MIXA100PF1200TMH preliminary XPT IGBT Module VCES = 2x 1200 V I C25 = 155 A VCE(sat) = 1.8 V Phase leg + free wheeling Diodes + NTC Part number MIXA100PF1200TMH Backside: isolated 8 7 6 5 4 2 9 3 1 Features / Advantages: Applications: Package: ● High level of integration ● Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - low EMI - square RBSOA @ 3x Ic ● Thin wafer technology combined with the XPT design results in a competitive low VCE(sat) ● Temperature sense included ● SONIC™ diode - fast and soft reverse recovery - low operating forward voltage ● AC motor drives ● Pumps, Fans ● Washing machines ● Air-conditioning system ● Inverter and power supplies ● Housing: MiniPack2 ●_"Mini" package ●_Assembly height is 17 mm ●_Insulated base plate ●_Pins suitable for wave soldering and PCB mounting ●_Assembly clips available - IXKU 5-505 screw clamp - IXRB 5-506 click clamp IXYS reserves the right to change limits, conditions and dimensions. © 2012 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20120302a MIXA100PF1200TMH preliminary Ratings IGBT Symbol VCES Definition collector emitter voltage VGES max. DC gate voltage VGEM max. transient collector gate voltage I C25 collector current Conditions min. TVJ = 25°C TC = 25°C I C80 Ptot total power dissipation VCE(sat) collector emitter saturation voltage I C = 100A; VGE = 15 V VGE(th) gate emitter threshold voltage IC = 4 I CES collector emitter leakage current VCE = VCES; VGE = 0 V mA; VGE = VCE gate emitter leakage current VGE = ±20 V Q G(on) total gate charge VCE = 600 V; VGE = 15 V; IC = 100 A t d(on) turn-on delay time tr current rise time t d(off) turn-off delay time tf current fall time Eon turn-on energy per pulse Eoff turn-off energy per pulse RBSOA reverse bias safe operating area VGE = ±15 V; R G = 6.8 Ω SCSOA short circuit safe operating area VCEmax = 1200 V t SC short circuit duration VCE = 900 V; VGE = ±15 V R G = 6.8 Ω; non-repetitive inductive load I SC R thJC thermal resistance junction to case R thCH thermal resistance case to heatsink ±20 V ±30 V 155 A 108 A 500 W 2.1 V 6.5 V 0.3 mA TVJ = 25°C 1.8 TVJ = 25°C V 2.1 5.4 5.9 TVJ = 25°C mA 0.6 500 TVJ = 125°C VCE = 600 V; IC = 100 A VGE = ±15 V; R G = 6.8 Ω nA 295 nC 70 ns 40 ns 250 ns 100 ns 8.5 mJ 11 mJ TVJ = 125°C VCEmax = 1200 V short circuit current Unit V TC = 25°C TVJ = 125°C I GES max. 1200 TC = 80°C TVJ = 125°C I CM typ. TVJ = 125°C 300 A 10 µs A 400 0.25 K/W K/W 0.08 Diode VRRM max. repetitive reverse voltage TVJ = 25°C 1200 V I F25 forward current TC = 25°C 135 A TC = 80°C 90 A TVJ = 25°C 2.20 V * mA I F80 VF forward voltage I F = 100 A IR reverse current VR = VRRM TVJ = 125°C * not applicable, see Ices value above Q rr reverse recovery charge I RM max. reverse recovery current t rr reverse recovery time E rec reverse recovery energy R thJC thermal resistance junction to case R thCH thermal resistance case to heatsink IXYS reserves the right to change limits, conditions and dimensions. © 2012 IXYS all rights reserved TVJ = 25°C * mA 12.5 µC 100 A TVJ = 125°C VR = 600 V -di F /dt = 1600 A/µs IF = 100 A; VGE = 0 V TVJ = 125°C V 1.95 350 ns 4 mJ 0.4 K/W 0.13 Data according to IEC 60747and per semiconductor unless otherwise specified K/W 20120302a MIXA100PF1200TMH preliminary Package Ratings MiniPack2 Symbol I RMS Definition Conditions RMS current per terminal min. typ. Tstg storage temperature -40 125 °C T VJ virtual junction temperature -40 150 °C Weight FC 37 40 mounting force with clip VISOL isolation voltage d Spp/App d Spb/Apb max. Unit A g 80 N t = 1 second 3000 V t = 1 minute 2500 V terminal to terminal 7.5 7.5 mm terminal to backside 12.7 12.0 mm creepage distance on surface | striking distance through air Part number M I X A 100 PF 1200 T MH xxxxx ywwA XXXXXXXX = = = = = = = = = Module IGBT XPT IGBT Gen 1 / std Current Rating [A] Phase leg + free wheeling Diodes Reverse Voltage [V] Thermistor \ Temperature sensor MiniPack2 Logo Part Name Date UL 2D Data Matrix Code Production Code Location Ordering Standard Part Number MIXA100PF1200TMH Marking on Product MIXA100PF1200TMH Delivery Mode Box Quantity 20 Code No. 511931 105 Temperature Sensor NTC Symbol Definition Conditions R 25 resistance TVJ = 25° B 25/50 temperature coefficient typ. min. 5 4.75 max. Unit 5.25 kΩ 3375 K 104 R [ ] 103 Equivalent Circuits for Simulation I V0 R0 T VJ = 150°C * on die level IGBT Diode 102 0 V 0 max threshold voltage 1.1 1.25 V R 0 max slope resistance * 13.8 8.5 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2012 IXYS all rights reserved 25 50 75 100 TC [°C] 125 150 Typ. NTC resistance vs. temperature Data according to IEC 60747and per semiconductor unless otherwise specified 20120302a MIXA100PF1200TMH preliminary Outlines MiniPack2 0,5 A 48,26 2,2 27,94 12 40,64 o0,63 17 ` 0,35 1,2 20,5 ` 0,5 44,45 8,15 ` 0,35 Ø4 A(2:1) 3,6 26,67 55,9 20,32 40,6 16,51 14 8,89 12 3,85 2 1 9 1 3 3 3 1 2 2 2 6 5 4 8 9 2 2 2 3 3 3 1 1 1 1 2 2 1 1 3 3 3 45,6 1 1 12,4 1 19 8 2 2 25,6 2 7 5 4 39,6 6 8,89 10,19 13,97 17,78 22,86 27,94 31,75 7 23 26,6 1,8 1,4 24,13 22,86 3 3 3 Bemerkungen: 1) Toleranz für Pin Positionen entsprechend j n 0,4 2) Vorgesehen für die Montage auf Leiterplatten mit einer Dicke von 1,6 ±0,2mm Remarks: 1) Pin positions with tolerance j n 0.4 2) Mounting on PCB with thickness of 1.6 ±0.2mm 8 7 6 5 2 9 IXYS reserves the right to change limits, conditions and dimensions. © 2012 IXYS all rights reserved 4 3 1 Data according to IEC 60747and per semiconductor unless otherwise specified 20120302a MIXA100PF1200TMH preliminary IGBT 200 200 VGE = 15 V 150 IC 200 13 V VGE = 15 V 17 V 19 V 11 V 160 150 IC TVJ = 25°C 100 TVJ = 125°C [A] IC TVJ = 125°C 100 [A] 120 [A] 80 9V 50 TVJ = 125°C 50 40 TVJ = 25°C 0 0 0 1 2 3 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 VCE [V] VCE [V] VGE [V] Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics Fig. 3 Typ. tranfer characteristics 20 20 IC = 100 A VCE = 600 V 16 RG = 6.8 VCE = 600 V VGE = ±15 V TVJ = 125°C 16 15 14 12 VGE 12 E 10 [V] [mJ] Eoff 5 4 100 200 300 400 10 Eon 8 Eon 0 0 Eoff E [mJ] 8 0 IC = 100 A VCE = 600 V VGE = ±15 V TVJ = 125°C 6 0 40 80 120 160 200 0 4 8 12 16 20 24 RG [ ] QG [nC] IC [A] Fig. 4 Typ. turn-on gate charge Fig. 5 Typ. switching energy vs. collector current Fig. 6 Typ. switching energy vs. gate resistance 1 ZthJC 0.1 [K/W] 0.01 0.001 0.01 0.1 1 10 tp [s] Fig. 7 Typ. transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2012 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20120302a MIXA100PF1200TMH preliminary Diode 200 24 160 TVJ = 125°C VR = 600 V 140 20 200 A 150 TVJ = 125°C 100 A 120 Qrr 16 IF IRM 100 200 A VR = 600 V 50 A 100 100 A [μC] 12 [A] 80 TVJ = 125°C 50 TVJ = 25°C 0 0.0 50 A 8 60 4 0.5 1.0 [A] 1.5 2.0 2.5 3.0 VF [V] Fig. 1 Typ. Forward current versusVF 40 1200 1400 1600 1800 2000 1200 1400 1600 1800 2000 diF /dt [A/μs] diF /dt [A/μs] Fig. 3 Typ. peak reverse current IRM versus di/dt Fig. 2 Typ. reverse recov. charge Qrr versus di/dt 700 8 TVJ = 125°C TVJ = 125°C 600 200 A VR = 600 V VR = 600 V 6 500 200 A trr 400 [ns] 300 100 A 200 50 A Erec 100 A 4 [mJ] 50 A 2 100 0 0 1200 1400 1600 1800 2000 1200 1400 1600 1800 2000 diF /dt [A/μs] Fig. 4 Dynamic parameters Qrr, IRM versusTVJ diF /dt [A/μs] Fig. 6 Typ. recovery energy Erec versus di/dt Fig. 5 Typ. recovery time trr versus di/dt 1 ZthJC 0.1 [K/W] 0.01 0.001 0.01 0.1 1 10 tp [s] Fig. 7 Typ. transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2012 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20120302a