Preliminary Technical Information IXTP20N65XM X-Class Power MOSFET VDSS ID25 RDS(on) = 650V = 9A 210m N-Channel Enhancement Mode OVERMOLDED Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 650 V VDGR TJ = 25C to 150C, RGS = 1M 650 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 9 A IDM TC = 25C, Pulse Width Limited by TJM 40 A dv/dt IS ID25, VDD VDSS, TJ 150°C 30 V/ns PD TC = 25C 63 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C 300 260 °C °C 1.13 / 10 Nm/lb.in 2.5 g TJ TL TSOLD Maximum Lead Temperature for Soldering Plastic Body for 10s Md Mounting Torque Weight G DS G = Gate S = Source D = Drain Features International Standard Package Low RDS(ON) and QG Low Package Inductance Advantages Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 650 VGS(th) VDS = VGS, ID = 250μA 3.0 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 10A, Note 1 5.5 Applications V V 100 nA TJ = 125C © 2015 IXYS CORPORATION, All Rights Reserved High Power Density Easy to Mount Space Savings 5 A 50 A Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls 210 m DS100588D(6/15) IXTP20N65XM Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 10V, ID = 10A, Note 1 RGi Gate Input Resistance Characteristic Values Min. Typ. Max 9 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz OVERMOLDED TO-220 (IXTP...M) 15 S 3.4 1390 pF 1060 pF 22 pF 77 232 pF pF Crss 1 2 3 Effective Output Capacitance Co(er) Co(tr) Energy related td(on) Resistive Switching Times 18 ns tr VGS = 10V, VDS = 0.5 • VDSS, ID = 10A 30 ns 46 ns 22 ns 35 nC 7 nC 18 nC td(off) tf Time related VGS = 0V VDS = 0.8 • VDSS RG = 5 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 10A Qgd Terminals: 1 - Gate 2 - Drain 3 - Source 2.0 C/W RthJC Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max IS VGS = 0V, Note1 20 A ISM Repetitive, pulse Width Limited by TJM 80 A VSD IF = IS, VGS = 0V, Note 1 1.4 V trr QRM IRM IF = 10A, -di/dt = 100A/μs 350 4.45 25 VR = 100V ns C A Note 1. Pulse test, t 300s, duty cycle, d 2%. PRELIMANARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXTP20N65XM Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC 20 45 VGS = 10V 8V 18 16 35 14 30 I D - Amperes I D - Amperes VGS = 10V 9V 40 12 7V 10 8 8V 25 20 15 6 7V 10 4 6V 2 5 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 6V 0 4.5 5 10 15 VDS - Volts 30 3.8 20 VGS = 10V 8V 18 VGS = 10V 3.4 16 RDS(on) - Normalized 3.0 14 I D - Amperes 25 Fig. 4. RDS(on) Normalized to ID = 10A Value vs. Junction Temperature Fig. 3. Output Characteristics @ TJ = 125ºC 7V 12 10 8 6V 6 2.6 I D = 20A 2.2 I D = 10A 1.8 1.4 1.0 4 0.6 2 5V 0.2 0 0 1 2 3 4 5 6 7 8 9 10 11 -50 12 -25 0 25 50 75 100 125 150 TJ - Degrees Centigrade VDS - Volts Fig. 5. RDS(on) Normalized to ID = 10A Value vs. Drain Current Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 1.3 4.0 VGS = 10V 1.2 BV DSS / V GS(th) - Normalized 3.5 TJ = 125ºC R DS(on) - Normalized 20 VDS - Volts 3.0 2.5 2.0 TJ = 25ºC 1.5 1.0 BVDSS 1.1 1.0 0.9 0.8 VGS(th) 0.7 0.5 0.6 0 5 10 15 20 25 30 I D - Amperes © 2015 IXYS CORPORATION, All Rights Reserved 35 40 45 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 IXTP20N65XM Fig. 7. Maximum Drain Current vs. Case Temperature Fig. 8. Input Admittance 10 30 9 25 8 20 I D - Amperes I D - Amperes 7 6 5 4 15 TJ = 125ºC 25ºC - 40ºC 10 3 2 5 1 0 0 -50 -25 0 25 50 75 100 125 3.0 150 3.5 4.0 4.5 5.0 TC - Degrees Centigrade 5.5 6.0 6.5 7.0 7.5 8.0 8.5 VGS - Volts Fig. 9. Transconductance Fig. 10. Forward Voltage Drop of Intrinsic Diode 24 60 TJ = - 40ºC 50 25ºC 16 40 I S - Amperes g f s - Siemens 20 125ºC 12 8 30 TJ = 125ºC 20 TJ = 25ºC 4 10 0 0 0 5 10 15 20 25 30 0.4 0.5 0.6 0.7 I D - Amperes 0.8 0.9 1.0 1.1 VSD - Volts Fig. 12. Capacitance Fig. 11. Gate Charge 10 10,000 VDS = 325V V GS - Volts 8 Capacitance - PicoFarads I D = 10A I G = 10mA 6 4 C iss 1,000 Coss 100 2 f = 1 MHz Crss 10 0 0 5 10 15 20 25 30 35 QG - NanoCoulombs IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1000 IXTP20N65XM Fig. 13. Output Capacitance Stored Energy Fig. 14. Forward-Bias Safe Operating Area 16 100 RDS(on) Limit 14 25µs 10 10 I D - Amperes EOSS - MicroJoules 12 8 6 4 100µs 1 1ms 0.1 10ms TJ = 150ºC 100ms TC = 25ºC Single Pulse 2 0.01 0 0 100 200 300 400 500 600 10 100 1,000 VDS - Volts VDS - Volts Fig. 15. Maximum Transient Thermal Impedance 10 Z(th)JC - ºC / W 1 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width - Seconds © 2015 IXYS CORPORATION, All Rights Reserved IXYS REF: T_20N65X(J4) 6-17-15-A