IXFR64N50P PolarTM Power MOSFET HiPerFETTM VDSS ID25 RDS(on) trr (Electrically Isolated Back Surface) = = ≤ ≤ 500V 37A Ω 95mΩ 200ns N-Channel Enhancement Mode Avalanche Rated ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 500 V VGSS Continuous ±30 V VGSM Transient ±40 V ID25 TC = 25°C IDM TC = 25°C, pulse width limited by TJM IA 37 A 150 A TC = 25°C 64 A EAS TC = 25°C 2.5 J dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 20 V/ns PD TC = 25°C 300 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C 2500 3000 V~ V~ 20..120 / 4.5..27 N/lb. 5 g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s VISOL 50/60 Hz, RMS IISOL ≤ 1mA Md Mounting Force t = 1min t = 1s Weight Isolated Tab G = Gate S = Source D = Drain Features International Standard Package Fast Intrinsic Rectifier Avalanche Rated Low RDS(ON) and QG Low Package Inductance Advantages High Power Density Easy to Mount Space Savings Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 500 VGS(th) VDS = VGS, ID = 8mA 3.0 IGSS VGS = ±30V, VDS = 0V IDSS VDS = VDSS, VGS= 0V RDS(on) VGS = 10V, ID = 32A, Note 1 Applications V 5.5 V ±200 nA TJ = 125°C © 2009 IXYS CORPORATION, All Rights Reserved 25 μA 1 mA Switched-Mode and Resonant-Mode Power Supplies DC-DC Converters Laser Drivers AC and DC Motor Drives Robotics and Servo Controls 95 mΩ DS99412F(5/09) IXFR64N50P Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 30 VDS = 20V, ID = 32A, Note 1 Ciss Coss 50 S 9700 nF VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 32A RG = 2Ω (External) Qg(on) Qgs ISOPLUS247 (IXFR) Outline VGS = 10V, VDS = 0.5 • VDSS, ID = 32A Qgd 970 pF 30 pF 30 ns 25 ns 85 ns 22 ns 150 nC 50 nC 50 nC 0.42 °C/W RthJC RthCS 0.15 °C/W Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max. 64 A Repetitive, Pulse Width Limited by TJM 250 A VSD IF = 64A, VGS = 0V, Note 1 1.5 V trr QRM IRM IF = 25A, -di/dt = 100A/μs 0.6 6.0 VR = 100V, VGS = 0V 200 ns μC A Note 1: Pulse Test, t ≤ 300μs; Duty Cycle, d ≤ 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFR64N50P Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 160 70 VGS = 10V 8V 60 VGS = 10V 8V 140 7V 120 ID - Amperes ID - Amperes 50 6V 40 30 100 7V 80 60 6V 20 40 5V 10 20 5V 0 0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 0 7.0 5 10 20 25 30 Fig. 4. RDS(on) Normalized to ID = 32A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 125ºC 3.2 70 VGS = 10V 8V 7V 3.0 VGS = 10V 2.8 2.6 RDS(on) - Normalized 60 50 ID - Amperes 15 VDS - Volts VDS - Volts 6V 40 30 20 2.4 I D = 64A 2.2 2.0 I D = 32A 1.8 1.6 1.4 1.2 5V 1.0 10 0.8 0.6 0 0.4 0 2 4 6 8 10 12 14 -50 16 -25 0 Fig. 5. RDS(on) Normalized to ID = 32A Value vs. Drain Current 50 75 100 125 150 Fig. 6. Maximum Drain Current vs. Case Temperature 3.4 40 3.2 VGS = 10V 35 TJ = 125ºC 3.0 2.8 30 2.6 ID - Amperes RDS(on) - Normalized 25 TJ - Degrees Centigrade VDS - Volts 2.4 2.2 2.0 1.8 25 20 15 1.6 10 1.4 TJ = 25ºC 1.2 5 1.0 0.8 0 0 20 40 60 80 100 ID - Amperes © 2009 IXYS CORPORATION, All Rights Reserved 120 140 160 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXFR64N50P Fig. 8. Transconductance 90 80 80 70 70 g f s - Siemens ID - Amperes Fig. 7. Input Admittance 90 60 50 TJ = 125ºC 25ºC - 40ºC 40 TJ = - 40ºC 25ºC 60 50 125ºC 40 30 30 20 20 10 10 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0 6.5 20 40 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 80 100 120 140 Fig. 10. Gate Charge 240 10 220 9 200 VDS = 250V I D = 32A 8 I G = 10mA 180 7 160 VGS - Volts IS - Amperes 60 ID - Amperes 140 120 100 80 5 4 3 TJ = 125ºC 60 6 2 40 TJ = 25ºC 20 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 0 20 40 VSD - Volts 60 80 100 120 140 160 QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 100,000 1.000 Ciss 10,000 Z(th)JC - ºC / W Capacitance - PicoFarads f = 1 MHz 1,000 0.100 Coss 100 Crss 10 0 5 10 15 20 25 30 35 40 VDS - Volts 0.010 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: F_64N50P(9J)04-27-09