MIXA50PM650TMI

MIXA50PM650TMI
tentative
XPT IGBT Module
VCES
= 2x 650 V
I C25
=
75 A
VCE(sat) =
1,6 V
Phase leg with Multi Level
Part number
MIXA50PM650TMI
Backside: isolated
N
Th1
E4 G4
E3 G3
E2 G2
E1 G1
Th2
U
Features / Advantages:
Applications:
Package: MiniPack2B
● High level of integration
● Rugged XPT design (Xtreme light Punch Through)
results in:
- short circuit rated for 10 µsec.
- very low gate charge
- low EMI
- square RBSOA @ 3x Ic
● Thin wafer technology combined with the XPT design
results in a competitive low VCE(sat)
● Temperature sense included
● SONIC™ diode
- fast and soft reverse recovery
- low operating forward voltage
● AC motro control
● AC servo and robot drives
● UPS
● Solar Inverter
● Isolation Voltage: 3000 V~
● Compatible to EASY2B package
● Pins for pressfit connection
● With DCB base
IXYS reserves the right to change limits, conditions and dimensions.
© 2015 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20150810
MIXA50PM650TMI
tentative
Ratings
IGBT
Symbol
VCES
Definition
VGES
max. DC gate voltage
VGEM
max. transient gate emitter voltage
I C25
collector current
Conditions
min.
TVJ =
collector emitter voltage
TC = 25°C
I C80
Ptot
total power dissipation
VCE(sat)
collector emitter saturation voltage
typ.
25°C
IC =
50 A; VGE = 15 V
V
±30
V
75
A
50
A
TC = 25°C
188
W
1,8
V
TVJ = 25°C
TVJ
1,6
= 125 °C
gate emitter threshold voltage
I C = 0,8 mA; VGE = VCE
TVJ = 25°C
I CES
collector emitter leakage current
VCE = VCES; VGE = 0 V
TVJ = 25°C
TVJ = 125 °C
V
1,9
4
4,8
5,5
0,1
0,1
gate emitter leakage current
VGE = ±20 V
Q G(on)
total gate charge
VCE = 300 V; VGE = 15 V; IC =
t d(on)
turn-on delay time
tr
current rise time
t d(off)
turn-off delay time
tf
current fall time
Eon
turn-on energy per pulse
Eoff
turn-off energy per pulse
RBSOA
reverse bias safe operating area
inductive load
50 A
TVJ = 125 °C
50 A
VGE = ±15 V; R G = 15 Ω
VGE = ±15 V; R G = 15 Ω
short circuit safe operating area
VCEma = 650 V
t SC
short circuit duration
VCE = 360 V; VGE = ±15 V
I SC
short circuit current
R G = 15 Ω; non-repetitive
R thJC
thermal resistance junction to case
R thCH
thermal resistance case to heatsink
mA
nA
70
nC
70
ns
50
ns
100
ns
40
ns
1,2
mJ
1,7
mJ
TVJ = 125 °C
VCEma = 650 V
SCSOA
V
mA
500
I GES
I CM
±20
TC = 80 °C
VGE(th)
VCE = 300 V; IC =
max. Unit
650
V
TVJ = 125 °C
100
A
10
µs
A
200
0,8 K/W
K/W
0,27
Diode
VRRM
max. repetitive reverse voltage
TVJ = 25°C
650
V
IF25
forward current
TC = 25°C
55
A
TC = 80 °C
40
A
TVJ = 25°C
2,00
V
0,1
mA
IF 80
VF
forward voltage
IF =
50 A
IR
reverse current
VR = VRRM
Q rr
reverse recovery charge
I RM
max. reverse recovery current
t rr
reverse recovery time
E rec
reverse recovery energy
R thJC
thermal resistance junction to case
R thCH
thermal resistance case to heatsink
TVJ = 125°C
TVJ = 125°C
IXYS reserves the right to change limits, conditions and dimensions.
© 2015 IXYS all rights reserved
VR = 300 V
-di F /dt = 900 A/µs
IF =
50 A; VGE = 0 V
1,80
TVJ = 25°C
TVJ = 125°C
V
0,5
mA
4,5
µC
45
A
150
ns
1
mJ
1,2 K/W
0,4
Data according to IEC 60747and per semiconductor unless otherwise specified
K/W
20150810
MIXA50PM650TMI
tentative
Package
Ratings
MiniPack2B
Symbol
I RMS
Definition
Conditions
RMS current
per terminal
min.
TVJ
virtual junction temperature
-40
150
°C
T op
operation temperature
-40
125
°C
Tstg
storage temperature
-40
125
°C
2
mounting torque
d Spp/App
Unit
A
Rpin-chip
resistance pin to chip
Tvjm
max. virtual junction temperature
Logo
Date Code
mm
terminal to backside
11,5
10,0
mm
3000
V
2500
V
mΩ
175
°C
Part description
Location
M
I
X
A
50
PM
650
T
MI
XXXXXXXXXXX
Ordering
Standard
6
V = VCEsat + 2·R·IC resp. V = VF + 2·R·IF
yywwx
Part number
Nm
5,0
50/60 Hz, RMS; IISOL ≤ 1 mA
t = 1 minute
2,2
6,3
t = 1 second
isolation voltage
g
terminal to terminal
creepage distance on surface | striking distance through air
d Spb/Apb
VISOL
max.
39
Weight
MD
typ.
2D Data Matrix
Ordering Number
MIXA50PM650TMI
=
=
=
=
=
=
=
=
=
Module
IGBT
XPT IGBT
Gen 1 / std
Current Rating [A]
Phase leg with Multi Level
Reverse Voltage [V]
Thermistor \ Temperature sensor
MiniPack2B
Marking on Product
MIXA50PM650TMI
Delivery Mode
Box
Quantity
20
Code No.
512023
105
Temperature Sensor NTC
Symbol
Definition
Conditions
R25
resistance
TVJ = 25°
B25/50
temperature coefficient
typ.
min.
4,75
5
max.
Unit
5,25
kΩ
3375
K
104
R
[ ]
103
Equivalent Circuits for Simulation
I
V0
R0
T VJ = 150 °C
* on die level
IGBT
Diode
102
0
V 0 max
threshold voltage
1,1
1,2
V
R0 max
slope resistance *
21
18
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
© 2015 IXYS all rights reserved
25
50
75
100
TC [°C]
125
150
Typ. NTC resistance vs. temperature
Data according to IEC 60747and per semiconductor unless otherwise specified
20150810
MIXA50PM650TMI
tentative
12 ±0.35
16.4 ±0.5
Outlines MiniPack2B
1.4 ±0.5
51 ±0.1
48
44.8
41.6
62.8 ±0.5
53 ±0.1
48 ±0.3
42 ±0.15
38.4
32
28.8
25.6
22.4
19.2
16
12.8
16.4±0.2
2.3 -0.1 x 8.5 +0.3
22.7 ±0.5
9.6
3.2
E3'
G3
12.8
25.6
28.8
32
16
6.4
3.2
56.7 ±0.3
U
U
U
U
U
U
U
U
G2
E2
T1
E1
T2
G1
N
E4
Pin positions with tolerance
G4
N
N
N
N
N
Ø 0.4
N
Th1
E4 G4
E3 G3
E2 G2
E1 G1
Th2
U
IXYS reserves the right to change limits, conditions and dimensions.
© 2015 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20150810