Selection guide - Sep. 2014 Image Sensors Various types of image sensors covering a wide spectral response range for photometry HAMAMATSU PHOTONICS K.K. Image sensors Various types of image sensors covering a wide spectral response range for photometry H A M A M AT S U d e v e l o p s a n d p r o d u c e s a d vanced image sensors for measurement applications in spectral and energy ranges including infrared, visible, ultraviolet, vacuum ultraviolet, soft X-rays and hard X-rays. We provide a full lineup of image sensors to precisely match the wavelength of interest and application. HAMAMATSU complies with customer needs such as for different window materials, filters or fiber couplings. We also offer easyto-use driver circuits for device evaluation and sensor/driver modules for OEM applications as well as multichannel detector heads. Contents Lineup of image sensors •••••••••••••••••••• 1 Image sensor technology of Hamamatsu 5 Area image sensors 7 •••••••••••••••••••••••••••••••••••••••••••••••••••••••• •••••••••••••••••••••••••••••••••• Back-thinned type CCD area image sensors •••••••••••••••••••••••••••••••••••••••••••••••••••••••••••• Front-illuminated type CCD area image sensors ••••••••••••••••••••••••••••••••••••••••••••••••••••••••• 1 Infrared detectors 7 13 Image sensor CMOS area image sensors ••••••••••••••••••••••••••••• 15 X-ray image sensors CCD linear image sensors for industry •••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••• Linear image sensors ••••••••••••••••••••••••••• 16 CMOS linear image sensors for spectrophotometry •••••••••••••••••••••••••••••••••••••••••••••• X-ray flat panel sensors CMOS linear image sensors for industry •••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••• •••••••••••••••••••••••••••••••••••••••••••••• NMOS linear image sensors for spectrophotometry •••••••••••••••••••••••••••••••••••••••••••••• 24 17 Photodiode arrays with amplifier CCD linear image sensors for spectrophotometry •••••••••••••••••••••••••••••• 31 22 ••••• 26 •••••••••••••••••••••••••• 27 20 Distance image sensors 21 Image sensors for near infrared region 28 ••••••••••••••••••••• Related products for image sensors ••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••• Multichannel detector heads Circuits for image sensors 35 37 •••••••••••••••••••••••••• 37 ••••••••••••••••••••••••••••••• 40 •••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••• Infrared detectors 2 Lineup of image sensors Product name Feature Lineup Page Area image sensors Back-thinned type CCD area image sensors Front-illuminated type CCD area image sensors CMOS area image sensors • • • CCD area image sensors delivering high quantum efficiency • • from visible to VUV region • • • For spectrophotometry For spectrophotometry (High resolution type) For spectrophotometry (Low etaloning type) For spectrophotometry (IR-enhanced type) For spectrophotometry (Large full well type) For ICP spectrophotometry For scientific measurement Fully-depleted CCD area image sensor Low dark current and low noise CCD area image sensors • For spectrophotometry are ideal for scientific measurement instruments. • For scientific measurement These are APS type CMOS area image sensors with high • SXGA format type sensitivity in the near infrared region. • VGA format type 7 to 12 13, 14 15 Linear image sensors CMOS linear image sensors for spectrophotometry CCD linear image sensors for spectrophotometry NMOS linear image sensors for spectrophotometry These are CMOS linear image sensors suitable for spectrophotometry. 17 to 19 The back-thinned type is CCD linear image sensors developed for spectrophotometers and feature high UV sensitivity and an internal electronic shutter. • Back-thinned type The front- illuminated type offers high sensitivity in the • Front-illuminated type ultraviolet region (200 nm) nearly equal to back-thinned CCD, despite a front-illuminated CCD. 20 • Current output type (Standard type) Image sensors with high UV sensitivity and excellent output • Current output type linearity, making them ideal for precision photometry (Infrared enhanced type) • Voltage output type 21 CCD linear image sensors for industry These are CCD linear image sensors suitable for industry. CMOS linear image sensors for industry • High sensitivity type • Variable integration time type • Standard type CMOS linear image sensors incorporate a timing circuit and signal processing amplifiers integrated on the same chip, and operate from simple input pulses and a single power supply. Thus the external circuit can be simplified. • Front-illuminated type • TDI-CCD image sensor 22, 23 • • • • 24, 25 Resin-sealed type package High-speed readout type High sensitivity type Digital output type Photodiode arrays with amplifier Photodiode arrays with amplifier Sensors combining a Si photodiode array and a signal processing IC. A long, narrow image sensor can also be • Long and narrow area type configured by arranging multiple arrays in a row. 26 These distance image sensors are designed to measure the • Distance linear image sensor distance to an object by TOF method. • Distance area image sensor 27 Distance image sensors Distance image sensors Image sensors for near infrared region InGaAs linear image sensors InGaAs area image sensors 1 Image sensors • InGaAs linear image sensors for NIR spectrometry • InGaAs linear image sensors for Image sensors for near infrared region. Built-in CMOS IC DWDM monitor allows easy operation. • Thermal imaging monitor • For near infrared image detection 28 to 30 Product name Feature Lineup Page X-ray image sensors X-ray image sensors • CCD area image sensors for X-ray radiography Image sensors and photodiode arrays deliver high quality • CMOS area image sensors for X-ray X-ray images by coupling FOS (fiber optic plate coated with radiography X-ray scintillator) and phosphor sheet. • TDI-CCD area image sensors • Photodiode arrays with amplifier for non-destructive inspection 31 to 34 X-ray flat panel sensors X-ray flat panel sensors Digital X- ray image sensors developed as key devices • For radiography (rotational type) for real -time X- ray imaging applications requiring high • For radiography (biochemical imaging) sensitivity and high image quality • Low noise type 35, 36 Related products for image sensors Multichannel detector heads • For front-illuminated type CCD area image sensors • For back-thinned type CCD area image Multichannel detector heads designed as easy-to-use driver sensors (1) circuits for various types of image sensors • For NMOS linear image sensors • For InGaAs linear image sensors • For InGaAs area image sensors 37 to 39 Circuits for image sensors • Driver circuits for CCD image sensors • Driver circuits for NMOS linear image sensors (Current output type) Driver circuits and pulse generators designed for various • Pulse generator for NMOS linear image image sensors sensor driver circuits • Driver circuits for CMOS linear image sensors • Driver circuit for InGaAs linear image sensors 40 to 43 Example of detectable light level High sensitivity film (ISO 1000) InGaAs linear image sensor (G9201/G9211 series) NMOS/CMOS linear image sensor (S3901/S8377 series) Non-cooled type CCD area image sensor (Large full well type: S7033 series) Non-cooled type CCD area image sensor (S9970/S7030 series) Cooled type CCD area image sensor (S9971/S7031 series) 10-14 10-8 10-12 10-6 10-10 10-4 10-8 10-2 10-6 100 10-4 102 10-2 104 Irradiance (W/cm2) Illuminance (lx) KMPDC0106ED Image sensors 2 Image sensor Hamamatsu Photonics uses its original silicon/compound semiconductor process technology to manufacture image sensors that cover a wide energy and spectral range from 2.6 μm near infrared region to visible, UV, vacuum UV (VUV), soft X-ray, and even hard X-ray region. In addition, we also provide module products designed to work as driver circuits for various image sensors. Si process technology Compound semiconductor process technology • CCD • CMOS • In G aA s MEMS technology • Back-illuminated type • Three-dimensional mounting [fine pitch bump bonding, TSV (through silicon via)] Spectral response CCD area image sensor (without window) CMOS linear image sensor (Typ. Ta=25 ˚C) 100 Back-thinned type 90 S10121 to S10124 series 0.4 70 Photosensitivity (A/W) Quantum efficiency (%) 80 S10420-01 series 60 50 (Ta=25 ˚C) 0.5 S9970/S9971 series 40 30 20 0.3 S8377/ S8378 series 0.2 0.1 S9972/S9973 series 10 0 200 400 600 800 1000 1200 Wavelength (nm) Image sensors 400 600 800 1000 1200 Wavelength (nm) KMPDB0251ED 3 0 200 KMPDB0252EF Example of detectable energy level and spectral response range InGaAs image sensor (Long wavelength type) InGaAs linear/area image sensor Wavelength [nm] = Distance image sensor 1240 Photon energy [eV] CMOS area image sensor CMOS linear image sensor NMOS image sensor (windowless type) NMOS image sensor Back-thinned CCD Back-thinned CCD (windowless type) For X-ray imaging CCD Front-illuminated CCD (windowless type) Frontil uminated CCD X-ray flat panel sensor 1 MeV 100 keV 10 keV 1 keV 100 eV 10 eV 1 eV 0.1 eV Photon energy Wavelength 0.01 nm 0.1 nm 1 nm 10 nm 100 nm 1 μm 10 μm KMPDC0105EG Note) If using an NMOS image sensor (windowless type) for X-ray direct detection, please consult our sales office regarding usage conditions. NMOS linear image sensor InGaAs linear image sensor (Typ. Ta=25 ˚C) 0.5 S8380/S8381 series (infrared enhanced type) Photosensitivity (A/W) Photosensitivity (A/W) 0.4 0.3 0.2 (Typ.) 1.5 1.0 Td=25 °C G9206-256W Td=-10 °C Td=-20 °C G9205-256W G9201 to G9204/ G9211 to G9214/ G9494 series G9207-256W G9208-256W G11135 series 0.5 0.1 S3901/S3904 series 0 200 400 600 800 1000 1200 Wavelength (nm) 0 0.5 1.0 1.5 2.0 2.5 3.0 Wavelength (μm) KMPDB0161ED KMIRB0068EB Image sensors 4 Image sensor technology of Hamamatsu CMOS technology Hamamatsu produces CMOS image sensors that use its uniquely developed analog CMOS technology at their cores for applications mainly aimed at measuring equipment such as analytical instruments and medical equipment. With analog and digital features that meet market needs built into the same chip as the sensor, systems can be designed with high performance, multi-functionality, and low cost. · Supports photosensitive areas of various shapes (silicon/compound semiconductor, one- and two-dimensional array, large area) · Highly functional (high-speed, partial readout, built-in A/D converter, global shutter, etc.) · Customization for specific applicationss Example of high functionality based on CMOS technology Distance image sensor This image sensor can detect distance information for the target object using the TOF (time-of-flight) method. A distance measurement system can be configured by combining a pulse-modulated light source and a signal processing section. Example of distance measurement diagram Drive pulse Irradiation light Light source (LED array or LED) Evaluation circuit Ethernet PC Reflected light Distance image sensor Target (man, object) Light receiving lens KMPDC0417EA Distance image (distance information + image) example (near→middle→far: red→yellow→green) 2-port parallel output type image sensor It is possible to create highly functional CMOS image sensors for various applications by using CMOS technology. Here we introduce a 2-port parallel output type as an example. As shown in the figure, a readout circuit can be incorporated on the top and bottom of the photosensitive area, and each circuit can be operated independently. A video line for each circuit is connected to each pixel, and the data of any pixel can be read out from either circuit. It is also possible to read out a specific region at a high frame rate with port 1 and read out the remaining regions at a normal frame rate with port 2. 2-port parallel output type image sensor Vertical control 1, 2 Amp, ADC Hold 1, Horizontal control 1 Timing generator Photosensitive area (640 × 480 pixels) Hold 2, Horizontal control 2 Amp, ADC Enlarged photo of chip 5 Image sensors Read out a specific region at a high frame rate Read out the remaining regions at a normal frame rate Application example in traffic information communication Near infrared-enhanced CMOS area image sensor Our unique photosensitive area technology provides high sensitivity in the near infrared region. Imaging example of finger veins using near infrared- Spectral response (typical example) Photosensitivity [TV/(W∙s)] enhanced CMOS area image sensor (Ta=25 °C) 25 20 15 10 5 0 400 500 600 700 800 900 1000 1100 1200 Wavelength (nm) KMPDB0363EB Hybrid technology (Three-dimensional mounting) InGaAs image sensors for near infrared region employ a hybrid Schematic diagram of InGaAs area image sensor using structure in which the photodiode array of the photosensitive fine-pitch bumps area and CMOS signal processing circuit are implemented in separate chips and mounted in three dimensions using bumps. This is used when it is difficult to make the photosensitive area and signal processing circuit monolithic. Moreover, this construction is advantageous in that the shape of the photosensitive area, spectral response, and the like can easily ROIC (Si) In bump Back-illuminated InGaAs photodiode array be modified. Front end board KMIRC0036EB Back-thinned technology In general, CCDs are designed to receive light from the front side where circuit patterns are formed. This type of CCD is called the front-illuminated CCD. The light input surface of front-illuminated CCDs is formed on the front surface of the silicon substrate where a BPSG film, poly-silicon electrodes, and gate oxide film are deposited. Light entering the front surface is largely reflected away and absorbed by those components. The quantum efficiency is therefore limited to approx. 40% at the highest in the visible region, and there is no sensitivity in the ultraviolet region. Back-thinned CCDs were developed to solve such problems. Back-thinned CCDs also have a BPSG film, poly-silicon electrodes, and gate oxide film on the surface of the silicon substrate, but they receive light from the backside of the silicon substrate. Because of this structure, back-thinned CCDs deliver high quantum efficiency over a wide spectral range. Besides having high sensitivity and low noise which are the intrinsic features of CCDs, back-thinned CCDs are also sensitive to electron beams, soft X-rays, ultraviolet, visible, and near infrared region. Schematic of CCDs Back-thinned type Front-illuminated type Poly-silicon electrode BPSG film Incident light Poly-silicon electrode BPSG film Gate oxide film Gate oxide film Potential well Silicon Potential well Accumulation layer Silicon Incident light KMPDC0180EB KMPDC0179EB Image sensors 6 Area image sensors Hamamatsu CCD area image sensors have extremely low noise and can acquire image signals with high S/N. Hamamatsu CCD area image sensors use an FFT-CCD that achieves a 100% fill factor and collects light with zero loss, making them ideal for high precision measurement such as spectrophotometry. These CCD area image sensors are available in a front-illuminated type or a back-thinned type. The front-illuminated type detects light from the front side where circuit patterns are formed, while the backthinned type detects light from the rear of the Si substrate. Both types are available in various pixel sizes and formats allowing you to select the device that best meets your applications. The rear of the back-thinned type is thinned to form an ideal photosensitive surface delivering higher quantum efficiency over a wide spectral range. Back-thinned type CCD area image sensors Back-thinned type CCD area image sensors deliver high quantum efficiency (90% or more at the peak wavelength) and have great stability for UV region. Moreover these also feature low noise and are therefore ideal for low-light-level detection. For spectrophotometry Achieving high quantum efficiency (at peak 90% min.) and ideal for high accuracy spectrophotometry Number of effective pixels Frame rate*1 (frames/s) S7030-0906 512 × 58 316 S7030-0907 512 × 122 239 Type no. Pixel size [μm (H) × μm (V)] S7030-1006 1024 × 58 192 S7030-1007 1024 × 122 160 S7031-0906S 512 × 58 316 S7031-0907S 512 × 122 239 Cooling*2 Photo Dedicated driver circuit*3 (P.37) Non-cooled C7040 One-stage TE-cooled C7041 24 × 24 S7031-1006S 1024 × 58 192 S7031-1007S 1024 × 122 160 *1: Full line binning *2: Two-stage TE-cooled type (S7032-1006/-1007) is available upon request (made-to-order product). *3: Sold separately Note: Windowless type is available upon request. 7 Image sensors For spectrophotometry (High resolution type) CCD area image sensors having superior low noise performance Number of effective pixels Frame rate*4 (frames/s) S10140-1007 1024 × 122 160 S10140-1008 1024 × 250 120 S10140-1009 1024 × 506 80 Type no. Pixel size [μm (H) × μm (V)] S10140-1107 2048 × 122 96 S10140-1108 2048 × 250 80 S10140-1109 2048 × 506 60 S10141-1007S 1024 × 122 160 S10141-1008S 1024 × 250 120 S10141-1009S 1024 × 506 80 Cooling*5 Photo Dedicated driver circuit*6 (P.38) Non-cooled C10150 One-stage TE-cooled C10151 12 × 12 S10141-1107S 2048 × 122 96 S10141-1108S 2048 × 250 80 S10141-1109S 2048 × 506 60 *4: Full line binning *5: Two-stage TE-cooled type (S10142 series) is available upon request (made-to-order product). *6: Sold separately Note: Windowless type is available upon request. Image sensors 8 For spectrophotometry (Low etaloning type) Two types consisting of a high-speed type (S11071 series, S11851-1106) and low noise type (S10420-01 series, S11850-1106) are available with improved etaloning characteristics. The S11850 and S11851-1106 have a thermoelectric cooler within the package to minimize variations in the chip temperature during operation. Number of effective pixels Frame rate*1 (frames/s) S10420-1004-01 1024 × 16 221 S10420-1006-01 1024 × 64 189 Type no. Pixel size [μm (H) × μm (V)] Cooling Dedicated driver circuit*2 (P.40) Photo C11287 S10420-1104-01 2048 × 16 116 S10420-1106-01 2048 × 64 106 Non-cooled S11071-1004 1024 × 16 1777 1024 × 64 751 14 × 14 S11071-1006 C11288 S11071-1104 2048 × 16 1303 S11071-1106 2048 × 64 651 S11850-1106 106 One-stage TE-cooled 2048 × 64 S11851-1106 – 651 *1: Full line binning *2: Sold separately Note: Windowless type is available upon request. Improved etaloning characteristic Etaloning is an interference phenomenon that occurs when Etaloning characteristic (typical example) the light incident on a CCD repeatedly reflects between the front and back surfaces of the CCD while being attenuated, 100 and causes alternately high and low sensitivity. When long- -01 series and S11850/S11851-1106 back-thinned CCDs have achieved a significant improvement on etaloning by using a unique structure that is unlikely to cause interference. Relative sensitivity (%) thickness and the absorption length. The S11071/S10420 Etaloning-improved type 90 wavelength light enters a back-thinned CCD, etaloning occurs due to the relationship between the silicon substrate (Ta=25 °C) 110 80 70 Previous type 60 50 40 30 20 10 0 900 920 940 960 Wavelength (nm) 9 Image sensors 980 1000 KMPDB0284EB Area image sensors For spectrophotometry (IR-enhanced type) Enhanced near infrared sensitivity: QE=40% (λ=1000 nm) Type no. S11500 -1007 Pixel size [μm (H) × μm (V)] Number of effective pixels Frame rate*3 (frames/s) 24 × 24 1024 × 122 160 1024 × 64 189 S11510 -1006 Cooling Photo Dedicated driver circuit*4 (P.37, 40) C7040 Non-cooled 14 × 14 S11510 -1106 C11287 2048 × 64 106 *3: Full line binning *4: Sold separately Note: Windowless type is available upon request. Enhanced IR sensitivity These sensors have MEMS structures fabricated by our own Spectral response (without window) unique laser processing technology. These sensors have 100 achieved very high sensitivity in the near infrared region at 90 wavelengths longer than 800 nm. Utilizing high sensitivity characteristic in the near infrared region, these sensors should find applications in Raman spectroscopy. (Typ. Ta=25 °C) IR-enhanced type Back-thinned CCD 80 70 60 Back-thinned CCD 50 40 30 20 Front-illuminated CCD 10 0 200 400 600 800 1000 1200 Wavelength (nm) KMPDB0329EA Image sensors 10 For spectrophotometry (Large full well type) Wide dynamic range are achieved. Type no. Pixel size [μm (H) × μm (V)] S7033-0907 S7033-1007 Number of effective pixels Frame rate*1 (frames/s) 512 × 122 239 1024 × 122 160 512 × 122 239 Cooling Photo Dedicated driver circuit*2 (P.37, 38) Non-cooled C7043 One-stage TE-cooled C7044 24 × 24 S7034-0907S S7034-1007S 1024 × 122 160 *1: Full line binning *2: Sold separately Note: Windowless type is available upon request. For ICP spectrophotometry This CCD area image sensor has a back-thinned structure that enables high sensitivity in the UV to visible region an well as wide dynamic range, low dark current, and an anti-blooming function. Type no. S12071 Pixel size [μm (H) × μm (V)] Number of effective pixels Frame rate*3 (frames/s) Cooling 24 × 24 1024 × 1024 Tap A: 0.1 Tap B: 1.5 One-stage TE-cooled Photo Dedicated driver circuit – *3: Area scanning Note: Windowless type is available upon request. For scientific measurement Selectable from a line-up covering various types of high performance back-thinned CCD area image sensors such as high-speed readout type and low noise type Type no. Pixel size [μm (H) × μm (V)] Number of effective pixels Frame rate*4 (frames/s) S7170-0909 24 × 24 512 × 512 512 × 4 S9037-1002 Photo Dedicated driver circuit*6 (P.38) Non-cooled C7180 One-stage TE-cooled C7181 Non-cooled – 0.9 S7171-0909-01 S9037-0902 Cooling*5 1879 1024 × 4 945 512 × 4 1879 24 × 24 S9038-0902S – One-stage TE-cooled S9038-1002S 1024 × 4 945 *4: Area scanning excluding full line binning for S9037/S9038 series *5: Two-stage TE-cooled type for S7170-0909 and S7171-0909-01 is available upon request (made-to-order product). *6: Sold separately Note: Windowless type is available upon request. 11 Image sensors – Area image sensors Fully-depleted CCD area image sensor The S10747-0909 is a back-illuminated CCD area image sensor that delivers drastically improved near-infrared sensitivity by the widened depletion layer. Type no. Pixel size [μm (H) × μm (V)] Number of effective pixels Thickness of depletion layer (μm) Cooling S10747- 0909 24 × 24 512 × 512 200 Non-cooled Photo Dedicated driver circuit – Structure of fully-depleted back-illuminated CCD Back-thinned CCDs the silicon substrate is only a few dozen microns thick. This means that near-infrared light is more likely to pass through the substrate (see Figure 1), thus resulting in a loss of quantum efficiency in infrared region. Thickening the silicon substrate increases the quantum efficiency in the near-infrared region but also makes the resolution worse since the generated charges diffuse into the neutral region unless a bias voltage is applied (see Figure 2). Fully-depleted back-illuminated CCDs use a thick silicon substrate that has no neutral region when a bias voltage is applied and therefore deliver high quantum efficiency in the near-infrared region while maintaining a good resolution (see Figure 3). One drawback, however, is that the dark current becomes large so that these devices must usually be cooled to about -70 °C during use. Back-thinned CCD Figure 1 Figure 2 When no bias voltage is applied to thick silicon CCD surface Figure 3 CCD surface When a bias voltage is applied to thick silicon (fully-depleted back-illuminated CCD) Depletion layer CCD side Charge diffusion Neutral region Depletion layer Photosensitive surface Photosensitive surface GND Blue light Depletion layer Near-infrared light GND Blue light Near-infrared light Photosensitive surface BIAS Blue light Near-infrared light KMPDC0332EA Spectral response (without window) (Typ. Ta=25 °C) 100 90 Quantum efficiency (%) 80 70 60 Back-thinned CCD 50 40 30 S10747-0909 20 10 0 200 400 600 800 1000 1200 Wavelength (nm) KMPDB0313EA Image sensors 12 Front-illuminated type CCD area image sensors Front-illuminated type CCD area image sensors are low dark current and low noise CCDs ideal for scientific measurement instruments. For spectrophotometry CCD area image sensors specifically designed for spectrophotometry Number of effective pixels Frame rate*1 (frames/s) S9970 - 0906 512 × 60 239 S9970 -1006 1024 × 60 160 Type no. Pixel size [μm (H) × μm (V)] Cooling Photo Dedicated driver circuit*2 (P.37) Non-cooled S9970 -1007 1024 × 124 120 S9970 -1008 1024 × 252 80 S9971- 0906 512 × 60 239 S9971-1006 1024 × 60 160 C7020 C7021 One-stage TE-cooled 24 × 24 S9971-1007 1024 × 124 120 S9971-1008 1024 × 252 80 S9972-1007*3 1024 × 124 120 C7025 Non-cooled S9972-1008*3 1024 × 252 80 S9973-1007*3 1024 × 124 120 C7020 - 02 C7021- 02 One-stage TE-cooled S9973-1008*3 1024 × 252 80 *1: Full line binning *2: Sold separately *3: Infrared enhanced type Note: In case of ceramic package CCD (S9970/S9972 series), windowless, UV coat, and FOP coupling are available upon request (made-to-order product). 13 Image sensors C7025 - 02 Area image sensors For scientific measurement CCD area image sensors that deliver high accuracy measurement. Number of effective pixels of 512 × 512 and 1024 × 1024 are ideal for acquiring two-dimensional imaging. Type no. Pixel size [μm (H) × μm (V)] Number of effective pixels Frame rate*4 (frames/s) Cooling Package Photo Dedicated driver circuit Ceramic DIP S9736 - 01 24 × 24 512 × 512 3 S9736 - 03 Plate type S9737- 01 Ceramic DIP 12 × 12 1024 × 1024 1 S9737- 03 Non-cooled – Plate type S9978* 5 24 × 24 512 × 512 3 Ceramic DIP S9979 48 × 48 1536 × 128 15 Ceramic DIP *4: Area scanning *5: Infrared enhanced type Note: In case of ceramic package CCD (S9736-01/S9737-01/S9978/S9979), windowless, UV coat, and FOP coupling are available upon request (made-to-order product). Image sensors 14 CMOS area image sensors These are APS type CMOS area image sensors with high sensitivity in the near infrared region. The S11661 is an SXGA format type, and the S11662 is a VGA format type. Pixel size [μm (H) × μm (V)] Type no. Number of effective pixels Frame rate (frames/s) 1280 × 1024 8 S11661 Package 7.4 × 7.4 Dedicated driver circuit Photo Ceramic S11662 640 × 480 – 30 Features of the S11661, S11662 High sensitivity in the near infrared region Equipped with numerous functions The APS (active pixel sensor) type image sensor consisting of The serial/parallel interface allows partial readout setting, high-sensitivity amplifiers arranged for each pixel achieves high global/rolling shutter switching, integration time control, gain sensitivity in the near infrared region. and offset control, and so on. It also has a built-in 12-bit A/D converter. Block diagram (Ta=25 °C) Booster circuit 25 Photosensitivity [TV/(W∙s)] 20 15 Vertical shift register (S11661: 1064 lines, S11662: 520 lines) Spectral response (typical example) 10 ( ) Dout [11-0] 12-bit A/D converter Vsync Hsync Pclk CDS circuit (S11661: 1320 lines, S11662: 680 lines) 5 0 400 12 Photodiode array S11661: 1280 × 1024 pixels S11662: 640 × 480 pixels Horizontal shift register (S11661: 1320 lines, S11662: 680 lines) Amplifier Bias circuit Timing generator 500 600 700 800 900 Serial/parallel interface 1000 1100 1200 Wavelength (nm) KMPDB0363EB MCLK All_reset (MST) SPI_reset SPI_data SPI_clk SPI_enable KMPDC0409EA 3.3 V single power supply operation It has a built-in bias circuit and operates on a single 3.3 V power supply input. 15 Image sensors Linear image sensors CMOS linear image sensors are widely used in spectrophotometry and industrial measurement applications thanks to innovations in CMOS technology that have increased the integrated circuit density making CMOS linear image sensors easier to use and available at a reasonable cost. All essential signal-processing circuits are formed on the sensor chip. CCD linear image sensors (back-thinned type) have high UV sensitivity ideal for spectrophotometry. They also have low noise, low dark current and wide dynamic range, allowing lowlight-level detection by making the integration time longer. NMOS linear image sensors feature large charge accumulation and high output linearity making them ideal for scientific measurement instruments that require high accuracy. Output charge can be converted into voltage by an external readout circuit. Both NMOS and CMOS linear image sensors are capable of handling a larger charge than CCD image sensors and so can be used at higher light levels. Equivalent circuits CMOS linear image sensor (S9227-03) CCD linear image sensor (S11155/S11156-2048-01) VISH VIG Clock Digital shift register Timing generator Start Shift clock (2-phase) VSG VOG VRET VRD VOD VRG Video Analog shift register FDA Video Transfer gate VSTG Hold circuit VREGH VREGL All reset gate All reset drain Vdd Vss KMPDC0121EC Vss KMPDC0352EA NMOS linear image sensor (S3901 series) Start st Clock 1 Clock 2 Digital shift register End of scan Active video Active photodiode Saturation control gate Saturation control drain Dummy video Dummy diode Vss KMPDC0020EC Image sensors 16 CMOS linear image sensors for spectrophotometry These are CMOS linear image sensors suitable for spectrophotometry. High sensitivity type The S11639 is a high sensitivity CMOS linear image sensor using a photosensitive area with vertically long pixels (14 × 200 μm). Other features include high sensitivity and high resistance in the UV region. Type no. Pixel height (μm) Pixel pitch (μm) Number of pixels Line rate (frames/s) 200 14 2048 4672 S11639 Photo Dedicated driver circuit - Features of the S11639 High sensitivity in the UV to near infrared region Easy-to-operate For the photosensitive area, a buried photodiode structure is It operates on a single 5 V power supply and two types of employed to reduce the dark current and shot noise in the external clock pulses. Since the input terminal capacitance of dark state. Moreover, the photosensitive area features highly the clock pin is 5 pF, the image sensor can easily be operated sensitive vertically long pixels but with low image lag, based with a simple external circuit. The video output is positive on our original photosensitive area formation technology. In polarity. This product generates a readout timing trigger signal, addition, high sensitivity is also provided for UV light. which can be used to perform signal processing. Spectral response (typical example) Output waveform of one pixel (Ta=25 °C) 100 f(CLK)=VR=10 MHz CLK Relative sensitivity (%) 80 5 V/div. GND Trig 60 5 V/div. GND 2.5 V (saturation output voltage=2 V) Video 40 0.5 V (output offset voltage) 1 V/div. 0 200 GND 20 ns/div. 20 300 400 500 600 700 800 900 1000 Wavelength (nm) KMPDB0394EA APS (active pixel sensor) type Electronic shutter, simultaneous charge integration for all pixels This APS t ype image sensor consists of high-sensitivit y The image sensor incorporates an electronic shutter function amplifiers arranged for each pixel. It provides a high charge-to- that can be used to control the start timing and length of the - voltage conversion efficiency of 25 μV/e , which is higher than integration time in sync with an external clock pulse. The signals that of CCDs. of all pixels are transferred to a hold capacity circuit where each pixel is read out one by one. 17 Image sensors Linear image sensors Variable integration time type These current output type linear image sensors have a variable integration time function and spectralresponse characteristics with high UV sensitivity. The S10121 to S10124 series also features smoothly varying spectral response characteristics in UV region. Type no. Pixel height Pixel pitch (mm) (μm) Dedicated driver circuit*1 (P.42) Photo (frames/s) S10121-128Q 2.5 S10121-256Q Line rate Number of pixels S10121-512Q 128 1923 256 969 512 486 128 3846 256 1938 512 972 50 S10122-128Q S10122-256Q 0.5 S10122-512Q C10808 series S10123-256Q S10123-512Q 0.5 S10123-1024Q 256 1938 512 972 1024 487 256 969 512 486 1024 243 25 S10124-256Q S10124-512Q 2.5 S10124-1024Q *1: Sold separately Spectral response (typical example) Spectral response in UV region (typical example) (Ta=25 °C) 0.4 0.08 0.3 Photosensitivity (A/W) Photosensitivity (A/W) (Ta=25 °C) 0.1 0.2 0.1 S10121 to S10124 series 0.06 0.04 Convensional product S10111 to S10114 series 0.02 0 200 400 600 800 1000 1200 Wavelength (nm) 0 200 220 240 260 280 300 Wavelength (nm) KMPDB0399EA KMPDB0400EA Image sensors 18 Standard type CMOS linear image sensors with internal readout circuit Type no. Pixel height Pixel pitch (μm) (μm) S8377-128Q S8377-256Q 50 S8377-512Q Number of pixels Line rate (frames/s) 128 3846 256 1938 512 972 500 Dedicated driver circuit*1 (P.42) C9001 S8378-256Q S8378-512Q Photo 25 S8378-1024Q 256 1938 512 972 1024 487 S9226-03 125 7.8 1024 194 – 250 12.5 512 9434 – S9226-04 S9227-03 S9227-04 *1: Sold separately 19 Image sensors Linear image sensors CCD linear image sensors for spectrophotometry The back-thinned type is CCD linear image sensors developed for spectrophotometers and feature high UV sensitivity and an internal electronic shutter. The front-illuminated type offers high sensitivity in the ultraviolet region (200 nm) nearly equal to back-thinned CCD, despite a front-illuminated CCD. Back-thinned type The S11155-2048 and S11156-2048 are back-thinned CCD linear image sensors with an internalelectronic shutter for spectrometers. Type no. S11155 -2048- 01 Pixel size Pixel pitch (μm) (μm) (frames/s) Dedicated driver circuit*2 (P.40) 2254 C11165 - 01 Line rate Photo 14 × 500 14 S11156-2048-01 Number of pixels 2048 14 × 1000 *2: Sold separately Note: Windowless type is available upon request. Front-illuminated type The S11151-2048 is a front-illuminated CCD linear image sensor with high sensitivity and high resistance to UV light. Type no. S11151-2048 Pixel size Pixel pitch (μm) (μm) 14 × 200 14 Number of pixels 2048 Line rate (frames/s) 484 Photo Dedicated driver circuit*3 (P.40) C11160 *3: Sold separately Image sensors 20 NMOS linear image sensors for spectrophotometry NMOS linear image sensors are self-scanning photodiode arrays designed specifically for detectors used in multichannel spectroscopy. These image sensors feature a large photosensitive area, high UV sensitivity and little sensitivity degradation with UV exposure, wide dynamic range due to low dark current and high saturation charge, superior output linearity and uniformity, and also low power consumption. Current output type (Standard type) NMOS linear image sensors offering excellent output linearity and ideal for spectrophotometry Type no. S3901 series Pixel height Pixel pitch (μm) (μm) 2.5 S3902 series Number of pixels Cooling Photo Dedicated driver circuit*1 (P.39, 41) 128, 256, 512 C7884 series C8892 1024 – 50 50 128, 256, 512 S3903 series 25 256, 512, 1024 S3904 series 25 Non-cooled 0.5 C7884 series C8892 256, 512, 1024 2048 – 2.5 S5930 series 50 256, 512 S5931 series 25 512, 1024 One-stage TE-cooled C5964 series (Built in sensor) Current output type (Infrared enhanced type) NMOS linear image sensors having high sensitivity in near infrared region Type no. Pixel height Pixel pitch (mm) (μm) S8380 series 50 S8381 series Number of pixels Cooling Photo 128, 256, 512 25 256, 512, 1024 S8382 series 50 256, 512 S8383 series 25 512, 1024 Dedicated driver circuit*1 (P.39, 41) Non-cooled C7884 series C8892 One-stage TE-cooled C5964 series (Built-in sensor) 2.5 Voltage output type These voltage output sensors need only a simple design circuit for read-out compared to the current output type. Type no. Pixel height Pixel pitch (mm) (μm) S3921 series 2.5 S3922 series 0.5 S3923 series 0.5 S3924 series 2.5 50 Number of pixels Cooling *1: Sold separately 21 Image sensors Dedicated driver circuit 128, 256, 512 Non-cooled 25 Photo 256, 512, 1024 – Linear image sensors CCD linear image sensors for industry These are CCD linear image sensors suitable for industry. TDI-CCD image sensor TDI-CCD captures clear, bright images even under low-light-level conditions during high-speed imaging. During TDI mode, the CCD captures an image of a moving object while transferring integrated signal charges synchronously with the object movement. This operation mode drastically boosts sensitivity to high levels even when capturing fast moving objects. Our new TDI-CCD uses a back-thinned structure to achieve even higher quantum efficiency over a wide spectral range from the UV to the near IR region (200 to 1100 nm). Type no. Number of Pixel size [μm (H) × μm (V)] effective pixels Number of ports S10200 - 02- 01 1024 × 128 2 S10201- 04- 01 2048 × 128 4 12 × 12 Pixel rate (MHz/port) Line rate (kHz) 4096 × 128 8 S10202-16 - 01 4096 × 128 16 Photo Applicable*2 camera - 50 30 S10202- 08- 01 Vertical transfer C10000 -801 Bi-directional - 100 - *2: Sold separately The C10000 series cameras are products manufactured by Hamamatsu Photonics, System Division. ferred during charge readout. TDI mode synchronizes this vertical transfer timing with the movement timing of the object incident on the CCD, so that signal charges are integrated a number of times equal to the number of vertical stages of the CCD pixels. Time1 Time2 Time3 First stage · · · · · Last stage M Charge In FFT-CCD, signal charges in each line are vertically trans- Signal transfer · Object movement TDI (Time Delay Integration) mode KMPDC0139EA Image sensors 22 Spectral response (without window) Configuration (S10201-04-01) The back-thinned (back-illuminated) structure ensures higher Using multiple amplifiers (multiple output ports) permits paral- sensitivity than front-illuminated types in the UV through the lel image readout at a fast line rate. near IR region (200 to 1100 nm). OSb4 OSb3 (Typ. Ta=25 °C) 7000 OSb2 OSb1 B port side OFD OFG DGND 512 pixels TGb P3V P2V P1V TGa 128 pixels 5000 Bidirectional transfer OSa4 2000 OSa3 3000 OSa2 RG RD OD AGND OG SG P2H P1H 4000 OSa1 Photosensitivity (V/μJ · cm2) 6000 A port side 1000 KMPDC0260EA 0 200 300 400 500 600 700 800 900 1000 1100 Wavelength (nm) KMPDB0268EB Front-illuminated type These are front-illuminated type CCD linear image sensors with high-speed line rate designed for applications such as sorting machine. Type no. S12551-2048 S12379 23 Image sensors Pixel size Number of [μm (H) × μm (V)] effective pixels Number of port Pixel rate (MHz/port) Line rate (kHz) Photo Dedicated driver circuit 14 × 14 2048 × 1 1 40 19 – 8×8 2048 × 1 4 40 72 – Linear image sensors CMOS linear image sensors for industry CMOS linear image sensors incorporate a timing circuit and signal processing amplifiers integrated on the same chip, and operate from simple input pulses and a single power supply. Thus the external circuit can be simplified. Resin-sealed type package These are CMOS linear image sensors of small and surface mounted type suited for mass production. Type no. S10226 -10 Pixel height (μm) Pixel pitch (μm) Number of pixels Line rate (frames/s) 125 7.8 1024 194 Photo Dedicated driver circuit – S10227-10 250 12.5 512 9434 S11106-10 63.5 63.5 128 64935 – S11107-10 127 127 64 111111 S12443 125 7 2496 3924 – Image sensors 24 High-speed readout type These are CMOS linear image sensors with simultaneous charge integration and variable integration time function that allow highspeed readout: 10 MHz (S10453-512Q/-1024Q), 50 MHz (S11105/-01). Type no. Pixel height (mm) Pixel pitch (μm) Number of pixels Line rate (frames/s) 512 18867 S10453-512Q 0.5 Photo 25 S10453-1024Q Dedicated driver circuit – 1024 9596 512 88495 S11105 0.25 12.5 – S11105-01 High sensitivity type CMOS linear image sensors that achieve high sensitivity by adding an amplifier to each pixel. Type no. S11108 Pixel height (μm) Pixel pitch (μm) Number of pixels Line rate (frames/s) 14 14 2048 4672 Photo Dedicated driver circuit – S12706 7 7 4096 2387 Digital output type CMOS linear image sensor with internal 8-bit/10-bit AD converter Type no. S10077 25 Image sensors Pixel height (μm) Pixel pitch (μm) Number of pixels Line rate (frames/s) 50 14 1024 972 Photo Dedicated driver circuit – Photodiode arrays with amplifier Photodiode arrays with amplifier are a type of CMOS image sensor designed mainly for long area detection systems using an equal-magnification optical system. This sensor has two chips consisting of a photodiode array chip for light detection and a CMOS chip for signal processing and readout. A long, narrow image sensor can be configured by arranging multiple arrays in a row. Structure figure (S11865-64/-128) Block diagram (S11865-64/-128) CMOS signal processing chip Photodiode array chip Reset 1 CLK 2 EXTSP Vms Vdd GND 4 5 6 7 Timing generator 3 TRIG Shift register 8 EOS 9 Video Vref 10 Hold circuit Vgain 11 Charge amp array Vpd 12 Board KMPDC0186EA 1 2 3 4 5 N-1 N Photodiode array KMPDC0153EA Long and narrow area type Linear image sensors designed for industrial inspection Pixel height (mm) Pixel pitch (mm) Number of pixels Line rate (frames/s) S11865 - 64 0.8 0.8 64 14678 S11865 -128 0.6 0.4 128 7568 S11865-256 0.3 0.2 256 3844 S11865 -64-02 1.6 1.6 64 14678 S11865 -128-02 0.8 0.8 128 7568 Type no. Photo Dedicated driver circuit*1 C9118 C9118- 01 - C9118 C9118- 01 *1: Sold separately Driver circuits for photodiode arrays with amplifier Type no. Features C9118 Single power supply (+5 V) Operation with two input signals (M-CLK and M-RESET) C9118-01 Connection For single/parallel connection For serial connection Photo Suitable sensor S11865 - 64 S11865 - 64G S11865 -128 S11865 -128G S11866 - 64- 02 S11865 - 64G- 02 S11866 -128- 02 S11866 -128G- 02 Image sensors 26 Distance image sensors These distance image sensors are designed to measure the distance to an object by TOF method. When used in combination with a pulse modulated light source, these sensors output phase difference information on the timing that the light is emitted and received. The sensor output signals are arithmetically processed by an external signal processing circuit or a PC to obtain distance data. Example of distance measurement diagram Drive pulse Irradiation light Light source (LED array or LED) Evaluation circuit Ethernet Reflected light PC Distance image sensor Target (man, object) Light receiving lens KMPDC0417EA Distance linear image sensor Type no. S11961- 01CR Pixel height (μm) Pixel pitch (μm) Number of pixels Video data rate (MHz) 50 20 256 5 Pixel height (μm) Pixel pitch (μm) Number of pixels Video data rate (MHz) 40 40 64 × 64 Photo Dedicated driver circuit – Distance area image sensor Type no. S11962- 01CR 10 S11963- 01CR 27 Image sensors 30 30 160 × 120 Photo Dedicated driver circuit – Image sensors for near infrared region InGa A s image sensors are designed for a wide range of applications in the near infrared region. Built- in CMOS IC readout circuit allows easy signal processing. These image sensors use a charge amplifier mode that provides a large output signal by integrating the charge, making them ideal for low-light-level detection. Equivalent circuit (InGaAs linear image sensor) Spectral response (Typ.) 1.5 Reset Digital shift register Clock Photosensitivity (A/W) Vdd Video line Vss Vref Signal processing circuit Charge amplifier Si Wire bonding 1.0 Td=25 °C G9206-256W Td=-10 °C Td=-20 °C G9205-256W G9201 to G9204/ G9211 to G9214/ G9494 series G9207-256W G9208-256W G11135 series 0.5 Photodiode InGaAs 0 0.5 1.0 1.5 2.0 2.5 3.0 INP Wavelength (μm) KMIRC0016EB KMIRB0068EB InGaAs linear image sensors for DWDM monitor These InGaAs image sensors are developed for DWDM (Dense Wavelength Division Multiplexing) monitors in optical fiber communications. Type no. Pixel height (μm) G9201-256S Pixel pitch (μm) Number of pixels Line rate (lines/s) 50 256 1910 Cooling 0.9 to 1.67 (-10 °C) One-stage TE-cooled C8061- 01 0.9 to 1.7 (25 °C) Non-cooled – 0.9 to 1.67 (-10 °C) One-stage TE-cooled C8061- 01 0.9 to 1.7 (25 °C) Non-cooled – 0.9 to 1.67 (-10 °C) One-stage TE-cooled C8061- 01 250 G9202-512S 25 512 970* 256 Photo 2 G9203-256D 50 Dedicated driver circuit*1 (P.39) Spectral responese range (μm) 1910 G9203-256S 500 G9204-512D 25 512 970*2 G9204-512S *1: Sold separately *2: When two video lines are used for readout, the line rate is equal to that for 256 channels. Image sensors 28 InGaAs linear image sensors for NIR spectrometry InGaAs linear image sensors are ideal for near-infrared spectrophotometry. The G11135/G11620 series employ a back-illuminated structure and so enable a single video line. Type no. Pixel height (μm) G9211-256S Pixel pitch (μm) Number of pixels Line rate (lines/s) 50 256 1910 25 512 960*2 Dedicated driver circuit*1 (P.39, 43) Spectral responese range (μm) Cooling 0.9 to 1.67 (-10 °C) One-stage TE-cooled C8061- 01 Two-stage TE-cooled C8062- 01 Photo 250 G9212-512S G9213-256S 50 256 1910 G9214-512S 25 512 960*2 G9205 -256W 50 256 1910 G9205 -512W 25 512 960*2 50 256 1910 500 G9206 - 02 G9206 -256W 250 2 G9206 -512W 25 512 960* G9207-256W 50 256 1910 G9208-256W 50 256 1910 G9208-512W 25 512 960*2 G11620 -256DA 50 256 0.9 to 1.85 (-20 °C) 0.9 to 2.15 (-20 °C) 0.9 to 2.05 (-20 °C) 0.9 to 2.15 (-20 °C) 0.9 to 2.25 (-20 °C) 0.9 to 2.55 (-20 °C) 0.95 to 1.7 (25 °C) Non-cooled 0.95 to 1.67 (-10 °C) One-stage TE-cooled 17200 G11620 -256SA 500 C11513 G11620 -512DA 25 512 Non-cooled 0.95 to 1.67 (-10 °C) One-stage TE-cooled Spectral responese range (μm) Cooling 9150 G11620 -512SA Pixel height (μm) Pixel pitch (μm) Number of pixels Line rate (lines/s) G9494-256D 50 50 256 7100 G9494-512D 25 25 512 3720* Type no. 0.95 to 1.7 (25 °C) Photo Dedicated driver circuit*1 (P.39, 43) C10820 2 0.9 to 1.7 (25 °C) G10768-1024D 100 G10768-1024DB 25 G11135 -256DD 50 25 1024 39000 50 256 14000 Non-cooled 0.95 to 1.7 (25 °C) G11135 -512DE 25 25 512 8150 *1: Sold separately *2: When two video lines are used for readout, the line rate is equal to that for 256 channels. 29 Image sensors C10854 C11514 Image sensors for near infrared region InGaAs area image sensor The InGaAs area image sensors have a hybrid structure consisting of a CMOS readout circuit (ROIC: readout integrated circuit) and back-illuminated InGaAs photodiodes. Type no. Pixel height (μm) Pixel pitch (μm) G11097- 0606S 50 Number of pixels Frame rate*3 (frames/s) 64 × 64 1025 128 × 128 279 Cooling Dedicated driver circuit*4 (P.39) Photo C11512 0.95 to 1.7 (25 °C) 50 G11097- 0707S Spectral responese range (μm) G12460 - 0606S 50 50 64 × 64 1025 1.12 to 1.9 (25 °C) G12242- 0707W 20 20 128 × 128 258 0.95 to 1.7 (25 °C) One-stage TE-cooled C11512- 01 C11512 Two-stage TE-cooled C11512- 02 *3: Integration time 1 μs (min.) *4: Sold separately Block diagram (G11097-0606S/-0707S, G12460-0606S) A sequence of operation of the readout circuit is described below. Start In the readout circuit, the charge amplifier output voltage is sampled and held simultaneously at all pixels during master start pulse (MSP) which is as a frame scan signal. Then the pixels are scanned and their video signals are Shift register the integration time determined by the low period of the 64 × 64 pixels (G11097-0606S, G12460-0606S) 128 × 128 pixels (G11097-0707S) output. Pixel scanning starts from the starting point at the upper left in the right figure. The vertical shift register scans from top to bottom in the right figure while sequentially selecting each row. End For each pixel on the selected row, the following operations are per-formed: Signal processing circuit Offset compensation circuit VIDEO Transfers the sampled and held optical signal information to the signal processing circuit as a signal voltage. Shift register KMIRC0067EA Resets the amplifier in each pixel after having transferred the signal voltage and transfers the reset volt- The vertical shift register then selects the next row and repeats age to the signal processing circuit. the operations from to . After the vertical shift register ad- The signal processing circuit samples and holds the signal voltage and reset voltage . vances to the 64th row (G11097-0606S, G12460-0606S) or 128th (S11097-0707S), the MSP, which is a frame scan signal, goes The horizontal shift register scans from left to right in low. After that, when the MSP goes high and then low, the reset the right figure, and the voltage difference between switches for all pixels are simultaneously released and the next and is calculated in the offset compensation circuit. frame integration begins. This eliminates the amplifier offset voltage in each pixel. The voltage difference between and is output as the output signal in the form of serial data. Image sensors 30 X-ray image sensors Image sensors and photodiode arrays deliver high quality X-ray images by coupling FOS (fiber optics plate coated with X-ray scintillator) and phosphor sheet. X-ray image examples taken with S10810-11 taken with S8658-01 31 Image sensors taken with S7199-01 CCD area image sensors for X-ray radiography CCD image sensors with large photosensitive area and high resolution are used in X-ray radiography. Type no. Pixel size [μm (H) × μm (V)] Scintillator Number of effective pixels S8980 Frame rate*1 (frames/s) Photo Dedicated driver circuit 2 – 1 C9266 - 03 C9266 - 04 1 – 1 (max.) C9266 - 03 C9266 - 04 1 – 1500 × 1000 S10810 -11 CsI (+ FOP) S10814 20 × 20 S10811-11 1700 × 1200 Without scintillator*2 S8984- 02 *1: Area scanning *2: Coupled with FOP CCD signal processing module Signal processing circuit for X-ray CCD area image sensors. Easy to use only connecting to a PC. The C9226-03 has a BNC connector for external trigger input. Type no. Signal frequency Interface 1 MHz USB 2.0 Photo Suitable sensor C9266 - 03 S10810 -11 S10811-11 C9266 - 04 Connection example USB cable PC (Windows XP/7) CCD signal processing module CCD area image sensor KACCC0306EC Image sensors 32 CMOS area image sensors for X-ray radiography CMOS image sensors with large photosensitive area and high resolution are used in X-ray radiography. Type no. Scintillator Pixel size [μm (H) × μm (V)] Number of effective pixels Frame rate (frames/s) 1000 × 1500 0.9 Photo Dedicated driver circuit S10830 S10834 CsI (+ FOP) 20 × 20 – S10831 0.6 1300 × 1700 S10835 Photosensitive area S10830, S10834 Upper light-shielded pixels (766, 768, 770 pixels) Upper light-shielded pixels 269 pixels (756, 758, 760 pixels) 269 pixels Vertical shift register scanning direction Effective pixels (1300 × 1700 pixels) Monitor photodiode all around effective pixels Horizontal shift register scanning direction 1700 pixels 1500 pixels Effective pixels (1000 × 1500 pixels) 114 pixels 114 pixels 269 pixels 114 pixels S10831, S10835 Vertical shift register scanning direction Monitor photodiode all around effective pixels Lower light-shielded pixels (1300 × 3 pixels) Lower light-shielded pixels (1000 × 3 pixels) KMPDC0448EA Horizontal shift register scanning direction KMPDC0449EA TDI-CCD area image sensors These CCDs are long and narrow type FFT-CCD area image sensors coupling FOS. CCD chips are linearly arranged in close proximity to form a long and narrow sensor format. They are used for X-ray radiography or non-destructive inspection. Type no. Scintillator Pixel size [μm (H) × μm (V)] 48 × 48 S8658- 01*1 *1: The types coupling FOP (S7199-01F, S8658-01F) are provided. *2: Area scanning 33 Image sensors Frame rate*2 (frames/s) 1536 × 128 (2-chip buttable) S7199 - 01*1 CsI (+ FOP) Number of effective pixels Photo Dedicated driver circuit – 15 1536 × 128 (3-chip buttable) – X-ray image sensors Photodiode arrays with amplifier for non-destructive inspection Photodiode arrays with amplifier having phosphor sheet affixed on the photosensitive area are allowed for non-destructive inspection Type no. Scintillator S11865 - 64G Pixel height (mm) Pixel pitch (mm) Number of pixels Line rate (lines/s) 0.8 0.8 64 14678 Photo Dedicated driver circuit*3 C9118 C9118- 01 S11865 -128G Phosphor screen S11865 -256G S11866 - 64G- 02 0.6 0.4 128 7568 0.3 0.2 256 3844 1.6 1.6 64 14678 - C9118 C9118- 01 S11866 -128G- 02 0.8 0.8 128 7568 *3: Sold separately Driver circuits for photodiode arrays with amplifier Type no. Features Connection Photo Suitable sensor S11865 - 64 S11865 - 64G S11865 -128 S11865 -128G S11866 - 64- 02 S11866 - 64G- 02 S11866 -128- 02 S11866 -128G- 02 For single/parallel connection C9118 Single power supply (+5 V) Operation with two input signals (M-CLK and M-RESET) For serial connection C9118- 01 Connection examples Single or parallel readout example (C9118) Cascade readout example (C9118-01) Simultaneous integration/output (effective for high-speed processing) Simultaneous integration/serial output (Simplifies external processing circuit) S11865/ S11866 series S11865/ S11866 series C9118 CN2 External controller C9118-01 CN2 External controller CN3 Scan direction S11865/ S11866 series S11865/ S11866 series C9118 CN2 External controller Accessory cable C9118-01 CN2 Scan direction CN3 S11865/ S11866 series C9118 CN2 S11865/ S11866 series External controller Scan direction Scan direction KACCC0644EA C9118-01 CN2 CN3 KACCC0645EA Image sensors 34 X-ray flat panel sensors Flat panel sensors are digital X- ray image sensors newly developed as key devices for rotational radiography (C T ) and other real-time X-ray imaging applications requiring high sensitivity and high image quality. Flat panel sensors consist of a sensor board and a control board, both assembled in a thin, flat and compact configuration. For radiography (rotational type) These are flat panel sensors for high-speed operation. Type no. Scan mode Fast mode C10900D*1 Partial mode Fine mode Panoramic mode Fast mode C10901D*1 Fine mode Panoramic mode C10500D- 03*1 – Output Number of pixels [(H) × (V)] Digital (13-bit) 624 × 624 Digital (12-bit) 1248 × 1248 Digital (13-bit) 504 × 341 Digital (12-bit) 1008 × 682 Digital (14-bit) 1512 × 60 Number of effective pixels [(H) × (V)] Pixel size (μm) Frame rate (frames/s) 608 × 616 Resolution (line pairs/ mm) Photo 35 200 2.5 608 × 310 70 1216 × 1232 17 100 4.5 1216 × 72 280 496 × 336 200 60 992 × 672 2.5 30 100 4.5 992 × 72 265 1480 × 60 100 300 4.5 *1: LVDS interface. Gigabit Ethernet type is also available. For radiography (biochemical imaging) These are flat panel sensors for low energy X-ray. Type no. Output Number of pixels [(H) × (V)] C7942CK-22 Digital (12-bit) 2400 × 2400 C9730DK-10 1056 × 1056 Pixel size (μm) 50 Frame rate*2 (frames/s) Resolution (line pairs/mm) Interface 2 8 RS- 422 (differential) 4 10 Digital (14-bit) C9732DK-11 *2: Single operation 35 Image sensors USB 2.0 2400 × 2400 1 10 Photo Low noise type C9728DK-10 features low noise for application where diffraction is critical. Type no. Output Number of pixels [(H) × (V)] Pixel size (μm) Frame rate (frames/s) Resolution (line pairs/mm) Interface C9728DK-10 Digital (14-bit) 1056 × 1056 50 3 80 USB 2.0 Photo Connection example of flat panel sensors (Interface: LVDS, RS-422) (Rear view) PC/AT Video output Vsync, Hsync, Pclk OS + Acquisition software Frame grabber X-ray source Monitor Binning (bin0, bin1) IntExt ExtTrgGrb Voltage source [A.vdd, D.vdd, v (±7.5)] ExtTrgLemo MOS Image Sensor for X-Ray Flat panel sensor KACCC0269EB X-ray image examples Hornet (taken with flat panel sensor for general X-ray application) Fish (taken with radiology type flat panel sensor) Image sensors 36 Related products for image sensors Multichannel detector heads Image sensors have excellent performance characteristics, but more sophisticated electronics and signal processing are required for driving image sensors than when using single-element devices. To make it easier to use image sensors, HAMAMATSU provides multichannel detector heads designed for CCD/NMOS/ InGaAs image sensors. These multichannel detector heads operate with the dedicated controller or software for easy data acquisition and sensor evaluation and, can extract full performance from image sensors when installed in a measurement system. For front-illuminated type CCD area image sensors Type no. Output Photo Applicable sensor C7020 S9970 series C7020 - 02 S9972 series C7021 S9971- 0906/-1006/-1007 Analog Sold separately C7021- 02 S9973-1007 C7025 S9971-1008 C7025 - 02 S9973-1008 For back-thinned type CCD area image sensors (1) Type no. Output C7040 C7041 C7043 Photo Applicable sensor S7030 series, S11500 -1007 Analog S7031 series Sold separately S7033 series Note: Multichannel detector heads for two-stage TE-cooled type CCD area image sensors (Back-thinned type) are also available upon request (made-to-order product). 37 Image sensors Type no. Output Photo Applicable sensor C7044 S7034 series C7180 S7170 - 0909 C7181 Analog S7171- 0909 - 01 C10150 S10140 series C10151 S10141 series Sold separately Note: Multichannel detector heads for two-stage TE-cooled type CCD area image sensors (Back-thinned type) are also available upon request (made-to-order product). Multichannel detector head controller Supports main multichannel detector heads designed to use a CCD image sensor or NMOS/InGaAs linear image sensor Type no. C7557- 01 Interface Photo Applicable multichannel detector head C7020/- 02, C7021/- 02, C7025/- 02, C7040, C7041, C7043, C7044 C7180, C7181, C8061- 01, C8062- 01, C10150, C10151 C5964 series, C8892 USB 2.0 Accessories · USB cable · Fuse (2.5 A) · Detector head connection cables · AC cable · Software [Compatible OS: Windows 7 (32-bit only)] · Operation manual · MOS adapter Connection examples (C7557-01) Shutter* timing pulse AC cable (100 to 240 V; included with C7557-01) Trig. POWER Dedicated cable (included with C7557-01) SIGNAL I/O USB cable (included with C7557-01) TE CONTROL I/O Image sensor + Multichannel detector head C7557-01 PC [Windows 7 (32-bit)] (USB 2.0) * Shutter, etc. are not available KACCC0402EC Image sensors 38 For NMOS linear image sensors Type no. Output Photo C5964 series Applicable sensor S5930/S5931/S8382/S8383 series Built in sensor S3901 to S3904/S8380/S8381 series (excluding S3901-1024Q and S3904-2048Q) Sold separately Analog C8892 Note: Controller for multichannel detector head is available. Refer to page 38 for details. For InGaAs linear image sensors Type no. C10854 Output Photo Applicable sensor G10768-1024D G10768-1024DB CameraLink G9201/G9203/G9211/G9213-256S G9202/G9204/G9212/G9214-512S C8061- 01 Sold separately Analog C8062- 01 G9205/G9206/G9207/G9208-256W Note: Controller for multichannel detector head is available. Refer to page 38 for details. For InGaAs area image sensors Type no. Output C11512 Photo Applicable sensor G11097- 0606S CameraLink C11512- 01 39 Image sensors Sold separately G11097- 0707S Related products for image sensors Circuits for image sensors Driver circuits and pulse generators designed for image sensors are available. Driver circuits for CCD image sensors Type no. Signal frequency Interface Photo Applicable sensor C11287 250 kHz S10420 - 01 series S11510 series C11288 4 MHz S11071 series Sold separately USB 2.0 C11165 - 01 6 MHz S11155 -2048- 01 S11156 -2048- 01 C11160 1 MHz S11151-2048 Connection examples C11287 C11288, C11165-01 Laser Laser Mechanical shutter Mechanical shutter Pulse generator Pulse generator USB 2.0 USB 2.0 DC +5 V C11287 C11288, C11165-01 PC KACCC0509EB PC KACCC0526EB C11160 Laser Mechanical shutter Pulse generator USB 2.0 C11160 PC KACCC0669EA Image sensors 40 Driver circuits for NMOS linear image sensors (Current output type) Type no. Feature Photo C7884 High-precision driver circuit C7884G A dedicated pulse generator is pre-mounted on C7884. C7884- 01 Low noise driver circuit C7884G- 01 A dedicated pulse generator is pre-mounted on C7884- 01. Applicable sensor S3901 to S3904 series S8380/S8381 series (excluding S3901-1024Q and S3904-2048Q) Connection examples C7884, C7884-01 C7884G, C7884G-01 Oscilloscope Oscilloscope Pulse generator Power supply Start D. GND CLK D. GND +12 V (+15 V) A. GND -12 V (-15 V) EXT TRIG GND NMOS linear image sensor Video A. GND NMOS linear image sensor Input GND Analog input GND AD. TRIG D. GND Trigger input GND Power supply +12 V (+15 V) A. GND -12 V (-15 V) Start D. GND EXT TRIG GND Video A. GND Input GND Analog input GND AD. TRIG D. GND Trigger input GND A/D conversion A/D conversion KACCC0301EA 41 Image sensors KACCC0302EA Related products for image sensors Pulse generator for NMOS linear image sensor driver circuits Type no. Feature Photo Applicable driver circuit Master start interval: 1 μs to 50 s (1→2→5 sequense) Master clock frequency: 62.5 kHz to 32 MHz C8225 - 01 C7884 series Connection example (C8225-01) Image sensor driver circuit MSt. D. GND Power supply MCLK D. GND +5 V D. GND CLK ST 1 2 5 KACCC0305EA Driver circuits for CMOS linear image sensors Type no. Feature Photo C9001 Single power supply (+5 V) Operation with two input signals (clock and start) C10808 series With variable integration time function High-speed readout type (C10808) and low noise type (C10808- 01) are available. Applicable sensor S8377/S8378 series S10121 to S10124 series Connection example C9001 C10808 series C10808 series CMOS linear image sensor Power supply Pulse generator START-EX CLK-EX Controller EXT-INT Gain Video PLD +5V ST CLK INT INT-SEL EOS A. GND MCLK CN3 Start CLK MStart CMOS linear image sensor Vcc GND CN4 A/D conversion KACCC0561EA KACCC0294EA Image sensors 42 Driver circuit for InGaAs linear image sensors Type no. Feature Photo C10820 High gain setting suitable for low-level-light G9494-256D G9494-512D C11513 USB 2.0 interface (USB bus power) G11620 series C11514 CameraLink G11135 series Connection example (C10820) I/O connector: D-sub 15-pin type Signal name Pin no. NC 1 A.GND 9 CH. 1 VIDEO DATA 2 EXT. TRIG A.GND 10 A.GND +15 V 3 +15 V NC 11 -15 V -15 V 4 +5 V D.GND 12 D.GND +5 V 5 +5 V D.GND 13 D.GND START 6 Start D.GND 14 D.GND M-CLK 7 TRIGGER 15 Coaxial cable Oscilloscope Ex: PW18-1T made by TEXIO CORPORATION Pulse generator C8225-01 made by HAMAMATSU CLK A/D TRIG D.GND Data processing board/PC EOS 8 VIDEO GND KACCC0499EA 43 Applicable sensor Image sensors Copies of the full warranty can be obtained prior to the purchase of products by contacting your local Hamamatsu sales office. Hamamatsu makes no other warranties, and any and all implied warranties of merchantability, or fitness for a particular purpose, are hereby disclaimed. The customer is responsible for use of the product in accordance with Hamamatsu's instructions and within the operating specifications and ratings listed in this catalogue. Hamamatsu shall not be responsible for the customer's improper selection of a product for a particular application or otherwise. No warranty will apply if the products are in any way altered or modified after delivery by Hamamatsu or for any intentional misuse or abuse of the products. Proper design safety rules should be followed when incorporating these products into devices that could potentially cause bodily injury. Hamamatsu's liability on any claim for loss or damage arising out of the supplying of any products, whether based on contract, warranty, tort (including negligence and for property damage or death and bodily injury) or other grounds, shall not in any event exceed the price allocable to such products or a part thereof involved in the claim, regardless of cause or fault. In no event shall Hamamatsu be responsible to the customer or any third party for any consequential, incidental or indirect damages, including but not limited to loss of profits, revenues, sales, data, business, goodwill or use, even if the company has been advised of the possibility of such loss or damage. The limitation of liability set forth herein applies both to products and services purchased or otherwise provided hereunder. This warranty is limited to repair or replacement, at the sole option of Hamamatsu, of any product which is defective in workmanship or materials used in manufacture. All warranty claims must be made within 1 year from the date of purchase or provision of the products or services. Products that are amenable to repair shall be done so either under warranty or pursuant to a separate repair agreement. Some products cannot be repaired either because of the nature or age of the product, the unavailability of spare parts, or the extent of the damage is too great. Please contact your local Hamamatsu office for more details. The products described in this catalogue should be used by persons who are accustomed to the properties of photoelectronics devices, and have expertise in handling and operating them. They should not be used by persons who are not experienced or trained in the necessary precautions surrounding their use. The information in this catalogue is subject to change without prior notice. Information furnished by Hamamatsu is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. No patent rights are granted to any of the circuits described herein. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1, Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558, Japan Telephone: (81)53-434-3311, Fax: (81)53-434-5184 www.hamamatsu.com Main Products Si photodiodes APD Photo IC Image sensors X-ray flat panel sensors PSD Infrared detectors LED Optical communication devices Automotive devices Mini-spectrometers High energy particle/X-ray detectors Opto-semiconductor modules Hamamatsu also supplies: Photoelectric tubes Imaging tubes Light sources Imaging and processing systems Sales Offices JAPAN: HAMAMATSU PHOTONICS K.K. 325-6, Sunayama-cho, Naka-ku Hamamatsu City, 430-8587, Japan Telephone: (81)53-452-2141, Fax: (81)53-456-7889 Danish Office: Lautruphoj 1-3 DK-2750 Ballerup, Denmark Telephone: (45)70 20 93 69, Fax: (45)44 20 99 10 E-mail: [email protected] China: HAMAMATSU PHOTONICS (CHINA) Co., Ltd. B1201 Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China Telephone: (86)10-6586-6006, Fax: (86)10-6586-2866 E-mail: [email protected] Netherlands Office: Televisieweg 2 NL-1322 AC Almere, The Netherlands Telephone: (31)36-5405384, Fax: (31)36-5244948 E-mail: [email protected] U.S.A.: HAMAMATSU CORPORATION Main Office 360 Foothill Road, Bridgewater, N.J 08807-0910, U.S.A. Telephone: (1)908-231-0960, Fax: (1)908-231-1218 E-mail: [email protected] Poland Office: 02-525 Warsaw, 8 St. A. Boboli Str., Poland Telephone: (48)22-646-0016, Fax: (48)22-646-0018 E-mail: [email protected] Western Sales Office: Suite 200&Suite 110, 2875 Moorpark Ave. San Jose, CA 95128, U.S.A. Telephone: (1)408-261-2022, Fax: (1)408-261-2522 E-mail: [email protected] United Kingdom, South Africa: HAMAMATSU PHOTONICS UK LIMITED Main Office 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom Telephone: (44)1707-294888, Fax: (44)1707-325777 E-mail: [email protected] South Africa office: PO Box 1112 Buccleuch 2066 Johannesburg, South Africa Telephone/Fax: (27)11-802-5505 France, Portugal, Belgium, Switzerland, Spain: HAMAMATSU PHOTONICS FRANCE S.A.R.L. Main office: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France Telephone: (33)1 69 53 71 00 Fax: (33)1 69 53 71 10 E-mail: [email protected] Swiss Office: Dornacherplatz 7 4500 Solothurn, Switzerland Telephone: (41)32 625 60 60, Fax: (41)32 625 60 61 E-mail: [email protected] Belgian Office: Axisparc Technology , rue Andre Dumont 7-1435 Mont-Saint-Guibert, Belgium Telephone: (32)10 45 63 34 Fax: (32)10 45 63 67 E-mail: [email protected] Information in this catalogue is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. Spanish Office: C. Argenters, 4 edif 2 Parque Tecnolōgico del Vallēs 08290 Cerdanyola (Barcelona), Spain Telephone: (34)93 582 44 30 Fax: (34)93 582 44 31 E-mail: [email protected] Germany, Denmark, Netherlands, Poland: HAMAMATSU PHOTONICS DEUTSCHLAND GmbH Main office: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany Telephone: (49)8152-375-0, Fax: (49)8152-265-8 E-mail: [email protected] North Europe and CIS: HAMAMATSU PHOTONICS NORDEN AB Main Office Torshamnsgatan 35 16440 Kista, Sweden Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01 E-mail: [email protected] Russian Office: 11, Chistoprudny Boulevard, Building 1, 101000, Moscow, Russia Telephone: (7) 495 258 85 18, Fax: (7) 495 258 85 19 E-mail: [email protected] Italy: HAMAMATSU PHOTONICS ITALIA S.r.l. Main office: Strada della Moia, 1 int. 6 20020 Arese (Milano), Italy Telephone: (39)02-93581733 Fax: (39)02-93581741 E-mail: [email protected] Rome Office: Viale Cesare Pavese, 435 00144 Roma, Italy Telephone: (39)06-50513454, Fax: (39)06-50513460 E-mail: [email protected] Taiwan: HAKUTO TAIWAN LTD. 6F, No.308, Pa teh Road, Sec, 2, Taipei, Taiwan R.O.C. Telephone: (886)2-8772-8910 Fax: (886)2-8772-8918 KORYO ELECTRONICS CO., LTD. 9F-7, No.79, Hsin Tai Wu Road Sec.1, Hsi-Chih, Taipei, Taiwan, R.O.C. Telephone: (886)2-2698-1143, Fax: (886)2-2698-1147 Republic of Korea: SANGKI CORPORATION Suite 431, World Vision BLDG. 24-2 Yoido-Dong Youngdeungpo-Ku Seoul, 150-877 Telephone: (82)2-780-8515 Fax: (82)2-784-6062 Singapore: HAKUTO SINGAPORE PTE LTD. Block 2, Kaki Bukit Avenue 1, #04-01 to #04-04 Kaki Bukit Industrial Estate, Singapore 417938 Telephone: (65)67458910, Fax: (65)67418200 © 2014 Hamamatsu Photonics K.K. Quality, technology, and service are part of every product. Cat. No. KAPD0002E12 Sep. 2014 DN Printed in Japan (2,500)