IXYP20N65B3D1 - IXYS Corporation

Advance Technical Information
IXYP20N65B3D1
XPTTM 650V IGBT
GenX3TM w/Diode
VCES =
IC110 =
VCE(sat) 
tfi(typ) =
Extreme Light Punch Through
IGBT for 5-30kHz Switching
650V
20A
2.10V
87ns
TO-220
Symbol
Test Conditions
Maximum Ratings
VCES
VCGR
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGE = 1M
650
650
V
V
VGES
VGEM
Continuous
Transient
±20
±30
V
V
G = Gate
E = Emitter
IC25
IC110
IF110
ICM
TC
TC
TC
TC
58
20
23
108
A
A
A
A
Features
IA
EAS
TC = 25°C
TC = 25°C
10
200
A
mJ

SSOA
(RBSOA)
VGE = 15V, TVJ = 150°C, RG = 20
Clamped Inductive Load
ICM = 40
@VCE  VCES
A

tsc
(SCSOA)
VGE = 15V, VCE = 360V, TJ = 150°C
RG = 82, Non Repetitive
5
μs
PC
TC = 25°C
230
W
-55 ... +175
175
-55 ... +175
°C
°C
°C
300
260
°C
°C
1.13/10
Nm/lb.in.
3.0
g
= 25°C
= 110°C
= 110°C
= 25°C, 1ms
TJ
TJM
Tstg
TL
TSOLD
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Md
Mounting Torque
Weight
G







BVCES
IC
= 250A, VGE = 0V
650

VGE(th)
IC
= 250A, VCE = VGE
3.5
ICES
VCE = VCES, VGE = 0V
VCE = 0V, VGE = 20V
VCE(sat)
IC
= 20A, VGE = 15V, Note 1
TJ = 150C
© 2015 IXYS CORPORATION, All Rights Reserved

6.0
V
10
400
A
A
100
nA
TJ = 150C
IGES

V
1.77
2.05
2.10
C = Collector
Tab = Collector
Optimized for 5-30kHz Switching
Square RBSOA
Avalanche Rated
Anti-Parallel Fast Diode
Short Circuit Capability
International Standard Package
High Power Density
Extremely Rugged
Low Gate Drive Requirement
Applications

Characteristic Values
Min.
Typ.
Max.
Tab
Advantages

Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
CE



Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
V
V
DS100645(02/15)
IXYP20N65B3D1
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
gfs
8.5
IC = 20A, VCE = 10V, Note 1
Cies
Coes
Cres
VCE = 25V, VGE = 0V, f = 1MHz
Qg(on)
Qge
Qgc
IC = 20A, VGE = 15V, VCE = 0.5 • VCES
td(on)
tri
Eon
td(off)
tfi
Eoff
td(on)
tri
Eon
td(off)
tfi
Eoff
Inductive load, TJ = 25°C
IC = 20A, VGE = 15V
VCE = 400V, RG = 20
Note 2
Inductive load, TJ = 150°C
IC = 20A, VGE = 15V
VCE = 400V, RG = 20
Note 2
RthJC
RthCS
TO-220 Outline
14
S
826
82
19
pF
pF
pF
29
6
14
nC
nC
nC
12
25
0.50
103
87
0.45
ns
ns
mJ
ns
ns
mJ
0.70
13
26
0.93
124
147
0.76
ns
ns
mJ
ns
ns
mJ
0.50
0.65 °C/W
°C/W
Pins:
1 - Gate
3 - Emitter
2 - Collector
Reverse Diode (FRED)
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
VF
IF = 20A, VGE = 0V, Note 1
TJ = 150C
1.2
V
V
IRM
IF = 20A, VGE = 0V,
-diF/dt = 300A/μs, VR = 400V, TJ = 150°C
11
A
134
ns
trr
2.5
RthJC
Notes:
1.85 °C/W
1. Pulse test, t  300μs, duty cycle, d  2%.
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXYP20N65B3D1
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
Fig. 1. Output Characteristics @ TJ = 25ºC
40
VGE = 15V
13V
12V
11V
35
100
14V
25
20
9V
15
5
13V
80
12V
60
11V
40
8V
10
10V
9V
20
7V
0
8V
7V
0
0
0.5
1
1.5
2
2.5
3
3.5
0
5
10
15
20
25
VCE - Volts
VCE - Volts
Fig. 3. Output Characteristics @ TJ = 150ºC
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
40
2.0
VGE = 15V
13V
12V
11V
30
30
VGE = 15V
1.8
10V
I C = 40A
V CE(sat) - Normalized
35
I C - Amperes
VGE = 15V
10V
I C - Amperes
I C - Amperes
30
120
25
9V
20
15
8V
10
7V
1.6
1.4
I C = 20A
1.2
1.0
0.8
5
I C = 10A
6V
0.6
0
0
0.5
1
1.5
2
2.5
3
3.5
-50
4
-25
0
25
VCE - Volts
Fig. 5. Collector-to-Emitter Voltage vs.
Gate-to-Emitter Voltage
6
50
75
100
125
150
TJ - Degrees Centigrade
Fig. 6. Input Admittance
45
40
TJ = 25ºC
5
35
I C - Amperes
VCE - Volts
30
4
I C = 40A
3
25
20
TJ = 150ºC
25ºC
- 40ºC
15
20A
10
2
5
10A
0
1
7
8
9
10
11
12
VGE - Volts
© 2015 IXYS CORPORATION, All Rights Reserved
13
14
15
4
5
6
7
VGE - Volts
8
9
10
175
IXYP20N65B3D1
Fig. 7. Transconductance
Fig. 8. Gate Charge
24
16
TJ = - 40ºC
VCE = 10V
I C = 20A
I G = 10mA
12
25ºC
16
V GE - Volts
g f s - Siemens
VCE = 325V
14
20
150ºC
12
10
8
6
8
4
4
2
0
0
0
5
10
15
20
25
30
35
40
45
50
0
55
5
10
15
20
25
I C - Amperes
QG - NanoCoulombs
Fig. 9. Capacitance
Fig. 10. Reverse-Bias Safe Operating Area
30
10,000
40
Cies
1,000
30
I C - Amperes
Capacitance - PicoFarads
f = 1 MHz
Coes
20
100
10
TJ = 150ºC
RG = 20Ω
dv / dt < 10V / ns
Cres
0
10
0
5
10
15
20
25
30
35
100
40
200
300
500
600
700
Fig. 12. Maximum Transient Thermal Impedance (IGBT)
Fig. 11. Forward-Bias Safe Operating Area
1
1000
VCE(sat) Limit
D = 0.5
25µs
10
100µs
1
Z(th)JC - ºC / W
100
I D - Amperes
400
VCE - Volts
VCE - Volts
D = 0.2
0.1
D = 0.1
tp
D = 0.02
D = 0.01
TJ = 175ºC
1ms
TC = 25ºC
Single Pulse
DC
0.1
1
D = tp / T
D = 0.05
10
100
T
Single Pulse
10ms
1000
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
0.01
1.E-06
1.E-05
1.E-04
1.E-03
1.E-02
Pulse Width - Second
1.E-01
1.E+00
IXYP20N65B3D1
Fig. 13. Inductive Switching Energy Loss vs.
Gate Resistance
2.0
Eoff
---
1.6
4.5
1.4
4.0
VCE = 400V
1.4
3.0
I C = 40A
1.2
2.5
1.0
2.0
0.8
1.5
0.4
40
50
60
70
80
90
2.0
0.8
1.6
0.6
1.2
0.4
0.2
0.5
100
0.0
Eoff
Eon
0.4
0.0
10
----
3.2
200
2.8
180
RG = 20Ω , VGE = 15V
VCE = 400V
2.4
15
20
25
0.6
1.2
I C = 20A
t f i - Nanoseconds
1.6
0.8
0.2
0.4
0.0
25
50
75
100
125
tfi
td(off) - - - -
VCE = 400V
300
140
240
I C = 20A
120
180
I C = 40A
100
120
80
60
20
30
40
50
tfi
210
180
180
160
0
100
80
90
TJ = 25ºC
40
0
I C - Amperes
© 2015 IXYS CORPORATION, All Rights Reserved
35
40
t f i - Nanoseconds
120
30
140
td(off) - - - 130
140
I C = 20A
120
120
110
100
100
I C = 40A
60
80
30
60
90
25
50
75
100
TJ - Degrees Centigrade
125
80
150
t d(off) - Nanoseconds
TJ = 150ºC
120
t d(off) - Nanoseconds
t f i - Nanoseconds
90
VCE = 400V
150
25
80
RG = 20Ω , VGE = 15V
VCE = 400V
20
70
Fig. 18. Inductive Turn-off Switching Times vs.
Junction Temperature
tfi
td(off) - - - -
160
15
60
RG - Ohms
RG = 20Ω , VGE = 15V
10
420
360
60
0.0
150
Fig. 17. Inductive Turn-off Switching Times vs.
Collector Current
200
40
TJ = 150ºC, VGE = 15V
TJ - Degrees Centigrade
240
35
t d(off) - Nanoseconds
0.8
- MilliJoules
2.0
on
1.0
0.4
30
Fig. 16. Inductive Turn-off Switching Times vs.
Gate Resistance
160
I C = 40A
E
Eoff - MilliJoules
1.2
0.8
TJ = 25ºC
I C - Amperes
Fig. 15. Inductive Switching Energy Loss vs.
Junction Temperature
1.4
2.4
TJ = 150ºC
RG - Ohms
1.6
2.8
1.0
1.0
I C = 20A
30
----
Eon - MilliJoules
3.5
20
Eon
VCE = 400V
1.2
E on - MilliJoules
1.6
0.6
Eoff
3.2
RG = 20Ω , VGE = 15V
TJ = 150ºC , VGE = 15V
1.8
Eoff - MilliJoules
Eon -
5.0
Eoff - MilliJoules
2.2
Fig. 14. Inductive Switching Energy Loss vs.
Collector Current
IXYP20N65B3D1
Fig. 19. Inductive Turn-on Switching Times vs.
Gate Resistance
160
tri
I C = 40A
t r i - Nanoseconds
100
50
I C = 20A
40
60
30
40
20
20
10
0
30
40
50
60
70
80
90
0
100
tri
15
40
14
TJ = 150ºC
30
13
TJ = 25ºC
20
12
10
11
0
10
10
15
20
25
30
35
40
I C - Amperes
Fig. 21. Inductive Turn-on Switching Times vs.
Junction Temperature
80
16
VCE = 400V
50
RG - Ohms
90
td(on) - - - -
t d(on) - Nanoseconds
60
17
RG = 20Ω , VGE = 15V
t d(on) - Nanoseconds
VCE = 400V
80
tri
60
70
120
20
70
80
td(on) - - - -
TJ = 150ºC, VGE = 15V
140
90
t r i - Nanoseconds
180
Fig. 20. Inductive Turn-on Switching Times vs.
Collector Current
td(on) - - - -
18
17
RG = 20Ω , VGE = 15V
16
VCE = 400V
60
15
I C = 40A
50
14
40
13
30
12
I C = 20A
20
11
10
25
50
75
100
t d(on) - Nanoseconds
t r i - Nanoseconds
70
125
10
150
TJ - Degrees Centigrade
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: IXY_20N65B3D1(3D-Y42) 02-05-2015
IXYP20N65B3D1
Fig. 23. Reverse Recovery Charge vs. -diF/dt
Fig. 22. Diode Forward Characteristics
1.6
40
TJ = 150ºC
35
1.4
IF = 30A
VR = 400V
30
1.2
20
QRR (µC)
I F (A)
25
TJ = 150ºC
TJ = 25ºC
15
20A
1.0
0.8
10
10A
0.6
5
0
0.4
0
0.5
1
1.5
2
2.5
200
300
400
500
600
700
800
900
1000
1100
1200
-diF/ dt (A/µs)
VF (V)
Fig. 24 Reverse Recovery Current vs. -diF/dt
Fig. 25. Reverse Recovery Time vs. -diF/dt
26
180
TJ = 150ºC
24
TJ = 150ºC
VR = 400V
22
20A
IF = 40A
160
10A
20
VR = 400V
140
tRR (ns)
I RR (A)
IF = 40A
18
16
14
120
20A
100
12
80
10A
10
8
200
60
300
400
500
600
700
800
900 1000 1100 1200 1300 1400
200
300
400
500
diF/dt (A/µs)
600
700
800
900
1000
1100
1200
-diF/dt (A/µs)
Fig. 13. Maximum Transient Thermal Impedance
10
Fig. 26. Dynamic Parameters QRR, IRR vs.
Junction Temperature
1.1
1.0
VR = 400V
0.9
IF = 20A
-diF /dt = 300A/µs
Fig. 27. Maximum Transient Thermal Impedance (Diode)
AAAAA
4
1
D = 0.5
Z (th)JC - ºC / W
0.8
KF
0.7
0.6
KF IRR
0.5
0.4
D = 0.2
D = 0.1
D = 0.05
0.1
D = tp / T
D = 0.02
D = 0.01
Single Pulse
tp
T
0.3
KF QRR
0.2
0.1
0
20
40
60
80
100
TJ (ºC)
© 2015 IXYS CORPORATION, All Rights Reserved
120
140
160
0.01
1.E-06
1.E-05
1.E-04
1.E-03
1.E-02
Pulse Width - Second
1.E-01
1.E+00