MIL-PRF-38534 AND 38535 CERTIFIED FACILITY
M.S.KENNEDY CORP.
HIGH TEMPERATURE
1200V/100A
SiC HALF BRIDGE PEM
4805
FEATURES:
Operation to +175°C Case
Designed for High Temperature Applications
Half Bridge Configuration
Silicon Carbide Mosfet Provides Ultra Fast Switching
Silicon Carbide Diode Provides Near Zero Recovery
1200V Rated Voltage
100A Continuous Output Current
HI-REL Screening Available (Modified 38534)
Light Weight Domed AISiC Baseplate
Robust Mechanical Design for Hi-Rel Applications
Ultra-Low Inductance Internal Layout
Withstands 96 Hours HAST and Thermal Cycling (-55°C to +125°C)
Contact MSK for MIL-PRF-38534 (Modified) Qualification Status
DESCRIPTION:
The MSK4805 is one of a family of plastic encapsulated modules (PEM) developed specifically for use in high temperature military, aerospace, Oil/Gas and other severe environment applications. The SiC(Silicon Carbide) technology has
superior switching performance compared to Si-Based modules. The half bridge configuration and 1200V/100A rating make
it ideal for use in high current motor drive and inverter applications. The Aluminum Silicon Carbide (AlSiC) baseplate offers
superior flatness and light weight; far better than copper or copper alloys found in most high power plastic modules. The
high thermal conductivity materials used to construct the MSK4805 allow high power outputs at elevated baseplate temperatures.
EQUIVALENT SCHEMATIC
TYPICAL APPLICATIONS
Motor Drives
Inverters
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PRELIMINARY Rev. - 2/14
ABSOLUTE MAXIMUM RATING
VDS
VGS
IOUT
I OUTP
VCASE
Collector to Emitter Voltage
Gate to Emitter Voltage
Current (Continuous)
Current Pulsed (1mS)
Case Isolation Voltage
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TST
TJ
TC
1200V
+25/-10V
100A
200A
2500 V
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Storage Temperature Range
-55°C to +200°C
Junction Temperature
+200°C
Case Operating Temperature Range
MSK4805H
-55°C to +175°C
MSK4805
-40°C to +175°C
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ELECTRICAL SPECIFICATIONS
NOTES:
Guaranteed by design but not tested. Typical parameters are representative of actual device performance but are for reference only.
Industrial grade devices shall be tested to subgroup 1 unless otherwise specified.
HI-REL grade devices ("H" suffix) shall be 100% tested to subgroups 1, 2 and sample tested to subgroup 3.
Subgroup 4 testing available upon request.
Subgroup 1, 4 TC = +25°C
2, 5 TC = +175°C
3,
TC = -55°C
6 All specifications apply to both the upper and lower sections of the half bridge.
7 VGS=20V unless otherwise specified.
8 Continuous operation at or above absolute maximum ratings may adversly effect the device performance and/or life cycle.
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PRELIMINARY Rev. - 2/14
APPLICATION NOTES
THERMAL CALCULATIONS
Power dissipation and maximum allowable temperature rise involve many variables working together. Drain current,
PWM duty cycle and switching frequency all factor into power dissipation. DC losses or "ON-TIME" losses are simply
VDS x Drain Current x PWM duty cycle. For the MSK4805, VDS=TBDV max., and at 100 amps and a PWM duty cycle of
30%, DC losses equal TBD watts. Switching losses vary proportionally with switching frequency. The MSK4805 typical
switching losses at VDS=600V and IDS=100A are about TBDmJ, which is simply the sum of the turn-on switching loss
and the turn-off switching loss. Multiplying the switching frequency times the switching losses will result in a power
dissipation number for switching. The MSK4805, at 5KHz, will exhibit switching power dissipation of TBD watts. The total
losses are the sum of DC losses plus switching losses, or in this case, TBD watts total.
TBD watts x TBD°C/W thermal resistance equals TBD degrees of temperature rise between the case and the junction.
Subtracting TBD°C from the maximum junction temperature of TBD°C equals TBD°C maximum case temperature for this
example.
VDS x ID x PWM duty cycle = TBDV x 100 amps x 30% =TBD watts DC losses
Turn-on switching loss + Turn-off switching loss = Total switching losses = TBDmJ + TBDmJ = TBDmJ
Total switching loss x PWM frequency = Total switching power dissipation = TBDmJ x 5KHz = TBD watts
Total power dissipation = DC losses + switching losses =TBDW + TBDW = TBD watts
Junction temperature rise above case = Total power dissipation x thermal resistance
TBD watts x TBD°C/W = TBD°C temperature rise above case
Maximum junction temperature - junction temperature rise = maximum baseplate temperature
TBD°C - TBD°C = TBD°C
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PRELIMINARY Rev. - 2/14
TYPICAL PERFORMANCE CURVES
CHARACTERIZATION AT TJ=200°C IN PROCESS
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PRELIMINARY Rev. - 2/14
SCREENING CHART
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PRELIMINARY Rev. - 2/14
MECHANICAL SPECIFICATIONS
WEIGHT = 200 GRAMS MAX.
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PRELIMINARY Rev. - 2/14
MECHANICAL SPECIFICATIONS
MSK4805 H
ORDERING INFORMATION
SCREENING
BLANK=INDUSTRIAL
H=HI-REL (MODIFIED 38534)
GENERAL PART NUMBER
THE ABOVE EXAMPLE IS A HI-REL SCREENED MODULE.
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PRELIMINARY Rev. - 2/14
REVISION HISTORY
M.S. Kennedy Corp.
4707 Dey Road Liverpool, New York 13088
Phone (315) 701-6751
FAX (315) 701-6752
www.mskennedy.com
The information contained herein is believed to be accurate at the time of printing. MSK reserves the right to make
changes to its products or specifications without notice, however, and assumes no liability for the use of its products.
Please visit our website for the most recent revision of this datasheet.
Contact MSK for MIL-PRF-38534 (modified) qualification status.
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PRELIMINARY Rev. - 2/14