CPC3720

CPC3720
INTEGRATED CIRCUITS DIVISION
PRELIMINARY
V(BR)DSX /
V(BR)DGX
RDS(on)
(max)
IDSS (min)
Package
350VP
22
130mA
SOT-89
Features
•
•
•
•
•
•
Offers Low RDS(on) at Cold Temperatures
RDS(on) 22 max. at 25ºC
High Input Impedance
High Breakdown Voltage: 350VP
Low VGS(off) Voltage: -1.6 to -3.9V
Small Package Size SOT-89
Description
The CPC3720 is an N-channel, depletion mode, field
effect transistor (FET) that utilizes IXYS Integrated
Circuits Division’s proprietary third-generation vertical
DMOS process. The third-generation process realizes
world class, high voltage MOSFET performance
in an economical silicon gate process. Our vertical
DMOS process yields a robust device, with high input
impedance, for use in high power applications. The
CPC3720 is a highly reliable FET device that has
been used extensively in our solid state relays for
industrial and telecommunications applications.
This device excels in power applications requiring
low drain-source resistance, particularly in cold
environments such as automotive ignition modules.
The CPC3720 offers a low, 22 maximum, on-state
resistance at 25ºC.
Applications
•
•
•
•
•
•
350V N-Channel
Depletion-Mode FET
Ignition Modules
Normally-On Switches
Solid State Relays
Converters
Telecommunications
Power Supply
The CPC3720 has a minimum breakdown voltage
of 350VP , and is available in an SOT-89 package.
As with all MOS devices, the FET structure prevents
thermal runaway and thermal-induced secondary
breakdown.
Ordering Information
Part #
CPC3720CTR
Description
N-Channel Depletion Mode FET, SOT-89 Pkg.
Tape and Reel (1000/Reel)
Circuit Symbol
Package Pinout
D
D
G
G
D
S
(SOT-89)
DS-CPC3720-R00J
S
PRELIMINARY
1
INTEGRATED CIRCUITS DIVISION
CPC3720
PRELIMINARY
Absolute Maximum Ratings @ 25ºC
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Pulsed Drain Current
Total Package Dissipation
Junction Temperature
Operational Temperature
Storage Temperature
1
Ratings
350
±15
600
1.4 1
150
-55 to +125
-55 to +125
Absolute Maximum Ratings are stress ratings. Stresses in
excess of these ratings can cause permanent damage to the
device. Functional operation of the device at conditions beyond
those indicated in the operational sections of this data sheet is
not implied.
Units
VP
VP
mA
W
ºC
ºC
ºC
Mounted on FR4 board 1"x1"x0.062"
Electrical Characteristics @ 25ºC (Unless Otherwise Noted)
Parameter
Symbol
Conditions
Min
Typ
Max
Units
Drain-to-Source Breakdown Voltage
V(BR)DSX
VGS= -5V, ID=100µA
350
-
-
VP
Gate-to-Source Off Voltage
VGS(off)
VDS= 5V, ID=1mA
-1.6
-
-3.9
V
Change in VGS(off) with Temperatures
dVGS(off)/dT
VDS= 5V, ID=1A
-
-
4.5
mV/ºC
Gate Body Leakage Current
IGSS
VGS=±15V, VDS=0V
-
-
100
nA
Drain-to-Source Leakage Current
ID(off)
Saturated Drain-to-Source Current
Static Drain-to-Source ON-State Resistance
-
-
1
A
-
-
1
mA
IDSS
VGS= 0V, VDS=15V
130
-
-
mA
RDS(on)
VGS= 0V, ID=130mA
-
-
22

dRDS(on)/dT
VGS= 0V, ID=130mA
-
-
1.1
%/ºC
GFS
ID= 100mA, VDS = 10V
225
-
-
m
Input Capacitance
CISS
350
COSS
-
20
60
Reverse Transfer Capacitance
CRSS
VGS= -5V
VDS= 25V
f= 1MHz
70
Common Source Output Capacitance
10
60
Turn-On Delay Time
td(on)
Forward Transconductance
Rise Time
Turn-Off Delay Time
td(off)
Fall time
tf
pF
20
VDD= 25V
ID= 150mA
VGS= 0V to -10V
Rgen= 50
tr

Change in RDS(on) with Temperatures
VGS= -5V, VDS=350V
VGS= -5V, VDS=280V, TA=125ºC
-
10
20
-
ns
50
Source-Drain Diode Voltage Drop
VSD
VGS= -5V, ISD= 150mA
-
0.6
1.8
V
Thermal Resistance (Junction to Ambient)
RJA
-
-
90
-
ºC/W
Switching Waveform & Test Circuit
VDD
RL
0V
90%
PULSE
GENERATOR
INPUT
-10V
10%
Rgen
t on
t d(on)
VDS
OUTPUT
t off
tf
t d(off)
tr
D.U.T.
90%
90%
INPUT
OUTPUT
0V
2
10%
10%
PRELIMINARY
R00J
INTEGRATED CIRCUITS DIVISION
CPC3720
PRELIMINARY
200
180
160
140
120
100
80
60
40
20
0
VGS=0.0V
VGS(off) vs. Temperature
(VDS=10V, ID=1mA)
175
0
150
-0.5
-1.0
125
VGS=-1.5V
-40ºC
100
+25ºC
75
+125ºC
50
VGS=-2.0V
VGS(off) (V)
VGS=-1.0V
-3.5
0
-3.0
-2.0
VGS (V)
RON vs. Temperature
(VGS=0V, ID=90mA)
Power Dissipation
vs. Ambient Temperature
2
3
4
5
6
1.6
30
1.4
25
1.2
20
15
10
-2.5
-1.5
-1.0
-40
40
80
Temperature (ºC)
120
Transconductance vs. Drain Current
(VDS=10V)
300
-55ºC
250
+25ºC
1.0
0.8
0.6
200
+125ºC
150
100
0.4
5
0.2
0
0.0
-40
0
40
80
Temperature (ºC)
120
50
0
0
20
40
60
80
100 120
Ambient Temperature (ºC)
0
140
Capacitance vs. Drain Source Voltage
(VGS=-5V)
Max Rated Safe Operating Area
1
160
C (pF)
100
CISS
80
60
0.01
40
COSS
20
0.001
0.1
RON (:)
120
0.1
0
1
10
100
Drain-Source Voltage (V)
1000
CRSS
0
10
20
VDS (V)
30
40
10
20
30
40 50 60
ID (mA)
70
80
90
100
On-Resistance vs. Drain Current
(VGS=0V)
140
Drain Current (A)
0
:
Power (W)
35
-2.0
-3.0
25
VDS (V)
1
-1.5
-2.5
GGS (m )
0
RON (:)
Transfer Characteristics
(VDS=5V)
Output Characteristics
(TA=25ºC)
ID (mA)
ID (mA)
PERFORMANCE DATA*
30
27
24
21
18
15
12
9
6
3
0
0.00
0.04
0.08
0.12
ID (A)
0.16
0.2
*The Performance data shown in the graphs above is typical of device performance. For guaranteed parameters not indicated in the written specifications, please
contact our application department.
R00J
PRELIMINARY
3
INTEGRATED CIRCUITS DIVISION
CPC3720
PRELIMINARY
Manufacturing Information
Moisture Sensitivity
All plastic encapsulated semiconductor packages are susceptible to moisture ingression. IXYS Integrated
Circuits Division classified all of its plastic encapsulated devices for moisture sensitivity according to
the latest version of the joint industry standard, IPC/JEDEC J-STD-020, in force at the time of product
evaluation. We test all of our products to the maximum conditions set forth in the standard, and guarantee proper
operation of our devices when handled according to the limitations and information in that standard as well as to any
limitations set forth in the information or standards referenced below.
Failure to adhere to the warnings or limitations as established by the listed specifications could result in reduced
product performance, reduction of operable life, and/or reduction of overall reliability.
This product carries a Moisture Sensitivity Level (MSL) rating as shown below, and should be handled according
to the requirements of the latest version of the joint industry standard IPC/JEDEC J-STD-033.
Device
Moisture Sensitivity Level (MSL) Rating
CPC3720C
MSL 1
ESD Sensitivity
This product is ESD Sensitive, and should be handled according to the industry standard JESD-625.
Reflow Profile
This product has a maximum body temperature and time rating as shown below. All other guidelines of J-STD-020
must be observed.
Device
Maximum Temperature x Time
CPC3720C
260ºC for 30 seconds
Board Wash
IXYS Integrated Circuits Division recommends the use of no-clean flux formulations. However, board washing to
remove flux residue is acceptable, and the use of a short drying bake may be necessary. Chlorine-based or
Fluorine-based solvents or fluxes should not be used. Cleaning methods that employ ultrasonic energy should not be
used.
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PRELIMINARY
R00J
INTEGRATED CIRCUITS DIVISION
CPC3720
PRELIMINARY
MECHANICAL DIMENSIONS
CPC3720C
1.626 / 1.829
(0.064 / 0.072)
1.397 / 1.600
(0.055 / 0.063)
R 0.254
(R 0.010)
PCB Land Pattern
1.90
(0.075)
3.937 / 4.242
(0.155 / 0.167)
45º
2.286 / 2.591
(0.090 / 0.102)
2.45
(0.096)
1.40
(0.055)
Pin 1
0.889 / 1.194
(0.035 / 0.047)
0.356 / 0.483
(0.014 / 0.019)
0.432 / 0.559
(0.017 / 0.022)
50º
0.356 / 0.432
(0.014 / 0.017)
0.864 / 1.016
(0.034 / 0.040)
4.394 / 4.597
(0.173 / 0.181)
1.118 / 1.270
(0.044 / 0.050)
50º
5.00
(0.197)
1.90
(0.074)
0.432 / 0.508
(0.017 / 0.020)
0.60
(0.024)
TYP 3
2.845 / 2.997
(0.112 / 0.118)
1.422 / 1.575
(0.056 / 0.062)
2.921 / 3.073
(0.115 / 0.121)
Dimensions
mm MIN / mm MAX
(inches MIN / inches MAX)
CPC3720CTR Tape & Reel
177.8 Dia
(7.00 Dia)
5.50 ± 0.05
(0.217 ± 0.002)
Top Cover
Tape Thickness
0.102 Max
(0.004 Max)
2.00 ± 0.05
(0.079 ± 0.002)
4.00 ± 0.1
(0.157 ± 0.004)
W=12.00 ± 0.3
(0.472 ± 0.012)
B0=4.60 ± 0.1
(0.181 ± 0.004)
K0=1.80 ± 0.1
(0.071 ± 0.004)
Embossed
Carrier
1.75 ± 0.1
(0.069 ± 0.004)
A0=4.80 ± 0.1
(0.189 ± 0.004)
P=8.00 ± 0.1
(0.315 ± 0.004)
Embossment
Dimensions
mm
(inches)
For additional information please visit our website at: www.ixysic.com
IXYS Integrated Circuits Division makes no representations or warranties with respect to the accuracy or completeness of the contents of this publication and reserves the right to make
changes to specifications and product descriptions at any time without notice. Neither circuit patent licenses nor indemnity are expressed or implied. Except as set forth in IXYS Integrated
Circuits Division’s Standard Terms and Conditions of Sale, IXYS Integrated Circuits Division assumes no liability whatsoever, and disclaims any express or implied warranty, relating to
its products including, but not limited to, the implied warranty of merchantability, fitness for a particular purpose, or infringement of any intellectual property right.
The products described in this document are not designed, intended, authorized or warranted for use as components in systems intended for surgical implant into the body, or in other
applications intended to support or sustain life, or where malfunction of IXYS Integrated Circuits Division’s product may result in direct physical harm, injury, or death to a person or severe
property or environmental damage. IXYS Integrated Circuits Division reserves the right to discontinue or make changes to its products at any time without notice.
5
Specification: DS-CPC3720-R00J
©Copyright 2014, IXYS Integrated Circuits Division
All rights reserved. Printed in USA.
8/7/2014