Advance Technical Information IXFN80N50Q3 HiperFETTM Power MOSFET Q3-Class VDSS ID25 RDS(on) trr = = ≤ ≤ 500V 63A Ω 65mΩ 250ns N-Channel Enhancement Mode Fast Intrinsic Rectifier miniBLOC E153432 S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 500 V VGSS Continuous ±30 V VGSM Transient ±40 V ID25 TC = 25°C IDM TC = 25°C, Pulse Width Limited by TJM IA 63 A 240 A TC = 25°C 80 A EAS TC = 25°C 5 J dv/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 50 V/ns PD TC = 25°C 780 W -55 ... +150 150 -55 ... +150 °C °C °C 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in. Nm/lb.in. 30 g TJ TJM Tstg VISOL 50/60 Hz, RMS, t = 1minute IISOL ≤ 1mA, t = 1s Md Mounting Torque for Base Plate Terminal Connection Torque Weight G S D G = Gate S = Source D = Drain Either Source Terminal S can be used as the Source Terminal or the Kelvin Source (Gate Return) Terminal. Features z z z z z z International Standard Package Low Intrinsic Gate Resistance miniBLOC with Aluminum Nitride Isolation Low Package Inductance Fast Intrinsic Rectifier Low RDS(on) and QG Advantages z z z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 500 VGS(th) VDS = VGS, ID = 8mA 3.5 IGSS VGS = ±30V, VDS = 0V ±200 nA IDSS VDS = VDSS, VGS = 0V 50 μA 2 mA RDS(on) VGS = 10V, ID = 40A, Note 1 TJ = 125°C © 2011 IXYS CORPORATION, All Rights Reserved Applications V 6.5 High Power Density Easy to Mount Space Savings V z z z z z DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies DC Choppers Temperature and Lighting Controls 65 mΩ DS100303(03/11) IXFN80N50Q3 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 20V, ID = 40A, Note 1 35 55 S 10 nF 1260 pF 115 pF 0.15 Ω 30 ns 20 ns 43 ns 15 ns 200 nC Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss RGi Gate Input Resistance td(on) Resistive Switching Times tr td(off) tf VGS = 10V, VDS = 0.5 • VDSS, ID = 40A RG = 1Ω (External) Qg(on) Qgs SOT-227B (IXFN) Outline VGS = 10V, VDS = 0.5 • VDSS, ID = 40A Qgd 77 nC 90 nC (M4 screws (4x) supplied) 0.16 °C/W RthJC RthCS 0.05 °C/W Source-Drain Diode Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) IS VGS = 0V ISM VSD trr QRM IRM Note Characteristic Values Min. Typ. Max. 80 A Repetitive, Pulse Width Limited by TJM 320 A IF = IS, VGS = 0V, Note 1 1.4 V IF = 40A, -di/dt = 100A/μs 1.8 15.6 VR = 100V, VGS = 0V 250 ns μC A 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFN80N50Q3 Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 80 180 VGS = 10V VGS = 10V 160 70 140 9V 120 50 ID - Amperes ID - Amperes 60 40 30 8V 9V 100 80 60 20 40 10 8V 20 7V 7V 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 5 10 15 25 30 Fig. 4. RDS(on) Normalized to ID = 40A Value vs. Junction Temperature Fig. 3. Output Characteristics @ T J = 125ºC 80 3.4 VGS = 10V 9V 70 R DS(on) - Normalized 50 8V 40 30 20 VGS = 10V 3.0 60 ID - Amperes 20 VDS - Volts VDS - Volts 2.6 I D = 80A 2.2 I D = 40A 1.8 1.4 1.0 7V 10 0.6 6V 0 0.2 0 2 4 6 8 10 12 -50 -25 0 VDS - Volts Fig. 5. RDS(on) Normalized to ID = 40A Value vs. Drain Current 50 75 100 125 150 125 150 Fig. 6. Maximum Drain Current vs. Case Temperature 3.0 70 VGS = 10V 2.8 TJ = 125ºC 60 2.6 2.4 50 2.2 ID - Amperes R DS(on) - Normalized 25 TJ - Degrees Centigrade 2.0 1.8 1.6 40 30 20 1.4 TJ = 25ºC 1.2 10 1.0 0.8 0 0 20 40 60 80 100 120 ID - Amperes © 2011 IXYS CORPORATION, All Rights Reserved 140 160 180 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFN80N50Q3 Fig. 7. Input Admittance Fig. 8. Transconductance 120 100 TJ = - 40ºC 100 80 25ºC g f s - Siemens ID - Amperes 80 TJ = 125ºC 25ºC - 40ºC 60 60 125ºC 40 40 20 20 0 0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 0 20 40 VGS - Volts 60 80 100 120 ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 240 16 VDS = 250V 14 I D = 40A 200 I G = 10mA 12 VGS - Volts IS - Amperes 160 120 10 8 6 80 TJ = 125ºC 4 TJ = 25ºC 40 2 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 0 40 VSD - Volts 120 160 200 240 280 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 1000 100,000 f = 1 MHz RDS(on) Limit Ciss 100 10,000 ID - Amperes Capacitance - PicoFarads 80 1,000 Coss 100µs 10 1 100 TJ = 150ºC Crss TC = 25ºC Single Pulse 10 1ms 0.1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 VDS - Volts 1,000 IXFN80N50Q3 Fig. 13. Maximum Transient Thermal Impedance 1 Fig. 13. Maximum Transient Thermal Impedance aaaaa 0.3 Z(th)JC - ºC / W 0.1 0.01 0.001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2011 IXYS CORPORATION, All Rights Reserved IXYS REF: F_80N50Q3(Q8)03-02-11-A