Advance Technical Information IXGK72N60A3H1 IXGX72N60A3H1 GenX3TM 600V IGBT w/Diode VCES IC110 VCE(sat) tfi(typ) Ultra-Low Vsat PT IGBTs for up to 5kHz Switching = = ≤£ = 600V 72A 1.35V 250ns TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C (Limited by Leads) 75 A IC110 TC = 110°C 72 A IF110 TC = 110°C ICM TC = 25°C, 1ms SSOA VGE = 15V, TVJ = 125°C, RG = 3Ω (RBSOA) Clamped Inductive Load PC TC = 25°C 68 A 400 A ICM = 150 A @ VCE ≤ 600 V 540 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 1.13 / 10 20..120 / 4.5..27 Nm/lb.in. N/lb. TJ Md FC Mounting Torque (TO-264) Mounting Force (PLUS247) TL Maximum Lead Temperature for Soldering 300 °C TSOLD 1.6mm (0.062 in.) from Case for 10s 260 °C Weight TO-264 PLUS247 10 6 g g G G G VGE(th) IC = 250μA, VCE = VGE ICES VCE = VCES, VGE = 0V IGES VCE = 0V, VGE = ±20V VCE(sat) IC = 60A, VGE = 15V, Note 1 3.0 TJ = 125°C 5.0 (TAB) ES C = Collector TAB = Collector Features z z z z Optimized for Low Conduction Losses Square RBSOA Anti-Parallel Ultra Fast Diode International Standard Packages Advantages High Power Density Low Gate Drive Requirement Applications V 300 5 μA mA ±100 nA 1.35 V z z z z z z z z z © 2009 IXYS CORPORATION, All Rights Reserved CD G = Gate E = Emitter z Characteristic Values Min. Typ. Max. E PLUS247 (IXGX) z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) (TAB) C Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts Inrush Current Protection Circuits DS100144(04/09) IXGK72N60A3H1 IXGX72N60A3H1 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. IC = 60A, VCE = 10V, Note 1 48 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg Qge Qgc IC = 60A, VGE = 15V, VCE = 0.5 • VCES td(on) tri Eon td(off) Inductive load, TJ = 25°°C IC = 50A, VGE = 15V TO-264 (IXGK) Outline 75 S 6600 360 80 pF pF pF 230 40 80 nC nC nC 31 ns 34 1.4 ns mJ 320 ns 250 ns Eoff 3.5 mJ td(on) tri Eon td(off) tfi Eoff 29 34 2.6 510 375 6.5 ns ns mJ ns ns mJ 0.15 0.23 °C/W °C/W tfi VCE = 480V, RG = 3Ω Inductive load, TJ = 125°°C IC = 50A, VGE = 15V VCE = 480V, RG = 3Ω RthJC RthCS Reverse Diode (FRED) DIM INCHES MIN A A1 b b1 b2 c D E e J K L L1 ØP Q Q1 ØR ØR1 S 0.185 0.102 0.037 0.087 0.110 0.017 1.007 0.760 .215 BSC 0.000 0.000 0.779 0.087 0.122 0.240 0.330 0.155 0.085 0.243 0.209 0.118 0.055 0.102 0.126 0.029 1.047 0.799 0.010 0.010 0.842 0.102 0.138 0.256 0.346 0.187 0.093 0.253 MILLIMETERS MIN MAX 4.70 2.59 0.94 2.21 2.79 0.43 25.58 19.30 5.46 BSC 0.00 0.00 19.79 2.21 3.10 6.10 8.38 3.94 2.16 6.17 5.31 3.00 1.40 2.59 3.20 0.74 26.59 20.29 0.25 0.25 21.39 2.59 3.51 6.50 8.79 4.75 2.36 6.43 PLUS247TM (IXGX) Outline (TJ = 25°C, Unless Otherwise Specified) Symbol Test Conditions Characteristic Values Min. Typ. Max. VF IF = 60A, VGE = 0V, Note 1 IRM IF = 60A, VGE = 0V, trr IF = 60A, -di/dt = 200A/μs, VR = 300V TJ = 150°C 1.6 1.4 TJ = 100°C 8.3 A 140 ns RthJC 2.0 1.8 V V 0.3 °C/W Terminals: 1 - Gate 3 - Source (Emitter) 2 - Drain (Collector) 4 - Drain (Collector) Dim. Note 1: Pulse Test, t ≤ 300μs, Duty Cycle, d ≤ 2%. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 MAX 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 A A1 A2 b b1 b2 C D E e L L1 Q R Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXGK72N60A3H1 IXGX72N60A3H1 Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 120 100 VGE = 15V 13V 11V 300 270 240 9V 80 60 IC - Amperes IC - Amperes 330 VGE = 15V 13V 11V 7V 40 210 9V 180 150 120 90 7V 60 20 30 0 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 1 2 Fig. 3. Output Characteristics @ 125ºC 5 6 7 8 125 150 7.5 8.0 1.4 VGE = 15V 13V 11V 9V 80 60 7V 40 20 VGE = 15V 1.3 VCE(sat) - Normalized 100 IC - Amperes 4 Fig. 4. Dependence of VCE(sat) on Junction Temperature 120 1.2 I C = 120A I C = 60A I C = 30A 1.1 1.0 0.9 0.8 5V 0.7 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 -50 1.8 -25 0 VCE - Volts 25 50 75 100 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 200 3.2 3.0 180 TJ = 25ºC 2.8 160 I 2.4 C 2.2 140 = 120A 60A 30A IC - Amperes 2.6 VCE - Volts 3 VCE - Volts VCE - Volts 2.0 1.8 1.6 TJ = 125ºC 25ºC - 40ºC 120 100 80 60 1.4 40 1.2 20 1.0 0.8 0 5 6 7 8 9 10 11 VGE - Volts © 2009 IXYS CORPORATION, All Rights Reserved 12 13 14 15 4.0 4.5 5.0 5.5 6.0 VGE - Volts 6.5 7.0 IXGK72N60A3H1 IXGX72N60A3H1 Fig. 7. Transconductance Fig. 8. Gate Charge 130 16 TJ = - 40ºC 120 100 VGE - Volts 80 125ºC 70 I C = 60A I G = 10 mA 12 25ºC 90 g f s - Siemens VCE = 300V 14 110 60 50 10 8 6 40 4 30 20 2 10 0 0 0 20 40 60 80 100 120 140 160 180 200 0 20 40 60 80 IC - Amperes 100 120 140 160 180 200 220 240 QG - NanoCoulombs Fig. 10. Reverse-Bias Safe Operating Area Fig. 9. Capacitance 160 100,000 f = 1 MHz 10,000 120 IC - Amperes Capacitance - PicoFarads 140 Cies 1,000 Coes 100 Cres 10 0 5 10 15 20 25 30 35 40 100 80 60 40 TJ = 125ºC 20 RG = 3Ω dV / dt < 10V / ns 0 100 150 200 250 300 350 400 450 500 550 600 650 VCE - Volts VCE - Volts Fig. 11. Maximum Transient Thermal Impedance Z(th)JC - ºC / W 1.00 0.10 0.01 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test conditions, and Dimensions. IXYS REF: G_72N60A3(76)4-23-09-C IXGK72N60A3H1 IXGX72N60A3H1 Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance Fig. 13. Inductive Switching Energy Loss vs. Collector Current 9 16 I = 100A VCE = 480V 5 4 I C = 50A 12 4.50 10 3.75 8 3.00 TJ = 25ºC 6 3 4 2 4 1.50 1 2 0.75 0 0 2 I C = 25A 0 0 5 10 15 20 25 30 35 6 20 30 40 50 RG - Ohms 18 C = 100A 8 3 I C = 50A 6 2 4 2 2 0 65 75 85 95 105 115 1100 378 I 900 I 372 C = 50A 800 369 700 I 500 360 400 0 5 10 15 380 540 530 360 VCE = 480V 410 280 370 260 330 TJ = 25ºC 220 60 70 80 IC - Amperes © 2009 IXYS CORPORATION, All Rights Reserved 90 t f - Nanoseconds 570 450 RG = 3Ω , VGE = 15V 50 35 580 490 td(off) - - - - 40 30 400 t d(off) - Nanoseconds 340 30 25 I C 500 = 25A, 50A, 100A 340 460 320 420 300 380 280 340 tf 260 290 240 250 100 220 td(off) - - - - RG = 3Ω , VGE = 15V VCE = 480V 25 35 45 55 65 75 85 95 TJ - Degrees Centigrade 105 115 300 260 220 125 t d(off) - Nanoseconds TJ = 125ºC 20 20 Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature 380 240 600 = 25A RG - Ohms 610 300 C 363 0 125 400 320 1000 = 100A C 375 Fig. 16. Inductive Turn-off Switching Times vs. Collector Current tf 1200 VCE = 480V TJ - Degrees Centigrade 360 1300 381 366 1 I C = 25A 55 - MilliJoules 4 on 10 5 td(off) - - - - TJ = 125ºC, VGE = 15V 384 E I 45 0.00 100 1400 tf 387 5 12 35 90 t d(off) - Nanoseconds VCE = 480V 25 80 390 6 RG = 3Ω , VGE = 15V 14 Eoff - MilliJoules ---- t f - Nanoseconds 16 Eon 70 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 7 Eoff 60 2.25 IC - Amperes Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature t f - Nanoseconds 5.25 TJ = 125ºC - MilliJoules 6 --- VCE = 480V 8 14 6.00 RG = 3Ω , VGE = 15V on Eon - 7 ---- Eon E 10 TJ = 125ºC , VGE = 15V 16 - MilliJoules Eoff 8 on 12 6.75 Eoff E Eoff - MilliJoules 14 C 18 Eoff - MilliJoules 18 IXGK72N60A3H1 IXGX72N60A3H1 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance 120 110 TJ = 125ºC , VGE = 15V 100 I 80 C 90 = 100A 80 70 60 I 50 C 60 = 50A I C = 25A 50 40 40 30 30 20 20 10 - Nanoseconds 70 5 10 15 20 25 30 td(on) - - - - 80 70 VCE = 480V TJ = 25ºC 34 RG = 3Ω , VGE = 15V 33 60 TJ = 125ºC 31 40 30 30 29 20 28 10 27 20 35 32 50 0 10 0 35 tr 30 40 50 60 70 80 90 t d(on) - Nanoseconds VCE = 480V d(on) 90 td(on) - - - - t t r - Nanoseconds 100 90 120 tr t r - Nanoseconds 110 26 100 IC - Amperes RG - Ohms Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 100 35 90 34 33 I C = 100A 70 tr 60 RG = 3Ω , VGE = 15V td(on) - - - - 32 31 VCE = 480V 50 30 40 29 I C = 50A 30 t d(on) - Nanoseconds t r - Nanoseconds 80 28 I 20 C = 25A 27 10 25 35 45 55 65 75 85 95 105 115 26 125 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test conditions, and Dimensions. IXYS REF: G_72N60A3(76)4-23-09-C IXGK72N60A3H1 IXGX72N60A3H1 Fig. 21 Fig. 22 Fig. 24 Fig. 25 Fig. 23 Z(th)JC - [ ºC / W ] 1.00 0.10 0.01 0.0001 0.001 0.01 0.1 1 10 s] Pulse Width [[ms] Fig. 26 Maximum transient thermal impedance junction to case (for diode) © 2009 IXYS CORPORATION, All Rights Reserved IXYS REF: G_72N60A3(76)4-23-09-C