Preliminary Technical Information IXGK72N60B3H1 IXGX72N60B3H1 GenX3TM 600V IGBT with Diode VCES IC110 VCE(sat) tfi(typ) Medium speed low Vsat PT IGBTs 5-40 kHz switching = = ≤£ = 600V 72A 1.8V 92ns TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C (limited by leads) 75 A IC110 TC = 110°C ICM TC = 25°C, 1ms SSOA VGE = 15V, TVJ = 125°C, RG = 3Ω (RBSOA) Clamped inductive load @ VCE ≤ 600V PC TC = 25°C 72 A 450 A ICM = 240 A C W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 1.13 / 10 20..120 / 4.5..27 Nm/lb.in. N/lb. Md FC Mounting torque (TO-264) Mounting force (PLUS247) TL Maximum lead temperature for soldering 300 °C TSOLD 1.6mm (0.062 in.) from case for 10s 260 °C Weight TO-264 PLUS247 10 6 g g (TAB) E PLUS247 (IXGX) G G 540 TJ G CD TAB ES G = Gate E = Emitter C = Collector TAB = Collector Features z z z z Optimized for low conduction and switching losses Square RBSOA Anti-parallel ultra fast diode International standard packages Advantages Symbol Test Conditions VGE(th) IC = 250μA, VCE = VGE ICES VCE = VCES VGE = 0V Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. 3.0 TJ = 125°C IGES VCE = 0V, VGE = ±20V VCE(sat) IC = 60A, VGE = 15V, Note 1 IC = 120A 1.50 1.75 z z 5.0 V 300 5 μA mA z ±100 nA z 1.80 V Applications z z z z z z © 2008 IXYS CORPORATION, All rights reserved High power density Low gate drive requirement Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts DS99869A(06/08) IXGK72N60B3H1 IXGX72N60B3H1 Symbol Test Conditions (TJ = 25°C, unless otherwise specified) gfs Min. IC = 50A, VCE = 10V, Note 1 Characteristic Values Typ. Max. 45 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg Qge Qgc IC = 60A, VGE = 15V, VCE = 0.5 • VCES 76 S 6800 575 80 pF pF pF 225 40 82 nC nC nC 31 ns 33 1.4 ns mJ td(on) tri Eon Inductive load, TJ = 25°°C IC = 50A, VGE = 15V 152 240 ns 92 150 ns Eoff 1.0 2.0 mJ td(on) tri Eon td(off) tfi Eoff 29 34 2.7 228 142 2.2 ns ns mJ ns ns mJ 0.15 0.23 °C/W °C/W td(off) tfi VCE = 480V, RG = 3Ω Inductive load, TJ = 125°°C IC = 50A,VGE = 15V VCE = 480V,RG = 3Ω RthJC RthCS Reverse Diode (FRED) Symbol Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. Test Conditions VF IF = 60A, VGE = 0V, Note 1 IRM IF = 60A, VGE = 0V, -diF/dt = 200A/μs, VR = 300V trr TJ = 150°C 1.6 1.4 2.0 1.8 TJ = 100°C 8.3 A 140 ns DIM INCHES MIN A A1 b b1 b2 c D E e J K L L1 ØP Q Q1 ØR ØR1 S 0.185 0.102 0.037 0.087 0.110 0.017 1.007 0.760 .215 BSC 0.000 0.000 0.779 0.087 0.122 0.240 0.330 0.155 0.085 0.243 Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 0.209 0.118 0.055 0.102 0.126 0.029 1.047 0.799 0.010 0.010 0.842 0.102 0.138 0.256 0.346 0.187 0.093 0.253 MILLIMETERS MIN MAX 4.70 2.59 0.94 2.21 2.79 0.43 25.58 19.30 5.46 BSC 0.00 0.00 19.79 2.21 3.10 6.10 8.38 3.94 2.16 6.17 5.31 3.00 1.40 2.59 3.20 0.74 26.59 20.29 0.25 0.25 21.39 2.59 3.51 6.50 8.79 4.75 2.36 6.43 PLUS247TM (IXGX) Outline Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector) Dim. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 MAX V V 0.3 °C/W RthJC TO-264 (IXGK) Outline 6,404,065 B1 6,534,343 6,583,505 A A1 A2 b b1 b2 C D E e L L1 Q R Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXGK72N60B3H1 IXGX72N60B3H1 Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 120 330 VGE = 15V 13V 11V 100 270 9V 240 80 60 IC - Amperes IC - Amperes VGE = 15V 13V 11V 300 7V 40 210 9V 180 150 120 90 7V 60 20 30 0 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 0 2.4 1 2 VCE(sat) - Normalized IC - Amperes 6 7 8 125 150 7.5 8.0 VGE = 15V 1.2 80 60 7V 40 20 I C = 120A I C = 60A I C = 30A 1.1 1.0 0.9 0.8 5V 0.7 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 -50 2.4 -25 0 VCE - Volts 25 50 75 100 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 180 4.5 TJ = 25ºC 4.0 C 3.5 160 = 120A 60A 30A 140 IC - Amperes I VCE - Volts 5 1.3 VGE = 15V 13V 11V 9V 100 4 Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ 125ºC 120 3 VCE - Volts VCE - Volts 3.0 2.5 120 100 80 TJ = 125ºC 25ºC - 40ºC 60 2.0 40 1.5 20 1.0 0 5 6 7 8 9 10 11 VGE - Volts © 2008 IXYS CORPORATION, All rights reserved 12 13 14 15 4.0 4.5 5.0 5.5 6.0 VGE - Volts 6.5 7.0 IXGK72N60B3H1 IXGX72N60B3H1 Fig. 7. Transconductance Fig. 8. Gate Charge 130 16 120 TJ = - 40ºC 25ºC 125ºC 100 90 g f s - Siemens VCE = 300V 14 110 I C = 60A I G = 10mA 12 VGE - Volts 80 70 60 50 10 8 6 40 4 30 20 2 10 0 0 0 20 40 60 80 100 120 140 160 180 200 0 20 40 60 80 IC - Amperes Fig. 9. Capacitance 120 140 160 180 200 220 240 Fig. 10. Reverse-Bias Safe Operating Area 280 10,000 Cies 240 200 1,000 IC - Amperes Capacitance - PicoFarads 100 QG - NanoCoulombs Coes 100 160 120 80 Cres 40 f = 1 MHz 0 100 10 0 5 10 15 20 25 30 35 40 TJ = 125ºC RG = 3Ω dV / dt < 10V / ns 200 300 VCE - Volts 400 500 600 VCE - Volts Fig. 11. Maximum Transient Thermal Impedance Z(th)JC - ºC / W 1.00 0.10 0.01 0.00001 0.0001 0.001 0.01 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. 0.1 1 10 IXGK72N60B3H1 IXGX72N60B3H1 Fig. 13. Inductive Switching Energy Loss vs. Collector Current Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance 8 9 7 7 8 6 =100A 7 5 TJ = 125ºC , VGE = 15V I C = 50A VCE = 480V 3 2 4 1 5 10 15 20 25 30 35 40 45 50 TJ = 125ºC 4 4 3 3 TJ = 25ºC 20 55 30 40 50 7 ---I C = 50A VCE = 480V 2 3 - MilliJoules Eon t f - Nanoseconds on 4 2 1 35 45 55 65 75 85 95 105 115 C = 100A 180 850 160 I C 140 550 I C 0 5 10 15 t f - Nanoseconds 220 180 110 160 TJ = 25ºC 70 IC - Amperes © 2008 IXYS CORPORATION, All rights reserved 55 245 175 70 50 200 130 60 45 235 190 50 100 40 260 150 40 35 220 205 VCE = 480V 30 30 80 90 230 I C = 25A, 50A, 100A 160 215 140 200 120 185 100 145 80 130 100 60 tr td(off) - - - - RG = 3Ω , VGE = 15V 170 155 VCE = 480V 25 35 45 55 65 75 85 95 TJ - Degrees Centigrade 105 115 140 125 t d(off) - Nanoseconds RG = 3Ω , VGE = 15V 20 25 250 t d(off) - Nanoseconds td(off) - - - - 90 20 Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature t f - Nanoseconds TJ = 125ºC 170 250 VCE = 480V RG - Ohms 230 tf 400 td(off) - - - - TJ = 125ºC, VGE = 15V 80 0 125 Fig. 16. Inductive Turn-off Switching Times vs. Collector Current 190 tf = 25A TJ - Degrees Centigrade 210 700 = 50A 100 I C = 25A 25 1150 1000 I 120 1 0 = 25A, 50A, 100A 200 5 4 C t d(off) - Nanoseconds = 100A RG = 3Ω , VGE = 15V 0 100 90 1300 I 220 6 Eoff 80 240 E Eoff - MilliJoules 6 3 70 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 7 C 60 IC - Amperes Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature I 2 1 RG - Ohms 5 5 0 1 0 VCE = 480V 5 1 2 0 6 2 3 I C = 25A ---- - MilliJoules --- - MilliJoules 4 Eon RG = 3Ω , VGE = 15V on 6 Eon - Eoff Eoff E 5 on E Eoff - MilliJoules 6 C Eoff - MilliJoules I 7 IXGK72N60B3H1 IXGX72N60B3H1 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance 170 140 150 VCE = 480V 95 90 80 70 65 I 50 C = 50A I C 0 5 10 15 20 25 30 35 40 45 50 VCE = 480V 70 32 TJ = 25ºC, 125ºC 60 31 50 25ºC < TJ < 125ºC 30 29 30 28 35 20 27 20 10 = 25A 10 33 RG = 3Ω , VGE = 15V 40 50 30 td(on) - - - - t d(on) - Nanoseconds 110 = 100A - Nanoseconds 110 C d(on) I 34 tr 80 t t r - Nanoseconds 125 TJ = 125ºC, VGE = 15V 130 90 td(on) - - - - t r - Nanoseconds tr 55 20 RG - Ohms 30 40 50 60 70 80 90 26 100 IC - Amperes Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 100 35 90 34 33 I C = 100A tr 70 td(on) - - - - RG = 3Ω , VGE = 15V 60 VCE = 480V 50 32 31 30 I C = 50A 40 29 30 28 20 t d(on) - Nanoseconds t r - Nanoseconds 80 27 I 10 C = 25A 26 0 25 35 45 55 65 75 85 95 105 115 25 125 TJ - Degrees Centigrade IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: G_72N60B3(76)06-26-08-C IXGK72N60B3H1 IXGX72N60B3H1 Fig. 21 Fig. 22 Fig. 24 Fig. 25 Fig. 23 Z(th)JC - [ ºC / W ] 1.00 0.10 0.01 0.0001 0.001 0.01 0.1 1 10 s] Pulse Width [[ms] Fig. 26 Maximum transient thermal impedance junction to case (for diode) © 2008 IXYS CORPORATION, All rights reserved IXYS REF: G_72N60B3(76)06-26-08-C