CY25BAH-8F Nch IGBT for Strobe Flasher REJ03G0284-0100 Rev.1.00 Aug.20.2004 Features • • • • Small surface mount package (TSSOP-8) VCES : 400 V ICM : 150 A Drive voltage : 2.5 V Outline TSSOP-8 4 3 2 1 5 8 1,2,3,4 : Collector 5,6 : Emitter 7 : Emitter (for the gate drive) 8 : Gate 4 1 5 Note: 6 7 8 Pin 7 is for the gate drive only. Note that current from the main circuit cannot flow into this section.(Please see page 3.) Applications Strobe flasher for cameras Maximum Ratings (Tc = 25°C) Parameter Collector-emitter voltage Gate-emitter voltage Peak gate-emitter voltage Collector current (Pulse) Junction temperature Storage temperature Rev.1.00, Aug.20.2004, page 1 of 4 Symbol VCES VGES VGEM ICM Ratings 400 ±4 ±6 150 Unit V V V A Tj Tstg – 40 to +150 – 40 to +150 °C °C Conditions VGE = 0 V VCE = 0 V VCE = 0 V, tw = 10 s CM = 400 µF (see performance curve) CY25BAH-8F Electrical Characteristics (Tch = 25°C) Parameter Collector-emitter breakdown voltage Collector-emitter leakage current Gate-emitter leakage current Gate-emitter threshold voltage Collector-emitter saturation voltage Input capacitance Symbol V(BR)CES ICES IGES VGE(th) VCE(sat) Cies Min. 450 — — 0.4 — — Typ. — — — 0.6 3.5 6500 Max. — 10 ±10 1.2 7.0 — Unit V µA µA V V pF Performance Curves Maximum Pulse Collector Current (Conductive Capability in Strobe Flasher Applications) Pulse Collector Current ICM (A) 160 °C CM µF RG = 68Ω 120 80 40 0 0 1 2 3 4 5 Gate-Emitter Voltage VGE (V) Rev.1.00, Aug.20.2004, page 2 of 4 6 Test conditions IC = 1 mA, VGE = 0 V VCE = 400 V, VGE = 0 V VGE = ±6 V, VCE = 0 V VCE = 10 V, IC = 1 mA IC = 150 A, VGE = 2.5 V VCE = 25 V, VGE = 10 V, f = 1MHz CY25BAH-8F Application Example VCM Xe Tube VGG Drive Circuit CM 4 + – 3 2 1 RG(on) 10 Ω RG(off) 68 Ω 5 6 7 8 Control Signal GE Ω VCM Recommended Operation Maximum Operation Conditions Conditions 330 V 350 V ICP 130 A 150 A CM 300 µF 400 µF VGE 2.85 V 2.5 V Precautions on Usage 1. IGBT has MOS structure and its gate is insulated by thin silicon oxide. So please handle carefully to protect the device from electrostatic charge. 2. Gate drive voltage during on-period must be applied to satisfy the rating of maximum pulse collector current. And peak reverse gate current during turn-off must become less than 25 mA. (In general, when RG (off) = 68Ω, it is satisfied.) 3. The ground of the drive signal must be connected to pin 7 only. If the emitter terminal pins 5 and 6 in which a large currents flow are given to the device as the drive signal emitter, the device may be damaged due to large currents since the specified gate voltage is not applied to the IGBT within the device. 4. The operation life should be endured 5,000 shots under the charge current (IXe ≤ 150 A : full luminescence condition) of main capacitor (CM = 400 µF) which can endure repeated discharge of 5,000 times. Repetition period under full luminescence condition is over 3 seconds. 5. Total operation hours applied to the gate-emitter voltage must be within 5,000 hours. Rev.1.00, Aug.20.2004, page 3 of 4 CY25BAH-8F Package Dimensions 8P2J(TSSOP-8) Mass (g) (reference value) JEDEC Code Lead Material 0.035 Cu alloy 6.4 ± 0.2 4.4 ± 0.1 EIAJ Package Code A +0.05 (1) 0.1 ± 0.1 3 ± 0.1 0.65 0.5 ± 0.2 1.2MAX 0.15 - 0.01 0.1 0.25 Symbol 0.13 Dimension in Millimeters Min Typ Max A A1 A2 b D E e x y y1 ZD ZE 0°~ 8° [Detail A(20/1)] Note 1) The dimensional figures indicate representative values unless otherwise the tolerance is specified. Order Code Lead form Standard packing Quantity Standard order code Surface-mounted type Taping 3000 Type name – T +Direction (1 or 2) +3 Note : Please confirm the specification about the shipping in detail. Rev.1.00, Aug.20.2004, page 4 of 4 Standard order code example CY25BAH-8F-T13 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. 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