striking distance through air terminal to terminal terminal to backside VISOL isolation voltage t = 1 second t = 1 minute CP coupling capacity between shorted terminals and backside metal 40 °C °C g 130 N 1.65 mm 4.0 mm 50/60 Hz; RMS; IISOL < 1 mA CTI 3000 2500 V V 90 pF 1 mΩ 400 Rpin-chip V = (RDSon + 2·R)·ID resp. V = VF + 2·R·IF resistance pin to chip UL Logo ~ ~ ~ Part number Backside DCB Assembly line M = MOSFET K = CoolMOS™ 1) G = C6 40 = Current Rating [A] RK = Boost/Brake Chopper 600 = Reverse Voltage [V] LB = SMPD-B e Part number Date code XXXXXXXXXX yywwA Part # Date Code Assembly line Lot # Split Lot Individual # Pin 1 identifier t Digits 1 to 19: 20 to 23: 24 to 25: 26 to 31: 32: 33 to 36: iv Data Matrix Code Marking on Product MKG40RK600LB-TRR MKG40RK600LB Delivering Mode Base Qty Ordering Code Tape&Reel 200 514630 n t Standard Part Name a Ordering Equivalent Circuits for Simulation V0 R0 e I *on die level threshold voltage R0 max slope resistance * V mW t V0 max IXYS reserves the right to change limits, test conditions and dimensions. © 2013 IXYS All rights reserved Data according ot IEC 60747 and per semiconductor unless otherwise specified 20131121 3-4 MKG 40RK600LB Outlines SMPD Dimensions in mm (1 mm = 0.0394“) A(8:1) 5,5 0,1 2) (6x) 1 0,05 0 + 0,15 2° 0,1 18 0,1 seating plane (3x) 2 0,05 9 0,1 8 4 0,05 0,55 0,1 9 iv 32,7 0,5 23 0,2 e 7 2) 4,85 0,2 0,5 0,1 1) 2 0,2 25 0,2 3) 0,05 3 2 1 A t 6 5 4 Pin number 5,5 0,1 13,5 0,1 Notes: 1) potrusion may add 0.2 mm max. on each side 2) additional max. 0.05 mm per side by punching misalignement or overlap of dam bar or bending compression 3) DCB area 10 to 50 µm convex; position of DCB area in relation to plastic rim: ±25 µm (measured 2 mm from Cu rim) 4) terminal plating: 0.2 - 1 µm Ni + 10 - 25 µm Sn (galv.) cutting edges may be partially free of plating a 2,75 0,1 t 16,25 0,1 T D 6 IXYS reserves the right to change limits, test conditions and dimensions. © 2013 IXYS All rights reserved 9 7, 8 t e n 19 0,1 4, 5 1, 2, 3 Data according ot IEC 60747 and per semiconductor unless otherwise specified 20131121 4-4